JPS61134680A - Measuring method of volt-ampere characteristic of photoelectromotive force semiconductor - Google Patents

Abstract

PURPOSE:To measure efficiently a volt - ampere characteristic by a small-sized device even with respect to a photoelectromotive force semiconductor whose response speed is low by bringing a xenon short arc lamp to stand-by lighting in advance, and superposing and inputting a pulsative power to said stand-by lighting. CONSTITUTION:A light of a xenon short arc lamp 1 is condensed to an integrator 3 through a condensing mirror 2, and its emitted light is projected to a solar battery S through a plane reflecting plate 5 and a collimating lens 6. In such a state, when measuring a volt - ampere characteristic, in a state that a shutter 4 has been opened, power of about 5kw is superposed and inputted to stand-by lighting in a shape of a pulse of 20-200msec time width. Also, during this time, a current and a voltage of the solar battery of, for instance, 64 points are measured, a temperature and an illuminance are corrected, a volt - ampere characteristic curve is formed, and when the pulsative lighting is ended, the shutter 4 is closed, and the measurement is ended.

Description

DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a method for measuring voltage-current characteristics of a photovoltaic semiconductor that generates electromotive force when exposed to light.

For measuring the voltage-current characteristics of semiconductors such as photovoltaic semiconductors used as solar cell modules,
Previously, our scissors semiconductor Kl! (This was done by continuously irradiating a steady light with a large Cl precipitation. That is.

IN: Semiconductor is continuously irradiated with constant light at uniform illuminance.
, the voltage type an is plotted by plotting the current value at each voltage point while slowly changing the voltage applied to the semiconductor.
was measuring gender. However, in II constant light that uses constant light, the power consumption is large because the constant light is continuously irradiated, and recently, for example, photovoltaic semiconductors are arranged in a plane and the size is 1. 5 X 1. O
i solar cells have also been put into practical use, but in order to irradiate such a large area, it is necessary to design a large constant light generator with a high light output, and at the same time the temperature of the solar cell must be Since the temperature rise cannot be avoided, it is necessary to keep the temperature constant at 4 dl, and the cost becomes extremely high.

For this reason, in order to measure this characteristic, flash discharge lamps, which can instantaneously provide a large light output, have recently been used. In other words, as shown in FIG.
Irradiated with a flash of light of msec intensity, and applied a voltage of 411 to the electrodes of the photovoltaic semiconductor FD &, BISflKflJ
For example, a voltage from 0 volts to about the electromotive force of the photovoltaic semiconductor FD is applied while changing over time.
, B! '1JIKJi Next, the change in the current value was measured using the current measuring device 12 provided, and the change in the current value was determined as shown in FIG.
Obtain the characteristic curve.

At this time, the current value at each voltage point is plotted. For example, if the number of plot points is 64, the pulse time is 1.5m5et81j', so the irradiation time per plot is 0.02 msec. That's about it.

By the way, since the conventional photovoltaic semiconductor PD is made of single-crystal silicon, the response speed of the photovoltaic power is fast, and as mentioned above, even if the irradiation time is as short as 0,000 oz msec,
The generated current responds to the applied voltage in 7 minutes, making it possible to obtain a characteristic curve with accuracy of 1. However, in recent years, there has been rapid progress in the manufacturing technology of amorphous silicon, and optical superpower semiconductors made of amorphous silicon have come into widespread use, but this has a slower response speed than single crystal silicon. . Therefore, when irradiating around 170 points, 4''''''IJII/17''''''~'°°1'40
．． 02 lmsec At 11 degrees, the current value becomes lower than the actual value as shown by the dotted line curve in FIG. 2, and an accurate characteristic curve cannot be obtained. Therefore, if the plot density is reduced, the irradiation time per plot can be lengthened, but in this case, the mutability curve becomes close to a straight line, and the accuracy decreases. Therefore, it is necessary to increase the irradiation time per 12+2 plots without reducing the number of plots, but in the case of a photovoltaic semiconductor made of amorphous silicon, the irradiation time per 1 plot is Q, 5 mse.
c or more, and the number of plots is 200 or more, it is considered to be a good shape9.In the end, the time width of the flash discharge pulse is 26 msec.
The above is required. However, performing K on large solar cells using pulsed flash discharge lamps with constant illuminance over a long period of time requires large lamps with a power transformer and optical system. #
! The equipment is also very bulky, so it's unlikely to be put into practical use! It is.

