JPS61125207A - Temperature compensation surface acoustic wave oscillator - Google Patents

Temperature compensation surface acoustic wave oscillator

Info

Publication number
JPS61125207A
JPS61125207A JP24673384A JP24673384A JPS61125207A JP S61125207 A JPS61125207 A JP S61125207A JP 24673384 A JP24673384 A JP 24673384A JP 24673384 A JP24673384 A JP 24673384A JP S61125207 A JPS61125207 A JP S61125207A
Authority
JP
Japan
Prior art keywords
temperature
acoustic wave
surface acoustic
resistor
voltage
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP24673384A
Other languages
Japanese (ja)
Inventor
Tetsuo Kudo
工藤 鉄男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp filed Critical NEC Corp
Priority to JP24673384A priority Critical patent/JPS61125207A/en
Publication of JPS61125207A publication Critical patent/JPS61125207A/en
Pending legal-status Critical Current

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  • Oscillators With Electromechanical Resonators (AREA)
  • Inductance-Capacitance Distribution Constants And Capacitance-Resistance Oscillators (AREA)

Abstract

PURPOSE:To attain miniaturization, mass-production and ease of adjustment with simple constitution by connecting a circuit of series connection of the 1st and 2nd transistors (TRs) in parallel with the 1st and 2nd capacitor to form a capacitance of a surface acoustic wave element and supplying a base voltage changed in response to temperature to the base of the 1st and 2nd TRs. CONSTITUTION:A base voltage is fed to a base of a TR26 via a resistor 19 and a thermister 28. A connecting npoint between the resistor 19 and the thermistor 28 is connected to common via a resistor 18. A base voltage is fed to a TR27 via a resistor 20 and the thermister 28. Further, a voltage fed to the thermistor 28 is kept to a constant voltage by a constant voltage diode 15 and the AC component is rejected by a capacitor 13. Since the termister 28 is a heat sensing element whose resistance is changed depending on ambient temperature, the base voltage or the TRs26, 27 is changed by temperature. Thus, the resistance value of the TRs26, 27 is changed by temperature.

Description

【発明の詳細な説明】 発明の属する技術分野 本発明は、温度補償型弾性表面波発振器に関し、特にそ
の温1λ特性補償回路の改良に関する。
DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a temperature compensated surface acoustic wave oscillator, and particularly to an improvement of its temperature 1λ characteristic compensation circuit.

従来技術 従来、この種の温度補償型弾性表面波発振器は第5図に
示すように、抵抗器1〜4.サーミスタ8.9等からな
る温度依存電圧発生部の出力電圧を可変6縫ダイオード
14に印加することによって、周囲温度に対応して容醗
値を変化させるようにし、該容着値を弾性表面波発振器
のコンデンサIOに並列接続した構成である0弾性表面
波発振器は、弾性表面波素子16.コンデンサ10〜1
2.抵抗器5,6.トランジスタ17等から構成されて
いて、これ等の定数によって定まる周波数の発振をする
。なお、該発振器には、抵抗器7.定電圧ダイオード1
5.コンデンサ13等によって定電圧が供S合されてい
る。
Prior Art Conventionally, this type of temperature-compensated surface acoustic wave oscillator has resistors 1 to 4, as shown in FIG. By applying the output voltage of a temperature-dependent voltage generating section consisting of a thermistor 8, 9, etc. to the variable six-stitch diode 14, the capacitance value is changed in accordance with the ambient temperature, and the capacitance value is changed by surface acoustic wave A surface acoustic wave oscillator having a configuration connected in parallel to the capacitor IO of the oscillator has a surface acoustic wave element 16. Capacitor 10-1
2. Resistors 5, 6. It is composed of transistors 17, etc., and oscillates at a frequency determined by these constants. Note that the oscillator includes a resistor 7. Constant voltage diode 1
5. A constant voltage is supplied by a capacitor 13 and the like.

