JPS61113268A - Lead frame - Google Patents
Lead frameInfo
- Publication number
- JPS61113268A JPS61113268A JP59235558A JP23555884A JPS61113268A JP S61113268 A JPS61113268 A JP S61113268A JP 59235558 A JP59235558 A JP 59235558A JP 23555884 A JP23555884 A JP 23555884A JP S61113268 A JPS61113268 A JP S61113268A
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- resin
- lead
- semiconductor device
- parts
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49548—Cross section geometry
- H01L23/49551—Cross section geometry characterised by bent parts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
- H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
- H01L2224/45001—Core members of the connector
- H01L2224/45099—Material
- H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Physics & Mathematics (AREA)
- Geometry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Lead Frames For Integrated Circuits (AREA)
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、樹脂封止形半導体装置の組み立てに使用する
リードフレームに関するものである。DETAILED DESCRIPTION OF THE INVENTION Field of the Invention The present invention relates to a lead frame used for assembling a resin-sealed semiconductor device.
従来の技術
従来の樹脂封止形半導体装置の断面構造は、通常第２図
に示すような構造であり、封止樹脂の中に封入される内
部リード部はワイヤーボンディング面に多少の凹凸があ
るものの、全体としては平坦であった。なお、第２図に
おいて、１は封止樹脂外へ導出される外部リード部、２
は内部リード部、３は金属細線、４は半導体素子載置部
、５は半導体素子、６は金属細線の一端が接続されるワ
イヤーボンド部、そして７は封止樹脂である。BACKGROUND OF THE INVENTION The cross-sectional structure of a conventional resin-sealed semiconductor device is normally as shown in Figure 2, and the internal lead portion encapsulated in the sealing resin has some unevenness on the wire bonding surface. However, overall it was flat. In addition, in FIG. 2, 1 is an external lead portion led out to the outside of the sealing resin;
3 is an internal lead portion, 3 is a thin metal wire, 4 is a semiconductor element mounting portion, 5 is a semiconductor element, 6 is a wire bond portion to which one end of the thin metal wire is connected, and 7 is a sealing resin.
発明が解決しようとする問題点
通常の樹脂封止半導体装置では、樹脂とリードフレーム
の密着性は必ずしも十分ではない。このため、図示した
従来の構造では、不純物を含んだ水分が封止樹脂と内部
リード部との界面を通り、さらに金属細線を伝わって、
半導体素子のアルミニウム＋１）パッド部あるいはＡｊ
配緋部に達することがあった。このようにして浸入する
と、不純物を含む水分とＡβとの腐食反応が生じλｇ配
線切れ等の半導体素子にとって致命的な不良が発生し、
樹脂封止形半導体装置の信頼性を著しく低下させるとい
う問題があった。Problems to be Solved by the Invention In ordinary resin-sealed semiconductor devices, the adhesion between the resin and the lead frame is not necessarily sufficient. For this reason, in the conventional structure shown in the figure, moisture containing impurities passes through the interface between the sealing resin and the internal lead part, and then travels through the thin metal wire.
Aluminum of semiconductor element +1) Pad part or Aj
There were times when it reached Hibu. If the water enters in this way, a corrosion reaction between moisture containing impurities and Aβ will occur, causing fatal defects to the semiconductor device such as broken λg wiring.
There is a problem in that the reliability of the resin-sealed semiconductor device is significantly reduced.
本発明は、リードフレームと封止樹脂との界面からの水
分の浸入を阻止し、上記の問題を排除できるリードフレ
ームの提供を意図するものである。The present invention aims to provide a lead frame that can prevent moisture from entering through the interface between the lead frame and the sealing resin, thereby eliminating the above-mentioned problems.
問題点を解決するための手段
本発明のリードフレームは、封止樹脂内へ封止される内
部リード部の中間部に、ワイヤーボンド面とは反対の面
側へ凸字形に突出する曲げ加工を施した構造となってい
る。Means for Solving the Problems The lead frame of the present invention has a bending process that protrudes in a convex shape toward the side opposite to the wire bonding surface at the middle portion of the internal lead portion sealed in the sealing resin. The structure has been
作用
この構造によれば、内部リード部と封止樹脂の界面の長
さが長くなり、かつ、封止樹脂とリードフレームとの密
着性が向上する。Effect: According to this structure, the length of the interface between the internal lead portion and the sealing resin is increased, and the adhesion between the sealing resin and the lead frame is improved.
実施例
第１図は本発明のリードフレームとこれを用いて形成し
た樹脂封止形半導体装置の構造を示す断面図であり、内
部リード部２の中間部にワイヤーボンド面とは反対の面
側へ凸字形に突出する曲げ加工部８を設けたリードフレ
ームが用いられている点で従来のものとは相異している
。なお、この曲げ加工により、内部リード部の長きは従
来のものの長さの２倍以上に選定されている。Embodiment FIG. 1 is a sectional view showing the structure of a lead frame of the present invention and a resin-sealed semiconductor device formed using the lead frame. This differs from the conventional one in that a lead frame having a bent portion 8 projecting in a convex shape is used. By this bending process, the length of the internal lead portion is selected to be more than twice the length of the conventional one.
