JPS61127166A - Manufacture of image sensor - Google Patents
Manufacture of image sensorInfo
- Publication number
- JPS61127166A JPS61127166A JP59249267A JP24926784A JPS61127166A JP S61127166 A JPS61127166 A JP S61127166A JP 59249267 A JP59249267 A JP 59249267A JP 24926784 A JP24926784 A JP 24926784A JP S61127166 A JPS61127166 A JP S61127166A
- Authority
- JP
- Japan
- Prior art keywords
- film
- transparent
- electrode
- metal
- conductive film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000004519 manufacturing process Methods 0.000 title claims description 7
- 239000002184 metal Substances 0.000 claims abstract description 44
- 229910052751 metal Inorganic materials 0.000 claims abstract description 44
- 239000010408 film Substances 0.000 claims abstract description 29
- 238000005530 etching Methods 0.000 claims abstract description 21
- 238000000034 method Methods 0.000 claims abstract description 19
- 239000010409 thin film Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 8
- 239000004065 semiconductor Substances 0.000 claims description 7
- 238000010030 laminating Methods 0.000 claims description 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract description 5
- 239000011521 glass Substances 0.000 abstract description 5
- VEXZGXHMUGYJMC-UHFFFAOYSA-N Hydrochloric acid Chemical compound Cl VEXZGXHMUGYJMC-UHFFFAOYSA-N 0.000 abstract description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 abstract description 4
- 239000001257 hydrogen Substances 0.000 abstract description 4
- 229910052739 hydrogen Inorganic materials 0.000 abstract description 4
- 238000009751 slip forming Methods 0.000 abstract description 3
- 229910021578 Iron(III) chloride Inorganic materials 0.000 abstract description 2
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract description 2
- 229910000147 aluminium phosphate Inorganic materials 0.000 abstract description 2
- RBTARNINKXHZNM-UHFFFAOYSA-K iron trichloride Chemical compound Cl[Fe](Cl)Cl RBTARNINKXHZNM-UHFFFAOYSA-K 0.000 abstract description 2
- 229910017604 nitric acid Inorganic materials 0.000 abstract description 2
- 239000011259 mixed solution Substances 0.000 abstract 2
- WABPQHHGFIMREM-UHFFFAOYSA-N lead(0) Chemical compound [Pb] WABPQHHGFIMREM-UHFFFAOYSA-N 0.000 abstract 1
- 238000000926 separation method Methods 0.000 abstract 1
- 238000000206 photolithography Methods 0.000 description 5
- 238000007740 vapor deposition Methods 0.000 description 5
- 238000000059 patterning Methods 0.000 description 4
- 230000000694 effects Effects 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- 235000006693 Cassia laevigata Nutrition 0.000 description 2
- 241000522641 Senna Species 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 230000008018 melting Effects 0.000 description 2
- 238000002844 melting Methods 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 229940124513 senna glycoside Drugs 0.000 description 2
- 238000004544 sputter deposition Methods 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 1
- 238000003491 array Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000002131 composite material Substances 0.000 description 1
- 230000008020 evaporation Effects 0.000 description 1
- 238000001704 evaporation Methods 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14665—Imagers using a photoconductor layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Facsimile Heads (AREA)
- Solid State Image Pick-Up Elements (AREA)
Abstract
Description
この発明は基板上にＩＭ半導体で構成されたセンサと信
号読取り等の制御用ＩＣとを搭載するハイブリッド型の
イメージセンサの製造方法に関する。The present invention relates to a method for manufacturing a hybrid image sensor in which a sensor made of an IM semiconductor and a control IC for signal reading, etc. are mounted on a substrate.
