JPS61106773A - Gas phase growing device of thin film - Google Patents

Abstract

PURPOSE:To obtain a titled device which can form a film of good quality, whose electric resistance is low by constituting it so that a substrate installed in a vacuum container is heated to a prescribed temperature, a gas for etching is led in and the surface of the substrate is cleaned, and thereafter, growth of a thin film is executed. CONSTITUTION:A substrate 31 is installed on a substrate holder 33 in a vacuum container 11, heated to a prescribed temperature by operating a heater 41, and also the inside of the vacuum container 11 is set to a prescribed pressure or below by a vacuum pump 21 of an exhaust system 20. Subsequently, a prescribed etching gas is led into the vacuum container 11 from a gas cylinder 51, and the surface of the substrate is brought to etching and cleaned. Thereafter, as necessary, the etching gas is exhausted and also a temperature of the substrate is adjusted, and thereafter, a gas for executing a reaction is led into the vacuum container 11 form a gas cylinder 61, and a thin film 32 having high purity and high adhesive strength is grown in gas phase on the surface of the substrate 31.

Description

DETAILED DESCRIPTION OF THE INVENTION (Field of Industrial Application) The present invention relates to an apparatus for growing thin films in a gas phase. It is particularly suitable for growing thin films of high purity, and is especially effective when growing thin films of pure metals or mixtures of these compounds.

(Prior art and its problems) Equipment for forming thin films in the vapor phase (hereinafter simply referred to as vapor phase growth equipment)
Generally, thin films are created at high temperatures, and the growth of the film is performed by reaction with the surface of the substrate, so compared to films made using sputtering equipment, the film has greater adhesion strength and better step coverage. It has excellent characteristics. In recent years, the step coverage in particular has been reconsidered, and it is being reconsidered for use in producing thin films for insulating films and electrodes in electronics such as semiconductors. However, thin films produced using this device generally have drawbacks such as low purity, impurities mixed in at the interface, high electrical resistance, and hard films. These drawbacks are caused by chemically active metals such as mB group represented by aluminum, IVA group represented by Ti, VA group represented by Nb, and VIA group represented by Mo on the periodic table. This phenomenon appears more frequently when creating films of compounds.

(Objective of the Invention) - The object of the present invention is to provide an apparatus capable of eliminating these drawbacks and producing a high-quality film with low electrical resistance.

Another object of the present invention is to provide an apparatus capable of depositing a substantially uniform thin film even inside a deep hole and producing a highly pure thin film.

Another object of the present invention is to increase the purity of the thin film and the adhesion strength to the substrate surface by growing the thin film after cleaning the surface of the substrate, and to grow the thin film without any unnecessary substances interposed between the substrate and the thin film. The goal is to provide a means to create .

(Structure of the Invention) The present invention achieves the above object by using a vapor phase growth apparatus equipped with a means for growing a thin film after introducing a chemically active gas to clean the surface of the substrate before depositing the thin film. It is something.

(Examples) Next, the present invention will be explained in detail by examples based on the drawings.

〒 Fig. 1 shows a basic embodiment of this invention.
0 is a vacuum system, 11 is a vacuum container, and 12 is a counter flange. The vacuum container 11 is made of a material that releases little gas, such as stainless steel, so that its interior can be evacuated to an ultra-high vacuum. It is desirable that the internal surface of the vacuum container 11 be subjected to acid treatment, blasting treatment, or the like. Reference numeral 20 denotes an evacuation system, which has the characteristics of the present invention, and uses a vacuum pump 21 capable of evacuation to an ultra-high vacuum, such as a cryopump, a trap and oil diffusion pump, or a turbo molecular bomb. Of course, if an auxiliary exhaust system is required, add the necessary system. 22 is the main valve. 30 is a substrate system, 31 is a substrate, 32 is a formed thin film, and 33 is a substrate holder. 4o is a means for heating the substrate, 41 is a heater, 42
is its power source. Reference numeral 50 denotes a means for introducing a gas for causing a reaction, 51 is a cylinder, 52 is a flow meter, 53 is a barrier pull leak, and 54 is a flow rate control system. 60 is means for introducing a predetermined gas for etching, 61 is a cylinder, 62 is a flow meter, 63 is a barrier pull i-leak, 64
is the flow control system.

