JPH06140525A - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
JPH06140525A
JPH06140525A JP30946492A JP30946492A JPH06140525A JP H06140525 A JPH06140525 A JP H06140525A JP 30946492 A JP30946492 A JP 30946492A JP 30946492 A JP30946492 A JP 30946492A JP H06140525 A JPH06140525 A JP H06140525A
Authority
JP
Japan
Prior art keywords
chip
semiconductor device
resin
metal layer
stress
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP30946492A
Other languages
Japanese (ja)
Inventor
Hiroshi Hizaki
浩 檜崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Nippon Steel Corp
Original Assignee
Nippon Steel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Steel Corp filed Critical Nippon Steel Corp
Priority to JP30946492A priority Critical patent/JPH06140525A/en
Publication of JPH06140525A publication Critical patent/JPH06140525A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Lead Frames For Integrated Circuits (AREA)
  • Structures Or Materials For Encapsulating Or Coating Semiconductor Devices Or Solid State Devices (AREA)

Abstract

PURPOSE:To improve a strength of resistance to humidity and to reduce a stress on a chip when the chip is mounted on a substrate or the like in a resin seal type semiconductor device. CONSTITUTION:This semiconductor device comprises a hollow structure around a chip 3 whereas it is of resin seal type and also comprises a metal layer 2 on the inside wall of a hollow part 8. The hollow structure eliminates a stress on the chip 3 from the surroundings, so that a crack of a sealing resin 1 or a crack of a covering film of the chip 3 are hardly generated and the metal layer 2 prevents penetration of a moisture content from the outside.

Description

【発明の詳細な説明】Detailed Description of the Invention

【0001】[0001]

【産業上の利用分野】本発明は、半導体装置に関し、特
に樹脂封止型半導体装置に関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a semiconductor device, and more particularly to a resin-sealed semiconductor device.

【0002】[0002]

【従来の技術】従来の半導体装置では、図2に示すよう
に、リードフレーム5のアイランド6上にAgペースト
等のマウント材7でチップ3をマウントし、チップ3上
のパッドとリードフレーム5のステッチとをAu等のボ
ンディングワイヤー4で接続した後、樹脂9で封止する
構造が主である。
2. Description of the Related Art In a conventional semiconductor device, as shown in FIG. 2, a chip 3 is mounted on an island 6 of a lead frame 5 with a mount material 7 such as Ag paste, and the pads on the chip 3 and the lead frame 5 are The main structure is to connect the stitch with a bonding wire 4 such as Au and then seal with a resin 9.

【0003】[0003]

【発明が解決しようとする課題】従来は、チップ3の下
方部分がAgペースト等のマウント材7及びリードフレ
ーム5のアイランド6であり、その周囲を樹脂9で封止
しているため、半導体装置を基板等に実装する際の熱ス
トレスにより、封止樹脂9にクラックが生じたり、チッ
プ3上のカバー膜(パッシベーション膜)にクラックを
生じ、その後の耐湿性強度が低下するという問題があっ
た。
Conventionally, since the lower portion of the chip 3 is the mount material 7 such as Ag paste and the island 6 of the lead frame 5 and the periphery thereof is sealed with the resin 9, the semiconductor device. There is a problem that the sealing resin 9 is cracked or the cover film (passivation film) on the chip 3 is cracked due to the thermal stress when mounting the substrate on a substrate or the like, and the moisture resistance strength thereafter is lowered. .

【0004】そこで、この発明は、封止樹脂にクラック
が生じ難くすることができ、耐湿性強度を向上させるこ
とができる半導体装置を提供することを目的とする。
Therefore, an object of the present invention is to provide a semiconductor device in which cracks are unlikely to occur in the encapsulating resin and the moisture resistance strength can be improved.

【0005】[0005]

【課題を解決するための手段】上記課題を解決するため
に、本発明による半導体装置は、ICチップに複数のリ
ードを形成し、該ICチップを樹脂封止した半導体装置
において、前記ICチップを金属で囲むとともにこの金
属と前記ICチップとの間を中空にしたものである。
In order to solve the above problems, a semiconductor device according to the present invention is a semiconductor device in which a plurality of leads are formed on an IC chip, and the IC chip is resin-sealed. It is surrounded by a metal and the space between the metal and the IC chip is hollow.

【0006】[0006]

【作用】本発明によれば、チップの周囲を中空構造とす
ることで、実装時等に周囲からチップに加わる熱ストレ
スによる応力がなくなり、従来に比べて封止樹脂のクラ
ックやチップ上のカバー膜のクラック等を生じ難くな
る。また、中空部の内側に金属層を設けたことにより、
外部からの水分侵入を防止し、耐湿性強度も向上するこ
ととなる。
According to the present invention, by forming a hollow structure around the chip, stress due to thermal stress applied to the chip from the surroundings at the time of mounting is eliminated, and cracks in the sealing resin and the cover on the chip are reduced compared to the conventional case. It is difficult to cause cracks in the film. Also, by providing a metal layer inside the hollow part,
It prevents moisture from entering from the outside and also improves the moisture resistance strength.

【0007】[0007]

【実施例】本発明の実施例を図1に示す。なお、図2と
同一の部分には、同一の符号を付してその説明を省略す
る。
FIG. 1 shows an embodiment of the present invention. The same parts as those in FIG. 2 are designated by the same reference numerals and the description thereof will be omitted.

【0008】図1(a)に示すように、ICチップ3の
周囲を中空部8とし、封止樹脂1の内壁にチップ3を四
方から囲むように金属層2を設けることで、外部からの
水分侵入を防止する。チップ3は、図1(b)に示すよ
うに、リードフレーム5の吊りピン部分で支える。この
ような構造とすることにより、実装時等にチップ3へ周
囲から加わる応力が従来に比べて非常に少なくなる。
As shown in FIG. 1 (a), a hollow portion 8 is formed around the IC chip 3 and a metal layer 2 is provided on the inner wall of the sealing resin 1 so as to surround the chip 3 from all sides. Prevents ingress of water. The chip 3 is supported by the hanging pin portion of the lead frame 5, as shown in FIG. With such a structure, the stress applied from the periphery to the chip 3 at the time of mounting or the like becomes much smaller than that in the conventional case.

【0009】[0009]

【発明の効果】以上説明したように本発明によれば、封
止樹脂のクラックやチップ上のカバー膜のクラック等を
生じ難くなり、耐湿性強度が向上する。
As described above, according to the present invention, cracks in the sealing resin and the cover film on the chip are less likely to occur, and the moisture resistance strength is improved.

【図面の簡単な説明】[Brief description of drawings]

【図1】本発明の一実施例による半導体装置を示す図で
あり、(a)はその正面視状態の断面図、(b)はその
側面視状態の断面図である。
1A and 1B are views showing a semiconductor device according to an embodiment of the present invention, in which FIG. 1A is a sectional view in a front view state and FIG. 1B is a sectional view in a side view state.

【図2】従来の半導体装置の正面視状態の断面図であ
る。
FIG. 2 is a sectional view of a conventional semiconductor device in a front view.

【符号の説明】[Explanation of symbols]

1 封止樹脂 2 金属層 3 ICチップ 4 ボンディングワイヤー 5 リードフレーム(リード) 6 アイランド 7 マウント材 8 中空部 1 Sealing Resin 2 Metal Layer 3 IC Chip 4 Bonding Wire 5 Lead Frame (Lead) 6 Island 7 Mount Material 8 Hollow Part

Claims (1)

【特許請求の範囲】[Claims] 【請求項1】 ICチップに複数のリードを形成し、該
ICチップを樹脂封止した半導体装置において、 前記ICチップを金属で囲むとともにこの金属と前記I
Cチップとの間を中空にしたことを特徴とする半導体装
置。
1. A semiconductor device in which a plurality of leads are formed on an IC chip, and the IC chip is resin-sealed, the IC chip is surrounded by a metal, and the metal and the I
A semiconductor device having a hollow between the C chip.
JP30946492A 1992-10-23 1992-10-23 Semiconductor device Withdrawn JPH06140525A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP30946492A JPH06140525A (en) 1992-10-23 1992-10-23 Semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP30946492A JPH06140525A (en) 1992-10-23 1992-10-23 Semiconductor device

Publications (1)

Publication Number Publication Date
JPH06140525A true JPH06140525A (en) 1994-05-20

Family

ID=17993311

Family Applications (1)

Application Number Title Priority Date Filing Date
JP30946492A Withdrawn JPH06140525A (en) 1992-10-23 1992-10-23 Semiconductor device

Country Status (1)

Country Link
JP (1) JPH06140525A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448432B1 (en) * 1997-10-28 2004-11-16 삼성전자주식회사 Mold for fabricating air-cavity plastic package to improve reliability and reduce production cost
US7192801B2 (en) 2002-06-26 2007-03-20 Sony Corporation Printed circuit board and fabrication method thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100448432B1 (en) * 1997-10-28 2004-11-16 삼성전자주식회사 Mold for fabricating air-cavity plastic package to improve reliability and reduce production cost
US7192801B2 (en) 2002-06-26 2007-03-20 Sony Corporation Printed circuit board and fabrication method thereof

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Legal Events

Date Code Title Description
A300 Withdrawal of application because of no request for examination

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20000104