ファクシミリセットの小形化、＠コスト化をめざして、
薄膜半導体素子を用いた密着型イメージセンサの開発が
進められている。第２図にその例を示す、センナ部２は
、フォトダイオード列３を育し、フォトダイオード列は
例えば１ｆｉあたり３個、すなわちＡ４版の原稿に対し
ては全体で１７２８個のフォトダイオードから構成され
ている。このセンサ２と原稿１との間には、原稿の像が
フォトダイオードに結ぶようにセルフォックレンズアレ
イ５を配置する。原稿１は、セルフォックレンズアレイ
の両側に配置された発光ダイオード列４の光により照射
される。このフォトダイオードが１寵あたり８個の場合
は、フォトダイオードの大きさは約１００μ■×１００
μｍ、４ｍあたり１６個の場合はフォトダイオードの大
きさは約５０μ閣×５０μ面の大きさとにする必要があ
る。
現在ファクシミリの高速化が指向される傾向にあり１、
Ｇ３又は今後０４機種が広く普及していくことが考えら
れるが、そのためにはＡ４版もしくは８４版において１
走査線あたりの読取速度が４１程度あるいはそれ以下で
なければならない、それに対応するために非晶質シリコ
ン（ａ−５１）を用いたセンサの開発が進められている
。
第３図はａ−３ｌを用いたセンサの一例を示し、（ｂｌ
は平面図（ＭｌのＸ−Ｘ’線断面図である。ｆｆｉ明絶
縁基［１０の上に基板側から入射する光信号により作動
する構造のセンサとして、透明電極２１．ａ −５１層
３１．金属電極４１からフォトダイオードが構成される
光デバイスが形成されている。透明電極２１は厚さ５０
０〜２０００人の透明導電膜からなり、ａ −３層層３
１は公知の方法で透明電極側から厚さ約１００人のｐ層
、厚さ約０．５ ｐ−のノンドープ１層、厚さ約５００
人の１層が順次成膜されたものであり、金属電極４１は
約１μ−の厚さを有する。透明電極２１は、１ｍあたり
８個あるいは１６個の割合で形成される１００ μｍ×
１００ μｍあるいは５０．ｃｐｓ ｘ５０μ−の正方
形電極２２とリード部２３とから成り、これは透明導電
膜被着後フォトリソグラフィ法によって得られる。ａ−
ＳＬＭＩ３１は透明電極群全体を覆う所定の領域に連続
的に形成され、金属電極４１は共通電極としてａ −３
１１３１の上に透明電極群を覆う形でしかも透明電極２
１とはａ−３１層３１で隔てられ、接触しないようにマ
スク蒸着によって形成される。
透明電極のリード部２２には金属リード電極４２が接続
され、この金属リード電極４２は２１．３１．４１から
成るセンサより得られるセンナ信号読取りおよび信号制
御を行うＬＳ［５０の端子へ信号を伝達するものであり
、このパターン゛は蒸着後のフォトリソグラフィ法によ
って形成される。 ＬＳＩ５０のバッド５１と金属リー
ド電極４２との接続はり一ドボンディング法により導線
６０で行われる。
第４図は、センサ部の透明電極２１と金属リード電極４
２の形成方法を示す、この透明電極２１と金属リード電
極４ｚのパターニングは微細パターンであるのでフォト
リソグラフィ法で行われろ、又、１−Ｓｔセンナの良品
率を向上させるために、フォトリソグラフィ工程はｍ
−３ｌを形成する以前に終了してお（ことが望ましい、
すなわち（８１図においてガラス基板１０の前面にＩＴ
Ｏ又はＩ Ｔ Ｏ／ Ｓｎ２重の複合膜を被着した後、
フォトリソグラフィ法により透明電極パターン２１を形
成する。透明導電膜は、蒸着法、スパッタリング法ある
いは熱ＣＶＤ法など当業者には聞知の方法で形成される
１次に（ｂｌ図に示すように、Ａ１等の約１μｍの厚さ
の金属薄膜ヰＯを蒸着法により全面に形成し、この上に
金属パターンを形成するためのフォトレジストパターン
７０を形成する０次いでりん酸と硝酸を２１の混合液で
エツチングを行うと、レジスト７０のない部分の金属薄
膜４０が溶解して、金属リード電極パターン４２が形成
できる。しかし、＾ｌの溶解の際発生する水素によって
透明導電膜が還元され、透明電極パターン２１が消滅し
てしまうことが見出された。
＾ｌのエツチング液の濃度を１０倍にうすめたり、種々
のエツチング液の検討を行うたが、ＡＩの溶解が水素ガ
スを発生して行われる状況ではこの透明電極のパターン
が消滅する状況は克服できなかった。Aiming to reduce the size and cost of facsimile sets,
The development of contact-type image sensors using thin-film semiconductor elements is progressing. An example of this is shown in FIG. 2. The sensor unit 2 grows a photodiode row 3, and the photodiode row is composed of, for example, three photodiodes per 1fi, that is, a total of 1728 photodiodes for an A4 size document. has been done. A SELFOC lens array 5 is arranged between the sensor 2 and the original 1 so that the image of the original is focused on the photodiode. The original 1 is illuminated by light from light emitting diode arrays 4 arranged on both sides of the SELFOC lens array. If there are 8 photodiodes per unit, the size of the photodiode is approximately 100μ×100
In the case of 16 pieces per μm and 4 m, the size of the photodiode needs to be about 50 μm x 50 μm. Currently, there is a trend towards higher speed facsimiles1.
