JPS6090860U - semiconductor equipment - Google Patents
semiconductor equipmentInfo
- Publication number
- JPS6090860U JPS6090860U JP18279183U JP18279183U JPS6090860U JP S6090860 U JPS6090860 U JP S6090860U JP 18279183 U JP18279183 U JP 18279183U JP 18279183 U JP18279183 U JP 18279183U JP S6090860 U JPS6090860 U JP S6090860U
- Authority
- JP
- Japan
- Prior art keywords
- layer
- carrier concentration
- conductivity type
- semiconductor equipment
- gaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Landscapes
- Junction Field-Effect Transistors (AREA)
Abstract
(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.
Description
第１図及び第２図は従来例を示す断面図、第３図Ａ乃至
Ｃは本考案の一実施例及びその製造方法を示す工程別断
面図である。
１４・・・・・・第２クラッド層（第１層）、１５・・
・・・・第１キャップ層（第２層）、１６・・・・・・
狭窄層（第３層）、１７・・・・・・開孔、１８・・・
・・・第２キャップ層（第４層）。1 and 2 are sectional views showing a conventional example, and FIGS. 3A to 3C are sectional views showing one embodiment of the present invention and its manufacturing method by step. 14... Second cladding layer (first layer), 15...
...First cap layer (second layer), 16...
Constriction layer (third layer), 17...Open hole, 18...
...Second cap layer (fourth layer).
Claims (2)
層、該第１層上に積層され第１の導電型を有し低キヤリ
ア濃度のＧａＡｓからなる第２層、該第２層上に積層き
れると共に開孔が形成され、第２の導電型を有し、かつ
上記第２層と略同−の物理的特性を有する第３層、上記
開孔より露出した第２層上に積層され第１の導電型を有
すると共に上記第２層より大なるキャリア濃度を有する
ＧａＡｓからなる第４層を具備したことを特徴とする半
導体装置。(1) A first layer made of GaAlAs having a first conductivity type.
a second layer made of GaAs with a first conductivity type and a low carrier concentration; and a third layer having substantially the same physical properties as the second layer, which is laminated on the second layer exposed through the opening and has a first conductivity type and is larger than the second layer. A semiconductor device comprising a fourth layer made of GaAs having a carrier concentration.
ャリア濃度は３〜５×１０１７／ｃＩ！であり、かつ第
４層のキャリア濃度は５×１α８／Ｃｆ１以上であるこ
とを特徴とする半導体装置。(2) Utility model registration The carrier concentration of the second layer described in claim 1 is 3 to 5 x 1017/cI! A semiconductor device characterized in that the fourth layer has a carrier concentration of 5×1α8/Cf1 or more.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18279183U JPS6090860U (en) | 1983-11-25 | 1983-11-25 | semiconductor equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP18279183U JPS6090860U (en) | 1983-11-25 | 1983-11-25 | semiconductor equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6090860U true JPS6090860U (en) | 1985-06-21 |
Family
ID=30395770
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP18279183U Pending JPS6090860U (en) | 1983-11-25 | 1983-11-25 | semiconductor equipment |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6090860U (en) |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58176991A (en) * | 1982-04-09 | 1983-10-17 | Sanyo Electric Co Ltd | Semiconductor laser |
-
1983
- 1983-11-25 JP JP18279183U patent/JPS6090860U/en active Pending
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS58176991A (en) * | 1982-04-09 | 1983-10-17 | Sanyo Electric Co Ltd | Semiconductor laser |
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