補償回路がない場合の弾性表面波発振器の1度周波数特
性は、一般に第6図に示すような2次曲線に近い特性で
あり、ある温度T1で発振周波数が最も高くなり、それ
より低い温度T、でも高い温度T2でも発振周波数が低
ドする傾向がある。
The one-degree frequency characteristic of a surface acoustic wave oscillator without a compensation circuit is generally a characteristic close to a quadratic curve as shown in Figure 6, with the oscillation frequency reaching its highest at a certain temperature T1, and at a lower temperature T1. However, even at a high temperature T2, the oscillation frequency tends to decrease.

一方弾性表面波共振fの負荷容#CLと発信周波数の間
には反比例の関係があり、負荷容量が減少すれば発信周
波数がI:+jIする。周波数変化率Δf/fは、一般
的に下記(1)式によって表わされる。
On the other hand, there is an inversely proportional relationship between the load capacity #CL of the surface acoustic wave resonance f and the oscillation frequency, and as the load capacity decreases, the oscillation frequency increases I:+jI. The frequency change rate Δf/f is generally expressed by the following equation (1).

Δf/f=1/2y(1+cL/co)   −−(+
)ただし、γ:弾性表血波共振子の定数 Co:Iil性表面波共振子の並列容緩CL:負荷容醗 (共振子とアース間の6縦) 従って、第5図の回路で、可変6槍ダイオード14への
印加電圧が温度T1で最低となり、それより低い温度で
も高い温度でも印加電圧が適当に上肩するようにすれば
、発信周波数の温度特性を補償することが可能である。
Δf/f=1/2y(1+cL/co) --(+
) However, γ: Constant of the elastic surface wave resonator Co: Parallel capacitance of the Iil surface wave resonator CL: Load capacity (6 vertical lines between the resonator and ground) Therefore, in the circuit shown in Figure 5, the variable The temperature characteristics of the oscillation frequency can be compensated by making the voltage applied to the six-lance diode 14 lowest at temperature T1, and appropriately increasing the applied voltage at lower and higher temperatures.

しかし、第5図に示すような従来の弾性表面波発振器は
、サーミスタ8.9並びに抵抗器1,2.3等の素子値
を決定するために複雑な計算が必要とされ、設計および
製作に多大の労力と時間が費やされる。また、広い温度
範囲に亘って良好な周波数特性を得るためにはサーミス
タ等の感熱抵抗体を多数使用する必要があり、また可変
容量タイオード14には高度の直線性が娶求される。こ
のため、従来の発振器は高価なものとなる欠点がある。
However, in the conventional surface acoustic wave oscillator as shown in Fig. 5, complicated calculations are required to determine the values of elements such as the thermistor 8.9 and resistors 1 and 2.3. It takes a lot of effort and time. Furthermore, in order to obtain good frequency characteristics over a wide temperature range, it is necessary to use a large number of heat-sensitive resistors such as thermistors, and the variable capacitance diode 14 is required to have a high degree of linearity. For this reason, conventional oscillators have the disadvantage of being expensive.

発明の目的 本発明の目的は、上述の従来の欠点を解決し、構成が簡
単で小形化および敏産化に適し、調整が容易で安価な温
度補償型弾性表面波発振器を提供することにある。
OBJECTS OF THE INVENTION An object of the present invention is to solve the above-mentioned conventional drawbacks, and to provide a temperature-compensated surface acoustic wave oscillator that is simple in construction, suitable for miniaturization and rapid production, easy to adjust, and inexpensive. .

発明の構成 本発明の温度補償型弾性表面波発振器は、弾性表面波素
子と増幅部とを含む弾性表面波発振器の前記弾性表面波
素子と大地間に負荷容量を接続した弾性表面波発振器に
おいて、前記負荷容量は、第1および$2のコンデンサ
と該IR1および第2のコンデンサにそれぞれ直列接続
されたIllおよび第2のトランジスタとで形成し、感
熱抵抗体を通して前記第1および第2のトランジスタの
ベースに温度依存のベース電圧を供給することを特徴と
する。
Structure of the Invention The temperature-compensated surface acoustic wave oscillator of the present invention is a surface acoustic wave oscillator including a surface acoustic wave element and an amplifying section, in which a load capacitor is connected between the surface acoustic wave element and the ground. The load capacitance is formed by first and $2 capacitors and Ill and second transistors connected in series to the IR1 and second capacitors, respectively, and the first and second transistors are connected through a heat-sensitive resistor. It is characterized by supplying a temperature-dependent base voltage to the base.

