JPS6096760A - スパツタリングタ−ゲツト装置 - Google Patents
スパツタリングタ−ゲツト装置Info
- Publication number
- JPS6096760A JPS6096760A JP20367483A JP20367483A JPS6096760A JP S6096760 A JPS6096760 A JP S6096760A JP 20367483 A JP20367483 A JP 20367483A JP 20367483 A JP20367483 A JP 20367483A JP S6096760 A JPS6096760 A JP S6096760A
- Authority
- JP
- Japan
- Prior art keywords
- target
- metal plate
- plate
- sputtering
- sputtering target
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000005477 sputtering target Methods 0.000 title claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims abstract description 30
- 239000002184 metal Substances 0.000 claims abstract description 30
- 239000000463 material Substances 0.000 claims description 8
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 7
- 238000001816 cooling Methods 0.000 claims description 5
- 238000002844 melting Methods 0.000 claims description 4
- 230000008018 melting Effects 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- 239000011733 molybdenum Substances 0.000 claims description 4
- 238000004544 sputter deposition Methods 0.000 abstract description 7
- 238000012856 packing Methods 0.000 abstract description 4
- 238000005476 soldering Methods 0.000 abstract description 2
- 230000002093 peripheral effect Effects 0.000 abstract 1
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 2
- ZEKANFGSDXODPD-UHFFFAOYSA-N glyphosate-isopropylammonium Chemical compound CC(C)N.OC(=O)CNCP(O)(O)=O ZEKANFGSDXODPD-UHFFFAOYSA-N 0.000 description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910001362 Ta alloys Inorganic materials 0.000 description 1
- DZZDTRZOOBJSSG-UHFFFAOYSA-N [Ta].[W] Chemical compound [Ta].[W] DZZDTRZOOBJSSG-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 230000003749 cleanliness Effects 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910002804 graphite Inorganic materials 0.000 description 1
- 239000010439 graphite Substances 0.000 description 1
- 229910052742 iron Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 229910000623 nickel–chromium alloy Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 238000005478 sputtering type Methods 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- 239000010409 thin film Substances 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
Landscapes
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20367483A JPS6096760A (ja) | 1983-11-01 | 1983-11-01 | スパツタリングタ−ゲツト装置 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20367483A JPS6096760A (ja) | 1983-11-01 | 1983-11-01 | スパツタリングタ−ゲツト装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6096760A true JPS6096760A (ja) | 1985-05-30 |
| JPS6330989B2 JPS6330989B2 (enExample) | 1988-06-21 |
Family
ID=16477966
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20367483A Granted JPS6096760A (ja) | 1983-11-01 | 1983-11-01 | スパツタリングタ−ゲツト装置 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6096760A (enExample) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63183262U (enExample) * | 1987-05-18 | 1988-11-25 | ||
| JPS63195565U (enExample) * | 1987-05-30 | 1988-12-15 |
-
1983
- 1983-11-01 JP JP20367483A patent/JPS6096760A/ja active Granted
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63183262U (enExample) * | 1987-05-18 | 1988-11-25 | ||
| JPS63195565U (enExample) * | 1987-05-30 | 1988-12-15 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPS6330989B2 (enExample) | 1988-06-21 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JPH0783077B2 (ja) | 一体化されたヒートパイプと電子回路組立体およびそれらを一体化する方法 | |
| JP2002299432A (ja) | セラミックサセプターの支持構造 | |
| JPS6137963A (ja) | カソードスパツタ用ターゲツト板 | |
| JPH11157953A (ja) | セラミックスと金属との構造体及びそれを用いた静電チャック装置 | |
| CN105210169B (zh) | 功率兼容性更高的溅射靶 | |
| JPH06315925A (ja) | 基板の変形法及び装置 | |
| JPS6096760A (ja) | スパツタリングタ−ゲツト装置 | |
| WO1992017622A1 (en) | Thermally compatible sputter target and backing plate assembly | |
| JP6508774B2 (ja) | スパッタリングターゲット組立体 | |
| JPH10107047A (ja) | ろう材層を有する半導体基体 | |
| JP2005032898A (ja) | セラミックサセプターの支持構造 | |
| US7236367B2 (en) | Power electronics component | |
| JPS63227776A (ja) | 沈積装置用陰極／ターゲット組合体 | |
| JP3289890B2 (ja) | ヒートシンクおよびその製造方法 | |
| JPH0967685A (ja) | プラズマエッチング用平行平板電極 | |
| JPS63241921A (ja) | 分子線エピタキシ装置の基板加熱装置 | |
| JP2002093975A (ja) | 回路基板の冷却構造 | |
| JPH0321092B2 (enExample) | ||
| JP2780437B2 (ja) | はんだバンプの形成方法 | |
| JP2533573B2 (ja) | スパッタリング用タ―ゲット | |
| US7100815B2 (en) | Diebond strip | |
| JPH0334865B2 (enExample) | ||
| JPH04199547A (ja) | 半導体装置 | |
| JPH0142914B2 (enExample) | ||
| JPS60135572A (ja) | スパツタリング方法 |