JPS61142743A - Equipment for manufacturing semiconductor - Google Patents

Abstract

PURPOSE:To perform uniform chemical treatment, by dividing a rotating stage surface in a plurality of concentric regions with a semiconductor wafer being held, and independently providing heating and cooling devices, which perform the temperature control of the divided regions, to separate preset temperature value. CONSTITUTION:The stage surface of a sucking stage 3 is divided into a plurality of concentric regions 2a and 2b. Heating and cooling elements 4 are attached to the regions 2a and 2b. A temperature sensor 5 is embedded in each heating and cooling element 4, and the temperature of each divided region is detected. The temperature of each divided region of a rotary sucking head is detected by the temperature sensor 5. Its output signal is inputted to a temperature adjustor 10 through a sliding contact point 7 for the temperature signal, a fixed contact point 9 for the temperature signal and an outer terminal 11. A control output with respect to said signal is sent to the heating and cooling element 4 through the outer terminal 11, a fixed contact point 8 for power supply and a sliding contact point 6 for power supply. Thus the temperature control of the heating and cooling element 4 is performed.

Description

[Detailed Description of the Invention] [Industrial Application Field] The present invention relates to a semiconductor manufacturing apparatus that performs chemical treatment in semiconductor manufacturing, and in particular, a semiconductor manufacturing apparatus that performs chemical treatment while rotating a semiconductor wafer (hereinafter referred to as a wafer). The invention relates to semiconductor manufacturing equipment.

[Conventional technology]

Conventionally, semiconductor manufacturing equipment that drips a chemical onto a wafer and processes the wafer with chemicals while rotating the wafer.
For example, there is one shown in FIG. As shown in FIG.
It is held by suction on the suction stage 103 and rotated on this suction stage 103 . A nozzle 102 is provided above the nozzle 102, from which a chemical solution 104 is dropped onto the wafer, and the wafer is treated with the chemical while the suction stage is rotated.

[Problem that the invention seeks to solve]

However, in conventional devices like this, when the wafer rotates, the peripheral speed is faster at the outer periphery than at the center, so the cooling effect due to contact with air is greater at the outer periphery, and the outer periphery and There is a temperature difference between the wafer and the center, which results in a difference in the reaction rate of the chemical, making it impossible to uniformly process the chemical across the wafer surface.

In particular, as the diameter of wafers has increased in recent years, this tendency has become more subtle and has become an important problem.

The present invention solves the above-mentioned problems and provides an apparatus that can perform uniform chemical treatment on a wafer surface.

[Means for solving problems]

The present invention is a semiconductor manufacturing apparatus that performs chemical processing by dropping processing chemicals onto the wafer while rotating the semiconductor wafer, in which a stage surface that rotates while holding the semiconductor wafer is concentrically divided into a plurality of regions, This semiconductor manufacturing apparatus is characterized in that each divided region is independently provided with a heating and cooling device that controls the temperature of each divided region to an independent temperature set value.

〔Example〕

Next, the present invention will be explained with reference to the drawings.

FIGS. 1(a) and 1(b) are a plan view and a longitudinal sectional view showing an embodiment of the present invention. The wafer 2 to be processed is attracted to a rotating suction stage 3, and a chemical solution is dropped from a nozzle 1 above the wafer.The suction stage 3 has a stage surface formed into a plurality of concentric areas 2a.

1≧, so it is divided into regions 2a*2b, and a heating and cooling element 4 is attached to each region 2a*2b. A temperature sensor 5 is embedded in the heating/cooling element 4 to detect the temperature of each divided area. The heating/cooling element 4 and the temperature sensor 5 are connected to a fixed contact 8 for power supply and a fixed contact for temperature detection signal fixed to the device body via a sliding contact 6 for power supply and a sliding contact 7 for temperature detection signal, respectively. It is located on contact 9.

As a result, supply of control power to the heating/cooling element 4 and extraction of the detection signal from the temperature sensor 5 to the outside are possible.
This can be performed stably even when the suction stage 3 is rotating.

On the other hand, a number of temperature controllers 10 for each divided area are provided outside the apparatus so that the temperature can be set independently for each divided area, and a fixed number of temperature controllers 10 for supplying power are provided through an external terminal 11 of the apparatus main body. It is connected to the contact 8 and the fixed contact 9 for temperature detection signal.

In the embodiment, the temperature of each divided area of the rotary suction head is detected by a temperature sensor 5, and the signal is sent to the temperature control 10 via a temperature signal sliding contact 7, a temperature signal sliding contact 9, and an external terminal 11. A control output thereof is sent to the heating/cooling element 4 via the external terminal 11, the fixed power supply contact 8, and the power supply sliding contact 6, and the temperature of the heating/cooling element 4 is controlled.

〔Effect of the invention〕

As explained above, according to the present invention, when chemical processing is performed while constantly rotating the wafer on the rotary suction stage, even if the cooling effect is uneven due to air contact due to differences in in-plane circumferential speed, The in-plane temperature can be kept constant at all times, and therefore, uniform chemical processing can be performed, and the yield in wafer manufacturing can be dramatically improved. In particular, sufficient effects can be expected as wafers become larger in diameter in the future.

[Brief explanation of the drawing]

FIG. 1(a) is a plan view showing one embodiment of the present invention, FIG. 1(b)
2 is a longitudinal section, and FIG. 2 is a front view of the conventional device. DESCRIPTION OF SYMBOLS 1... Nozzle, 2... Wafer to be processed, 3... Adsorption stage, 4... Heating, cooling element, 5... Temperature sensor, 6... Sliding contact for power supply, 7... ...Sliding contact for temperature detection signal, 8...Fixed contact for power supply, 9.
...Fixed contact for temperature detection signal, 10...Temperature controller,
11... External terminal amount 1 diagram

Claims (1)

[Claims] (1) In a semiconductor manufacturing apparatus that performs chemical treatment by dropping a processing chemical onto the wafer while rotating the semiconductor wafer, a stage surface that rotates while holding the semiconductor wafer is divided concentrically into a plurality of regions, 1. A semiconductor manufacturing apparatus characterized in that each divided region is independently provided with a heating and cooling device that controls the temperature of each divided region to an independent temperature setting value.