発明の実施例 次に、本発明について1図面を参照して詳細に説明する
Embodiments of the Invention Next, the present invention will be described in detail with reference to one drawing.

第1図は、本発明の一実施例を示す回路図である。すな
わち、コンデンサII 、 12 、抵抗器5〜7、ト
ランジスタ17等によって構成される増幅部と弾性表面
波素子16とで構成される弾性表面波発振器の弾性表面
波素子16と大地間にコンデンサ23とトランジスタ2
6の直列回路と、コンデンサ24とトランジスタ27の
直列回路とを接続して負荷容量とする。トランジスタ2
8 、27のコレクタにはそれぞれ抵抗器21 、22
を通してコレクタ電圧が供給される。また、トランジス
タ26のベースには抵抗器19およびサーミスタ28を
介してベース電圧が供給され、抵抗器18とサーミスタ
28との接続点は、抵抗器18を通して接地されている
。トランジスタ27には抵抗器20および前記サーミス
タ28を通してベース電圧を供給する。なお、サーミス
タ28に供給される電圧は、定電圧ダイオード15によ
って一定電圧に保たれ、コンデンサ13によって交流成
分が除去されている。
FIG. 1 is a circuit diagram showing one embodiment of the present invention. That is, a capacitor 23 is connected between the surface acoustic wave oscillator 16 of the surface acoustic wave oscillator, which is composed of an amplifying section composed of capacitors II, 12, resistors 5 to 7, transistors 17, etc., and the surface acoustic wave element 16, and the ground. transistor 2
A series circuit of 6 and a series circuit of capacitor 24 and transistor 27 are connected to form a load capacitance. transistor 2
Resistors 21 and 22 are connected to the collectors of 8 and 27, respectively.
Collector voltage is supplied through. Further, a base voltage is supplied to the base of the transistor 26 via a resistor 19 and a thermistor 28, and a connection point between the resistor 18 and the thermistor 28 is grounded through the resistor 18. A base voltage is supplied to the transistor 27 through the resistor 20 and the thermistor 28. Note that the voltage supplied to the thermistor 28 is maintained at a constant voltage by the constant voltage diode 15, and the alternating current component is removed by the capacitor 13.

サーミスタ28は周囲温度によって抵抗値が変化する感
熱素子であるから、トランジスタ2Bおよび27のベー
ス電圧は、温度によって変化する。従って、トランジス
タ26および夕27の抵抗値は温度によって変化する。
Since the thermistor 28 is a heat-sensitive element whose resistance value changes depending on the ambient temperature, the base voltages of the transistors 2B and 27 change depending on the temperature. Therefore, the resistance values of transistor 26 and transistor 27 change depending on the temperature.

ただし、トランジスタ28は温度T1以上ではコレクタ
eエミッタ間インピーダンスが飽和した低抵抗値になっ
てオン状態となり、トランジスタ27は温度T1以下で
オン状態となるようにサーミスタ28.抵抗器18およ
び抵抗器Ill。
However, at temperatures above T1, the transistor 28 has a low resistance value with a saturated collector-to-emitter impedance and turns on, and when the transistor 27 turns on at temperatures below T1, the thermistor 28. Resistor 18 and resistor Ill.

20の抵抗値を設定しておくものとする。従って、温度
T、〜T、の間では、トランジスタ27がオン状態で、
トランジスタ26は、温度の上昇に従って抵抗値を減少
し、温度T1ではトランジスタ26゜トランジスタ27
ともにオン状態となり、温度T1〜T2の間ではトラン
ジスタ26はオン状態でトランジスタ27は温度の上昇
につれて抵抗値を増加させる。
It is assumed that a resistance value of 20 is set. Therefore, between temperatures T and T, the transistor 27 is in the on state,
The resistance value of the transistor 26 decreases as the temperature rises, and at the temperature T1, the transistor 26 and the transistor 27
Both are in an on state, and between temperatures T1 and T2, the transistor 26 is in an on state, and the transistor 27 increases its resistance value as the temperature rises.

