JPS61114543A - 半導体評価装置 - Google Patents

半導体評価装置

Info

Publication number
JPS61114543A
JPS61114543A JP59234930A JP23493084A JPS61114543A JP S61114543 A JPS61114543 A JP S61114543A JP 59234930 A JP59234930 A JP 59234930A JP 23493084 A JP23493084 A JP 23493084A JP S61114543 A JPS61114543 A JP S61114543A
Authority
JP
Japan
Prior art keywords
specimen
wafer
semiconductor
microwave
waveguide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59234930A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0574937B2 (enExample
Inventor
Yoshihisa Fujisaki
芳久 藤崎
Yukio Takano
高野　幸男
Akihiko Matsuo
松尾　陽彦
Takeshi Tajima
但馬　武
Matsuo Yamazaki
山崎　松夫
Kenjiro Tamura
田村　憲司郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP59234930A priority Critical patent/JPS61114543A/ja
Publication of JPS61114543A publication Critical patent/JPS61114543A/ja
Publication of JPH0574937B2 publication Critical patent/JPH0574937B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P74/00—

Landscapes

  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
JP59234930A 1984-11-09 1984-11-09 半導体評価装置 Granted JPS61114543A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59234930A JPS61114543A (ja) 1984-11-09 1984-11-09 半導体評価装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59234930A JPS61114543A (ja) 1984-11-09 1984-11-09 半導体評価装置

Publications (2)

Publication Number Publication Date
JPS61114543A true JPS61114543A (ja) 1986-06-02
JPH0574937B2 JPH0574937B2 (enExample) 1993-10-19

Family

ID=16978501

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59234930A Granted JPS61114543A (ja) 1984-11-09 1984-11-09 半導体評価装置

Country Status (1)

Country Link
JP (1) JPS61114543A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174733A (ja) * 1985-01-30 1986-08-06 Mitsubishi Metal Corp ガリウム砒素半導体ウエハのｅｌ２分布測定方法
JPH02248062A (ja) * 1989-03-20 1990-10-03 Semitetsukusu:Kk 半導体材料のライフタイム計測方法及びその装置
JP2008051719A (ja) * 2006-08-25 2008-03-06 Kobe Steel Ltd 薄膜半導体の結晶性測定装置及びその方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118373A (en) * 1977-03-25 1978-10-16 Mitsubishi Metal Corp Method of measuring characteristic of semiconductor by microwave
JPS59114834A (ja) * 1982-12-21 1984-07-03 Agency Of Ind Science & Technol 半導体中に含まれる深い不純物準位或いは結晶欠陥準位の測定方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS53118373A (en) * 1977-03-25 1978-10-16 Mitsubishi Metal Corp Method of measuring characteristic of semiconductor by microwave
JPS59114834A (ja) * 1982-12-21 1984-07-03 Agency Of Ind Science & Technol 半導体中に含まれる深い不純物準位或いは結晶欠陥準位の測定方法

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61174733A (ja) * 1985-01-30 1986-08-06 Mitsubishi Metal Corp ガリウム砒素半導体ウエハのｅｌ２分布測定方法
JPH02248062A (ja) * 1989-03-20 1990-10-03 Semitetsukusu:Kk 半導体材料のライフタイム計測方法及びその装置
JP2008051719A (ja) * 2006-08-25 2008-03-06 Kobe Steel Ltd 薄膜半導体の結晶性測定装置及びその方法

Also Published As

Publication number Publication date
JPH0574937B2 (enExample) 1993-10-19

Similar Documents

Publication Publication Date Title
US4704576A (en) Microwave measuring and apparatus for contactless non-destructive testing of photosensitive materials
EP0077021B1 (en) Apparatus for nondestructively measuring characteristics of a semiconductor wafer having a junction
US4286215A (en) Method and apparatus for the contactless monitoring carrier lifetime in semiconductor materials
US4433288A (en) Method and apparatus for determining minority carrier diffusion length in semiconductors
US4967152A (en) Apparatus including a focused UV light source for non-contact measurement and alteration of electrical properties of conductors
SU1669407A3 (ru) Способ определени электрически активных примесей в полупроводниковых структурах с р - п-переходом
JPH02119236A (ja) 直線状定フォトン束光電圧測定値から少数担体拡散長を判定するための方法および装置
US4837506A (en) Apparatus including a focused UV light source for non-contact measuremenht and alteration of electrical properties of conductors
Elliot Thick junction radiation detectors made by ion drift
US6653850B2 (en) Surface passivation method and arrangement for measuring the lifetime of minority carriers in semiconductors
JPS61114543A (ja) 半導体評価装置
US4755049A (en) Method and apparatus for measuring the ion implant dosage in a semiconductor crystal
Lagowski et al. Non-contact deep level transient spectroscopy (DLTS) based on surface photovoltage
JPS6160576B2 (enExample)
JPS61101045A (ja) 半導体評価方法
JPS63231251A (ja) 電子スピン共鳴装置
WO2001004610A2 (en) Method and apparatus for sensitive measurement of the lifetime of minority carriers in semiconductor materials
Wang et al. Use of microwave photoconductivity to measure semiconductor properties
US7573271B2 (en) Apparatus for measuring electric characteristics of semiconductor
JPS61173171A (ja) 半導体ウエハの抵抗率測定法
Goodman Improvements in method and apparatus for determining minority carrier diffusion length
JPS59150443A (ja) 半導体のキヤリアライフタイム計測装置
JPH05157712A (ja) 磁気共鳴現象の測定装置およびその測定方法
JPH02144933A (ja) 半導体評価方法
RU2101721C1 (ru) Устройство для определения электрофизических параметров полупроводниковых пластин