JPS6095840A - Plasma x-ray generation device - Google Patents

Plasma x-ray generation device

Info

Publication number
JPS6095840A
JPS6095840A JP58204003A JP20400383A JPS6095840A JP S6095840 A JPS6095840 A JP S6095840A JP 58204003 A JP58204003 A JP 58204003A JP 20400383 A JP20400383 A JP 20400383A JP S6095840 A JPS6095840 A JP S6095840A
Authority
JP
Japan
Prior art keywords
electrode
switch
gas
voltage
closing
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP58204003A
Other languages
Japanese (ja)
Inventor
Yoshitaka Kitamura
北村 芳隆
Masaki Yamabe
山部 正樹
Yasuo Furukawa
古川 泰男
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP58204003A priority Critical patent/JPS6095840A/en
Publication of JPS6095840A publication Critical patent/JPS6095840A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H05ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05GX-RAY TECHNIQUE
    • H05G2/00Apparatus or processes specially adapted for producing X-rays, not involving X-ray tubes, e.g. involving generation of a plasma
    • H05G2/001X-ray radiation generated from plasma
    • H05G2/003X-ray radiation generated from plasma being produced from a liquid or gas

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • X-Ray Techniques (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)

Abstract

PURPOSE:To control the timing between gas injection and main discharge with good reproductivity by applying voltage between fixed and moving electrodes in which a semiconductive dielectric is provided on the opposed surface and absorbing the moving electrode in the fixed electrode and then opening a gas injection valve. CONSTITUTION:The vacuum exhaust in a chamber 5 is performed by closing a switch S2 and opening a switch S1 and making a moving electrode 8 adhere to a semiconductive dielectric 2. Subsequently, for example, the gas in a gas storage chamber 6 supplied from a gas bomb through a supply port 10 is injected into a chamber 5 from a permeation hole 14 and a gas injection port 11 by closing the switch S1 and opening the switch S2 and then the moving electrode 8. Then after the switch S2 is closed, the switch S1 is opened, the permeation hole 14 is clogged, and properly preset delay time elaspses, discharge is performed by applying high voltage HV between electrodes 3 and 4 by closing the switch S3 and X rays are geneerated by putting injection gas into plasma. Since the gas injection valve operation is performed by electrostatic force, the response speed of the valve opening and closing is fast. As a result, the time required for the opening and closing and the delay time until discharge can be controlled with good reproductivity.

Description

【発明の詳細な説明】 (11発明の技術うj町 本発明ε、1力スタイププラスマX線発生装置、11r
しく t、l!+、’、該装恒°の1°見空−f−ヤン
ハ内・′、カスを供給・するカス「に大ハルツに関ずイ
14)のでil+る。
DETAILED DESCRIPTION OF THE INVENTION (11 Techniques of the invention, 1-force Stipe plasma X-ray generator, 11 r
Shiku t,l! +,', 1 degree of the sky -f-Yanha・', the scum that supplies the scum ``I14), so it is il+.

(2)技術の背景 近年半導体集J:+’を回1/8の集積度の向−1に伴
い、リブミクI−Jンレヘルの微細パターン形成が行わ
れつつある。ごのよ・)ノ、C微8111パターン形成
にJりするMt’t先注においては従来の紫外線より波
長の短いX線を用いノこ力か1;4!い精度でパターン
形成が行なえる。
(2) Background of the technology In recent years, with the trend toward 1/8 integration in semiconductor integrated circuits, the formation of microscopic patterns in semiconductor devices is being carried out. In Mt't pre-ordering for forming C fine 8111 patterns, we use X-rays with a shorter wavelength than conventional ultraviolet rays, and the saw force is 1;4! Pattern formation can be performed with high precision.

X線源の1つであるガスタイプのプラズマX線発生装置
は」1空チヤンバ内に注入されたガスを放iiによりプ
ラズマ化し、プラズマから放出されるX線を供給する8
!置であるか、かかる装置におい′(はカスの注入手段
およびガス注入と主放電とのタイミングが重要な要素で
ある。
A gas-type plasma X-ray generator, which is one of the X-ray sources, converts gas injected into an empty chamber into plasma by radiation, and supplies X-rays emitted from the plasma.8
! In such a device, the means for injecting the gas and the timing of the gas injection and the main discharge are important factors.