本発明のリードフレームを用いて形成した樹脂封止形半
導体装置（以後、本発明品と記す）と従来のリードフレ
ームを用いて形成した樹脂封止形半導体装置（以後、従
来品と記す）に対して、強制的に水分を侵入させる加速
寿命試験を同一条件で行ったところ、本発明品では特性
不良が発生しなかったが、従来品ではＡ７Ｊ腐食などに
よる特性不良が発生した。この原因を究明するために、
ＸＭ人（Ｘ線マイクロアナライザー）による詳細な解析
を行った。第１図で示した本発明品の場合、外部リード
部１から塩素（Ｃβ）が検出されたが、内部リード部２
、金属細線３、半導体素子６からはナトリウム（Ｎａ）
、カリウム（Ｋ）、塩素ＣＣＩ＞あるいは硫黄（Ｓ）等
の不純物は検出されなかった。一方、第２図で示した従
来品の場合、外部リード部１、内部リード部２、金属細
線３および半導体素子の人！腐食箇所のいずれの位置か
らもＣ１が多量に検出された。すなわち、従来品の不良
原因は、Ｃβを含んだ水分が封止樹脂と内部リード部と
の界面を通り、金属細線に到達し、さらに金属細線を伝
わって、半導体素子のＡ７Ｊ配線部にまで侵入したこと
にあると結論づけることができる。換言すれば、封止樹
脂と内部リード部との界面の長さが十分に確保されてい
ないこと、また、両者の密着性が良好でないことが不良
の原因となる。A resin-encapsulated semiconductor device formed using the lead frame of the present invention (hereinafter referred to as the present invention product) and a resin-encapsulated semiconductor device formed using the conventional lead frame (hereinafter referred to as the conventional product). On the other hand, when an accelerated life test was conducted under the same conditions in which water was forcibly penetrated, the product of the present invention did not exhibit any characteristic defects, but the conventional product exhibited characteristic defects due to A7J corrosion, etc. In order to investigate the cause of this,
Detailed analysis was performed by XM personnel (X-ray microanalyzer). In the case of the product of the present invention shown in FIG. 1, chlorine (Cβ) was detected from the external lead part 1, but the internal lead part 2
, sodium (Na) from the thin metal wire 3 and the semiconductor element 6
No impurities such as , potassium (K), chlorine CCI> or sulfur (S) were detected. On the other hand, in the case of the conventional product shown in FIG. 2, there is an external lead part 1, an internal lead part 2, a thin metal wire 3, and a semiconductor element. A large amount of C1 was detected from all the corroded locations. In other words, the cause of the failure of the conventional product is that water containing Cβ passes through the interface between the sealing resin and the internal lead, reaches the thin metal wire, travels through the thin metal wire, and invades the A7J wiring section of the semiconductor element. We can conclude that this is what happened. In other words, failure is caused by the fact that the length of the interface between the sealing resin and the internal lead portion is not sufficiently secured, and the adhesion between the two is not good.
以上、デュアルインライン形のリードフレームを例示し
て本発明を説明したが、本発明は、シングルインライン
形のリードフレームにも適用することができる。Although the present invention has been described above by exemplifying a dual in-line type lead frame, the present invention can also be applied to a single in-line type lead frame.
発明の効果
本発明のリードフレームでは、水分の浸入路となる内部
リードと封止樹脂との界面の長さが従来のものにくらべ
て飛躍的に長くなるため、水分が金属細線にまで到達せ
ず、また、曲げ加工部が樹脂に対して係止部として作用
するため、緊密な樹脂封止状態が得られ、封止樹脂とリ
ードフレームとの密着性も向上する。したがって、樹脂
封止形半導体装置の信頼性を向上させる効果が奏される
。Effects of the Invention In the lead frame of the present invention, the length of the interface between the internal lead and the sealing resin, which serves as a path for moisture to infiltrate, is dramatically longer than that of conventional lead frames, which prevents moisture from reaching the thin metal wire. First, since the bent portion acts as a locking portion for the resin, a tight resin sealing state is obtained, and the adhesion between the sealing resin and the lead frame is also improved. Therefore, the effect of improving the reliability of the resin-sealed semiconductor device is achieved.
第１図は本発明のリードフレームを用いて形成した樹脂
封止形半導体装置の断面図、第２図は従来のリードフレ
ームを用いて形成した樹脂封止形半導体装置の断面図で
ある。
１・・・・・・外部リード部、２・・・・・・内部リー
ド部、３・・・・・・金属細線、４・・・・・・半導体
装置部、５・・・・・・半導体素子、６・・・・・・内
部リード部のワイヤボンド部、７・・・・・・封止樹脂
、８・・・・・・曲げ加工部。FIG. 1 is a cross-sectional view of a resin-sealed semiconductor device formed using the lead frame of the present invention, and FIG. 2 is a cross-sectional view of a resin-sealed semiconductor device formed using a conventional lead frame. DESCRIPTION OF SYMBOLS 1...External lead part, 2...Internal lead part, 3...Metal thin wire, 4...Semiconductor device part, 5...... Semiconductor element, 6...Wire bond part of internal lead part, 7... Sealing resin, 8...Bending part.
Claims (1)
するリードフレームの前記内部リード部の中間部分にワ
イヤーボンド面とは反対の面側へ凸字形に突出する曲げ
加工が施されていることを特徴とするリードフレーム。The intermediate portion of the internal lead portion of a lead frame having a semiconductor element mounting portion, an internal lead portion, and an external lead portion is bent to protrude in a convex shape toward the side opposite to the wire bonding surface. Characteristic lead frame.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59235558A JPS61113268A (en) | 1984-11-08 | 1984-11-08 | Lead frame |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP59235558A JPS61113268A (en) | 1984-11-08 | 1984-11-08 | Lead frame |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61113268A true JPS61113268A (en) | 1986-05-31 |
Family
ID=16987760
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP59235558A Pending JPS61113268A (en) | 1984-11-08 | 1984-11-08 | Lead frame |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61113268A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010530622A (en) * | 2007-06-21 | 2010-09-09 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Electrical components |
-
1984
- 1984-11-08 JP JP59235558A patent/JPS61113268A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2010530622A (en) * | 2007-06-21 | 2010-09-09 | ローベルト ボツシユ ゲゼルシヤフト ミツト ベシユレンクテル ハフツング | Electrical components |
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