JPS61135146A - Semiconductor lead frame - Google Patents

Semiconductor lead frame

Info

Publication number
JPS61135146A
JPS61135146A JP25794084A JP25794084A JPS61135146A JP S61135146 A JPS61135146 A JP S61135146A JP 25794084 A JP25794084 A JP 25794084A JP 25794084 A JP25794084 A JP 25794084A JP S61135146 A JPS61135146 A JP S61135146A
Authority
JP
Japan
Prior art keywords
resin
lead frame
holes
outer leads
dam part
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP25794084A
Other languages
Japanese (ja)
Inventor
Minoru Togashi
実 冨樫
Shigeo Yoda
依田 重夫
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP25794084A priority Critical patent/JPS61135146A/en
Publication of JPS61135146A publication Critical patent/JPS61135146A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Abstract

PURPOSE:To prevent the generation of cracks of a resin with a good workability of solder dipping by arranging the holes for preventing a progress of oozing of a resin respectively in the positions which are cut in the latter process oppositely to the intervals among the outer leads being continuous to the inner leads. CONSTITUTION:A dam part 24 is arranged commonly in outer leads 23, 23... of a lead frame 22 and this dam part 24 is provided with holes 26, 26... arranged oppositely to gaps 25, 25... among the outer leads 23, 23.... the holes 26, 26... block the resin 27 which oozes out along the periphery of the respective gap 25, 25... among the outer leads 23, 23... and further progresses to the surface of the dam part 24. Accordingly, the progress of oozing of the resin 27 can be restrained effectively and as a fit becomes good in a solder dipping process and a workability is improved. Because of the existence of the holes 26, 26... in a cutting process of the dam part 24, a cut area of it becomes small and a tension becomes small thereby reducing generation of resin cracks.

Description

【発明の詳細な説明】 [発明の技術分野] 本発明は半導体装置の製造に用いられる樹脂封止型の半
導体リードフレームに関する。
DETAILED DESCRIPTION OF THE INVENTION [Technical Field of the Invention] The present invention relates to a resin-sealed semiconductor lead frame used for manufacturing semiconductor devices.

[発明の技術的背景及びその問題点] 第2図は、従来のリードフレーム11に半導体チップを
固着し、さらにボンディング配線した後に同チップをモ
ールド樹脂12により封止した状態を示すものである。
[Technical Background of the Invention and Problems Therewith] FIG. 2 shows a state in which a semiconductor chip is fixed to a conventional lead frame 11, further bonded and wired, and then the chip is sealed with a molding resin 12.

ところで、この樹脂封止工程に於いては、同図に斜線で
示すようにインナーリード部からアウターリード部13
.13・・・部にかけて樹脂14かにじみ出す。そのた
め、従来のリードフレーム11にあっては、アウターリ
ード13.13・・・部にダム部15を設けることによ
り、樹脂14のにじみの進行を抑制するようになってい
る。
By the way, in this resin sealing process, as shown by diagonal lines in the figure, the outer lead part 13 is separated from the inner lead part.
.. Resin 14 oozes out over parts 13 and 14. Therefore, in the conventional lead frame 11, dam parts 15 are provided in the outer leads 13, 13, . . . to suppress the progress of bleeding of the resin 14.

しかしながら、従来のリードフレーム11に於いては、
フレーム−厚のばらつき等により樹脂圧が変動した場合
、樹脂14がざらにダム部15を越えてその表面まで進
行する事態が生じていた。このような場合、樹脂14の
にじみがダム部15の表面にそめまま付着してしまい、
半田デイツプ工程に於いてはのりが悪く作業性が低下す
るという問題が発生する。また、後工程のダム部15の
切断工程に於いて大きな引張力が生じて樹脂クラックが
発生しやすいという問題があった。
However, in the conventional lead frame 11,
When the resin pressure fluctuates due to variations in frame thickness, etc., a situation has arisen in which the resin 14 roughly advances over the dam portion 15 and reaches its surface. In such a case, the ooze of the resin 14 may adhere to the surface of the dam part 15,
In the solder dip process, a problem arises in that the adhesive is poor and workability is reduced. Further, there is a problem in that a large tensile force is generated in the cutting process of the dam part 15 in the subsequent process, and resin cracks are likely to occur.

[発明の目的] 本発明は上記実情に鑑みてなされたもので、その目的は
、樹脂封止工程に於ける樹脂のにじみの進行を効果的に
防止し、半田ディツプの作業性が良くかつ樹脂クラック
の発生を防止することのできる半導体リードフレームを
提供することにある。
[Object of the Invention] The present invention was made in view of the above-mentioned circumstances, and its purpose is to effectively prevent the progress of resin bleeding in the resin sealing process, to improve the workability of solder dips, and to improve the resin sealing process. An object of the present invention is to provide a semiconductor lead frame that can prevent the occurrence of cracks.

[発明の概要] 本発明は、ベッド部に半導体チップが固着され、かつ同
チップの電極とインナーリード部との間の配線がなされ
た後樹脂封止がなされる半導体リードフレームに於いて
、前記インナーリードに連続するアウターリード相互間
の間隙に対向して、後工程で切断される箇所にそれぞれ
前記樹脂のにじみ進行防止用の孔を設けるものである。
[Summary of the Invention] The present invention provides a semiconductor lead frame in which a semiconductor chip is fixed to a bed portion, and resin sealing is performed after wiring between an electrode of the chip and an inner lead portion is performed. Opposing the gap between the outer leads that are continuous with the inner leads, holes for preventing the resin from bleeding are provided at locations that will be cut in a subsequent process.

[発明の実施例] 以下、図面を参照して本発明の一実施例を説明する。第
1図は、本発明に係るリードフレーム21に半導体チッ
プを固着し、さらにボンディング配線した後゛に同チッ
プをモールド樹脂22により封止した状態を示すもので
ある。
[Embodiment of the Invention] Hereinafter, an embodiment of the present invention will be described with reference to the drawings. FIG. 1 shows a state in which a semiconductor chip is fixed to a lead frame 21 according to the present invention, further bonded and wired, and then the chip is sealed with a molding resin 22.

上記リードフレーム22に於いて、そのアウターリード
23.23・・・部には共通にダム部24が設けられる
と共に、このダム部24にはアウターリード23゜23
・・・間の間隙25.25・・・に対向して孔26.2
6・・・が設けられている。
In the lead frame 22, a dam portion 24 is commonly provided at the outer leads 23, 23, .
The hole 26.2 faces the gap 25.25 between...
6... is provided.

すなわち、このリードフレーム21に於いては、アウタ
ーリード23.23・・・間の間隙25.25・・・そ
れぞれの周部を伝わってにじみ出し、ざらにダム部24
の表面まで進行してくる樹脂27を、孔26.26・・
・部に於いて堰止めるものである。
That is, in this lead frame 21, the gaps 25, 25 between the outer leads 23, 23, ooze out through the respective circumferences, and the dam part 24 roughly oozes out.
The resin 27 that has progressed to the surface of the hole 26, 26...
・This is a dam in the area.

従って、樹脂21のにじみ進行を効果的に抑制すること
ができ、半田ディプ工程に於いてものりがよくなり作業
性が向上する。また、孔26.26・・・があるため、
ダム8II24の切断工程に於いてその切断面積が小さ
くなる。このため、従来のリードフレームに比べて引張
力が小さくなり、樹脂クラックの発生を低減させること
ができる。
Therefore, the progress of bleeding of the resin 21 can be effectively suppressed, and the solder dipping process improves the adhesiveness and improves workability. Also, since there are holes 26, 26...
In the process of cutting the dam 8II24, the cutting area becomes smaller. Therefore, the tensile force is smaller than that of conventional lead frames, and the occurrence of resin cracks can be reduced.

尚、本発明はダム部を有するリードフレームであれば、
DIR,SIP、SPタイプ等各種の半導体リードフレ
ームに適用できることは勿論である。
In addition, if the present invention is a lead frame having a dam part,
Of course, it can be applied to various semiconductor lead frames such as DIR, SIP, and SP types.

