JPS61116826A - 薄膜形成方法 - Google Patents

薄膜形成方法

Info

Publication number
JPS61116826A
JPS61116826A JP59238109A JP23810984A JPS61116826A JP S61116826 A JPS61116826 A JP S61116826A JP 59238109 A JP59238109 A JP 59238109A JP 23810984 A JP23810984 A JP 23810984A JP S61116826 A JPS61116826 A JP S61116826A
Authority
JP
Japan
Prior art keywords
thin film
electrode
discharge
electrodes
electrical
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59238109A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0544820B2 (enExample
Inventor
Kunio Nishimura
西村　国夫
Takehisa Nakayama
中山　威久
Kazunaga Tsushimo
津下　和永
Yoshihisa Owada
善久 太和田
Hisanori Hirata
平田　久典
Masanobu Izumina
泉名　政信
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Kanegafuchi Chemical Industry Co Ltd
Original Assignee
Kanegafuchi Chemical Industry Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kanegafuchi Chemical Industry Co Ltd filed Critical Kanegafuchi Chemical Industry Co Ltd
Priority to JP59238109A priority Critical patent/JPS61116826A/ja
Publication of JPS61116826A publication Critical patent/JPS61116826A/ja
Publication of JPH0544820B2 publication Critical patent/JPH0544820B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/24—
    • H10P14/3411—

Landscapes

  • Photovoltaic Devices (AREA)
  • Recrystallisation Techniques (AREA)
JP59238109A 1984-11-12 1984-11-12 薄膜形成方法 Granted JPS61116826A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59238109A JPS61116826A (ja) 1984-11-12 1984-11-12 薄膜形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59238109A JPS61116826A (ja) 1984-11-12 1984-11-12 薄膜形成方法

Publications (2)

Publication Number Publication Date
JPS61116826A true JPS61116826A (ja) 1986-06-04
JPH0544820B2 JPH0544820B2 (enExample) 1993-07-07

Family

ID=17025307

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59238109A Granted JPS61116826A (ja) 1984-11-12 1984-11-12 薄膜形成方法

Country Status (1)

Country Link
JP (1) JPS61116826A (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009235884A (ja) * 2008-03-26 2009-10-15 Masatake Oshima 道路用流出抑制排水工
WO2009142187A1 (ja) * 2008-05-22 2009-11-26 株式会社カネカ 薄膜光電変換装置とその製造方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737821A (en) * 1980-08-20 1982-03-02 Kokusai Electric Co Ltd Vapor phase reaction device
JPS5842226A (ja) * 1981-09-07 1983-03-11 Nec Corp プラズマ半導体製造装置

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5737821A (en) * 1980-08-20 1982-03-02 Kokusai Electric Co Ltd Vapor phase reaction device
JPS5842226A (ja) * 1981-09-07 1983-03-11 Nec Corp プラズマ半導体製造装置

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009235884A (ja) * 2008-03-26 2009-10-15 Masatake Oshima 道路用流出抑制排水工
WO2009142187A1 (ja) * 2008-05-22 2009-11-26 株式会社カネカ 薄膜光電変換装置とその製造方法
JP5069791B2 (ja) * 2008-05-22 2012-11-07 株式会社カネカ 薄膜光電変換装置とその製造方法
US8907204B2 (en) 2008-05-22 2014-12-09 Kaneka Corporation Thin film photoelectric conversion device and method for manufacturing the same

Also Published As

Publication number Publication date
JPH0544820B2 (enExample) 1993-07-07

Similar Documents

Publication Publication Date Title
US4664890A (en) Glow-discharge decomposition apparatus
EP0002383A1 (en) Method and apparatus for depositing semiconductor and other films
JP3501668B2 (ja) プラズマｃｖｄ方法及びプラズマｃｖｄ装置
DE69715962T2 (de) Plasma Behandlung Anlage und Behandlung-Methode
CN103250470A (zh) 等离子体发生器
KR101101751B1 (ko) 플라즈마 발생 장치
US4207540A (en) Gas laser system
JPH0359588B2 (enExample)
JPS60111419A (ja) グロー放電の陽光柱内のガスから無定形半導体材料層を被着する方法
JPS61116826A (ja) 薄膜形成方法
KR101210063B1 (ko) 유전성 기판의 베이스에서 디스크 형태의 공작물의 제조방법 및 그를 위한 진공 공정 시스템
US4461239A (en) Reduced capacitance electrode assembly
JP2002025919A (ja) 容量結合型プラズマ装置および電子デバイスの製造方法
JPS6066422A (ja) 半導体製造法
JPH0719751B2 (ja) 成膜方法
DE2149606C3 (de) Vorrichtung zur Beschichtung von Substraten durch Hochfrequenz-Kathodenzerstäubung
CN215163122U (zh) 镀膜装置
DE10015699B4 (de) Schaltungsanordnung zur Impedanzkompensation
JPH0763057B2 (ja) 多電極薄膜形成方法
JP4158729B2 (ja) プラズマｃｖｄ装置
JP6703198B2 (ja) 高周波電圧を供給するための内部電気回路網を有する電極ユニット及びプラズマ処理装置用のキャリア装置
Ryu et al. Alternating-current thin-film electroluminescent devices with multiple dielectric layers
JPH0523050B2 (enExample)
TW202526093A (zh) 襯底處理裝置
JPS60111479A (ja) 非晶質シリコン太陽電池の製造方法

Legal Events

Date Code Title Description
LAPS Cancellation because of no payment of annual fees