(:u iit来技両技術題点 1メL未ゾラスマX線発生装置1仁こ用いられていたカ
スn:入ハルフは、コイルに電流を1闘時流し、このと
き発生ずる磁界による電磁力を利用して開閉を行゛ラハ
ルフであったが、この種のハルツにおい(は開閉に要部
る時間および二1イルに電流か61され°Cかりバルブ
が開くまでの時間に11丁現性がない欠点があり、カス
注入と放電とのタイミングか図れない問題があった。
(:u iitNext Technological Problem 1MeLMizorasma However, this type of Harz odor (has a 11-day difference in the time it takes to open and close the valve and the time it takes for the current to be applied to 61°C and the valve to open). However, there was a problem in that the timing between dregs injection and discharge could not be determined.

(4)発明の目的 本発明は手記従来の欠点に(,14の、真空チャンバへ
のカス注入と主成7Iiとのタイミンクが111現性良
く制fallできるプラズマX線発生装置の提供をLj
的とするものである。
(4) Purpose of the Invention The present invention aims to provide a plasma X-ray generator that can effectively control the timing between the injection of dregs into a vacuum chamber and the main formation 7Ii (14).
The target is

(5)発明の構成 そし′(ごの1」的は本発明によれは、!ノスタイプゾ
ラスマX線発4L装置iI+jにし=Cカス11j′蔵
歪と直空チャンバをつなくカスメト人バルブは当11亥
バルブを制止するlJJ動’ili 44λと、当該i
1」動電極に対向して配設され対向面に81′、導電性
誘電体を設り人二固定電極、A3よび上記iIJ動市極
と固定電極間に市j1−を印加する一■柑没とからなり
、曲記′電圧印加J段により固定電極とi+J動市4I
rg間に重重−を印加L7、i+J・肋市イラ(を固定
車19名に吸引し−Cカス注入ハバルブ開き、カスをl
′L空−y−中ンハヘli大する構成とり、lこことを
’i’rlj5とするプフスマX線発〕1.装置を1J
t供″・1“イ1ごとに、1、−って達成され、I′、
 N7休市fll 、iノ、j重体4j IIJ・11
JJ′llI枠に対向4°る而に設りノこ固定電極A+
′よひ当、;フイ固’j、’ll電極とi+J動電極間
に電月、を印加”する11りを配設し、当該゛小月−1
:11加丁段によりra圧を加える、二とに、1、すI
IJ動電(・セハを固定?lli極に吸引するごとによ
りカス110人ハルツの↓・1止を1]うこと、iトた
はljJ IIす」電極をハネを介し゛(保持し、開口
部には0リングを配設し、上記ハネにより可動電極を0
リングに圧着することによりガス注入バルブの制止を行
うこと、またはiiJ動電44をθ番性体により形成し
、当該pj動組電極ガスL)−人ハルブ周囲に配設した
電磁石Cと・より吸引するごとにより当該バルブ封止を
行うことを特徴とするプラズマX線発生装置を提供する
・ことによって達成される。 : (6)発明の実施例 □ 以下本発明実施例を図面によゲζ詳述する。
(5) Structure of the invention According to the present invention, the Nostype Zolasma X-ray generator 4L device iI+j = C cass 11j' connects the storage strain and the direct air chamber with the Kasmet valve. The lJJ motion 'ili 44λ that stops the valve in question, and the i
1. A fixed electrode 81' disposed opposite to the moving electrode and having a conductive dielectric material on the opposite surface, A3 and the above-mentioned iIJ electrode for applying a voltage between the moving electrode and the fixed electrode. It consists of a fixed electrode and an i + J moving city 4I by voltage application J stage.
Apply a heavy load between rg L7, i + J, and suck it into the fixed vehicle 19 people, - C scum injection valve open, and sludge l
Puchsma X-ray emission with 'L sky-y-middle nhahe li large configuration and l here as 'i'rlj5]1. 1J of equipment
For every t supply''・1''i1, 1,- is achieved, and I',
N7 rest city full, i no, j serious condition 4j IIJ・11
The saw fixed electrode A+ is installed at 4 degrees opposite the JJ'llI frame.
11 is arranged to apply electric current between the fixed electrodes and the i+J moving electrodes, and the corresponding
:11 Apply RA pressure by cutting stage, second, 1, step I
IJ electrodynamics (・Hold the electrode through the springs, hold the electrode through the spring, and make the A 0 ring is installed in the part, and the movable electrode is set to 0 by the above spring.
The gas injection valve can be stopped by crimping it to the ring, or the iiJ electrodynamic 44 can be formed from a θ-numbered body, and the electromagnet C disposed around the pj electrodynamic electrode gas L) and the human hull can be used. This is achieved by providing a plasma X-ray generator characterized in that the valve is sealed each time it is sucked. : (6) Embodiments of the invention □ Embodiments of the present invention will be described below in detail with reference to the drawings.

