JPS6110999B2 - - Google Patents
Info
- Publication number
- JPS6110999B2 JPS6110999B2 JP16064476A JP16064476A JPS6110999B2 JP S6110999 B2 JPS6110999 B2 JP S6110999B2 JP 16064476 A JP16064476 A JP 16064476A JP 16064476 A JP16064476 A JP 16064476A JP S6110999 B2 JPS6110999 B2 JP S6110999B2
- Authority
- JP
- Japan
- Prior art keywords
- film
- photoconductive
- input
- resistive
- voltage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000002184 metal Substances 0.000 claims description 8
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 2
- 238000007740 vapor deposition Methods 0.000 description 2
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Landscapes
- Light Receiving Elements (AREA)
- Photo Coupler, Interrupter, Optical-To-Optical Conversion Devices (AREA)
- Adjustable Resistors (AREA)
Description
【発明の詳細な説明】
本発明は光学的電位差計や光の位置検知器とし
て用いられる光導電素子に関するもので、許容電
力の増大を目的としている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a photoconductive element used as an optical potentiometer or an optical position detector, and its purpose is to increase allowable power.
従来かかる用途の光導電素子としては、第１図
に示すように、光導電膜１の両側に抵抗膜２と金
属膜３を平行に形成し、光ビーム４の位置により
入力電圧Voに対して出力電圧Veは、Ve＝Vo（１
−Ｓ）（但しＳは光ビームの位置０Ｓ１）の
変化が得られることが知られている。 Conventionally, as shown in FIG. 1, a photoconductive element for this purpose has a resistive film 2 and a metal film 3 formed in parallel on both sides of a photoconductive film 1, and the position of the light beam 4 is adjusted to the input voltage Vo. The output voltage Ve is Ve=Vo(1
-S) (where S is the position of the light beam 0S1) is known to be obtained.
この従来の素子の実際の製造に際しては、ガラ
ス，セラミツクよりなる基板上に先ず蒸着法によ
りCdSe，CdS等の光導電膜１を形成し、次いで
その上に抵抗膜２と金属膜３を作るが、光導電膜
１は熱に弱いため、抵抗膜２は室温程度の温度下
で形成されるものでなければならず、Ni−Cr，
Sio−Cr等の蒸着により作られた抵抗膜が主とし
て使用されている。 In actual manufacturing of this conventional element, first a photoconductive film 1 of CdSe, CdS, etc. is formed on a substrate made of glass or ceramic by vapor deposition, and then a resistive film 2 and a metal film 3 are formed thereon. Since the photoconductive film 1 is sensitive to heat, the resistive film 2 must be formed at a temperature around room temperature.
A resistive film made by vapor deposition of Sio-Cr or the like is mainly used.
この素子形成はかなり大変であり最低２回のマ
スク位置合せを必要とし、抵抗膜の膜幅は500μ
ｍ、光導電膜の膜幅は100μｍ程度が量産を考え
た場合の限界である。両方の膜の膜幅は小さい
程、また膜の長さは大きい程入力抵抗は高くなる
が、膜の長さも構造上精々20mmが限界であり、量
産により製造される素子の入力抵抗は数100Ω〜
数ＫΩが普通である。 Forming this element is quite difficult and requires at least two mask alignments, and the width of the resistive film is 500 μm.
m, the film width of the photoconductive film is about 100 μm, which is the limit when considering mass production. The smaller the width of both films and the larger the length of the film, the higher the input resistance, but due to the structure, the film length is limited to 20 mm at most, and the input resistance of devices manufactured in mass production is several 100 Ω. ~
Several kilohms is normal.
この素子を現在主として用いられている6Vお
よび12Vの電源系で使用すると、入力電流は
10mA〜20mA程度となり、単位断面積当りの入
力電流は6000A／cm2程度の非常に大きな値にな
る。入力電流が大きいと発熱により光導電膜の劣
化が促進されるため、入力電流は小さくすること
が望ましく、またそのため素子印加電圧を小さく
することは電圧降下用の抵抗を必要とし、また変
化する電圧範囲を狭くするために望ましい方法と
は言えない。 When this element is used in the 6V and 12V power supply systems currently in use, the input current will be
The input current per unit cross-sectional area is approximately 10mA to 20mA, which is a very large value of approximately 6000A/cm 2 . If the input current is large, heat generation will accelerate the deterioration of the photoconductive film, so it is desirable to reduce the input current.For this reason, reducing the applied voltage to the element requires a resistor for voltage drop, and also reduces the voltage This is not a desirable method for narrowing the range.
そこで本発明は、印加電圧をそのままとして、
変化する電圧範囲もそのままの大きさに保つて、
入力抵抗を２倍にして素子入力電流を半分に減少
せしめ、許容電力を増加させた素子構成を提案す
るものである。 Therefore, the present invention maintains the applied voltage as it is,
Keeping the changing voltage range the same size,
This paper proposes an element configuration in which the input resistance is doubled, the element input current is halved, and the allowable power is increased.
第２図は本発明による光導電素子の素子構成を
示している。 FIG. 2 shows the element configuration of a photoconductive element according to the present invention.
本発明においては、光導電膜２１の両側に抵抗
膜２２と金属膜２３を平行に形成した２個の素子
Ａ，Ｂを両金属膜２３，２３が対向する配列で配
置し、両素子Ａ，Ｂの抵抗膜２２，２２は電極２
４により直列接続される。光ビーム２５は両光導
電膜２１，２１を横切つて照射され、光導電膜の
長さ方向（矢印）に０〜１の位置まで移動する。
なお、２６は抵抗膜２２，２２の電極である。 In the present invention, two elements A and B each having a resistive film 22 and a metal film 23 formed in parallel on both sides of a photoconductive film 21 are arranged in an arrangement such that both metal films 23 and 23 face each other, and both elements A, The resistive films 22, 22 of B are the electrodes 2
4 are connected in series. The light beam 25 is irradiated across both photoconductive films 21, 21 and moves to a position from 0 to 1 in the length direction (arrow) of the photoconductive films.
Note that 26 is an electrode of the resistive films 22, 22.
いま、光ビーム２５の位置をＳ（但し０Ｓ
１），入力端子Ｏ，Ｒ間の入力電圧をVi，電流Io
は矢印方向に流れるものとすると、素子Ａ，素子
Ｂの出力端子Ｐ，Ｑに発生する電圧ＶPS，ＶQS
は、
ＶPS＝Ｖｉ／２（１−Ｓ）＋Ｖｉ／２
ＶQS＝Ｖｉ／２Ｓ
となり、端子PQ間の出力電圧Veは、
Ve＝ＶPS−ＶQS＝Vi（１−Ｓ）
すなわち光ビーム２５の位置により出力電圧は
０〜Vi（入力電圧）まで変化することとにな
る。 Now, set the position of the light beam 25 to S (however, 0S
1), the input voltage between input terminals O and R is Vi, and the current Io
Assuming that flows in the direction of the arrow, the voltages V PS and V QS generated at the output terminals P and Q of element A and element B are
is V PS = Vi/2 (1-S) + Vi/2 V QS = Vi/2S, and the output voltage Ve between terminals PQ is Ve = V PS - V QS = Vi (1-S) In other words, the light beam The output voltage changes from 0 to Vi (input voltage) depending on the position of 25.
一方入力抵抗は、２つの素子Ａ，Ｂが直列に接
続されているので、各素子の入力抵抗の２倍の
値，入力電流Ioは1/2となり、最大印加電圧，許
容入力電力は増加し、目的は達成されたことにな
る。 On the other hand, since the two elements A and B are connected in series, the input resistance is twice the input resistance of each element, the input current Io is 1/2, and the maximum applied voltage and allowable input power are increased. , the purpose has been achieved.
第１図は従来の光導電素子、第２図は本発明に
よる光導電素子を示している。
第１図において、１…光導電膜、２…抵抗膜、
３…金属膜、４…光ビーム。第２図において、２
１…光導電膜、２２…抵抗膜、２３…金属膜、２
４，２６…電極、２５…光ビーム、Ｏ，Ｐ，Ｑ，
Ｒ…夫々電極端子。
FIG. 1 shows a conventional photoconductive element, and FIG. 2 shows a photoconductive element according to the present invention. In FIG. 1, 1... photoconductive film, 2... resistive film,
3...Metal film, 4...Light beam. In Figure 2, 2
1... Photoconductive film, 22... Resistive film, 23... Metal film, 2
4, 26... Electrode, 25... Light beam, O, P, Q,
R...Each electrode terminal.
Claims (1)
成した２組の素子の、該抵抗膜を直列接続して光
は両素子の光導電膜に同時照射し、出力を夫々の
金属膜から得るようにしたことを特徴とする光導
電素子。1. Two sets of elements in which a resistive film and a metal film are formed in parallel on both sides of a photoconductive film, the resistive films are connected in series, light is irradiated to the photoconductive film of both elements simultaneously, and the output is transmitted to each metal film. A photoconductive element characterized in that it is obtained from.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064476A JPS5384695A (en) | 1976-12-29 | 1976-12-29 | Photo conductive element |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP16064476A JPS5384695A (en) | 1976-12-29 | 1976-12-29 | Photo conductive element |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5384695A JPS5384695A (en) | 1978-07-26 |
| JPS6110999B2 true JPS6110999B2 (en) | 1986-04-01 |
Family
ID=15719380
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP16064476A Granted JPS5384695A (en) | 1976-12-29 | 1976-12-29 | Photo conductive element |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5384695A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346680B2 (en) * | 1988-03-03 | 1991-07-16 | Yoshio Kinoshita | |
| JPH0350120B2 (en) * | 1988-06-02 | 1991-07-31 | Yoshio Kinoshita |
-
1976
- 1976-12-29 JP JP16064476A patent/JPS5384695A/en active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0346680B2 (en) * | 1988-03-03 | 1991-07-16 | Yoshio Kinoshita | |
| JPH0350120B2 (en) * | 1988-06-02 | 1991-07-31 | Yoshio Kinoshita |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5384695A (en) | 1978-07-26 |
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