従って、弾性表面波素子1Bの負荷容量は、温度T、 
でコンデンサ23とコンデンサ24の容量の合計値とな
って最大となり、それ以下の温度ではトランジスタ2B
の抵抗値の増大によって容量値が減少し、それ以上の温
度ではトランジスタ27の抵抗偵の増大によって容罎値
が減少する。
Therefore, the load capacity of the surface acoustic wave element 1B is the temperature T,
At this temperature, the total capacitance of capacitor 23 and capacitor 24 becomes the maximum value, and at a temperature below that, transistor 2B
The capacitance value decreases due to an increase in the resistance value of the transistor 27, and the capacitance value decreases due to an increase in the resistance value of the transistor 27 at higher temperatures.

一般に、第2図に示すように、負荷台1i1cLを固定
界iCI と、固定合着C2と抵抗値Rとが並列接続さ
れた回路で構成した場合の負荷容量CLは式1式% ただし、ω=2πf(f:発振周波数)ここで、抵抗値
Rがrlからrlに変化した場合の周波数変化Δ(Δf
/f)は、式(3)で表される。
Generally, as shown in Fig. 2, when the load stage 1i1cL is configured with a circuit in which a fixed field iCI, a fixed coupling C2, and a resistance value R are connected in parallel, the load capacity CL is calculated by the formula 1, %. However, ω =2πf (f: oscillation frequency) Here, the frequency change Δ(Δf
/f) is expressed by equation (3).

Δ(Δf/f) −(1/ (1+ CL+ / Co )−1/ (1
+CL2 /Co ) l /2γ・・・・・・・・・
・・・(3) ただし、 rl 2+(1/C+ + 1/C2) 2/(1)2
従って、抵抗値Rを温度に応じて変化させることによっ
て、周囲温度に依存した周波数変化を生じることができ
る。
Δ(Δf/f) −(1/ (1+ CL+ / Co ) −1/ (1
+CL2/Co) l/2γ・・・・・・・・・
...(3) However, rl 2+(1/C+ + 1/C2) 2/(1)2
Therefore, by changing the resistance value R depending on the temperature, it is possible to cause a frequency change depending on the ambient temperature.

本実施例においては、トランジスタ26またはトランジ
スタ27の抵抗値を温度に応じて変化させることによっ
て、周波数変化を生じさせている。第3図の実線で示し
た特性は1本実施例の周波数変化一温度特性の一例であ
り点線で示した弾性表面波素子16の温度変化による発
振周波数の変化を丁度打ち消す特性である。
In this embodiment, the frequency change is caused by changing the resistance value of the transistor 26 or the transistor 27 depending on the temperature. The characteristic shown by the solid line in FIG. 3 is an example of the frequency change-temperature characteristic of this embodiment, and is a characteristic that exactly cancels out the change in the oscillation frequency due to the temperature change of the surface acoustic wave element 16 shown by the dotted line.

なお、抵抗器18〜22を調整することにより、第4図
に示すような各種の特性1,2,3.4を得ることがで
きる。従って、弾性表面波発振器の構成部品の特性偏差
等は、抵抗器18〜22を調整することによっである程
度補償することが口■能である。
By adjusting the resistors 18 to 22, various characteristics 1, 2, 3.4 as shown in FIG. 4 can be obtained. Therefore, it is possible to compensate for characteristic deviations of the components of the surface acoustic wave oscillator to some extent by adjusting the resistors 18-22.

本実施例は、簡単な構成であり、小形化、量産化に適し
、調整が容易であるという効果がある。
This embodiment has a simple configuration, is suitable for miniaturization and mass production, and has the advantage of being easy to adjust.

発明の効果 以上のように、本発明においては、第1および第2のコ
ンデンサにそれぞれ第1および第2のトランジスタを直
列接続した回路を並列に接続して、弾性表面波発振器の
弾性表面波素子の負荷容量を形成し、前記第1および第
2のトランジスタのベースに温度に応じて変化するベー
ス電圧を供給するように構成したから、簡単な構成で小
形化および量産化に適し7、調整が容易で広範囲に亘っ
て弾性表面波素子の温度特性を補償することができると
いう効果がある。
Effects of the Invention As described above, in the present invention, a surface acoustic wave element of a surface acoustic wave oscillator is manufactured by connecting circuits in which first and second transistors are connected in series to first and second capacitors, respectively. Since the structure is configured to form a load capacitance of 7 and supply a base voltage that changes depending on temperature to the bases of the first and second transistors, the structure is simple and suitable for miniaturization and mass production. This has the advantage that the temperature characteristics of the surface acoustic wave element can be easily compensated for over a wide range.

【図面の簡単な説明】[Brief explanation of drawings]

p141図は本発明の一実施例を示す回路図、第2図は
ト記実施例の等価負荷容緻を説明するための図、第3図
は上記実施例の特性の一例を示す図、第4図は−に記実
施例の特性調整例を示す図、第5図は従来の温度補償型
弾性表面波発振器の一例を示す回路図、第6図は温度補
償のない弾性表面波発振器の特性の一例を示す図である
。 図において、1〜7,18〜22:抵抗器、8゜9.2
8:サーミスタ、10〜13,23,24 :コンデン
サ、14:可変容量ダイオード、15:定電圧ダイオー
ド、16:弾性表面波素子、17,28.27 : )
ランジスタ。
Figure 141 is a circuit diagram showing one embodiment of the present invention, Figure 2 is a diagram for explaining the equivalent load density of the embodiment described above, Figure 3 is a diagram showing an example of the characteristics of the above embodiment, Figure 4 shows an example of adjusting the characteristics of the embodiment described in -. Figure 5 is a circuit diagram showing an example of a conventional temperature compensated surface acoustic wave oscillator. Figure 6 shows the characteristics of a surface acoustic wave oscillator without temperature compensation. It is a figure showing an example. In the figure, 1-7, 18-22: Resistor, 8°9.2
8: Thermistor, 10-13, 23, 24: Capacitor, 14: Variable capacitance diode, 15: Constant voltage diode, 16: Surface acoustic wave element, 17, 28.27: )
Ranjista.

Claims (1)

【特許請求の範囲】[Claims] 弾性表面波素子と増幅部とを含む弾性表面波発振器の前
記弾性表面波素子と大地間に負荷容量を接続した弾性表
面波発振器において、前記負荷容量は、第1および第2
のコンデンサと該第1および第2のコンデンサにそれぞ
れ直列接続された第1および第2のトランジスタとで形
成し、感熱抵抗体を通して前記第1および第2のトラン
ジスタのベースに温度依存のベース電圧を供給すること
を特徴とする温度補償型弾性表面波発振器。
In a surface acoustic wave oscillator including a surface acoustic wave element and an amplifying section, a load capacitor is connected between the surface acoustic wave element and the ground, and the load capacitor is connected to a first and a second
and first and second transistors connected in series to the first and second capacitors, respectively, and applying a temperature-dependent base voltage to the bases of the first and second transistors through a heat-sensitive resistor. A temperature compensated surface acoustic wave oscillator.
JP24673384A 1984-11-21 1984-11-21 Temperature compensation surface acoustic wave oscillator Pending JPS61125207A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24673384A JPS61125207A (en) 1984-11-21 1984-11-21 Temperature compensation surface acoustic wave oscillator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24673384A JPS61125207A (en) 1984-11-21 1984-11-21 Temperature compensation surface acoustic wave oscillator

Publications (1)

Publication Number Publication Date
JPS61125207A true JPS61125207A (en) 1986-06-12

Family

ID=17152833

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24673384A Pending JPS61125207A (en) 1984-11-21 1984-11-21 Temperature compensation surface acoustic wave oscillator

Country Status (1)

Country Link
JP (1) JPS61125207A (en)

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