第1図ば本鼻明の第1の実施例を説明するためのプラズ
マX線発生装置要部の断面図で、当該装置は主としてガ
ス貯蔵室6、本廃明に係わるガス注入バルブ12、真空
チャンバ5、放電用電極3および4から構成される。
FIG. 1 is a cross-sectional view of the main parts of a plasma It consists of a chamber 5 and discharge electrodes 3 and 4.

ガス注入バルブI2は絶縁性支柱【3によっ°(甲ti
に固定された2枚の円盤状電極7および9、支柱13に
支えられJこの支柱方向に11動な円盤状Tli J:
’Ii8 (図゛ごば説明のため中間位jf(になっ゛
(いる)と、上記固定電極7および9のそれぞれ対向す
る面に設りられた2枚の半導電性U’4市体電体よび2
からなり、3枚の円盤状電極7.8および9の間にはス
イッチSlまたはS2を介し゛ζ市銑13により電圧を
印加ごきるよう配線がなされ°(いる。
The gas injection valve I2 is connected by an insulating column [3
Two disc-shaped electrodes 7 and 9 are fixed to J, supported by a pillar 13, and a disc-shaped electrode Tli J that moves in the direction of this pillar J:
'Ii8 (For illustration purposes, the middle position jf) and the two semiconductive U'4 city electric lights provided on the opposing surfaces of the fixed electrodes 7 and 9, respectively. Body number 2
Wiring is provided between the three disc-shaped electrodes 7, 8 and 9 so that a voltage can be applied by the commercial pig iron 13 via the switch Sl or S2.

そし゛(真空チャンバ5へのカス注入1」ll上にある
電極9および半導71i性訪電休2にはガスを通ずlり
通人14が設りられている。
Then, a gas passageway 14 is provided to pass gas through the electrode 9 and the semiconductor 71i located above the dregs injection 1 into the vacuum chamber 5.

かかる構成の力゛ス注入ハルツI2におい−(、例えば
スイ・7チSlを開き、スイッチS2を閉しζrti極
)(と9間にtllI:I−を印加するとソ、−1ンセ
ン・ラーベツク(Jol+n5en−Ral+bek)
効果によりこれら電極間に静電力による引力が働き、i
+J動′市極8が固定?、1i4449に吸引され半導
電性aA電体2に密イlする。同トpにスイッチS2を
開き、スイッチS1を閉し°ζ固定電4句87と司・1
!IJ電極乏(の間に電11を印加′・1゛ると+IJ
動′市々’rA 11 C,f固χじ′電極7に吸引サ
レ、゛し’、! di (’L 誘di体Iに密6′す
る。
When the force of such a configuration is injected into I2 (for example, switch 7 is opened, switch S2 is closed and ζrti pole) (and tllI is applied between I- and 9), Jol+n5en-Ral+bek)
As a result, an attractive force due to electrostatic force acts between these electrodes, and i
+J motion'Ichigoku 8 is fixed? , 1i4449 and close to the semiconductive aA electric body 2. At the same time, open switch S2 and close switch S1.
! When the IJ electrode is depleted (applying a voltage of 11 between
Dynamic 'C' rA 11 C, f Fixed ' There is suction on the electrode 7, ',! di ('L 6' densely attached to di-substance I.

1−1述したスイ7・チSt、 S2の開閉による司勅
rli+小の応答は従来のバルブに比べて極め−(1士
い。
1-1 The response of switch 7, switch 7, and switch S2 to opening and closing due to the opening and closing of switch 7 and S2 is extremely small compared to conventional valves.

次に上記カス注入バルブ■2によイJプラスマ×わ−発
生装置の動作を説明すると、先ずスイッチS2を閉しス
イッチS1を開いて可動電極8を半導電性銹′電体2に
密着させ、チャンバ5内の真空排気を行っ。続いてスイ
ッチS1を閉しスイッチS2を開いてμJ ”J’JJ
電4!!ij 8を半導電性誘電体I1.″、密着させ
、例えはカスボンへから供給1」10を通って供給され
たカス貯蔵室6内のカスを■1通大人4、ガス注入口1
1からチャンバ5内へ注入する。次いてスイッチS2を
閉じスイッチsiを開いて貫通穴14を基き、通油“定
められた遅延時間の後スイッチS3を閉し電It3およ
び4の間に商電圧11νをかりて放電を行い、注入ガス
をプフズマ化してX線を発仕さ一ロる。
Next, to explain the operation of the J plasma x warp generator using the above-mentioned waste injection valve 2, first close the switch S2, open the switch S1, and bring the movable electrode 8 into close contact with the semiconductive electric body 2. , the chamber 5 is evacuated. Next, close switch S1 and open switch S2 to obtain μJ ”J'JJ
Electric 4! ! ij 8 as a semiconducting dielectric I1. For example, the waste in the waste storage chamber 6 supplied from the gas supply 1 through the gas supply port 1 to the gas supply port 1 is placed in close contact with the
1 into the chamber 5. Next, switch S2 is closed, switch si is opened, and the through hole 14 is filled with oil. It turns the gas into Pfusuma and emits X-rays.

ところで−1−:、記カス注入バルフの動作は、静電力
によるためハルツ開閉の応答速度が速く、その結果開閉
に要する時間および放電までの遅延時間をIIIl、!
性良く制御てきる。な、!3X線発41−に使用さコ1
゜ノこカスは装置の図に見てトカから1ノ1気される。
By the way, -1-: Since the operation of the waste injection valve described above is based on electrostatic force, the response speed of Harz opening and closing is fast, and as a result, the time required for opening and closing and the delay time until discharge are reduced.
It can be controlled well. What! 3 Used for X-ray emission 41-1
゜Nokokasu was impressed by Toka when he saw the diagram of the device.

第2図し:1本発明の第2の実施例を説明゛4゛るため
のゾラスマX線発生装置要ull o〕lli而し1で
、図に1?い−(符号25 Let一部のの小される↓
°シ空チートンハ、2(3はカス貯蔵室、28はカス注
入に1.29はカス!1j!藏室26へのカス供給l」
を示す。
Figure 2: 1 Required Zolasma X-ray generator for explaining the second embodiment of the present invention. (Code 25 Let some of them be small ↓
2 (3 is the waste storage room, 28 is for waste injection, 1.29 is waste! 1j! Waste supply to the storage room 26)
shows.

ガス貯蔵室26内に設けられるガス注入バルブ20は、
半導電I11誘電体2■を設りた固定電極22と絶糾1
(1支柱30にハネ27で(呆楯されノこi+J+71
X極23構成される。可動電極23は真空ナヤンハ25
のカス注入口2)3の設りられた凹)41りに入る凸部
23J〕がある形状とし、当該凸+’1i23aはハイ
27の力によりガス注入[」2Bの周囲に配設されたO
リンク24を叩え伺りて真空1.J 止をtiう。、B
空ナヤンハ25内へのカスの注入は、スイッチS4を閉
して電極22と23の間に市川を印加することにより可
動電極23を固定電極22側に吸着しカスtト人(12
Bを開く、二ともこよっ一1liう。
The gas injection valve 20 provided in the gas storage chamber 26 is
Fixed electrode 22 with semiconducting I11 dielectric 2
(1 post 30 with 27 springs (lol) I + J + 71
The X-pole 23 is configured. The movable electrode 23 is a vacuum nayanha 25
The shape has a convex part 23J] that enters the concave part 41 where the waste injection port 2)3 is provided, and the convex part 23A is arranged around the gas injection part 2B by the force of the high 27. O
Hit the link 24 and get the vacuum 1. J Stop. , B
In order to inject the scum into the empty Nayanha 25, the movable electrode 23 is attracted to the fixed electrode 22 side by closing the switch S4 and applying an electric current between the electrodes 22 and 23.
Open B.

そしてスイッチS4を14ひ開くと111!lす+71
X極23はハネ270力により1・降し注入1128を
l’−J Il・I−る。
Then, when switch S4 is opened 14 times, it becomes 111! ls+71
The X pole 23 injects 1128 by the force of the spring 270.

以上説明した第2犬施例6.二おい(J)第1の実施例
と同様に速いj心性j1度を達成Cきイ)。
Second dog example 6 explained above. Nioi (J) Achieved a fast J1 degree as in the first example.

次に本発明の第;3の実施例を;イ冒(121を才さj
jjj l、 (I説明する。
Next, the third embodiment of the present invention will be described.
jjjj l, (I explain.

第3図はゾッス−!×わd発イ1装置す11部の1す]
面図(、室、37はガスlL人に1.38はカス供給1
」を、また1′、17j、4Qは本実施例に係わるガス
注入バルブを示す。
Figure 3 is creepy! × 1 device, 11 parts, 1 unit]
Top view (, chamber, 37 is gas lL person 1.38 is waste supply 1
'', and 1', 17j, and 4Q indicate gas injection valves according to this embodiment.

カス注入バルブ40は絶縁性支柱39で保持されに固定
電極32、固定電極32に取りイ′:]げられた半導電
性dカミ体3Iとガス注入[137を封環する磁性体で
形成されたaJ動電極33および可動電極$3を引きつ
りる電磁、石川コイル34からなる構成である。
The waste injection valve 40 is held by an insulating column 39, and is formed of a magnetic material that seals the fixed electrode 32, the semiconductive d-shaped body 3I which is attached to the fixed electrode 32, and the gas injection valve 137. The structure consists of an electromagnetic Ishikawa coil 34 that pulls the aJ moving electrode 33 and the moving electrode $3.

か力ぐる構成のガス注入バルブ40におF−乙スイソチ
S6を開き、スイレナS5を閉じた状態とするとijJ
動電極電極33:1イル34に引き寄せられガス注入1
」37を封止する。逆にスイッチS6を閉じてスイッチ
S5を開くとi’iJ動電極33ば固定電極32に引き
寄せられ半7D電性A3’l電体31に吸着する。
When F-Osuisochi S6 is opened in the gas injection valve 40 having a force-pull configuration, and water lily S5 is closed, ijJ
Dynamic electrode electrode 33: Gas injected by being attracted to the 1-il 34
” 37 is sealed. Conversely, when the switch S6 is closed and the switch S5 is opened, the i'iJ moving electrode 33 is attracted to the fixed electrode 32 and adsorbed to the semi-7D conductive A3'l electric body 31.

1グ十4:実施例におい“2は可・l1lj・電極33
の開閉連り1によりカス41人1’−!’37から直空
ナヤンハ35内へガスを注入j−るごと力;で中る。な
才、9スイッチS5およびS6の開部を同期し□”ζ行
うごともでき、かくするごとによりカスdユ、% IJ
 3←う開閉を、より円li’iに行うごとかてき・乙
。 ″ □ ところで本発明に係わるカス注入バルブは、ブー)スマ
X線発件装置に限らず、カス1.l二人タイミングが重
視される伯の装置i’+:においても用いられうるちの
である。
1g14: In the example, “2 is possible, l1lj, electrode 33
Due to opening and closing series 1, 41 people lost 1'-! Gas is injected into the direct air Nayanha 35 from '37 and inserted with full force. In addition, it is also possible to synchronize the opening of 9 switches S5 and S6 and perform □"ζ, thereby reducing the amount of damage and % IJ.
3←It is like opening and closing in a more circular manner. '' □ By the way, the waste injection valve according to the present invention can be used not only in the Bu) SM X-ray emission device, but also in the Haku equipment i'+: where timing for two people is important. .

(7)発明の効果 以J:: R’f細に説明したように木、発明によれは
、プラスマス線発生装置?)1において真空チャンバ内
へのカス注入と主放電とのタイミング制御が再現性良く
できるため、常時安定したプラスマX線源の提供に効世
人である。
(7) Effects of the invention J:: R'f As explained in detail, is the invention a positive mass ray generator? ) In 1, the timing control of the dregs injection into the vacuum chamber and the main discharge can be controlled with good reproducibility, so it is useful for providing a constantly stable plasma X-ray source.

【図面の簡単な説明】[Brief explanation of the drawing]

、第1図、第2図および第3図は本発明実施例にj、糸
わるブラスマX線発生装置要1(11の101而し1″
(ある。 s、 2.21.31 半導電性、iプう7h体、3,
4放′市川11I’ハ、5 + 25+ J5 真91
′−十ヤンハ、G、 26.36 カス!11′藏室、
7. !1.22.32固定111極、8.23.33
 11Jリリ」市4゛1λ、【帆29.38 カス供給
L1、++、 z)+:胃(7ガス注入し1.12.2
0. 、l(l カス〆「人ハルツ、13、27.39
 支柱、27 ハネ、(3471i爾イ、1川コイル 第1図 第2図 第3図
, FIG. 1, FIG. 2, and FIG. 3 show an embodiment of the present invention.
(There is. s, 2.21.31 semiconducting, ipu7h body, 3,
4 air'Ichikawa 11I'ha, 5 + 25+ J5 true 91
'-10 Yanha, G, 26.36 Kass! 11' Kuramuro,
7. ! 1.22.32 fixed 111 poles, 8.23.33
11J Lili'' City 4゛1λ, [Sail 29.38 Kas supply L1, ++, z) +: Stomach (7 gas injected 1.12.2
0. , l
Strut, 27 Hane, (3471i, 1 river coil Figure 1 Figure 2 Figure 3