It is conceivable that G3 or 04 models will become widely popular in the future, but for that to happen, it is necessary to
The reading speed per scanning line must be about 41 or less, and in order to meet this requirement, development of sensors using amorphous silicon (A-51) is progressing. FIG. 3 shows an example of a sensor using a-3l, and (bl
is a plan view (a sectional view taken along the line XX' of M1). As a sensor having a structure that is activated by a light signal incident on the transparent insulating base [10 from the substrate side, transparent electrodes 21.a to 51 layers 31. An optical device including a photodiode is formed from the metal electrode 41. The transparent electrode 21 has a thickness of 50 mm.
Consisting of 0 to 2000 transparent conductive films, a-3 layers layer 3
1 is a p-layer with a thickness of about 100 mm from the transparent electrode side, a non-doped layer of about 0.5 p-, and a non-doped layer with a thickness of about 500 mm from the transparent electrode side using a known method.
The metal electrode 41 has a thickness of about 1 .mu.m. The transparent electrodes 21 are formed at a rate of 8 or 16 pieces per 1 m and are 100 μm×
100 μm or 50. It consists of a square electrode 22 of cps x50μ- and a lead portion 23, which is obtained by photolithography after depositing a transparent conductive film. a-
The SLMI 31 is continuously formed in a predetermined area covering the entire transparent electrode group, and the metal electrode 41 is used as a common electrode.
In addition, the transparent electrode 2 is placed on top of the transparent electrode group 1131.
1 and is separated by an A-31 layer 31, and is formed by mask evaporation so as not to contact. A metal lead electrode 42 is connected to the lead portion 22 of the transparent electrode, and this metal lead electrode 42 transmits a signal to the terminal of the LS [50] which reads the senna signal obtained from the sensor consisting of 21, 31, and 41 and controls the signal. This pattern is formed by photolithography after vapor deposition. The connection between the pad 51 of the LSI 50 and the metal lead electrode 42 is made by a conductive wire 60 using a beam bonding method. Figure 4 shows the transparent electrode 21 and metal lead electrode 4 of the sensor section.
2, the patterning of the transparent electrode 21 and metal lead electrode 4z is a fine pattern, so it should be done by photolithography. Also, in order to improve the yield rate of 1-St senna, the photolithography process is m
- It is preferable to finish before forming 3l.
In other words (in Figure 81, IT is placed on the front surface of the glass substrate 10).
After depositing O or ITO/Sn double composite film,
A transparent electrode pattern 21 is formed by photolithography. The transparent conductive film is formed by a method known to those skilled in the art such as vapor deposition, sputtering, or thermal CVD. O is formed on the entire surface by a vapor deposition method, and a photoresist pattern 70 for forming a metal pattern is formed on this.O is then etched with a mixture of phosphoric acid and nitric acid in step 21, so that the parts without the resist 70 are etched. The metal thin film 40 is melted to form a metal lead electrode pattern 42. However, it has been found that the transparent conductive film is reduced by the hydrogen generated during the melting of ^l, and the transparent electrode pattern 21 disappears. We diluted the concentration of the etching solution by 10 times and investigated various etching solutions, but in a situation where AI was dissolved by generating hydrogen gas, this transparent electrode pattern disappeared. could not be overcome.
【発明の目的］
本発明は、半導体ｙＩ膜を挟んで金属電極と対向する一
列に配置された多数の透明電極より延びる透明電極リー
ド部の端部にそれぞれ接触する金属リード電極のバター
ニングのためのエツチング時に、透明電極リード部の消
滅が起こることのないイメージセンサの製造方法を提供
することを目的とする。
【発明の要点】
本発明によれば、透明絶縁基板上に透明導電膜を被着し
、その透明導電膜表面の一部に接触して金属薄膜を被着
し、次いでその上にフォトレジストパターンを形成して
エツチングにより金属リード電極パターンおよび各金属
リード電極にそれぞれ接触するリード部を備えた透明電
極パターンを形成し、そのあと半導体薄膜および対向金
Ｅｌｉ電極を積層することによって上記の目的が達成さ
れる。[Object of the Invention] The present invention provides a method for patterning metal lead electrodes that respectively contact the ends of transparent electrode lead portions extending from a large number of transparent electrodes arranged in a row facing metal electrodes with a semiconductor yI film in between. An object of the present invention is to provide a method for manufacturing an image sensor in which the transparent electrode lead portion does not disappear during etching. Summary of the Invention According to the present invention, a transparent conductive film is deposited on a transparent insulating substrate, a metal thin film is deposited in contact with a part of the surface of the transparent conductive film, and then a photoresist pattern is formed on the transparent conductive film. The above objective is achieved by forming and etching a transparent electrode pattern having a metal lead electrode pattern and a lead portion that contacts each metal lead electrode, and then laminating a semiconductor thin film and a counter gold Eli electrode. be done.
第１図は本発明の第一の実施例を示すものである。（酋
）は、フォトレジストパターン７０を形成するまでの工
程を示す、ガラス基板ｌＯの上にＩＴＯ。
５ｎ０１等の透明導電膜ｚＯを第３図に示した透明電極
群２１を形成すべき領域をカバーして形成する。これは
蒸着法、スパッタリング法、２ｃｖｏ法によって基板全
面に形成した後、エツチングにより他の部分を除去する
か、金属マスクをおいて膜形成することにより可能であ
る０次に金属マスクを用いてＡＩの蒸着により金属薄膜
４０を金属リード電極群４２をカバーする領域に形成す
る。ただしその場合、透明電極薄ＷＡ２０と金属薄膜４
０が重ねあう領域８０を有するように形成する。この重
なりあう領域８０は、第３図に示す方形電極２２の領域
まで及ばないようにしなければならない０次いでこの上
に周知の方法でフォトレジストパターン７０を形成する
。
この第１図＋ａ＋の状態でエツチングを行う、先ず金属
（＾ｌ）薄膜４０のエツチング液であるりん酸と硝酸
の等置部合液を用いてエツチングを行い、次に透明導電
膜２０のエツチング液である塩化第二鉄（ＦｅＣＩｓ）
と塩酸（ＩＣｌ ）の等置部合液を用いてエツチングを
行う、このエツチング液は、ｌＯ倍程度に水で稀釈した
方がエツチング時間が数分の適度の長さになりエツチン
グの制御が容易になる。これにょうで第１図中）に示す
ように方形電極２２とリード部２３とからなる透明電極
および端部が透明電極リード部２３に接触する金属リー
ド電極４２とが生ずる。
この場合、金属電極のエツチング後レジストのポストベ
ークと同条件、すなわち１２０ ℃の温度で再ベータを
行うと、レジストの金属薄膜および透明導電膜への密着
性とカバーリングが強化され、金属リード電極の綱りが
減少することが見出された。これは再ベークにより金属
リード電極の透明導電膜のエツチング液によろサイドエ
ツチングが制御されることによるものと考えられる。
またＦｓＣｌｓ とｌｌＣｌ の混合液のみを用いて、
＾１と透明導電膜を同時にエンチングすることもできる
。
この場合は、ＡＩの溶解の際に発生する水素が透明電極
２１の側面には作用するが、透明電極の上面はレジスト
で被覆されているので、その作用は限定される。この場
合もエツチングの間に１回以上の再ベータを行う方が明
瞭なパターンが得られた。
このあとは、第３図に示した従来例と同様にａ−３１層
および共通上部金属電極を形成することができる。
第５図は他の実施例の工程を示し、第１図の実施例との
相違は、第５図ｉａｌに示すようにガラス基ｖｉ１Ｇの
上に全面に被着された透明導電Ｍ２０の上の第１図と同
様な領域を占める金属薄膜４ｏを形成した点である。こ
の上にレジストパターン７ｏを形成することは第１図の
場合と同様である。このあとのエツチングは上述の実施
例と同様に行うことができ、第５図偽）に示すような構
造が得られる。透明導電Ｂ２０は厚さが２０００人で、
金属薄膜４ｏの厚さ１ｐＩ１１に比較して薄いので、エ
ツチング時間は第１図の場合とほとんど変わらない、こ
の実施例は透明導電膜を全面に形成するのでパターニン
グの手数が省略できる利点がある。
上記の実施例では、フォトダイオードの材料としてａ−
Ｓｔを例示したが、本発明の主旨からいって充電変換材
料としてＣｄＳその他のＦｉ膜材料を用いる場合におい
ても同様の効果があられることは言うまでもない。FIG. 1 shows a first embodiment of the invention. (Ex) shows the steps up to forming a photoresist pattern 70, in which ITO is placed on a glass substrate IO. A transparent conductive film zO such as 5n01 is formed to cover the area where the transparent electrode group 21 shown in FIG. 3 is to be formed. This is possible by forming the film on the entire surface of the substrate by vapor deposition, sputtering, or 2CVO method, and then removing other parts by etching, or by forming a film using a metal mask. A thin metal film 40 is formed in a region covering the metal lead electrode group 42 by vapor deposition. However, in that case, the transparent electrode thin WA20 and the metal thin film 4
It is formed to have a region 80 where 0's overlap. This overlapping area 80 must not extend to the area of the rectangular electrode 22 shown in FIG. 3.A photoresist pattern 70 is then formed thereon by a well-known method. Etching is performed in the state shown in +a+ in FIG. Ferric chloride (FeCIs) as a liquid
