JPS6091528A - Field emitter consisting of transition metal compound - Google Patents

Field emitter consisting of transition metal compound

Info

Publication number
JPS6091528A
JPS6091528A JP58199605A JP19960583A JPS6091528A JP S6091528 A JPS6091528 A JP S6091528A JP 58199605 A JP58199605 A JP 58199605A JP 19960583 A JP19960583 A JP 19960583A JP S6091528 A JPS6091528 A JP S6091528A
Authority
JP
Japan
Prior art keywords
transition metal
field emitter
emitter
metal compound
electron beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58199605A
Other languages
Japanese (ja)
Other versions
JPH0441452B2 (en
Inventor
Yoshio Ishizawa
石沢 芳夫
Chuhei Oshima
忠平 大島
Shigeki Otani
茂樹 大谷
▲そ▼右田 龍太郎
Ryutaro Soda
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
National Institute for Research in Inorganic Material
Original Assignee
National Institute for Research in Inorganic Material
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by National Institute for Research in Inorganic Material filed Critical National Institute for Research in Inorganic Material
Priority to JP58199605A priority Critical patent/JPS6091528A/en
Publication of JPS6091528A publication Critical patent/JPS6091528A/en
Publication of JPH0441452B2 publication Critical patent/JPH0441452B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02Main electrodes
    • H01J1/30Cold cathodes, e.g. field-emissive cathode
    • H01J1/304Field-emissive cathodes

Abstract

PURPOSE:To obtain an emitter with stable high brightness by introducing nitrogen and/or oxygen into a carbon cavity of a transition metal carbide for being subjected to solid resolution. CONSTITUTION:The axial azimuth of a field emitter consisting of a transition metal compound, in which a chemical composition of the material is to be shown by a general formula MCXNYOZ (In the formula, M denotes a solid solution onsisting of a single or not less than two kinds of the transition metals of the families IV a, V a and VI a, 0.5<=x+y+z<=1, 0.5<=x<=1, 0<=y<=0.5, 0<=z<=0.5) is made <110> + or -10 deg., while the direction of a radiant electron beam is made into the emitter axial azimuth. Thereby, the pattern center part is extremely bright thus being able to obtain the field emitter having the stable radiant properties.

Description

【発明の詳細な説明】 本発明は電子ビーム露光機、高輝度電子ビーム利用機器
等に使用するフィールド・エミッターに関する。
DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a field emitter used in electron beam exposure machines, high-intensity electron beam utilization equipment, and the like.

フィールド・エミッターからのエミッション電流は輝度
が大きく、放射電子のエネルギー幅が小(1) 艇l<、しかも点光源に近いなどの優れた特長を持って
いる。
The emission current from the field emitter has high brightness, the energy width of the emitted electrons is small (1), and it has excellent features such as being close to a point light source.

従来、フィールド・エミッター材料としては、タングス
テンが実用化されているが遷移金属炭化物はタングステ
ンよりも仕事関数が小さく、且つ残留気体との反応に不
活性であるため、電子放射材料としての応用が期待され
ている。遷移金属炭化物MCX(ただし、Mは遷移金属
を表わす)ではの原因になっていることが判ったため本
発明者らはこの炭素空孔を減少させる方法について研究
の結果、炭素空孔に窒素及びまたは酸素を導入固溶させ
ることによって、減少し得られ、これKより安定な高輝
度フィールド・エミッターを得ることに成功した。
Conventionally, tungsten has been put into practical use as a field emitter material, but transition metal carbides have a smaller work function than tungsten and are inert to reactions with residual gas, so they are expected to be used as electron emitting materials. has been done. In the transition metal carbide MCX (where M represents a transition metal), the present inventors researched a method for reducing carbon vacancies, and found that nitrogen and/or By introducing oxygen into a solid solution, we succeeded in obtaining a high-luminance field emitter that was reduced and more stable than K.

この化学組成は、一般式 MCxNy02(タタシ・M
ハII/a・Va 、 Va族の遷移金属の単(2) ;゛桂掬たは2種以上の固溶物、0.5 <、x + 
y+ z<1.0.5くxく1、Oくyく0.5、Oり
z <0.5で示される遷移金属化合物である。
This chemical composition has the general formula MCxNy02 (Tatashi・M
Ha II/a・Va, Va group transition metal single (2); ゛Katsura or solid solution of two or more types, 0.5 <, x +
It is a transition metal compound represented by y+z<1.0.5, 0.5, and z<0.5.

前記遷移金属の具体的金属としては、Ti5Zr。A specific example of the transition metal is Ti5Zr.

If、V、Nb XTa −Mo % W及びこれらの
固溶物である。
If, V, Nb XTa-Mo%W and solid solutions thereof.

ところが、(001)、(111)エミッターでは、第
1図(a) (b)のエミッションパターン(illf
fl(a)ハ(001)、第2図は(111)を示す。
However, for (001) and (111) emitters, the emission pattern (illf
fl(a) shows (001), and FIG. 2 shows (111).

