JPS61108189A - Semiconductor laser device - Google Patents

Semiconductor laser device

Info

Publication number
JPS61108189A
JPS61108189A JP23162184A JP23162184A JPS61108189A JP S61108189 A JPS61108189 A JP S61108189A JP 23162184 A JP23162184 A JP 23162184A JP 23162184 A JP23162184 A JP 23162184A JP S61108189 A JPS61108189 A JP S61108189A
Authority
JP
Japan
Prior art keywords
semiconductor laser
cap
lens
laser chip
laser device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP23162184A
Other languages
Japanese (ja)
Inventor
Shigeki Horiuchi
堀内 茂樹
Toshio Sogo
十河 敏雄
Saburo Takamiya
高宮 三郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Electric Corp
Original Assignee
Mitsubishi Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Electric Corp filed Critical Mitsubishi Electric Corp
Priority to JP23162184A priority Critical patent/JPS61108189A/en
Publication of JPS61108189A publication Critical patent/JPS61108189A/en
Pending legal-status Critical Current

Links

Abstract

PURPOSE:To enable a lens and a semiconductor chip to be aligned with high accuracy, by providing a cap having side walls which have flexibility and contraction/expansion properties such that it can be deformed only under power exceeding a predetermined value. CONSTITUTION:Side walls 3a of a cap 3' for airtightly sealing a laser chip 2 mounted on a stem 1 is composed of metallic bellows 7. The metallic bellows 7 having flexibility and contraction and expansion properties enables the relative position between a lens 6 and the laser chip 2 to be adjusted in a certain extent even after the cap 3' is welded to the steam 1. Consequently, the bulk productivity is improved. Further, the side walls composed of metallic bellows ensure the good hermetic properties and resistance to environment.

Description

【発明の詳細な説明】 〔産業上の利用分野〕 この発明は半導体レーザ装置に係わり、特に半導体レー
ザチップの気密封止構造lこ関するものである。
DETAILED DESCRIPTION OF THE INVENTION [Industrial Application Field] The present invention relates to a semiconductor laser device, and particularly to a hermetically sealed structure for a semiconductor laser chip.

〔従来の技術〕[Conventional technology]

第2図は従来から実用lこ供されている半導体レーザ装
置を示す断面図である。同図1こおいて、1はステム、
2はこのステム1上にマウントされている半導体レーザ
チップ、3はステム1上Iこ溶接固定されているキャッ
プ、3aはその側壁部、4はキャップ3の側壁部3aに
封着されている無反射コート付のガラス板で出射光を取
り出す光学窓、5a+5bは半導体レーザチップ2の電
極端子であり、半導体レーザチップ2はステム1と光学
窓4付のキャップ3とで気密封止されており、信頼性に
優れた構造となっている。
FIG. 2 is a sectional view showing a semiconductor laser device that has been in practical use. In Figure 1, 1 is the stem;
2 is a semiconductor laser chip mounted on the stem 1, 3 is a cap welded and fixed on the stem 1, 3a is a side wall thereof, and 4 is a blank sealed to the side wall 3a of the cap 3. Optical windows 5a and 5b are electrode terminals of the semiconductor laser chip 2, and the semiconductor laser chip 2 is hermetically sealed with a stem 1 and a cap 3 with an optical window 4. It has a highly reliable structure.

次に、この半導体レーザ装置の動作について説明する。Next, the operation of this semiconductor laser device will be explained.

同図1こおいて、ステム1に設けられている電極端子5
a、5bを通して半導体レーザチップ2に電流を流すと
、レーザ発振が起こり、この半導体レーザチップ2の端
面から光が出射され、この光は同図1こ矢印入方向で示
すように光学窓4を通して外部に取り出され利用される
In FIG. 1, an electrode terminal 5 provided on the stem 1
When current is passed through the semiconductor laser chip 2 through a and 5b, laser oscillation occurs, and light is emitted from the end face of the semiconductor laser chip 2. This light passes through the optical window 4 as shown in the direction of the arrow in FIG. It is taken out and used outside.

しかしながら、この光学窓4から取り出される出射光は
、一般lこ指向性が極めて悪く、半値全角が片側では3
0〜40度lこ達する。そのため、はとんどの応用分野
では、光学窓4の上に図示しないさらIこ別付けのレン
ズを高精度lこ配置して出射光を集光あるいは平行光束
させて利用している。
However, the light emitted from the optical window 4 generally has extremely poor directivity, and the full width at half maximum is 3 on one side.
It reaches 0 to 40 degrees. Therefore, in most applied fields, a separate lens (not shown) is placed on the optical window 4 with high precision to condense or collimate the emitted light.

また、このような問題を改善するものとしては、同図1
こ示すガラス板の光学窓4の代りに第3図tこ示すよう
Iこ無反射コート付のレンズ6を設け、このレンズ6全
通して出射光を取り出す構造が考えられるが、このよう
な構成によると、高価な無反射コート付の光学窓4(第
2図参照)が省略できるとともlこ、応用上必要なレン
ズ6も一体に組み込まれており、極めて有利な構造とな
る。
In addition, as a method to improve such problems, Figure 1
Instead of the glass plate optical window 4 shown in this figure, a structure can be considered in which a lens 6 with a non-reflection coating is provided as shown in FIG. According to , the optical window 4 with an expensive anti-reflection coating (see FIG. 2) can be omitted, and the lens 6 necessary for the application is also integrated, resulting in an extremely advantageous structure.

〔発明が解決しようとする問題点〕[Problem that the invention seeks to solve]

しかしながら、このような構成によると、レンズ6と半
導体レーザチップ2の出射光の出力される微小な発光部
分との位置合わせに極めて商い稍贋が要求されることか
ら、第2図の構成で用いられているような通常のキャッ
プ3の溶接装置が使用できず、何等かの特別な高精度位
置合わせ機構を要する溶接装置が必要となるとともIこ
、位置合わせ操作のためlこ通常の量産性が損なわれて
しまう。また、高精度の位置合わせが溶接前まで可能で
あっても溶接時lこは必らず溶接される部分の沈み込み
等が僅かであるが発生するので、多少の位置ずれが避け
られず、問題となっていた。
However, with such a configuration, extremely difficult alignment is required between the lens 6 and the tiny light-emitting portion from which the emitted light of the semiconductor laser chip 2 is output. Ordinary welding equipment for caps 3, such as the one shown in Figure 3, cannot be used, and a welding equipment that requires some kind of special high-precision positioning mechanism is required. will be damaged. In addition, even if highly accurate positioning is possible before welding, during welding, there will always be slight sinking of the welded part, so some misalignment is unavoidable. It was a problem.

したがって本発明は、前述した従来の問題に鑑みてなさ
れたものであり、その目的とするところは、高価な無反
射コート付ガラス板の光学窓を用いることなく、量産性
および製造歩留りを向上させ低コストで実現することが
できるレンズ組み込み形半導体レーザ装置を提供するこ
とにある。
Therefore, the present invention has been made in view of the above-mentioned conventional problems, and its purpose is to improve mass productivity and manufacturing yield without using an expensive optical window made of a glass plate with an anti-reflection coating. An object of the present invention is to provide a lens-embedded semiconductor laser device that can be realized at low cost.

〔問題点を解決するだめの手段〕[Failure to solve the problem]

このような目的を達成するために本発明は、キャップの
側壁部を所定以上の力を加えたときのみに変形する筒状
体とし、可撓性かつ伸縮性を持たせて構成するものであ
る。
In order to achieve such an object, the present invention provides a cylindrical body that deforms only when a predetermined force or more is applied to the side wall of the cap, making it flexible and stretchable. .

〔作用〕[Effect]

このような構成によれば、レンズと半導体レーザチップ
との相対的な位置決めを可変調整することができるので
、レンズと半導体レーザチップの発光部分との高精度の
位置合わせが可能となる。
According to such a configuration, the relative positioning of the lens and the semiconductor laser chip can be variably adjusted, so that highly accurate positioning of the lens and the light emitting portion of the semiconductor laser chip is possible.

〔実施例〕〔Example〕

以下、図面を用いて本発明の実施例を詳細lこ説明する
Embodiments of the present invention will be described in detail below with reference to the drawings.

第1図は本発明lこよる半導体レーザ装置の一実施例を
示す断面図であり、前述の図と同一部分は同一符号を付
す。同図において、ステム1#こマウントされた半導体
レーザチップ2を気密封止するキャップ3′は、そのキ
ャップ側壁部321こは所定以上の力を加えたときのみ
に変形する筒状体として金属ベローズ7が一体的に設け
られて構成されている。
FIG. 1 is a sectional view showing an embodiment of a semiconductor laser device according to the present invention, and the same parts as those in the previous figures are given the same reference numerals. In the figure, a cap 3' that hermetically seals the semiconductor laser chip 2 mounted on the stem 1# has a metal bellows as a cylindrical body that deforms only when a predetermined force or more is applied to the cap side wall 321. 7 are integrally provided.

このような構成lこよれば、キャップ3′の側壁部3a
を、金属ベローズ6で構成したことlこエリ、金属ベロ
ーズ6は可撓性かつ伸縮性を有しているので、キャップ
3′のステム1への溶接固定後もレンズ6と半導体レー
ザチップ2との相対的な位置をある範囲で変更調整する
ことができる。そのため、第3図で説明したようlこ従
来の半導体レーザ装置で必要とされていたレンズ6と半
導体レーザチップ2とのキャップ溶接時の極めて高精度
な位置合わせの必要がなくなり、量産性σこ優れた通常
のキャップ溶接装置の使用が可能となるとともlこ、溶
接時の僅かな位置ずれに伴なう製造歩留りの低下も避け
ることができる。また、キャップ3′の側壁部3aを金
属ベローズ7で構成したことlこより、気密性および耐
環境性が向上し、さらに信頼性の高い高精度の相対的な
位置合わせ設定が可能となる。
According to such a configuration, the side wall portion 3a of the cap 3'
The metal bellows 6 is flexible and stretchable, so even after the cap 3' is fixed to the stem 1 by welding, the lens 6 and the semiconductor laser chip 2 remain connected. The relative positions of can be adjusted within a certain range. Therefore, as explained in FIG. 3, there is no need for extremely high-precision positioning during cap welding between the lens 6 and the semiconductor laser chip 2, which was required in the conventional semiconductor laser device. Not only is it possible to use a superior conventional cap welding device, it is also possible to avoid a decrease in manufacturing yield due to slight positional deviation during welding. Further, since the side wall portion 3a of the cap 3' is formed of the metal bellows 7, airtightness and environmental resistance are improved, and relative positioning with high reliability and high accuracy is possible.

なお、前述した実施例1こおいては、キャップの側壁部
に、所定以上の力を加えたときのみに変形する筒状体と
して金属ぺ目−ズを設けた場合について説明したが、本
発明はこれに限定されるものではなく、各種のゴムある
いはプラスチック材料からなるベローズで構成しても前
述と同等の効果が得られることは勿論である。
In the above-described first embodiment, a case was explained in which a metal peg was provided as a cylindrical body that deformed only when a predetermined force or more was applied to the side wall of the cap, but the present invention It goes without saying that the bellows is not limited to this, and the same effect as described above can be obtained even if the bellows is made of various rubber or plastic materials.

〔発明の効果〕〔Effect of the invention〕

以上説明したように本発明lこよれば、キャップの側壁
部を所定以上の力を加えたときのみに変形rする筒状体
構造としたことにより、高価な無反射コート付ガラス板
の光学窓を省略したレンズ組込形半導体レーザ装置を量
産性および製造歩留りを損なうことなく、低価格で得ら
れるという極めて優れた効果を有する。
As explained above, according to the present invention, the side wall portion of the cap has a cylindrical structure that deforms only when a force exceeding a predetermined value is applied, so that an optical window made of an expensive anti-reflection coated glass plate can be used. The present invention has an extremely excellent effect in that a lens-embedded semiconductor laser device omitting the above can be obtained at a low cost without impairing mass productivity or manufacturing yield.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明lこよる半導体レーザ装置の一実施例を
示す断面図、第2図および第3図は従来の半導体レーザ
装置の一例を示す断面図である。 1・・・・ステム、2・・・・半導体レーザチップ、3
′ ・・・・キャップ、3a・・・・側壁部、5a、5
bφ・・・電極端子、6・・・・レンズ、7・・・・金
属ベローズ。
FIG. 1 is a sectional view showing an embodiment of a semiconductor laser device according to the present invention, and FIGS. 2 and 3 are sectional views showing an example of a conventional semiconductor laser device. 1... Stem, 2... Semiconductor laser chip, 3
'...Cap, 3a...Side wall part, 5a, 5
bφ...electrode terminal, 6...lens, 7...metal bellows.

Claims (2)

【特許請求の範囲】[Claims] (1)ステム上に搭載した半導体レーザチップを、所定
以上の力を加えたときのみに変形する筒状体を側壁部に
有しかつ光学窓としてレンズを有するキャップで気密封
止することを特徴とした半導体レーザ装置。
(1) The semiconductor laser chip mounted on the stem is hermetically sealed with a cap that has a cylindrical body on the side wall that deforms only when a predetermined force or more is applied, and has a lens as an optical window. Semiconductor laser device.
(2)前記筒状体を金属ベローズとしたことを特徴とす
る特許請求の範囲第1項記載の半導体レーザ装置。
(2) The semiconductor laser device according to claim 1, wherein the cylindrical body is a metal bellows.
JP23162184A 1984-10-31 1984-10-31 Semiconductor laser device Pending JPS61108189A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP23162184A JPS61108189A (en) 1984-10-31 1984-10-31 Semiconductor laser device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP23162184A JPS61108189A (en) 1984-10-31 1984-10-31 Semiconductor laser device

Publications (1)

Publication Number Publication Date
JPS61108189A true JPS61108189A (en) 1986-05-26

Family

ID=16926375

Family Applications (1)

Application Number Title Priority Date Filing Date
JP23162184A Pending JPS61108189A (en) 1984-10-31 1984-10-31 Semiconductor laser device

Country Status (1)

Country Link
JP (1) JPS61108189A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135235A (en) * 2007-11-29 2009-06-18 Sharp Corp Cap member and semiconductor device using the same
JP2014157873A (en) * 2013-02-14 2014-08-28 Ricoh Co Ltd Lid for optical package, optical package, optical unit, multi-beam scanner, and image forming apparatus

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009135235A (en) * 2007-11-29 2009-06-18 Sharp Corp Cap member and semiconductor device using the same
US8253240B2 (en) 2007-11-29 2012-08-28 Sharp Kabushiki Kaisha Cap member and semiconductor device employing same
JP2014157873A (en) * 2013-02-14 2014-08-28 Ricoh Co Ltd Lid for optical package, optical package, optical unit, multi-beam scanner, and image forming apparatus

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