Etching is carried out using a mixture of equidistant parts of etchant and hydrochloric acid (ICl).If this etching solution is diluted with water to about 10 times the etching time, the etching time will be a moderate length of several minutes, making it easier to control the etching. become. As a result, as shown in FIG. 1), a transparent electrode consisting of a rectangular electrode 22 and a lead portion 23 and a metal lead electrode 42 whose end portion is in contact with the transparent electrode lead portion 23 are formed. In this case, if revetating is performed under the same conditions as the post-bake of the resist after etching the metal electrode, that is, at a temperature of 120°C, the adhesion and covering of the resist to the metal thin film and transparent conductive film will be strengthened, and the metal lead electrode It was found that the torsion of This is considered to be because side etching of the transparent conductive film of the metal lead electrode is controlled by the etching solution during re-baking. Also, using only a mixture of FsCls and llCl,
It is also possible to etch ^1 and the transparent conductive film at the same time. In this case, hydrogen generated during the melting of AI acts on the side surfaces of the transparent electrode 21, but since the upper surface of the transparent electrode is covered with resist, its effect is limited. In this case as well, a clearer pattern was obtained by performing re-beta one or more times during etching. After this, the a-31 layer and the common upper metal electrode can be formed in the same manner as in the conventional example shown in FIG. FIG. 5 shows the process of another embodiment, and the difference from the embodiment of FIG. The point is that a metal thin film 4o occupying the same area as in FIG. 1 is formed. Forming a resist pattern 7o thereon is the same as in the case of FIG. The subsequent etching can be carried out in the same manner as in the above embodiment, and a structure as shown in FIG. 5 is obtained. Transparent conductive B20 has a thickness of 2000 mm,
Since it is thinner than the metal thin film 4o, which has a thickness of 1 pI11, the etching time is almost the same as that shown in FIG. 1.This embodiment has the advantage that the process of patterning can be omitted because the transparent conductive film is formed on the entire surface. In the above embodiment, a-
Although St is used as an example, it goes without saying that similar effects can be obtained when using CdS or other Fi film materials as the charge conversion material in view of the gist of the present invention.
本発明は、−列に並んで形成される光検出ユニットが多
数に分離された透明電極の上に半導体薄膜、対向電極を
積層してイメージセンサを製造するために、透明電極お
よびそれに接続する金属リード電極の微細なパターニン
グが必要な場合に、透明導電膜の一部の上に重なるよう
に金属薄膜を被着し、それらの上に共通にフォトレジス
トパターンを形成した後、金属リード電極パターンおよ
び透明電極パターンを順次または同時にエツチングする
ものである。これにより金属ｍｕのエツチング時には、
少な（とも形成されるべき透明電極の上面はレジストに
よって覆われているため、金属エツチング時に発生ずろ
水素の還元作用による透明電極パターンの消滅が起こら
ず、イメージセンサの良品率を高めることが可能になる
。The present invention provides: - In order to manufacture an image sensor by laminating a semiconductor thin film and a counter electrode on a transparent electrode in which photodetection units are separated into a large number of photodetection units formed in a row, a transparent electrode and a metal connected thereto are manufactured. When fine patterning of lead electrodes is required, a metal thin film is deposited so as to overlap a part of the transparent conductive film, and a common photoresist pattern is formed on them, and then the metal lead electrode pattern and The transparent electrode patterns are etched sequentially or simultaneously. As a result, when etching metal mu,
Since the upper surface of the transparent electrode to be formed is covered with resist, the transparent electrode pattern does not disappear due to the reduction action of hydrogen that is generated during metal etching, making it possible to increase the yield rate of image sensors. Become.