)に示すよ上好ましくない。) is not desirable.

本発明はパターン中心部が明るいフィールド・エミッタ
ーを提供せんとするものである。
The present invention seeks to provide a field emitter in which the center of the pattern is bright.

本発明者らはこの目的を達成すべく研究の結果、エミッ
ター軸方向に電子ビームを放射し、エミッションパター
ンの中心部を明るくするには、第1図(C)に示すよう
なエミッションパターンを有する(110)エミッター
を用いるのがよいことが分つ±。
As a result of research to achieve this objective, the present inventors have found that in order to emit an electron beam in the emitter axis direction and brighten the center of the emission pattern, an emission pattern as shown in Figure 1 (C) is required. It turns out that it is better to use a (110) emitter.

すなわち、炭化物(例えばTie )単結晶の表面研究
から、炭化物では(001)面と(111)面が表面エ
ネルギーが小さく、面の発達しやすい安定な面であり、
先端径0.1μmチップが高温で加熱されると、チップ
先端は(001)面と(111)面とが発達し、これら
の面によって囲まれる。第2第2図(a)の電界強度の
大きい局所部分(稜線の集合した一点)から電子放射が
起っていることが分った。
That is, from research on the surface of single crystals of carbides (for example, Tie), it has been found that in carbides, the (001) and (111) planes have low surface energy and are stable planes that easily develop.
When a chip with a tip diameter of 0.1 μm is heated at a high temperature, (001) and (111) planes develop at the tip and are surrounded by these planes. It was found that electron emission occurred from a local area (a point where the ridge lines were gathered) where the electric field intensity was large as shown in Fig. 2(a).

このことは<111>エミッターでも同じである。The same is true for <111> emitters.

従って、エミッション電流を、エミッター軸方位(真下
)に取シ出すには、第2図(b)に示すように、チップ
の最先端で強い電界強度がとられるように設計すればよ
いことがわかる。
Therefore, it can be seen that in order to extract the emission current in the direction of the emitter axis (directly below), the design should be designed so that a strong electric field strength is obtained at the leading edge of the chip, as shown in Figure 2 (b). .

i;ハ11;このようなチップの最先端で強い電界強度
を得るには第2図(b)からもわかるように、(110
)チップのみで実現し得られることが分った。
i; C11; In order to obtain a strong electric field strength at the leading edge of such a chip, (110
) It turns out that this can be realized and obtained only with chips.

そして、〈110〉チップを使用したフィールド・エミ
ッターのエミッションパターンij:第111(c)に
示す通り、中心部に電子ビームが出ておシ、その周囲に
4つの輝点を有するものとなる。
As shown in the emission pattern ij of the field emitter using the <110> chip: No. 111(c), an electron beam is emitted at the center and four bright spots are formed around it.

これらの知見に基いて本発明を完成した。The present invention was completed based on these findings.

本発明の要旨は、材料の化学組成を一般式ミツターの軸
方位を(110)±10°にし、放射電子ビームの方向
をエミッター軸方位にしたことを特徴とする遷移金属化
合物からなるフィールド・エミッターにある。
The gist of the present invention is to provide a field emitter made of a transition metal compound, characterized in that the chemical composition of the material is such that the axial orientation of the general formula Mitter is (110) ±10°, and the direction of the emitted electron beam is the emitter axial orientation. It is in.

本発明におけるフィールド・エミッターの軸方(5) E45を(110)の方位をした場合が最も好ましいが
、真下に放射される電子ビームは或幅を持っているので
、±10°の範囲では同じ効果が得られる。しかし、こ
れをはずれるとその目的を達成し得なく々る。
The axial direction of the field emitter in the present invention (5) It is most preferable to have E45 in the (110) direction, but since the electron beam emitted directly below has a certain width, it is the same within a range of ±10°. Effects can be obtained. However, if you deviate from this, you will not be able to achieve your purpose.

実施例 T1Co、96No、。。20o、。3〈110〉フィ
ールド・エミッターからのエミッションパターンh M
 1 tffl(c)の通υであり、電流雑音も0.2
%以下、電流変動も温度1000℃、真空度8 X 1
0 Torr 、印加電圧1980 V、エミツション
電流1μ八〇以上のように、本発明のフィールド・エミ
ッターによると、パターン中心部が極めて明るく、しか
もN1及び(−!たは)0を固溶させた遷移金属炭化物
をエミッター材料として使用するため、電流雑音も0.
2%以下、電流変動も−0,04%/Ihr 、。
Example T1Co, 96No. . 20 o. 3〈110〉 Emission pattern from field emitter h M
1 tffl(c) is υ, and the current noise is also 0.2
% or less, current fluctuations at 1000°C, vacuum level 8 x 1
According to the field emitter of the present invention, the center of the pattern is extremely bright, as shown by 0 Torr, applied voltage of 1980 V, and emission current of 1 μ80 or more, and also has a transition state in which N1 and (-! or) 0 are dissolved in solid solution. Since metal carbide is used as the emitter material, current noise is also 0.
2% or less, current fluctuation is -0.04%/Ihr.

