JPS61123156A - Semiconductor device - Google Patents

Abstract

PURPOSE:To work the function of an internal circuit effectively without damaging cascade-connecting properties by fitting terminals, which can be cascade- connected, to opposite two sides of a metallic vessel and other terminals to sides except the opposite two sides of the metallic vessel. CONSTITUTION:A semiconductor chip is loaded on an approximately rectangular metallic vessel, the metallic vessel is formed in structure in which it is hermetically sealed by a metallic cover body, RF terminals 2, 3 and DC terminals 4, 5, 6, 7 are used as ones, which can be cascade-connected, and the metallic vessel is inserted to two sides vertical to the direction of cascade connection of a metallic box body 1A, and one side is employed as the input side and the other side as the output side. Auxiliary terminals 8, 9 are constituted in the same manner as the terminals 2-7, which can be cascade-connected, and each inserted to two sides parallel with the direction of cascade connection of the metallic box body 1A. Accordingly, when an amplifier consisting of an amplifying step and a gain-variable step is constituted by loading each step of the amplifier on separate package, several step can be cascade-connected because the auxiliary terminals required for the gain-variable step are fitted to a package.

Description

[Detailed Description of the Invention] [Field of Industrial Application] The present invention relates to a semiconductor device used in an ultra-high frequency circuit,
In particular, the present invention relates to this type of semiconductor device with an improved puff cage.

BACKGROUND ART A super high frequency semiconductor device constituting a super high frequency circuit module for microwaves, quasi-millimeter waves, etc. used in satellite communications etc. has an amplifier element, an oscillating element, etc. mounted in a package having lead terminals made of microstrip lines.

In order to configure a circuit module by cascade-connecting ultra-high frequency semiconductor devices having the above terminals, the internal circuit must eliminate the influence of reflected waves and match the characteristic impedance. Direct connection is possible.

Further, depending on the internal circuit, in addition to terminals that can be connected in series, auxiliary terminals may be required to control the functions of the internal circuit, and it is desired to improve the pancage to be effective for such semiconductor devices.

[Conventional technology]

FIG. 5 is a plan view, a front view, and a side sectional view of a conventional package that can be connected in series.

A semiconductor device using this package was disclosed by the present inventor in Japanese Patent Application No. 57-073080, and has excellent characteristics for ultra-high frequencies.

In the figure, 1 is a metal base, IA is a metal body, 2 to 7
are electrical terminals, and these terminals are connected to insulating substrates 2A to 7A.
and lead pieces 2B to 7B forming a strip line.
and insulator pieces 2C to 7C, and is inserted into the metal body IA.

Note that the insulator bases 2A to 7A and the insulator pieces 2c to 7
A metallized film is previously applied to the portion of C that is in contact with the metal body IA.

2.3 is a high frequency (RF) terminal, 4, 5, and 6.7 are DC (
D C> terminal.

To connect multiple pieces of this example, remove at least the first and last lead pieces, and strip
This is done by lead pounding the line comrades.

In this example, the internal circuit is a balanced amplifier mounted on a sapphire substrate, which is enclosed in a metal metal IA.

In this device, the electrical terminal is pseudo-coaxial, so it is isolated from the DC terminal by the ground electrode (metal base 1).
No high frequency coupling is observed.

The power gain is 8 to 18 GH2 and 5 to 6 dB, which shows extremely good high frequency characteristics for a device sealed in a small package.

In addition, the human output V S W R (Voltage Sta.
nding WaveRatio, standing wave ratio) is 8 to 1
Very good characteristics of 1.2 to 1.4 at 8 GHz were obtained. For VSWR, if the reflectance is T, then γ=1, VSWR=■ r=o, and VSWR=1. If VSWR is 2 to 3 or less, multi-stage connection is possible, so using this puff cage. C.A.S.P.A.
C (Cascadable Packaged Amp
can be configured.

[Problem that the invention seeks to solve]

For example, when configuring an amplifier consisting of an amplification stage and a variable gain stage in separate packages, a PIN@attenuator is normally used for the variable gain stage, and in order to take advantage of this function, an auxiliary terminal (control However, if a terminal that can be connected in cascade, such as a DC terminal, is used as an auxiliary terminal in order to encapsulate this internal circuit in a conventional package, cascade connectivity will be impaired.

[Means for solving problems]

The solution to the above problem is to have a structure in which a semiconductor chip is mounted in a substantially rectangular metal container, the metal container is hermetically sealed with a metal lid, and cascade-connectable terminals are connected to two opposite terminals of the metal container. Attach the other terminals to the opposite sides of the metal container.
This is achieved by the semiconductor device according to the present invention, which is provided on sides other than the sides.

(Function) By providing a terminal capable of connecting a single '4i connection on the side of the metal container perpendicular to the cascade connection direction, a '4ii connection is made.
By providing auxiliary terminals on sides parallel to the cascade connection direction, the function of the internal circuit can be effectively utilized.

〔Example〕

FIGS. 1(a) to 1(d) are a plan view, a front view, a side view, and a side sectional view, respectively, of a semiconductor device using packages that can be connected in series according to the present invention.