The device operates as follows. First, the counter flange 12 is opened, the board 31 is set on the board holder 33, and the flange 12 is closed. Then, using the exhaust system 20,
The inside of the vacuum container 11 is evacuated to a predetermined pressure or less. After evacuation, the heater power source 42 is operated to heat the substrate. When the temperature reaches a predetermined temperature, a predetermined etching gas is introduced using the gas introduction system 60 to etch and clean the substrate surface.

Then, if necessary, the introduction of etching gas is stopped and the gas is exhausted to the required extent. After that, using the introduction system 50, a predetermined gas is passed through the barrier pull leak 53 to the vacuum vessel 11.
to be introduced within. Then, a thin film is attached to the surface of the substrate 31. The temperature of the substrate during etching and when creating a thin film is determined by the type of gas introduced and the material of the substrate.
It will be decided on a case-by-case basis. Examples of the etching gas include Plasma Chemistry and
Plasma Processing, Volume
1. Number 4 (December 198)
1 issue) Table II (331 pages fluorine plasma) and Table IV (347 pages chlorine/fluorine plasma)
It is preferable to use the gases shown in the column of Ga55es.
Many gases have traditionally been used to create thin films.
Various reactive gases will continue to be developed.

As a result of cleaning the surface with an etching reaction gas immediately before forming a thin film and forming a film immediately thereafter, all of the objects of the present invention were achieved. Conventionally, in this type of cleaning immediately before film formation, bombardment methods using electrons or ions have been used, but the damage to the substrate is much less compared to these methods.

In addition. In the apparatus of this embodiment, the gas introduction system 50
Although only one system is used, multiple systems may be used if necessary, or a bubbling device may be used depending on the type of reaction gas.

FIG. 2 shows yet another embodiment.

In this embodiment, the apparatus has a multi-chamber structure (a royal room in this embodiment) and is designed for continuous mass production. The vacuum chambers are 11, 13, and 14, and each chamber is separated from the outside by valves 15, 16, 17, and 1B. Each chamber has a main valve and a vacuum pump, 24 and 23.22 and 21.
It has 26 and 25. The substrate 31 is fed in the direction of the arrow 33. Its operation is the same as that of a normal continuous device: open the valve 15 and transfer the substrate 31 into the chamber 13, close the valve 15 and exhaust the air with the exhaust system 23, 24, open the valve 16 and transfer the substrate into the chamber 11, 16 is closed to deposit the thin film, the valve 17 is opened and the substrate is transferred into the chamber 14 which is previously evacuated, the valve 17 is closed and the valve 18 is opened to introduce atmospheric air and the substrate is taken out into the atmospheric pressure space. The valve 18 is closed and the inside of the container 14 is evacuated by the exhaust systems 25 and 26. These steps can be performed individually or in parallel. The numbers of the songs are the same as in the embodiment shown in FIG. In the embodiment shown in FIG. 2, the interior of the vacuum container or chamber 11 is always kept in a vacuum, so that highly active gases, such as 021 N21, which cause an increase in electrical resistance during the production of metal thin films, are not present.
Co, CO21H20, etc. can be greatly reduced, and a high-quality thin film can be created. Note that the means 60 for introducing a predetermined gas for etching (; ) is set where necessary as necessary. For example, it is installed in the vacuum chamber 13, as shown at 60), and after etching in this chamber, the next vacuum chamber 11 is A number of methods are possible, such as sending the substrate into the substrate, and these methods are determined on a case-by-case basis depending on the needs.

It goes without saying that the above description does not have a limited meaning and can be modified in many ways.

(Effects of the Invention) According to the present invention, a high-quality thin film with high purity, high adhesion strength, and good step coverage can be created on a substrate.

[Brief explanation of drawings]

FIG. 1 is a diagram showing an embodiment of the invention. FIG. 2 is a diagram showing another embodiment. In the figure, 11, 13, and 14 are vacuum vessels, 20 is an exhaust system, and 3
1 is a substrate, 40 is a heating means, 5o is a means for introducing gas, and 60 is a means for introducing a predetermined gas for etching.

Claims (1)

[Claims] (1) A container that evacuates the inside, an exhaust system that exhausts the inside of the container, a means for installing a substrate in the container and heating the substrate to a predetermined temperature, and introducing a predetermined gas into the container. and a means for introducing a predetermined gas for etching, before growing a thin film on the substrate, introducing the predetermined gas for etching, and after cleaning the surface of the substrate, growing the thin film. A thin film vapor phase growth apparatus characterized by: