JPS61119090A - 半導体レ−ザの製造方法 - Google Patents
半導体レ−ザの製造方法Info
- Publication number
- JPS61119090A JPS61119090A JP24107184A JP24107184A JPS61119090A JP S61119090 A JPS61119090 A JP S61119090A JP 24107184 A JP24107184 A JP 24107184A JP 24107184 A JP24107184 A JP 24107184A JP S61119090 A JPS61119090 A JP S61119090A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- light absorbing
- semiconductor substrate
- semiconductor laser
- light absorption
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 34
- 238000004519 manufacturing process Methods 0.000 title claims description 17
- 238000000034 method Methods 0.000 claims abstract description 25
- 239000000758 substrate Substances 0.000 claims abstract description 18
- 238000001704 evaporation Methods 0.000 claims abstract description 13
- 230000008020 evaporation Effects 0.000 claims abstract description 11
- 238000005530 etching Methods 0.000 claims abstract description 9
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims abstract description 8
- 239000010410 layer Substances 0.000 claims description 74
- 238000005253 cladding Methods 0.000 claims description 21
- 230000031700 light absorption Effects 0.000 claims description 11
- 230000002265 prevention Effects 0.000 claims description 5
- 239000011241 protective layer Substances 0.000 claims description 5
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 4
- 238000010030 laminating Methods 0.000 claims 1
- 239000012535 impurity Substances 0.000 abstract description 8
- 230000003287 optical effect Effects 0.000 abstract description 5
- 229920002120 photoresistant polymer Polymers 0.000 abstract description 5
- 229910052785 arsenic Inorganic materials 0.000 abstract description 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 10
- 230000000694 effects Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000002161 passivation Methods 0.000 description 2
- 238000001259 photo etching Methods 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000007796 conventional method Methods 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
Landscapes
- Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
- Semiconductor Lasers (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24107184A JPS61119090A (ja) | 1984-11-14 | 1984-11-14 | 半導体レ−ザの製造方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP24107184A JPS61119090A (ja) | 1984-11-14 | 1984-11-14 | 半導体レ−ザの製造方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS61119090A true JPS61119090A (ja) | 1986-06-06 |
| JPH0137873B2 JPH0137873B2 (en:Method) | 1989-08-09 |
Family
ID=17068862
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP24107184A Granted JPS61119090A (ja) | 1984-11-14 | 1984-11-14 | 半導体レ−ザの製造方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61119090A (en:Method) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61289621A (ja) * | 1985-06-18 | 1986-12-19 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分子線エピタキシヤル成長方法 |
| JPH03268471A (ja) * | 1990-03-19 | 1991-11-29 | Sharp Corp | 半導体レーザおよびその製造方法 |
-
1984
- 1984-11-14 JP JP24107184A patent/JPS61119090A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS61289621A (ja) * | 1985-06-18 | 1986-12-19 | Kokusai Denshin Denwa Co Ltd <Kdd> | 分子線エピタキシヤル成長方法 |
| JPH03268471A (ja) * | 1990-03-19 | 1991-11-29 | Sharp Corp | 半導体レーザおよびその製造方法 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0137873B2 (en:Method) | 1989-08-09 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPS61119090A (ja) | 半導体レ−ザの製造方法 | |
| JPH0137871B2 (en:Method) | ||
| JPH0137870B2 (en:Method) | ||
| JPH0513881A (ja) | 半導体レーザの製造方法 | |
| JPS6142985A (ja) | 半導体レ−ザおよびその製造方法 | |
| JPH1093199A5 (en:Method) | ||
| JPS6367351B2 (en:Method) | ||
| JPS61166090A (ja) | 半導体レ−ザの製造方法 | |
| JPS61164291A (ja) | 半導体レ−ザの製造方法 | |
| JPH0327584A (ja) | 半導体レーザの製造方法 | |
| JPH0695583B2 (ja) | 半導体レ−ザの製造方法 | |
| JPH0343770B2 (en:Method) | ||
| JP3154430B2 (ja) | Ａｌ Ｇａ Ａｓ 薄膜成長方法 | |
| JPH0533551B2 (en:Method) | ||
| JPH0533550B2 (en:Method) | ||
| JP3881041B2 (ja) | 化合物半導体素子の製造方法 | |
| JPH04245490A (ja) | 半導体レーザの製造方法 | |
| JP2717016B2 (ja) | 半導体レーザおよびその製造方法 | |
| JPH07263800A (ja) | 半導体レーザおよびその製造方法 | |
| JPS61187285A (ja) | 半導体レ−ザ装置 | |
| JPS5837976B2 (ja) | 不純物拡散法 | |
| JPS64835B2 (en:Method) | ||
| JPH02194683A (ja) | 半導体レーザ | |
| JPH0158649B2 (en:Method) | ||
| JPH04207017A (ja) | 半導体装置の製造方法 |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| LAPS | Cancellation because of no payment of annual fees |