JPS61136682A - レ−ザｃｖｄ方法 - Google Patents
レ−ザｃｖｄ方法Info
- Publication number
- JPS61136682A JPS61136682A JP25665884A JP25665884A JPS61136682A JP S61136682 A JPS61136682 A JP S61136682A JP 25665884 A JP25665884 A JP 25665884A JP 25665884 A JP25665884 A JP 25665884A JP S61136682 A JPS61136682 A JP S61136682A
- Authority
- JP
- Japan
- Prior art keywords
- gas
- substrate
- deposition
- mixing ratio
- sio2
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 12
- 239000012159 carrier gas Substances 0.000 claims abstract description 10
- 238000000354 decomposition reaction Methods 0.000 claims abstract description 9
- 238000001182 laser chemical vapour deposition Methods 0.000 claims abstract description 8
- 239000010409 thin film Substances 0.000 claims abstract description 6
- 239000007789 gas Substances 0.000 claims description 37
- -1 alkyl compound Chemical class 0.000 claims description 4
- 239000011261 inert gas Substances 0.000 claims description 2
- 238000000151 deposition Methods 0.000 abstract description 24
- 230000008021 deposition Effects 0.000 abstract description 17
- 125000000217 alkyl group Chemical group 0.000 abstract description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 8
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 239000008246 gaseous mixture Substances 0.000 abstract 3
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 abstract 1
- 239000000463 material Substances 0.000 description 10
- 239000004065 semiconductor Substances 0.000 description 5
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- 150000001875 compounds Chemical group 0.000 description 3
- 150000002739 metals Chemical class 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 239000002994 raw material Substances 0.000 description 3
- BLRPTPMANUNPDV-UHFFFAOYSA-N Silane Chemical compound [SiH4] BLRPTPMANUNPDV-UHFFFAOYSA-N 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 description 2
- 238000005979 thermal decomposition reaction Methods 0.000 description 2
- KTOQRRDVVIDEAA-UHFFFAOYSA-N 2-methylpropane Chemical compound [CH2]C(C)C KTOQRRDVVIDEAA-UHFFFAOYSA-N 0.000 description 1
- 125000000484 butyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 229910052793 cadmium Inorganic materials 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000001514 detection method Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000001678 irradiating effect Effects 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 125000001436 propyl group Chemical group [H]C([*])([H])C([H])([H])C([H])([H])[H] 0.000 description 1
- 238000007348 radical reaction Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/12—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing electromagnetic waves
- B01J19/121—Coherent waves, e.g. laser beams
Landscapes
- Physics & Mathematics (AREA)
- Chemical & Material Sciences (AREA)
- Optics & Photonics (AREA)
- Electromagnetism (AREA)
- Health & Medical Sciences (AREA)
- General Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Organic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Chemical Vapour Deposition (AREA)
- Physical Or Chemical Processes And Apparatus (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25665884A JPS61136682A (ja) | 1984-12-05 | 1984-12-05 | レ−ザｃｖｄ方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP25665884A JPS61136682A (ja) | 1984-12-05 | 1984-12-05 | レ−ザｃｖｄ方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61136682A true JPS61136682A (ja) | 1986-06-24 |
| JPH0529636B2 JPH0529636B2 (enExample) | 1993-05-06 |
Family
ID=17295668
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP25665884A Granted JPS61136682A (ja) | 1984-12-05 | 1984-12-05 | レ−ザｃｖｄ方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61136682A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5288327A (en) * | 1992-03-12 | 1994-02-22 | Bell Communications Research, Inc. | Deflected flow in chemical vapor deposition cell |
| US5378914A (en) * | 1990-05-31 | 1995-01-03 | Canon Kabushiki Kaisha | Semiconductor device with a particular source/drain and gate structure |
| CN107043920A (zh) * | 2016-02-08 | 2017-08-15 | 伊利诺斯工具制品有限公司 | 用于金属在表面上的局部沉积的方法和系统 |
-
1984
- 1984-12-05 JP JP25665884A patent/JPS61136682A/ja active Granted
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5583075A (en) * | 1990-05-13 | 1996-12-10 | Canon Kabushiki Kaisha | Method for producing a semiconductor device with a particular source/drain and gate structure |
| US5378914A (en) * | 1990-05-31 | 1995-01-03 | Canon Kabushiki Kaisha | Semiconductor device with a particular source/drain and gate structure |
| US5288327A (en) * | 1992-03-12 | 1994-02-22 | Bell Communications Research, Inc. | Deflected flow in chemical vapor deposition cell |
| CN107043920A (zh) * | 2016-02-08 | 2017-08-15 | 伊利诺斯工具制品有限公司 | 用于金属在表面上的局部沉积的方法和系统 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0529636B2 (enExample) | 1993-05-06 |
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