JPS61122189A - 帯状シリコン結晶の製造装置 - Google Patents

帯状シリコン結晶の製造装置

Info

Publication number
JPS61122189A
JPS61122189A JP24480284A JP24480284A JPS61122189A JP S61122189 A JPS61122189 A JP S61122189A JP 24480284 A JP24480284 A JP 24480284A JP 24480284 A JP24480284 A JP 24480284A JP S61122189 A JPS61122189 A JP S61122189A
Authority
JP
Japan
Prior art keywords
band
die
crystal
silicon
shaped silicon
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP24480284A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0137357B2 (enrdf_load_stackoverflow
Inventor
Masanaru Abe
阿部　昌匠
Toshiro Matsui
松井　都四郎
Naoaki Maki
真木　直明
Toshiyuki Sawada
沢田　俊幸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP24480284A priority Critical patent/JPS61122189A/ja
Publication of JPS61122189A publication Critical patent/JPS61122189A/ja
Publication of JPH0137357B2 publication Critical patent/JPH0137357B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/34—Edge-defined film-fed crystal-growth using dies or slits

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP24480284A 1984-11-20 1984-11-20 帯状シリコン結晶の製造装置 Granted JPS61122189A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP24480284A JPS61122189A (ja) 1984-11-20 1984-11-20 帯状シリコン結晶の製造装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP24480284A JPS61122189A (ja) 1984-11-20 1984-11-20 帯状シリコン結晶の製造装置

Publications (2)

Publication Number Publication Date
JPS61122189A true JPS61122189A (ja) 1986-06-10
JPH0137357B2 JPH0137357B2 (enrdf_load_stackoverflow) 1989-08-07

Family

ID=17124155

Family Applications (1)

Application Number Title Priority Date Filing Date
JP24480284A Granted JPS61122189A (ja) 1984-11-20 1984-11-20 帯状シリコン結晶の製造装置

Country Status (1)

Country Link
JP (1) JPS61122189A (enrdf_load_stackoverflow)

Also Published As

Publication number Publication date
JPH0137357B2 (enrdf_load_stackoverflow) 1989-08-07

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Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees