JPS61111990A - Device for pulling up single crystal - Google Patents
Device for pulling up single crystalInfo
- Publication number
- JPS61111990A JPS61111990A JP23117084A JP23117084A JPS61111990A JP S61111990 A JPS61111990 A JP S61111990A JP 23117084 A JP23117084 A JP 23117084A JP 23117084 A JP23117084 A JP 23117084A JP S61111990 A JPS61111990 A JP S61111990A
- Authority
- JP
- Japan
- Prior art keywords
- single crystal
- pulling
- pulling shaft
- gas
- crystal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】
（発明の属する技術分野）
本発明はチョクラルスキー法（ＣＺ法という）によって
シリコンなどの単結晶を製造する装置の改良に関するも
のである。DETAILED DESCRIPTION OF THE INVENTION (Technical field to which the invention pertains) The present invention relates to an improvement of an apparatus for manufacturing single crystals of silicon or the like by the Czochralski method (referred to as the CZ method).
（従来の技術）
従来の大形単結晶引上装置においては、シード（種結晶
）を回転させながら上下に移動可能としたシード引上軸
に、金属の棒の代りに金属線またはポールチェーン（通
称玉ぐさｉ） ）などの可撓性材料を用いて装置の高さ
を抑制しているが、このような引上装置ではシード回転
、外部振動および炉内ガスの流れなどによって、特にシ
ードが回転振れを生じ完全な単結晶の引上げが困難とな
り、その対策が強く望まれていた。なお回転振れとは簡
単にいうと横振れであって、複雑なときはシード引上軸
を中心として上から見た形が円形、欄内形、８字形また
はＸ字形など（＝なる。(Prior Art) In a conventional large single crystal pulling apparatus, a metal wire or pole chain (instead of a metal rod) is attached to the seed pulling shaft, which allows the seed (seed crystal) to move up and down while rotating. Although the height of the equipment is controlled using flexible materials such as commonly known as beads (i)), such pulling equipment is particularly prone to seed damage due to seed rotation, external vibration, and gas flow within the furnace. Rotational runout occurs, making it difficult to pull a perfect single crystal, and a countermeasure for this problem has been strongly desired. Simply put, rotational runout is lateral runout, and when it is complicated, the shape seen from above centered on the seed pulling axis is circular, columnar, 8-shaped, or X-shaped.
（発明の目的）
本発明はＣＺ法によって単結晶を製造する装置の引上軸
に、可撓性耐熱材料を用いる場合に回転振れが生じた場
合、これを直ちに減衰させることを目的としている。(Objective of the Invention) The object of the present invention is to immediately attenuate rotational runout when it occurs when a flexible heat-resistant material is used for the pulling shaft of an apparatus for producing single crystals by the CZ method.
（発明の構成と作用）
第１図は本発明を実施した単結晶引上装置の構成例を示
す断面図である。図中の１はるつぼで、内部には溶融し
た結晶材料が収容されている。なおるつぼの加熱装置は
よく知られているので図示を省いた。２は生長中の単結
晶、３はシード、４はシード以下を保持するチャック、
５は引上軸でこの場合は金属ワイヤまたはボールチェー
ン、６はシードおよび単結晶の引上げと回転を行う機構
、７はガス導入口、８は結晶収納室（チャンバ、炉）９
は結晶監視用ＴＶカメラ、１０はのぞき窓である。第２
図は引上軸にガス導入口からガスを吹付ける状態の一例
を示す第１図の断面図で、この例では引上軸５と直角な
方向にチャンバ８の外壁に対称な位置に取付けた複数の
ガス吹出しロアａを示しているが、ガス導入ロアけ１つ
または複数のいずれでもよく、ガス吹出しロアａの数は
状況によって３個以上任意に選ぶことができるが、ガス
の吹付けによって引上軸が中心にくるようにバランスを
考えて決定する。ガスには不活性ガスが使用され、さら
にガスを吹付ける部分は引上軸下方の単結晶部分とする
こともある。(Structure and operation of the invention) FIG. 1 is a cross-sectional view showing an example of the structure of a single crystal pulling apparatus embodying the invention. 1 in the figure is a crucible, inside of which a molten crystal material is stored. Note that the heating device for the crucible is well known and is therefore not shown. 2 is a growing single crystal, 3 is a seed, 4 is a chuck that holds the parts below the seed,
5 is a pulling shaft, in this case a metal wire or ball chain; 6 is a mechanism for pulling and rotating seeds and single crystals; 7 is a gas inlet; 8 is a crystal storage chamber (chamber, furnace) 9
is a TV camera for crystal monitoring, and 10 is a viewing window. Second
The figure is a cross-sectional view of Figure 1 showing an example of a state in which gas is sprayed from the gas inlet to the pulling shaft. Although a plurality of gas blowing lowers a are shown, there may be one or more gas introducing lowers, and the number of gas blowing lowers a can be arbitrarily selected from three or more depending on the situation, but depending on the gas blowing Decide by considering the balance so that the pulling axis is centered. An inert gas is used as the gas, and the part to which the gas is sprayed may be a single crystal part below the pulling axis.
さて、実際に上記のようにシード回転その他によって、
引上軸に回転振れを生じた場合には、たとえばその状態
をビデオカメラ９などで検出し、ガス導入ロアよりのガ
ス流量を調整してガス吹出し口から引上軸、または単結
晶に不活性ガスを吹付けることによって、引上軸の回転
振れを迅速に減衰させることができる。Now, actually by seed rotation etc. as above,
If rotational vibration occurs in the pulling shaft, the condition is detected using a video camera 9, for example, and the gas flow rate from the gas introduction lower is adjusted to inert the gas outlet to the pulling shaft or single crystal. By blowing gas, the rotational vibration of the pulling shaft can be quickly attenuated.
（発明の効果）
本発明の実施によって、単結晶引上用の金属線やポール
チェーンの回転振れを急速に減衰させることができるの
で、単結晶の品質が向上する。これは実用上技術的にも
経済的にも著しい効果である。(Effects of the Invention) By carrying out the present invention, it is possible to rapidly attenuate the rotational vibration of a metal wire or pole chain for pulling a single crystal, thereby improving the quality of the single crystal. This is a remarkable effect both technically and economically.
第１図は本発明を実施した単結晶引上装置の構成側断面
図、第２図は引上軸にガスを吹付ける状態の一例を示す
図である。
ｌ・−・・るつぼ、 ２・・０単結晶、 ３・・・・シ
ード、４０・・チャック、
５・・・・引上（デワイヤまたは引上げくさり、６・・
・・単結晶引上げと回転を行う機構部分、７・ａ−・ガ
ス導入口、
７ａ・・・・ガス吹出し口、
８・・・・結晶収納室、
９０・・監視カメラ、
１０−・・窓。FIG. 1 is a sectional side view of the configuration of a single crystal pulling apparatus embodying the present invention, and FIG. 2 is a diagram showing an example of a state in which gas is blown onto the pulling shaft. l... Crucible, 2... 0 single crystal, 3... Seed, 40... Chuck, 5... Pulling (dewire or pulling chain, 6...
...Mechanical part for pulling and rotating single crystal, 7.a-.Gas inlet, 7a..Gas outlet, 8..Crystal storage chamber, 90..Surveillance camera, 10..Window. .
Claims (1)
、または引上中の単結晶に、それらの軸と直角方向の３
箇以上のガス吹出口より不活性ガスを吹きつける装置を
設けて、引上単結晶の回転振れを防止するようにしたこ
とを特徴とする単結晶引上装置。The pulling axis of a single crystal pulling apparatus using a flexible material for the pulling axis, or the single crystal being pulled, is
1. A single crystal pulling apparatus, comprising: a device for blowing inert gas from at least one gas outlet to prevent rotational vibration of the pulled single crystal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23117084A JPS61111990A (en) | 1984-11-05 | 1984-11-05 | Device for pulling up single crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP23117084A JPS61111990A (en) | 1984-11-05 | 1984-11-05 | Device for pulling up single crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS61111990A true JPS61111990A (en) | 1986-05-30 |
Family
ID=16919406
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP23117084A Pending JPS61111990A (en) | 1984-11-05 | 1984-11-05 | Device for pulling up single crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS61111990A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105019018A (en) * | 2015-07-31 | 2015-11-04 | 常州市宜控自动控制系统有限公司 | Flexible shaft swing active-intervention stabilizer |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826095A (en) * | 1981-07-31 | 1983-02-16 | Toshiba Ceramics Co Ltd | Pulling apparatus for single crystal silicon |
-
1984
- 1984-11-05 JP JP23117084A patent/JPS61111990A/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5826095A (en) * | 1981-07-31 | 1983-02-16 | Toshiba Ceramics Co Ltd | Pulling apparatus for single crystal silicon |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105019018A (en) * | 2015-07-31 | 2015-11-04 | 常州市宜控自动控制系统有限公司 | Flexible shaft swing active-intervention stabilizer |
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