第１図は本発明の一実施例の工程の一部を順次示す断面
図、第２図は本発明により製造されるイメージセンナの
ファクシミリにおけろ使用状態を示す斜視図、第３図は
イメージセンサの構造の一部を示し、＋ａ＋が平面図、
中）が＋ａ＋のＸ−χ”線断面図、第４図は従来の製造
工程の一部を順次示す断面図、第５図は本発明の別の実
施例の工程の一部を順次示す断面図である。
ｌＯニガラス基板、２０：透明厚電膜、２１：ｉ！！明
電極電極３：透明電極リード部、３１： ａ −５ｌｌ
！ｌ、 ４０：金属薄膜、４１：金属電極、４２：金属
リード電極、７０ニレジスト、８０：透明電極と金属リ
ード電極の重なり部。
第１図
第２図
第３図
第４図
第５図FIG. 1 is a sectional view sequentially showing a part of the process of an embodiment of the present invention, FIG. 2 is a perspective view showing how the image sensor manufactured by the present invention is used in a facsimile, and FIG. 3 is an image A part of the structure of the sensor is shown, +a+ is a plan view,
(middle) is a cross-sectional view taken along the X-χ” line of +a+, FIG. 4 is a cross-sectional view sequentially showing a part of the conventional manufacturing process, and FIG. 5 is a cross-sectional view sequentially showing a part of the process of another embodiment of the present invention. It is a figure. 1O Ni glass substrate, 20: transparent thick electrical film, 21: i!! Bright electrode 3: transparent electrode lead part, 31: a-5ll
! 1, 40: Metal thin film, 41: Metal electrode, 42: Metal lead electrode, 70 resist, 80: Overlapping portion of transparent electrode and metal lead electrode. Figure 1 Figure 2 Figure 3 Figure 4 Figure 5
Claims (1)
された多数の透明電極より延びる透明電極リード部の端
部にそれぞれ金属リード電極が接触するイメージセンサ
の製造方法であって、透明絶縁基板上に透明導電膜を被
着し、該透明導電膜の表面の一部に接触して金属薄膜を
被着し、次いでその上にフォトレジストパターンを形成
してエッチングにより金属リード電極パターンおよび該
金属リード電極にそれぞれ接触するリード部を備えた透
明電極パターンを形成し、そのあと半導体薄膜および対
向金属電極を積層することを特徴とするイメージセンサ
の製造方法。1) A method for manufacturing an image sensor in which a metal lead electrode contacts each end of a transparent electrode lead portion extending from a large number of transparent electrodes arranged in a row facing metal electrodes with a semiconductor thin film in between, the method comprising: a transparent insulating substrate; A transparent conductive film is deposited thereon, a metal thin film is deposited in contact with a part of the surface of the transparent conductive film, a photoresist pattern is formed thereon, and a metal lead electrode pattern and the metal are formed by etching. 1. A method of manufacturing an image sensor, comprising forming a transparent electrode pattern having lead portions in contact with respective lead electrodes, and then laminating a semiconductor thin film and a counter metal electrode.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59249267A JPS61127166A (en) | 1984-11-26 | 1984-11-26 | Manufacture of image sensor |
| US06/801,932 US4665008A (en) | 1984-11-26 | 1985-11-26 | Method for fabricating thin-film image sensing devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59249267A JPS61127166A (en) | 1984-11-26 | 1984-11-26 | Manufacture of image sensor |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61127166A true JPS61127166A (en) | 1986-06-14 |
Family
ID=17190420
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59249267A Pending JPS61127166A (en) | 1984-11-26 | 1984-11-26 | Manufacture of image sensor |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61127166A (en) |
-
1984
- 1984-11-26 JP JP59249267A patent/JPS61127166A/en active Pending
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