JPS61111996A - 希土類ガ−ネツト単結晶体及びその製造方法 - Google Patents

希土類ガ−ネツト単結晶体及びその製造方法

Info

Publication number
JPS61111996A
JPS61111996A JP59233345A JP23334584A JPS61111996A JP S61111996 A JPS61111996 A JP S61111996A JP 59233345 A JP59233345 A JP 59233345A JP 23334584 A JP23334584 A JP 23334584A JP S61111996 A JPS61111996 A JP S61111996A
Authority
JP
Japan
Prior art keywords
crystal
rare earth
single crystal
thermal conductivity
garnet
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59233345A
Other languages
English (en)
Japanese (ja)
Other versions
JPH034518B2 (enrdf_load_stackoverflow
Inventor
Hiroshi Maeda
弘 前田
Michinori Sato
佐藤　充典
Hideo Kimura
秀夫 木村
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Materials Science
Original Assignee
National Research Institute for Metals
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Research Institute for Metals filed Critical National Research Institute for Metals
Priority to JP59233345A priority Critical patent/JPS61111996A/ja
Publication of JPS61111996A publication Critical patent/JPS61111996A/ja
Publication of JPH034518B2 publication Critical patent/JPH034518B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
    • C30B29/16—Oxides
    • C30B29/22—Complex oxides
    • C30B29/28—Complex oxides with formula A3Me5O12 wherein A is a rare earth metal and Me is Fe, Ga, Sc, Cr, Co or Al, e.g. garnets

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP59233345A 1984-11-07 1984-11-07 希土類ガ−ネツト単結晶体及びその製造方法 Granted JPS61111996A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP59233345A JPS61111996A (ja) 1984-11-07 1984-11-07 希土類ガ−ネツト単結晶体及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59233345A JPS61111996A (ja) 1984-11-07 1984-11-07 希土類ガ−ネツト単結晶体及びその製造方法

Publications (2)

Publication Number Publication Date
JPS61111996A true JPS61111996A (ja) 1986-05-30
JPH034518B2 JPH034518B2 (enrdf_load_stackoverflow) 1991-01-23

Family

ID=16953689

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59233345A Granted JPS61111996A (ja) 1984-11-07 1984-11-07 希土類ガ−ネツト単結晶体及びその製造方法

Country Status (1)

Country Link
JP (1) JPS61111996A (enrdf_load_stackoverflow)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128921A (ja) * 1985-11-26 1987-06-11 Takakuni Hashimoto 磁性体材料
JPS6481379A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPS6481378A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPS6481380A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPS6481377A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPH01152605A (ja) * 1987-12-09 1989-06-15 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62128921A (ja) * 1985-11-26 1987-06-11 Takakuni Hashimoto 磁性体材料
JPS6481379A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPS6481378A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPS6481380A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPS6481377A (en) * 1987-09-24 1989-03-27 Nec Corp Crystal for solid state laser
JPH01152605A (ja) * 1987-12-09 1989-06-15 Shin Etsu Chem Co Ltd 酸化物ガーネット単結晶

Also Published As

Publication number Publication date
JPH034518B2 (enrdf_load_stackoverflow) 1991-01-23

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Legal Events

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EXPY Cancellation because of completion of term