JPS61119090A - 半導体レ−ザの製造方法 - Google Patents

半導体レ−ザの製造方法

Info

Publication number
JPS61119090A
JPS61119090A JP59241071A JP24107184A JPS61119090A JP S61119090 A JPS61119090 A JP S61119090A JP 59241071 A JP59241071 A JP 59241071A JP 24107184 A JP24107184 A JP 24107184A JP S61119090 A JPS61119090 A JP S61119090A
Authority
JP
Japan
Prior art keywords
layer
light absorbing
semiconductor substrate
semiconductor laser
light absorption
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59241071A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0137873B2 (enExample
Inventor
Masahito Mushigami
雅人 虫上
Haruo Tanaka
田中　治夫
Yuuji Ishida
祐士 石田
Naotaro Nakada
直太郎 中田
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to JP59241071A priority Critical patent/JPS61119090A/ja
Publication of JPS61119090A publication Critical patent/JPS61119090A/ja
Publication of JPH0137873B2 publication Critical patent/JPH0137873B2/ja
Granted legal-status Critical Current

Links

Landscapes

  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Semiconductor Lasers (AREA)
JP59241071A 1984-11-14 1984-11-14 半導体レ−ザの製造方法 Granted JPS61119090A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59241071A JPS61119090A (ja) 1984-11-14 1984-11-14 半導体レ−ザの製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59241071A JPS61119090A (ja) 1984-11-14 1984-11-14 半導体レ−ザの製造方法

Publications (2)

Publication Number Publication Date
JPS61119090A true JPS61119090A (ja) 1986-06-06
JPH0137873B2 JPH0137873B2 (enExample) 1989-08-09

Family

ID=17068862

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59241071A Granted JPS61119090A (ja) 1984-11-14 1984-11-14 半導体レ−ザの製造方法

Country Status (1)

Country Link
JP (1) JPS61119090A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289621A (ja) * 1985-06-18 1986-12-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分子線エピタキシヤル成長方法
JPH03268471A (ja) * 1990-03-19 1991-11-29 Sharp Corp 半導体レーザおよびその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61289621A (ja) * 1985-06-18 1986-12-19 Kokusai Denshin Denwa Co Ltd <Kdd> 分子線エピタキシヤル成長方法
JPH03268471A (ja) * 1990-03-19 1991-11-29 Sharp Corp 半導体レーザおよびその製造方法

Also Published As

Publication number Publication date
JPH0137873B2 (enExample) 1989-08-09

Similar Documents

Publication Publication Date Title
JPH0137871B2 (enExample)
JPH0137873B2 (enExample)
JPH0137870B2 (enExample)
JPH0513881A (ja) 半導体レーザの製造方法
JPS6142985A (ja) 半導体レ−ザおよびその製造方法
JPH1093199A5 (enExample)
JPS6367351B2 (enExample)
JPS61166090A (ja) 半導体レ−ザの製造方法
JPS61164291A (ja) 半導体レ−ザの製造方法
JPH0327584A (ja) 半導体レーザの製造方法
JPH0695583B2 (ja) 半導体レ−ザの製造方法
JPH0343770B2 (enExample)
JP3154430B2 (ja) Ａｌ Ｇａ Ａｓ 薄膜成長方法
JPH0533551B2 (enExample)
JPH0533550B2 (enExample)
JP3881041B2 (ja) 化合物半導体素子の製造方法
JPH04245490A (ja) 半導体レーザの製造方法
JPH04207017A (ja) 半導体装置の製造方法
JP2717016B2 (ja) 半導体レーザおよびその製造方法
JPH07263800A (ja) 半導体レーザおよびその製造方法
JPS61187285A (ja) 半導体レ−ザ装置
JPS5837976B2 (ja) 不純物拡散法
JPS64835B2 (enExample)
JPH0158649B2 (enExample)
JPH02194685A (ja) 半導体レーザの製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees