JPS59101882A - Photo semiconductor device - Google Patents

Photo semiconductor device

Info

Publication number
JPS59101882A
JPS59101882A JP57212354A JP21235482A JPS59101882A JP S59101882 A JPS59101882 A JP S59101882A JP 57212354 A JP57212354 A JP 57212354A JP 21235482 A JP21235482 A JP 21235482A JP S59101882 A JPS59101882 A JP S59101882A
Authority
JP
Japan
Prior art keywords
cap
optical semiconductor
stem
fitting
semiconductor device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP57212354A
Other languages
Japanese (ja)
Inventor
Shozo Noguchi
野口　召三
Shoji Hashizume
昭二 橋詰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP57212354A priority Critical patent/JPS59101882A/en
Publication of JPS59101882A publication Critical patent/JPS59101882A/en
Pending legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02325—Optical elements or arrangements associated with the device the optical elements not being integrated nor being directly associated with the device
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Light Receiving Elements (AREA)
  • Led Device Packages (AREA)

Abstract

PURPOSE:To obtain a photo semiconductor device excellent in the efficiency of coupling with an optical fiber and in coupling tolerance by fixing a cap on a stem after forming projections and recesses for fitting on the mounting surface of each of the stem and the cap and then fitting both. CONSTITUTION:The mounting recess for positioning at the time of fitting the photo semiconductor element 204 and the fitting recess 212 for positioning at the time of mounting the cap 208 are provided on a stem base 201. At the center, a spherical lens 206 made of glass, sapphire, or rubby, etc. is sealed in a wall member 211 with a glass 210, and the cap 208 with the fitting projection 213 for positioning at the time of mounting on the steam provided on the wall member 211 is fitted by the fitting projection 213 and the fitting recess 212 of the stem base 201, which is thereafter fixed on the steam base 201 by resistance welding, etc., so that the inside of the device is made hermetic.

Description

【発明の詳細な説明】 本発明は光半導体装置の構造に関し、特に光を集光、あ
るいは平行光線に変換する為のレンズが取付けられてい
る光半導体装置の構造に関するものである。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to the structure of an optical semiconductor device, and more particularly to the structure of an optical semiconductor device equipped with a lens for condensing light or converting light into parallel light beams.

一般に光半導体装置に於ては、光半導体素子より発光し
た光をその伝送媒体となる光フアイバ一端面に効率よく
集め、光ファイバーの結合効率を大きくとること、なら
びに光ファイバーとの結合の際の結合位置調整の許容範
囲（以下トレランスと記す）を太きくシ、調整を容易に
することが重要となる。In general, in optical semiconductor devices, it is important to efficiently collect the light emitted from the optical semiconductor element onto one end face of the optical fiber that serves as the transmission medium, to increase the coupling efficiency of the optical fiber, and to adjust the coupling position when coupling with the optical fiber. It is important to widen the allowable range of adjustment (hereinafter referred to as tolerance) to facilitate adjustment.

そこで光ファイバーとの結合効率を太きくし、結合のト
レランスを大きくする為、光半導体素子よシ発光した光
を集光したり、実質的に平行光線にかえ、元ファイバ一
端面に入光させる目的で、光軸に垂直な面で屈折率に勾
配をもたせた柱状レンズとか球レンズが光半導体装置に
取付けられている。Therefore, in order to increase the coupling efficiency with the optical fiber and increase the coupling tolerance, it is possible to condense the light emitted from the optical semiconductor element, or to convert it into a substantially parallel light beam and direct it to one end face of the original fiber. A columnar lens or a spherical lens whose refractive index has a gradient in a plane perpendicular to the optical axis is attached to an optical semiconductor device.

従来のこれらレンズの取付けられた光半導体装置として
は、光半導体素子をステムに固定した後例えば中央部に
ガラスあるいはサファイア等よりなる光透過性の窓部を
有し、該窓部にレンズを樹脂等で固定してなるキャップ
を封止した構造、あるいは、中央部にガラスあるいはサ
ファイア等よりなる光透過性の窓部を有するキャップを
封止した後、レンズを光半導体装置外部に取付けた構造
が多く彩用されている。Conventional optical semiconductor devices equipped with these lenses have a light-transmissive window made of glass or sapphire in the center after the optical semiconductor element is fixed to the stem, and the lens is attached to the resin in the window. or a structure in which a lens is attached to the outside of the optical semiconductor device after sealing a cap with a light-transmitting window made of glass or sapphire in the center. It is often colored.

