JPS6098631A - 終点検出装置 - Google Patents

終点検出装置

Info

Publication number
JPS6098631A
JPS6098631A JP20481683A JP20481683A JPS6098631A JP S6098631 A JPS6098631 A JP S6098631A JP 20481683 A JP20481683 A JP 20481683A JP 20481683 A JP20481683 A JP 20481683A JP S6098631 A JPS6098631 A JP S6098631A
Authority
JP
Japan
Prior art keywords
end point
intensity
change
detected
point detection
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP20481683A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0564455B2 (enExample
Inventor
Tetsujiro Kotani
小谷　哲二郎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP20481683A priority Critical patent/JPS6098631A/ja
Publication of JPS6098631A publication Critical patent/JPS6098631A/ja
Publication of JPH0564455B2 publication Critical patent/JPH0564455B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
JP20481683A 1983-11-02 1983-11-02 終点検出装置 Granted JPS6098631A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP20481683A JPS6098631A (ja) 1983-11-02 1983-11-02 終点検出装置

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP20481683A JPS6098631A (ja) 1983-11-02 1983-11-02 終点検出装置

Related Child Applications (1)

Application Number Title Priority Date Filing Date
JP5284596A Division JP2790111B2 (ja) 1996-03-11 1996-03-11 プラズマ処理方法

Publications (2)

Publication Number Publication Date
JPS6098631A true JPS6098631A (ja) 1985-06-01
JPH0564455B2 JPH0564455B2 (enExample) 1993-09-14

Family

ID=16496850

Family Applications (1)

Application Number Title Priority Date Filing Date
JP20481683A Granted JPS6098631A (ja) 1983-11-02 1983-11-02 終点検出装置

Country Status (1)

Country Link
JP (1) JPS6098631A (enExample)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239819A (ja) * 1987-03-27 1988-10-05 Hitachi Ltd プラズマ処理終点判定方法及び装置
JPS6448420A (en) * 1987-08-19 1989-02-22 Hitachi Ltd Plasma treater and decision method of end point of plasma treatment
JP2001007084A (ja) * 1999-06-21 2001-01-12 Nec Corp エッチング終点判定方法

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
JPS56114329A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for sensing time of completion of dry etching

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4208240A (en) * 1979-01-26 1980-06-17 Gould Inc. Method and apparatus for controlling plasma etching
JPS56114329A (en) * 1980-02-15 1981-09-08 Chiyou Lsi Gijutsu Kenkyu Kumiai Method for sensing time of completion of dry etching

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63239819A (ja) * 1987-03-27 1988-10-05 Hitachi Ltd プラズマ処理終点判定方法及び装置
JPS6448420A (en) * 1987-08-19 1989-02-22 Hitachi Ltd Plasma treater and decision method of end point of plasma treatment
JP2001007084A (ja) * 1999-06-21 2001-01-12 Nec Corp エッチング終点判定方法
US6537460B1 (en) 1999-06-21 2003-03-25 Nec Corporation Method for detecting an end point of etching in a plasma-enhanced etching process

Also Published As

Publication number Publication date
JPH0564455B2 (enExample) 1993-09-14

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