JPS6110983B2 - - Google Patents
Info
- Publication number
- JPS6110983B2 JPS6110983B2 JP52129389A JP12938977A JPS6110983B2 JP S6110983 B2 JPS6110983 B2 JP S6110983B2 JP 52129389 A JP52129389 A JP 52129389A JP 12938977 A JP12938977 A JP 12938977A JP S6110983 B2 JPS6110983 B2 JP S6110983B2
- Authority
- JP
- Japan
- Prior art keywords
- lead frame
- metal
- semiconductor chip
- thin metal
- semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 229910052751 metal Inorganic materials 0.000 claims description 31
- 239000002184 metal Substances 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 27
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- 239000000919 ceramic Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- -1 silver Chemical class 0.000 description 1
- 239000007779 soft material Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/484—Connecting portions
- H01L2224/4847—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond
- H01L2224/48472—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a wedge bond the other connecting portion not on the bonding area also being a wedge bond, i.e. wedge-to-wedge
Landscapes
- Lead Frames For Integrated Circuits (AREA)
Description
【発明の詳細な説明】
本発明はリードフレームの半導体チツプを搭載
する面と反対側の面に熱伝導性の優れた異種金属
を厚く接着することにより熱抵抗を小さくした半
導体装置に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor device in which thermal resistance is reduced by thickly bonding a dissimilar metal with excellent thermal conductivity to the surface of a lead frame opposite to the surface on which a semiconductor chip is mounted. .
一般に、半導体装置の電力消費による温度上昇
は半導体素子の特性上、信頼性上の問題を引き起
こす。特に、樹脂封止型半導体装置の熱抵抗はセ
ラミツク容器あるいは金属容器に組み込まれた半
導体装置の熱抵抗に比較しかなり高い為、大きな
電力を消費する樹脂封止型半導体装置では過大な
温度上昇により特性上、信頼性上の問題を引き起
こす場合があつた。その為、従来はリードフレー
ムを使用する半導体装置においては、半導体素子
の消費電力により発した熱をリードフレームを介
して放散させるように、内部リードの半導体チツ
プを搭載した面にリードフレームの素材よりも熱
伝導性の優れている銀等の異種金属を接着するこ
とにより半導体装置の熱抵抗を下げる方法が用い
られていた。 Generally, a temperature increase due to power consumption of a semiconductor device causes reliability problems due to the characteristics of the semiconductor element. In particular, the thermal resistance of resin-sealed semiconductor devices is considerably higher than that of semiconductor devices built into ceramic or metal containers, so resin-sealed semiconductor devices that consume large amounts of power may suffer from excessive temperature rise. Due to its characteristics, reliability problems could occur in some cases. For this reason, conventionally in semiconductor devices that use lead frames, the material of the lead frame is placed on the surface of the internal leads on which the semiconductor chip is mounted, so that the heat generated by the power consumption of the semiconductor element is dissipated through the lead frame. A method has also been used to lower the thermal resistance of semiconductor devices by bonding dissimilar metals such as silver, which have excellent thermal conductivity.
第１図は従来のリードフレームの中央部近傍の
断面図である。 FIG. 1 is a sectional view of the vicinity of the center of a conventional lead frame.
リードフレームのアイランド部１上に半導体チ
ツプ２が搭載され、半導体チツプ２と内部リード
３とは金属細線４で接続される。金属細線４が接
続される側の内部リード表面には熱伝導の良好な
金属、例えば銀の層５が厚く形成され、半導体チ
ツプ２に発生する熱の一部を金属細線４を通して
内部リードに導き、熱抵抗を下げるようにしてい
た。しかし、金属層５が銀のように柔らかい材質
である場合、熱圧着あるいは超音波圧着等により
金属細線４を内部リードに接続する際の圧力が前
記金属層５に吸収されてしまい金属細線４と内部
リードとの接続が不完全なものになるという欠点
があつた。 A semiconductor chip 2 is mounted on an island portion 1 of a lead frame, and the semiconductor chip 2 and internal leads 3 are connected with thin metal wires 4. A thick layer 5 of a metal with good thermal conductivity, such as silver, is formed on the inner lead surface on the side to which the thin metal wire 4 is connected, and a part of the heat generated in the semiconductor chip 2 is guided to the inner lead through the thin metal wire 4. , to lower thermal resistance. However, when the metal layer 5 is made of a soft material such as silver, the pressure when connecting the thin metal wire 4 to the internal lead by thermocompression bonding or ultrasonic pressure bonding is absorbed by the metal layer 5, and the thin metal wire 4 There was a drawback that the connection with the internal lead was incomplete.
本発明は、上述した欠点を除去し、金属細線と
の接続が良く、かつ熱放散性の良好なリードフレ
ームを使用した半導体装置を提供するものであ
る。 The present invention eliminates the above-mentioned drawbacks and provides a semiconductor device using a lead frame that has good connection with thin metal wires and good heat dissipation.
本発明は、リードフレームに半導体チツプを搭
載し、該半導体チツプとリードフレームとを金属
細線で接続する半導体装置において、リードフレ
ームの半導体チツプを搭載する面と反対側の面の
一部もしくは全部に熱伝導の良好な金属を設けた
ことを特徴とする。 The present invention relates to a semiconductor device in which a semiconductor chip is mounted on a lead frame and the semiconductor chip and the lead frame are connected by a thin metal wire. It is characterized by being made of metal with good heat conduction.
本発明を実施例により説明する。 The present invention will be explained by examples.
第２図は本発明にかかるリードフレームの中央
部近傍の断面図である。 FIG. 2 is a sectional view of the vicinity of the center of the lead frame according to the present invention.
図において、１１はリードフレームのアイラン
ド部、１２は半導体チツプ、１３は内部リード、
１４は金属細線、１５は金属細線とのボンデイン
グ性の良好な金属の層、１６は熱伝導の良好な金
属の層である。金属層１５は通常の厚さとし、金
属層１６は通常よりも厚くする。 In the figure, 11 is an island part of the lead frame, 12 is a semiconductor chip, 13 is an internal lead,
14 is a metal thin wire, 15 is a metal layer with good bonding properties with the metal thin wire, and 16 is a metal layer with good heat conduction. The metal layer 15 is made to have a normal thickness, and the metal layer 16 is made thicker than usual.
このような構造の半導体装置にすれば、金属細
線とリードフレームとの接続部に接着された金属
細線接続用金属が厚い為に起る両者間の不完全な
接続を解消し、かつ半導体素子の発した熱を厚く
接着された異種金属１６により効率よく放散させ
ることができ熱抵抗を大幅に改善することができ
る。 A semiconductor device having such a structure eliminates incomplete connections between the thin metal wires and the lead frame due to the thickness of the thin metal wire connection metal bonded to the connection portion of the lead frame, and also eliminates the incomplete connection between the thin metal wires and the lead frame. The generated heat can be efficiently dissipated by the thickly bonded dissimilar metal 16, and the thermal resistance can be greatly improved.
第１図は従来の半導体装置におけるリードフレ
ームの中央部近傍の断面図、第２図は本発明にか
かるリードフレームの中央部近傍の断面図であ
る。
１，１１……アイランド部、２，１２……半導
体チツプ、３，１３……内部リード、４，１４…
…金属細線、５，１５……金属細線接続用金属、
１６……熱伝導の良好な金属。
FIG. 1 is a sectional view of the vicinity of the center of a lead frame in a conventional semiconductor device, and FIG. 2 is a sectional view of the vicinity of the center of a lead frame according to the present invention. 1, 11... Island portion, 2, 12... Semiconductor chip, 3, 13... Internal lead, 4, 14...
...Thin metal wire, 5,15...Metal for connecting thin metal wire,
16...Metal with good thermal conductivity.
Claims (1)
半導体チツプとリードフレームとを金属細線で接
続する半導体装置において、リードフレームの半
導体チツプを搭載する面と反対側の面の一部もし
くは全部に熱伝導の良好な金属を設けたことを特
徴とする半導体装置。1. In a semiconductor device in which a semiconductor chip is mounted on a lead frame and the semiconductor chip and the lead frame are connected by a thin metal wire, a part or all of the surface of the lead frame opposite to the surface on which the semiconductor chip is mounted is provided with heat conduction. A semiconductor device characterized by being provided with a good metal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12938977A JPS5462780A (en) | 1977-10-27 | 1977-10-27 | Semiconductor device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP12938977A JPS5462780A (en) | 1977-10-27 | 1977-10-27 | Semiconductor device |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS5462780A JPS5462780A (en) | 1979-05-21 |
| JPS6110983B2 true JPS6110983B2 (en) | 1986-04-01 |
Family
ID=15008360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP12938977A Granted JPS5462780A (en) | 1977-10-27 | 1977-10-27 | Semiconductor device |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS5462780A (en) |
-
1977
- 1977-10-27 JP JP12938977A patent/JPS5462780A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| JPS5462780A (en) | 1979-05-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US4620215A (en) | Integrated circuit packaging systems with double surface heat dissipation | |
| JP2569939B2 (en) | Resin-sealed semiconductor device | |
| JPH08116016A (en) | Lead frame and semiconductor device | |
| JPH0732215B2 (en) | Semiconductor device | |
| JPS61166051A (en) | Resin seal type semiconductor device | |
| JPH02130865A (en) | Flag-less semiconductor package | |
| JPS60116239U (en) | Power MOSFET mounting structure | |
| JPS60137042A (en) | Resin-sealed semiconductor device | |
| JP2905609B2 (en) | Resin-sealed semiconductor device | |
| JPS60137041A (en) | Resin-sealed semiconductor device | |
| JP2908350B2 (en) | Semiconductor device | |
| JPH04236434A (en) | Semiconductor device and manufacture thereof | |
| JPS6110983B2 (en) | ||
| JPH0329307B2 (en) | ||
| JP2000150756A (en) | Resin-sealed semiconductor deive and lead frame | |
| JPS5946421B2 (en) | Lead frame for semiconductor devices | |
| JPH0476504B2 (en) | ||
| JPH0625004Y2 (en) | Integrated circuit | |
| JPH04168753A (en) | Semiconductor device | |
| JPH0333068Y2 (en) | ||
| JPS6138193Y2 (en) | ||
| JPS6057655A (en) | Semiconductor device | |
| JPH0778918A (en) | Semiconductor device | |
| JPS59134857A (en) | Semiconductor device | |
| JPH04196471A (en) | Semiconductor device |