このような従来の光半導体装置に於いては、光ファイバ
ーとの結合効率及び結合のトレランスを大きくする為に
は、光半導体素子の発光部とレンズとの光軸を精度よく
合わせることが必要で、ステムにキャップを取付ける際
光半導体素子とレンズの位置調整を行なった後、キャッ
プをステムに固定しなければならず、この位置調整及び
キャップの固定作業が困難で手間がかかるといった欠点
および光半導体素子とレンズを最適位置に調整してもキ
ャップを固定する際に新たに位置ずれを生じ結合効率が
低下し、結合のトレランスが小さくなるという欠点を有
している。In such conventional optical semiconductor devices, in order to increase coupling efficiency and coupling tolerance with optical fibers, it is necessary to precisely align the optical axes of the light emitting part of the optical semiconductor element and the lens. When attaching the cap to the stem, the cap must be fixed to the stem after adjusting the position of the optical semiconductor element and the lens, and this position adjustment and fixing the cap are difficult and time-consuming. Even if the lens is adjusted to the optimum position, a new positional shift occurs when the cap is fixed, reducing coupling efficiency and coupling tolerance.

本発明は従来の光半導体装置のかかる欠点を除去し、光
ファイバーとの結合効率及び結合のトレランスに優れた
ブＣ半導体装置を容易に提供することを目的とするもの
である。It is an object of the present invention to eliminate such drawbacks of conventional optical semiconductor devices and to easily provide a PC semiconductor device that has excellent coupling efficiency and coupling tolerance with optical fibers.

即ち本発明は、ステムのキャップを取付ける面に凹部／
凸部を設け、かつキャップのステムに取付けられる面に
凸部／凹部を設け、キャップをステムＶぽ全量ることの
できる構造を有していることを特徴とするものである。That is, the present invention has a concave portion/
It is characterized by having a structure in which a convex portion is provided, and a convex portion/concave portion is provided on the surface of the cap that is attached to the stem, so that the cap can be fully mounted on the stem V.

このような本発明の光半導体装置に於いては、ステムの
光半導体素子のマウント位置に対し、凹部／凸部を精度
よく形成し、キャップのレンズ取付は位置に対し凸部／
凹部を精度よく形成し、両者を嵌合させることによシス
テムとキャップ、即ち、ステム上に固定された光半導体
素子とキャップに取付けられたレンズとを精度よく、位
置決めすることができる。また、このような本発明の光
半導体装置に於いては、キャップをステムに固定する際
、キャップは予めステムに嵌合されている為、新たな位
置ずれを生じるのを防ぐことができる。この為、光ファ
イバとの結合効率及び結合のトレラン哀に優れた光半導
体装置を容易に提供することが可能となる。In such an optical semiconductor device of the present invention, the concave/convex portions are formed with high accuracy relative to the mounting position of the optical semiconductor element on the stem, and the lens mounting of the cap is formed with the convex/convex portions relative to the position.
By accurately forming the recess and fitting them together, the system and the cap, that is, the optical semiconductor element fixed on the stem and the lens attached to the cap, can be positioned accurately. Further, in such an optical semiconductor device of the present invention, when the cap is fixed to the stem, since the cap is fitted to the stem in advance, new positional displacement can be prevented. Therefore, it is possible to easily provide an optical semiconductor device with excellent coupling efficiency and coupling tolerance with an optical fiber.

次に本発明を更に詳細に説明する為、従来の光半導体装
置ならびに本発明の光半導体装置の一実施例につき図面
を参照して説明する。Next, in order to explain the present invention in more detail, a conventional optical semiconductor device and an embodiment of the optical semiconductor device of the present invention will be described with reference to the drawings.

第１図は、従来の光半導体装置の縦断面図であシ、第２
図は本発明の光半導体装置の一実施例を示す縦断面図第
３図は、第２図の実施例で、第２図の実施例で、第２図
断面と直交する位置に於ける縦断面図である。FIG. 1 is a vertical cross-sectional view of a conventional optical semiconductor device.
FIG. 3 is a longitudinal cross-sectional view showing an embodiment of the optical semiconductor device of the present invention. FIG. 3 shows the embodiment of FIG. It is a front view.

第１図に於”〔て、１００はステムで、ステムベース１
０１に外部導出リード１０２がガラス１０３で気蟹封着
されている。光半導体素子１０４はステムベース１０１
の中央に同定され光半導体素子１０４の電極は外部導出
リード１０２と金属細線１０５で電気的に接続される。In Figure 1, 100 is the stem and stem base 1
01, an external lead 102 is sealed with a glass 103. The optical semiconductor element 104 is a stem base 101
The electrode of the optical semiconductor element 104 is electrically connected to the external lead 102 by a thin metal wire 105.

しかる後中央に光透過性の窓部材１０９が壁部材用に気
密封止され、かつ窓部材１０９の中央部に例えばガラス
、サファイア、あるいはルビー等よりなる球状レンズ１
０６が樹脂１０７等で固定されてなるキャップ１０８が
ステムベース１０１上に装置内部が気密になるよう取付
けられている。このような従来の光半導体装置に於いて
は光半導体素子１０４０発光部と球レンズ１０６の光軸
を精度よく合わせる為にステムベース１０１にキャップ
１０８を取付ける際両者の位置調整を行なった後、キャ
ップ１０８をステムベース１０１に固定しなければなら
ずこの位置調整及び固定作業が困難で手間がかかるとい
う欠点を有している。更にこのような従来の光半導体装
置に於いては、光半導体素子１０俵球レンズ１０６を最
適位置に調整してもキャップ１０８を固定する際、新た
に位置ずれを生じ、光ファイバーとの結合効率を低下さ
せ、結合のトレランス小さくするといった欠点を有して
いる。Thereafter, a light-transmissive window member 109 is hermetically sealed for use as a wall member in the center, and a spherical lens 1 made of glass, sapphire, ruby, etc. is placed in the center of the window member 109.
A cap 108 in which 06 is fixed with resin 107 or the like is mounted on the stem base 101 so that the inside of the device is airtight. In such a conventional optical semiconductor device, in order to accurately align the optical axes of the light emitting part of the optical semiconductor element 1040 and the ball lens 106, when attaching the cap 108 to the stem base 101, the positions of both are adjusted, and then the cap is removed. 108 must be fixed to the stem base 101, and this position adjustment and fixing work is difficult and time consuming. Furthermore, in such a conventional optical semiconductor device, even if the optical semiconductor element 10 and the bulb lens 106 are adjusted to the optimum position, a new positional shift occurs when the cap 108 is fixed, which reduces the coupling efficiency with the optical fiber. This has the disadvantage of reducing the bonding tolerance.

本発明は従来の光半導体装置のかかる欠点を除去するこ
とを目的とするものである。The present invention aims to eliminate such drawbacks of conventional optical semiconductor devices.

次に本発明の光半導体装置の一実施例につき、図面を参
照して説明する。Next, one embodiment of the optical semiconductor device of the present invention will be described with reference to the drawings.

第２図、第３図に於いて、２００はステムでステムベー
ス２０１に外部導出リード２０２がガラス２０３で気密
封着されている。ステムベース２０１には光半導体素子
２０４を固定する際に位置決めをする為のマウント用凹
部とキャップ２０８を取付ける際の位置決めを行なう為
の嵌合凹部２１２とが設けられている。光半導体素子２
０４はステムベース２０１の凹部２１４に固定され光半
導体素子２０４の電極は、外部導出リード２０２と金属
細線２０５で電気的に接続されている。しかる後、中央
にガラス、サファア、あるいはルビー等よりなる球状レ
ンズ２０６がガラス２１０で、壁部材２１１に封着され
、かつ壁部材２１１にステムへの取付けの際の位置決め
を行なう為の嵌合凸部２１３の設けられたキャップ２０
８が、嵌合凸部２１３とステムベース２０１の嵌合凹部
２１２とで嵌合され、しかる後ステムベース２０１に装
置内部が気密になるよう、抵抗溶接等により固定される
。In FIGS. 2 and 3, 200 is a stem, and an external lead 202 is hermetically sealed to a stem base 201 with a glass 203. The stem base 201 is provided with a mounting recess for positioning when fixing the optical semiconductor element 204 and a fitting recess 212 for positioning when attaching the cap 208. Optical semiconductor element 2
04 is fixed in the recess 214 of the stem base 201, and the electrode of the optical semiconductor element 204 is electrically connected to the external lead 202 by a thin metal wire 205. Thereafter, a spherical lens 206 made of glass, sapphire, ruby, etc. is sealed to the wall member 211 with a glass 210 in the center, and a fitting convex is provided on the wall member 211 for positioning when it is attached to the stem. Cap 20 provided with section 213
8 is fitted between the fitting protrusion 213 and the fitting recess 212 of the stem base 201, and then fixed to the stem base 201 by resistance welding or the like so that the inside of the device is airtight.

このような、本発明の光半導体装置によれば。According to such an optical semiconductor device of the present invention.

ステムベース２０１の嵌合凹部２１２に対する。光半導
体素子２０４を固定するマウント用凹部２１４の位置な
らびにキャップ２０８の壁部材２１１の嵌合凸部２１３
に対する球レンズ２０６の取付は部の位置を精度よく形
成することが可能で、ステムベース２０１上に固定され
た光半導体素子２０４とキャップ２０８に取付けられた
球レンズ２０６とを精度良く容易に、・・位置決めする
ことができ、かつ、キャップ２０８をステムベース２１
１に抵抗溶接等に固定する際、両者は予め嵌合されてい
る為新たな位置ずれを生じることなく固定ができる。こ
の為、光ファイバーとの結合効率及び法会のトレランス
に優れた光半導体装置を容易に提供することが可能とな
る。to the fitting recess 212 of the stem base 201. The position of the mounting recess 214 for fixing the optical semiconductor element 204 and the fitting protrusion 213 of the wall member 211 of the cap 208
When attaching the ball lens 206 to the stem base 201, the position of the ball lens 206 can be precisely formed, and the optical semiconductor element 204 fixed on the stem base 201 and the ball lens 206 attached to the cap 208 can be easily and precisely connected. - Capable of positioning and attaching the cap 208 to the stem base 21
1 by resistance welding or the like, since both are fitted in advance, the fixing can be done without any new positional displacement. For this reason, it becomes possible to easily provide an optical semiconductor device with excellent coupling efficiency with optical fibers and tolerance of optical fibers.

以上、本発明の実施例として光半導体発光装置への適用
例につき説明したが、本発明は、発光受光装置の別なく
有効で、かつレンズの材質・形状等によシ、何ら制限を
受けるものではなく、特許請求範囲に記す全ての光半導
体装置に及ぶことは明らかであろう。Although the application example of the present invention to an optical semiconductor light-emitting device has been described above as an embodiment of the present invention, the present invention is effective regardless of the light-emitting light-receiving device, and is not subject to any limitations depending on the material, shape, etc. of the lens. Rather, it is clear that the invention extends to all optical semiconductor devices recited in the claims.

【図面の簡単な説明】[Brief explanation of the drawing]

第１図は、従来の光半導体装置の縦断面図であシ、第２
図は、本発明の光半導体装置の一実施例を示す縦断面図
、第３図は、第２図の実施例で、第２図断面と直交する
位置に於ける縦断面図である。 １００．２００・・・・・・ステム、１０１，２０１・
・・・・・ステムベース、１０２，２０２・・・・・・
外部導出リード、１０３゜２０３・・・・・・ガラス、
１０４，２０４−・・・・・光半導体素子、１０５．２
０５・・・・・・金属細線、１０６，２０６・・・・・
・球状レンズ、１０７・・・・・・樹脂、１０８，２０
８・・・・・・キャップ。 １０９・・・・・・窓部材、２１０・・・・・・ガラス
、１１１，２１１・・・・・・壁部材、２１２・・・・
・・嵌合用凹部、２１３・・・・・・嵌合用凸部、２１
４・・・・・・マウント用凹部。FIG. 1 is a vertical cross-sectional view of a conventional optical semiconductor device.
The figure is a longitudinal sectional view showing one embodiment of the optical semiconductor device of the present invention, and FIG. 3 is a longitudinal sectional view of the embodiment of FIG. 2 at a position perpendicular to the cross section of FIG. 2. 100.200...Stem, 101,201・
...Stem base, 102,202...
External lead, 103°203...Glass,
104,204-...Optical semiconductor element, 105.2
05...Thin metal wire, 106,206...
・Spherical lens, 107... Resin, 108, 20
8...Cap. 109... Window member, 210... Glass, 111, 211... Wall member, 212...
...Fitting recess, 213...Fitting convex, 21
4... Concavity for mounting.

Claims (1)

【特許請求の範囲】[Claims] 光半導体素子が塔載されたステムに、レンズの取付けら
れたキャップを封止してなる光半導体装置において、ス
テムとキャップのそれぞれの取付面に嵌合用の凹凸部を
形成し、両者を嵌合した後、キャップをステムに固定し
てなることを特徴とする光半導体装置。In an optical semiconductor device formed by sealing a cap on which a lens is attached to a stem on which an optical semiconductor element is mounted, an uneven part for fitting is formed on each mounting surface of the stem and the cap, and the two are fitted together. After that, the cap is fixed to the stem.
JP57212354A 1982-12-03 1982-12-03 Photo semiconductor device Pending JPS59101882A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP57212354A JPS59101882A (en) 1982-12-03 1982-12-03 Photo semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP57212354A JPS59101882A (en) 1982-12-03 1982-12-03 Photo semiconductor device

Publications (1)

Publication Number Publication Date
JPS59101882A true JPS59101882A (en) 1984-06-12

Family

ID=16621148

Family Applications (1)

Application Number Title Priority Date Filing Date
JP57212354A Pending JPS59101882A (en) 1982-12-03 1982-12-03 Photo semiconductor device

Country Status (1)

Country Link
JP (1) JPS59101882A (en)

Cited By (31)

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JPH0284351U (en) * 1988-12-16 1990-06-29
JPH06167641A (en) * 1992-08-21 1994-06-14 American Teleph & Telegr Co <Att> Optical assembly
JPH06208037A (en) * 1992-11-30 1994-07-26 American Teleph & Telegr Co <Att> Optical package
JP2005150226A (en) * 2003-11-12 2005-06-09 Hamamatsu Photonics Kk Optical module for transmitting radio frequency signal and manufacturing method thereof
WO2005055316A2 (en) * 2003-11-26 2005-06-16 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7115961B2 (en) 2004-08-24 2006-10-03 Micron Technology, Inc. Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices
US7190039B2 (en) 2005-02-18 2007-03-13 Micron Technology, Inc. Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers
US7189954B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers
US7199439B2 (en) 2004-06-14 2007-04-03 Micron Technology, Inc. Microelectronic imagers and methods of packaging microelectronic imagers
US7223626B2 (en) 2004-08-19 2007-05-29 Micron Technology, Inc. Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers
US7253397B2 (en) 2004-02-23 2007-08-07 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7253390B2 (en) 2004-06-14 2007-08-07 Micron Technology, Inc. Methods for packaging microelectronic imagers
US7253957B2 (en) 2004-05-13 2007-08-07 Micron Technology, Inc. Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers
US7262134B2 (en) 2005-09-01 2007-08-28 Micron Technology, Inc. Microfeature workpieces and methods for forming interconnects in microfeature workpieces
US7271482B2 (en) 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US7276393B2 (en) 2004-08-26 2007-10-02 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7288757B2 (en) 2005-09-01 2007-10-30 Micron Technology, Inc. Microelectronic imaging devices and associated methods for attaching transmissive elements
US7294897B2 (en) 2004-06-29 2007-11-13 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7303931B2 (en) 2005-02-10 2007-12-04 Micron Technology, Inc. Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces
US7321455B2 (en) 2003-09-18 2008-01-22 Micron Technology, Inc. Microelectronic devices and methods for packaging microelectronic devices
US7397066B2 (en) 2004-08-19 2008-07-08 Micron Technology, Inc. Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
US7402453B2 (en) 2004-07-28 2008-07-22 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7416913B2 (en) 2004-07-16 2008-08-26 Micron Technology, Inc. Methods of manufacturing microelectronic imaging units with discrete standoffs
US7429494B2 (en) 2004-08-24 2008-09-30 Micron Technology, Inc. Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers
US7498647B2 (en) 2004-06-10 2009-03-03 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7511262B2 (en) 2004-08-30 2009-03-31 Micron Technology, Inc. Optical device and assembly for use with imaging dies, and wafer-label imager assembly
US7547877B2 (en) 2004-08-30 2009-06-16 Micron Technology, Inc. Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers
US7646075B2 (en) 2004-08-31 2010-01-12 Micron Technology, Inc. Microelectronic imagers having front side contacts
US8008192B2 (en) 2005-06-28 2011-08-30 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
US8092734B2 (en) 2004-05-13 2012-01-10 Aptina Imaging Corporation Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers

Citations (2)

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JPS56112771A (en) * 1980-02-13 1981-09-05 Hitachi Ltd Electronic component for light communication
JPS5910289A (en) * 1982-07-09 1984-01-19 Hitachi Ltd Semiconductor device

Patent Citations (2)

* Cited by examiner, † Cited by third party
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JPS56112771A (en) * 1980-02-13 1981-09-05 Hitachi Ltd Electronic component for light communication
JPS5910289A (en) * 1982-07-09 1984-01-19 Hitachi Ltd Semiconductor device

Cited By (53)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0284351U (en) * 1988-12-16 1990-06-29
JPH06167641A (en) * 1992-08-21 1994-06-14 American Teleph & Telegr Co <Att> Optical assembly
JPH06208037A (en) * 1992-11-30 1994-07-26 American Teleph & Telegr Co <Att> Optical package
US7321455B2 (en) 2003-09-18 2008-01-22 Micron Technology, Inc. Microelectronic devices and methods for packaging microelectronic devices
JP2005150226A (en) * 2003-11-12 2005-06-09 Hamamatsu Photonics Kk Optical module for transmitting radio frequency signal and manufacturing method thereof
WO2005055316A2 (en) * 2003-11-26 2005-06-16 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
WO2005055316A3 (en) * 2003-11-26 2005-08-18 Micron Technology Inc Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7583862B2 (en) 2003-11-26 2009-09-01 Aptina Imaging Corporation Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7253397B2 (en) 2004-02-23 2007-08-07 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US8092734B2 (en) 2004-05-13 2012-01-10 Aptina Imaging Corporation Covers for microelectronic imagers and methods for wafer-level packaging of microelectronics imagers
US7253957B2 (en) 2004-05-13 2007-08-07 Micron Technology, Inc. Integrated optics units and methods of manufacturing integrated optics units for use with microelectronic imagers
US8703518B2 (en) 2004-06-10 2014-04-22 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US8035179B2 (en) 2004-06-10 2011-10-11 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7498647B2 (en) 2004-06-10 2009-03-03 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7253390B2 (en) 2004-06-14 2007-08-07 Micron Technology, Inc. Methods for packaging microelectronic imagers
US7262405B2 (en) 2004-06-14 2007-08-28 Micron Technology, Inc. Prefabricated housings for microelectronic imagers
US7199439B2 (en) 2004-06-14 2007-04-03 Micron Technology, Inc. Microelectronic imagers and methods of packaging microelectronic imagers
US7419841B2 (en) 2004-06-14 2008-09-02 Micron Technology, Inc. Microelectronic imagers and methods of packaging microelectronic imagers
US8053857B2 (en) 2004-06-29 2011-11-08 Round Rock Research, Llc Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7858429B2 (en) 2004-06-29 2010-12-28 Round Rock Research, Llc Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7294897B2 (en) 2004-06-29 2007-11-13 Micron Technology, Inc. Packaged microelectronic imagers and methods of packaging microelectronic imagers
US7416913B2 (en) 2004-07-16 2008-08-26 Micron Technology, Inc. Methods of manufacturing microelectronic imaging units with discrete standoffs
US7265330B2 (en) 2004-07-19 2007-09-04 Micron Technology, Inc. Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers
US7189954B2 (en) 2004-07-19 2007-03-13 Micron Technology, Inc. Microelectronic imagers with optical devices and methods of manufacturing such microelectronic imagers
US7402453B2 (en) 2004-07-28 2008-07-22 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7858420B2 (en) 2004-07-28 2010-12-28 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7655507B2 (en) 2004-07-28 2010-02-02 Micron Technology Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7439598B2 (en) 2004-07-28 2008-10-21 Micron Technology, Inc. Microelectronic imaging units
US7397066B2 (en) 2004-08-19 2008-07-08 Micron Technology, Inc. Microelectronic imagers with curved image sensors and methods for manufacturing microelectronic imagers
US7723741B2 (en) 2004-08-19 2010-05-25 Aptina Imaging Corporation Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers
US7223626B2 (en) 2004-08-19 2007-05-29 Micron Technology, Inc. Spacers for packaged microelectronic imagers and methods of making and using spacers for wafer-level packaging of imagers
US7429494B2 (en) 2004-08-24 2008-09-30 Micron Technology, Inc. Microelectronic imagers with optical devices having integral reference features and methods for manufacturing such microelectronic imagers
US7115961B2 (en) 2004-08-24 2006-10-03 Micron Technology, Inc. Packaged microelectronic imaging devices and methods of packaging microelectronic imaging devices
US7341881B2 (en) 2004-08-24 2008-03-11 Micron Technology, Inc. Methods of packaging and testing microelectronic imaging devices
US7511374B2 (en) 2004-08-26 2009-03-31 Aptina Imaging Corporation Microelectronic imaging units having covered image sensors
US7276393B2 (en) 2004-08-26 2007-10-02 Micron Technology, Inc. Microelectronic imaging units and methods of manufacturing microelectronic imaging units
US7691660B2 (en) 2004-08-26 2010-04-06 Aptina Imaging Corporation Methods of manufacturing microelectronic imaging units on a microfeature workpiece
US7786574B2 (en) 2004-08-26 2010-08-31 Aptina Imaging Corp. Microelectronic imaging units
US7511262B2 (en) 2004-08-30 2009-03-31 Micron Technology, Inc. Optical device and assembly for use with imaging dies, and wafer-label imager assembly
US7547877B2 (en) 2004-08-30 2009-06-16 Micron Technology, Inc. Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers
US7842915B2 (en) 2004-08-30 2010-11-30 Micron Technology, Inc. Microelectronic imagers with integrated optical devices and methods for manufacturing such microelectronic imagers
US7646075B2 (en) 2004-08-31 2010-01-12 Micron Technology, Inc. Microelectronic imagers having front side contacts
US7956443B2 (en) 2004-09-02 2011-06-07 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7300857B2 (en) 2004-09-02 2007-11-27 Micron Technology, Inc. Through-wafer interconnects for photoimager and memory wafers
US7271482B2 (en) 2004-12-30 2007-09-18 Micron Technology, Inc. Methods for forming interconnects in microelectronic workpieces and microelectronic workpieces formed using such methods
US7795649B2 (en) 2005-02-10 2010-09-14 Aptina Imaging Corporation Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces
US7303931B2 (en) 2005-02-10 2007-12-04 Micron Technology, Inc. Microfeature workpieces having microlenses and methods of forming microlenses on microfeature workpieces
US7696588B2 (en) 2005-02-18 2010-04-13 Aptina Imaging Corporation Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers
US7190039B2 (en) 2005-02-18 2007-03-13 Micron Technology, Inc. Microelectronic imagers with shaped image sensors and methods for manufacturing microelectronic imagers
US8008192B2 (en) 2005-06-28 2011-08-30 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
US9293367B2 (en) 2005-06-28 2016-03-22 Micron Technology, Inc. Conductive interconnect structures and formation methods using supercritical fluids
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