以下の安定な放射特性を有する効果を奏し得4τλj゛
;(g 1’!(−”’・−1;゛
It has the effect of having the following stable radiation characteristics.

【図面の簡単な説明】[Brief explanation of drawings]

第1図ハMCxNyOzフィールド・エミッターからの
エミッションパターン図を示す。X印は中心位置を示す
。 第1図(a)はMCXNyo2<001〉のエミッショ
ンパターン、 第1図(b)はMCxNyO□<111〉のエミッショ
ンパターン、 第1図(c)はMOxNyO2〈110〉のエミツショ
ンバ第2図(a)は(001)チップの先端形状、第2
図ら)は(110)チップの先端形状。 (7) 茶 1 図 園 し 第 2 139−
FIG. 1 shows an emission pattern diagram from the MCxNyOz field emitter. The X mark indicates the center position. Fig. 1(a) shows the emission pattern of MCXNyo2<001>, Fig. 1(b) shows the emission pattern of MCxNyO□<111>, and Fig. 1(c) shows the emission pattern of MOxNyO2<110> Fig. 2(a). is (001) the tip shape of the tip, the second
(Figures) show the tip shape of the (110) tip. (7) Tea 1 Zuen Shi No. 2 139-

Claims (1)

【特許請求の範囲】[Claims] 1 材料の化学組成を一般式MOxNyO,(式中、M
はN、、Vユ、Va族の遷移金属の単独または2種以上
の固溶物、0.5りx+y+z<1 、0.5<:xく
1 、oくy<o、s 、O<:zく0.5、を表わす
)で示される遷移金属化合物からなるフィールド・エミ
ッターの軸方(1<110>±10°にし、放射電子ビ
ームの方向をエミッター軸方位にしたことを特徴とする
遷移金属化合物からなるフィールド・エミッター。
1 The chemical composition of the material is expressed by the general formula MOxNyO, (where M
is N, V, solid solution of Va group transition metals alone or two or more, 0.5x+y+z<1, 0.5<:x1, y<o, s, O< The field emitter is made of a transition metal compound represented by 1<110>±10°, and the direction of the emitted electron beam is the emitter axis. A field emitter made of transition metal compounds.
JP58199605A 1983-10-25 1983-10-25 Field emitter consisting of transition metal compound Granted JPS6091528A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58199605A JPS6091528A (en) 1983-10-25 1983-10-25 Field emitter consisting of transition metal compound

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58199605A JPS6091528A (en) 1983-10-25 1983-10-25 Field emitter consisting of transition metal compound

Publications (2)

Publication Number Publication Date
JPS6091528A true JPS6091528A (en) 1985-05-22
JPH0441452B2 JPH0441452B2 (en) 1992-07-08

Family

ID=16410637

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58199605A Granted JPS6091528A (en) 1983-10-25 1983-10-25 Field emitter consisting of transition metal compound

Country Status (1)

Country Link
JP (1) JPS6091528A (en)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63279535A (en) * 1987-05-08 1988-11-16 Natl Inst For Res In Inorg Mater Manufactute of carbon-nitride niobium field emitter
WO1998044527A1 (en) * 1997-04-02 1998-10-08 E.I. Du Pont De Nemours And Company Metal-oxygen-carbon field emitters
JP2003086127A (en) * 2001-09-10 2003-03-20 Toshiba Corp Electron beam device and device manufacturing method using it
US11201032B2 (en) 2016-08-08 2021-12-14 Asml Netherlands B.V. Electron emitter and method of fabricating same

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086728A (en) * 1983-10-19 1985-05-16 Natl Inst For Res In Inorg Mater Field emitter

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6086728A (en) * 1983-10-19 1985-05-16 Natl Inst For Res In Inorg Mater Field emitter

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63279535A (en) * 1987-05-08 1988-11-16 Natl Inst For Res In Inorg Mater Manufactute of carbon-nitride niobium field emitter
WO1998044527A1 (en) * 1997-04-02 1998-10-08 E.I. Du Pont De Nemours And Company Metal-oxygen-carbon field emitters
JP2001519076A (en) * 1997-04-02 2001-10-16 イー・アイ・デユポン・ドウ・ヌムール・アンド・カンパニー Metal-oxygen-carbon field emitter
US6376973B1 (en) 1997-04-02 2002-04-23 E. I. Du Pont De Nemours And Company Metal-oxygen-carbon field emitters
JP2003086127A (en) * 2001-09-10 2003-03-20 Toshiba Corp Electron beam device and device manufacturing method using it
US11201032B2 (en) 2016-08-08 2021-12-14 Asml Netherlands B.V. Electron emitter and method of fabricating same
US11688579B2 (en) 2016-08-08 2023-06-27 Asml Netherlands B.V. Electron emitter and method of fabricating same

Also Published As

Publication number Publication date
JPH0441452B2 (en) 1992-07-08

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