In the figure, 8 and 9 are auxiliary terminals, and these terminals are configured in the same way as the terminals 2 to 7 that can be connected in cascade, and are connected to metal national body I.
They are inserted into the two sides parallel to the cascade connection direction of A.

Terminals that can be connected in cascade are RF terminals 2 and 3, and DC terminal 4.
5,6. '7, it is inserted into the two sides perpendicular to the cascade connection direction of the metal national body IA, and one side is set as the input side and the other side is set as the output side.

11 indicates an internal circuit.

FIG. 2 is a circuit diagram of a variable gain stage mounted on the package.

The figure shows the variable gain stage mentioned above, which normally uses a PIN attenuator.
By changing the loss here, the gain of the amplifier can be adjusted freely.

For example, if you want to keep the gain constant even when the temperature changes, the temperature is detected with a thermistor, and when the temperature is low, the gain of the amplifier increases, so the amount of attenuation of the PIN attenuator is increased. In the opposite case, the amount of attenuation is reduced. PIN
The amount of attenuation of the attenuator is adjusted by changing the bias of the PIN diode, which requires an auxiliary terminal.

The PIN attenuator consists of a PIN (p-type semiconductor-insulating surface 10-type semiconductor structure) diode, which is inserted in parallel to the line. When the resistance of the PIN diode becomes low, the impedance of the line becomes low, and when it becomes 0, the incoming signal is reflected. Conversely, if the resistance of the PIN diode is increased, the signal will pass to the output side, and if the resistance is further increased, the signal will be reflected again. In this way, input power is controlled and output.

If the reflection increases, an amplifier cannot be connected to the input/output side, so 1.
A hybrid coupler is installed on the input and output sides, and the reflected power is absorbed by the terminating resistor. In this way, RF
Even if the signal coming in from the input terminal is reflected by the PIN attenuator, it does not come out to the RF terminal, so it appears to be terminated with an upper frame impedance of 50Ω. Therefore, a cascade connection is possible, with amplification stages connected on both the input and output sides.

The amplification stage corresponding to the conventional example has a single-ended amplifier instead of a PIN diode, and the power reflected here is absorbed by a hybrid coupler installed on the input/output side to improve the input/output VSWR. However, the PIN attenuator has exactly the same configuration, except that it requires an auxiliary terminal.

FIG. 3 is an internal diagram of the variable gain stage package.

In the figure, PINDi represents a PIN diode, R represents a terminating resistor, and C represents a capacitor.

12 is a gold ribbon for ribbon connection, and the hybrid coupler is formed on ceramic or sapphire substrates 13 and 14. Wiring of each part is performed using wires 15.
22B, 3B
are an RF input terminal and an RF output terminal, respectively.

4B and 5B are amplifier power supply terminals, for example gate terminals, and 6B and 7B are amplifier power supply terminals, for example drain terminals.

Reference numerals 88 and 9B are auxiliary terminals and are gain control terminals.

FIG. 4 is a plan view of an amplification stage and a variable gain stage connected in cascade.

In the figure, A represents an amplification stage and GC represents a variable gain stage, and the variable gain stages can be connected in cascade according to the present invention.

[Effects of the Invention] As explained in detail above, according to the present invention, when each stage of an amplifier consisting of an amplification stage and a variable gain stage is mounted in separate pancages, the variable gain stage has the following effects:
The package has the necessary auxiliary terminals to take advantage of its functionality, allowing cascade connections.

[Brief explanation of drawings]

1(a) to +dl are respectively a plan view, a front view, a side view, and a side sectional view of a semiconductor device using a puff cage capable of N-connection according to the present invention, and FIG. 2 is a diagram of a variable gain stage mounted on the package. Circuit diagram, Figure 3 is an internal diagram of the variable gain stage package, Figure 4 is a plan view of a cascade connection of an amplification stage and variable gain stage, and Figure 5 is a plan view and front view of a conventional package that can be connected in cascade. FIG. In the figure, ■ is a metal base, IA is a metal body, 2.3 is an RF terminal, 4, 5. 6. 7 is a DC terminal, 2A to 7A are insulating substrates, 2B to 7B are lead pieces, 2C to 7C are insulating pieces, 8.9 is an auxiliary terminal 11 is an internal circuit, 12 is a gold ribbon, 13, 1
4 is a ceramic or sapphire substrate, 15 is a wire, PINDi is a PIN diode, R is a terminating resistor, C is a capacitor, A is an amplification stage,
GC indicates a variable gain stage. 15. ￥-I closed*-2c IJ-J-F ηara#3Ii2T γD nositrol member town

Claims (1)

[Claims] The semiconductor chip is mounted in a substantially rectangular metal container, and the metal container is hermetically sealed with a metal lid. Terminals that can be connected in cascade are placed on two opposing sides of the metal container, and other terminals are placed on opposite sides of the metal container. A semiconductor device characterized in that it is provided on a side other than two opposing sides of the metal container.