[発明の効果コ 以上のように本発明によれば、樹脂封止工程に於ける樹
脂にじみの進行を効果的に防止することができるので、
半田ディツプの作業性が向上し、またダム部の切断工程
に於いても樹脂クラックの発生を防止することができる
[Effects of the Invention] As described above, according to the present invention, the progress of resin bleeding in the resin sealing process can be effectively prevented.
The workability of the solder dip is improved, and also the occurrence of resin cracks can be prevented during the cutting process of the dam part.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例に係る半導体リードフレーム
の樹脂封止後の状態を示す斜視図、第2図は従来の半導
体リードフレームの樹脂封止後の状態を示す斜視図であ
る。 21・・・リードフレーム、22・・・モールド樹脂、
23−・・アウターリード、24・・・ダム部、26・
・・孔。 出願人代理人 弁理士 鈴 江 武 ′彦第1 図 第2 図
FIG. 1 is a perspective view showing the state of a semiconductor lead frame according to an embodiment of the present invention after being sealed with resin, and FIG. 2 is a perspective view showing the state of a conventional semiconductor lead frame after being sealed with resin. 21... Lead frame, 22... Mold resin,
23-...Outer lead, 24...Dam part, 26-
...hole. Applicant's agent Patent attorney Takeshi Suzue Figure 1 Figure 2

Claims (1)

【特許請求の範囲】[Claims]  ベッド部に半導体チップが固着され、かつ同チップの
電極とインナーリード部との間の配線がなされた後樹脂
封止がなされる半導体リードフレームに於いて、前記イ
ンナーリードに連続するアウターリード相互間の間隙に
対向して、後工程で切断除去される箇所にそれぞれ前記
樹脂のにじみ進行防止用の孔を設けたことを特徴とする
半導体リードフレーム。
In a semiconductor lead frame in which a semiconductor chip is fixed to a bed part, wiring is made between the electrodes of the chip and the inner lead part, and resin sealing is performed, there is a gap between the outer leads that are continuous with the inner leads. A semiconductor lead frame characterized in that holes for preventing the resin from bleeding are provided at locations facing the gap and to be cut and removed in a subsequent process.
JP25794084A 1984-12-06 1984-12-06 Semiconductor lead frame Pending JPS61135146A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP25794084A JPS61135146A (en) 1984-12-06 1984-12-06 Semiconductor lead frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP25794084A JPS61135146A (en) 1984-12-06 1984-12-06 Semiconductor lead frame

Publications (1)

Publication Number Publication Date
JPS61135146A true JPS61135146A (en) 1986-06-23

Family

ID=17313315

Family Applications (1)

Application Number Title Priority Date Filing Date
JP25794084A Pending JPS61135146A (en) 1984-12-06 1984-12-06 Semiconductor lead frame

Country Status (1)

Country Link
JP (1) JPS61135146A (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62200749A (en) * 1986-02-28 1987-09-04 Nec Kyushu Ltd Lead frame
JPS6374657A (en) * 1986-09-19 1988-04-05 Hitachi Ltd Thermal head
JPH01123448A (en) * 1987-11-06 1989-05-16 Hitachi Ltd Manufacture of semiconductor device
US5093709A (en) * 1989-11-28 1992-03-03 Hyundai Electronics Industries Co., Ltd. Lead frame having a diagonally terminating side rail end
US5271148A (en) * 1988-11-17 1993-12-21 National Semiconductor Corporation Method of producing a leadframe

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62200749A (en) * 1986-02-28 1987-09-04 Nec Kyushu Ltd Lead frame
JPS6374657A (en) * 1986-09-19 1988-04-05 Hitachi Ltd Thermal head
JPH01123448A (en) * 1987-11-06 1989-05-16 Hitachi Ltd Manufacture of semiconductor device
US5271148A (en) * 1988-11-17 1993-12-21 National Semiconductor Corporation Method of producing a leadframe
US5093709A (en) * 1989-11-28 1992-03-03 Hyundai Electronics Industries Co., Ltd. Lead frame having a diagonally terminating side rail end

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