Therefore, the present invention has developed a method that can dynamically measure the voltage-current characteristics of photovoltaic semiconductors, such as photovoltaic semiconductors made of amorphous silicon, which have a slow photovoltaic response speed, using a small device. The purpose is to provide. The structure is such that a photovoltaic semiconductor whose voltage-current characteristics are to be measured, for example a photovoltaic semiconductor such as a solar cell, is irradiated with light from a xenofushi 1-door lamp, and the photovoltaic semiconductor is This is a method of measuring the voltage-current characteristics of a photovoltaic semiconductor by applying a voltage whose voltage value changes over time between the electrodes and measuring the change in current value between the electrodes. , the time span spent on standby lighting TCT by a small constant current is 20 ff1
It is a light that is lit by a large pulsed current of lJec to 20 Qrnsec, and.

When irradiating, set the shutter to ';Ij during standby lighting.
1, and the shutter is open during pulsed lighting.

Embodiments of the present invention will be explained in detail below based on the drawings.

If! Figure 3 schematically shows a light irradiation device used for unexploded IPIK.
- It is a arc discharge lamp, and actually three lamps are installed. A condensing mirror 2 with an elliptical cross section is placed behind the lamp 1, and the light from the lamp 1 is directed to an inch grater 3! i: To be done. A shutter 4 is arranged in front of this inch grater 30, and when this shutter 4 is closed, the light from the lamp 1 is traced back and is not projected to the outside. The light emitted from the inch grater 3 is reflected by the plane reflector 5 and enters the collimating lens 6, where it becomes parallel light and is projected onto the solar cell 8, which is the subject. This solar pond S is a panel with dimensions of 1.5 m x 0.5 m (a photovoltaic semiconductor module made of amorphous silicon is a planar Kf!
It was placed there.

Next, Fig. 84 shows the temporal change in the human power per one toe crank, and this lamp IK is always powered by 0.6 KW of power and is lit on standby. During this standby lighting, the shutter 4 is closed and the light does not leak outside. When measuring the voltage-current characteristics, the shutter 4 is opened, and at the same time, 5KW of power is applied for a time width of 20 msec to 200 m.
It is input in the form of a pulse of sec, superimposed on the standby lighting. The rated power of these two nogoos is 1.6KW, but since the input is in pulses, it is possible to input 5KW.
A constant illuminance can be maintained up to 00 msec s z.

Incidentally, in this example, when three lights are pulsed under the conditions described above, the radiation to the solar cell 8 is 1.
00mW//cIl, and its uniformity is ±5%;/1
00 rnsec was obtained. During this period, for example, the large falling battery current and voltage at 64 points are l in the circuit shown in diagram g1.
II is determined, @degree and illuminance correction are made and plotted,
The t-V characteristic curve is shown. When the pulsed lighting ends, the shutter 4 closes at the same time, and the measurement ends.

According to the method described above, the xenofushi 1-torque lamp is turned on in standby mode, and pulsed power is superimposed on it and input, so pulsed lighting can be performed without requiring trigger power, and moreover, the rated power is It becomes possible to input pulsed power several times that of the current value. Therefore, high output is possible with a small lamp.In the above example, 15KW lighting was achieved with three 1.6KW 2-nog lamps. Ancillary equipment such as
Kji, 11 minutes as a test device! It can be reduced to a practical scale. In addition, since the pulse duration can be made longer, the irradiation time per plot can be increased without reducing the plot value, and in the above example, it is 6.5 msec or more. becomes ays. Therefore, even if the semiconductor is made of amorphous silicon, which has a slow photovoltaic response aIIl',
A current corresponding to the applied voltage is completely generated within this irradiation time, and an accurate I-Vm line can be obtained. Therefore, according to the non-explosion dAK, it is possible to provide a method that can efficiently measure the voltage-current characteristics of a photovoltaic semiconductor having a slow photovoltaic response speed using a small device.

[Brief explanation of the drawing]

Figure 11 is a circuit diagram of the method for measuring voltage-current characteristics, Figure 2 is a light diagram of the characteristic curve, Figure 1g3 is a schematic diagram of the light irradiation device, and Figure 4
The figures each show an explanatory diagram t of input power. 1-... Xenofushi 1-To arc 2 pump 2... Focusing@
l 3--inch grater 4-shutter 6-collimating lens 10--flash discharge lamp 11-voltage source 12-current regulator 8,-
・Solar cell FD・-Photovoltaic semiconductor

Claims (1)

[Claims] A photovoltaic semiconductor whose voltage-current characteristics are to be measured, for example a photovoltaic semiconductor such as a solar cell, is irradiated with light from a xenon short arc lamp, and a voltage is applied between the electrodes of the semiconductor. A method for measuring voltage-current characteristics of a photovoltaic semiconductor by applying a voltage whose value changes over time and measuring changes in current value between the electrodes, the light being applied to a standby state with a small constant current. It is a light that is lit by a large pulsed current with a time width of 20msec to 200msec, and when it is irradiated, it is blocked by a shutter during standby lighting, and the shutter is closed during pulsed lighting. A method for measuring voltage-current characteristics of a photovoltaic semiconductor characterized by an open state.