Claims (1)

【特許請求の範囲】 (1)カスタイブプラス゛7X線発生装置にして、カス
貯蔵室と真空チャンバをつなくカス注入バルブは当該バ
ルブを封止する可動電極と、当該可動電極に対向し゛ζ
配設され対向面に半導電性誘電体を設りた固定電極、お
よび上記可動tU極と固定電極間に電圧を印加する手段
とからなり、前記電圧印加手段により固定電極と可動電
極間に電圧を印加し、IJJ動電極電極定電極に吸引し
てガス注入バルブを開き、カスを真空チートンハヘ注入
する構成としノこことを特徴とするプラスマメ線発仕装
置。 (21l”導電11IHjす電体をiJ ’、l1JJ
電極に対向する而に設番ツノこ固定電極および当該固定
電極と可動電極間に′電圧を印加するす段を配設し、当
該電圧印加手段により電月二を加えることにより111
動電極を固定電極に吸引するごとによりガス注入バルブ
の封止全行・)ことを特徴とする特許請求の範囲第1項
記載のプラスマメ線発生装置。 (31iJ動電極をハイを介して保り’+シ、開口部に
はOリングを配設し、上記ハイによ/)司動?h極をO
リングに圧着することによりカス注入バルブのト1止を
行うことを特徴とするノ1z目i’F 請求の範囲第1
項記載のプラスマメ線発生装置。 (4)可動電極を併1ノ1体により形成し、当該iiJ
 lil+ ?Ii4・:ハをガス注入ハルゾ周囲に配
設した1hθクイjにより吸引゛J’るごとにより当該
バルブ月11.を行°・)ごとを11.1.徴と′J“
るl1ya’l請求の範囲第11CI記載のブラスマX
線発生装置imi+。
[Claims] (1) A custom plus 7 X-ray generator, in which the waste storage chamber and the vacuum chamber are connected, and the waste injection valve has a movable electrode that seals the valve, and a movable electrode that faces the movable electrode.
It consists of a fixed electrode provided with a semiconductive dielectric on its opposing surface, and means for applying a voltage between the movable tU pole and the fixed electrode, and the voltage applying means applies a voltage between the fixed electrode and the movable electrode. This plasma ray firing device is characterized by having a configuration in which the gas is applied to the IJJ moving electrode and the constant electrode, the gas injection valve is opened, and the dregs are injected into the vacuum chamber. (21l" conductive 11IHj electric body is iJ ', l1JJ
By arranging a fixed electrode with a fixed horn facing the electrode and a stage for applying a voltage between the fixed electrode and the movable electrode, and applying a voltage of 111 by using the voltage applying means.
2. The plasma ray generator according to claim 1, wherein the gas injection valve is completely sealed each time the movable electrode is attracted to the fixed electrode. (Keep the 31iJ moving electrode through the high '+shi, arrange an O-ring in the opening, and keep the above high/) Drive? h pole to O
No. 1z i'F characterized in that the waste injection valve is stopped by crimping the ring.Claim 1
Plasma ray generator described in section. (4) The movable electrode is formed as one body, and the iiJ
lil+? Ii4.: By sucking ゛J' with the 1hθ pipe arranged around the gas injection chamber, the corresponding valve month 11. 11.1. sign and ′J“
Blasma X as described in Claim 11CI
Line generator imi+.
JP58204003A 1983-10-31 1983-10-31 Plasma x-ray generation device Pending JPS6095840A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58204003A JPS6095840A (en) 1983-10-31 1983-10-31 Plasma x-ray generation device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58204003A JPS6095840A (en) 1983-10-31 1983-10-31 Plasma x-ray generation device

Publications (1)

Publication Number Publication Date
JPS6095840A true JPS6095840A (en) 1985-05-29

Family

ID=16483161

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58204003A Pending JPS6095840A (en) 1983-10-31 1983-10-31 Plasma x-ray generation device

Country Status (1)

Country Link
JP (1) JPS6095840A (en)

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