JPS6086187A - 半導体ウエ−ハ研摩用砥粒 - Google Patents
半導体ウエ−ハ研摩用砥粒Info
- Publication number
- JPS6086187A JPS6086187A JP58193625A JP19362583A JPS6086187A JP S6086187 A JPS6086187 A JP S6086187A JP 58193625 A JP58193625 A JP 58193625A JP 19362583 A JP19362583 A JP 19362583A JP S6086187 A JPS6086187 A JP S6086187A
- Authority
- JP
- Japan
- Prior art keywords
- particles
- fine particles
- purity
- sio2
- particle size
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000004065 semiconductor Substances 0.000 title claims description 9
- 239000003082 abrasive agent Substances 0.000 title abstract description 4
- 239000002245 particle Substances 0.000 claims abstract description 30
- 239000006061 abrasive grain Substances 0.000 claims abstract description 14
- 239000005350 fused silica glass Substances 0.000 claims abstract description 9
- 239000000843 powder Substances 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims abstract description 5
- 239000003513 alkali Substances 0.000 claims abstract description 3
- 238000005498 polishing Methods 0.000 claims description 15
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract description 17
- 239000010419 fine particle Substances 0.000 abstract description 6
- 239000012670 alkaline solution Substances 0.000 abstract description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract description 2
- 229910052681 coesite Inorganic materials 0.000 abstract 4
- 229910052906 cristobalite Inorganic materials 0.000 abstract 4
- 239000000377 silicon dioxide Substances 0.000 abstract 4
- 235000012239 silicon dioxide Nutrition 0.000 abstract 4
- 229910052682 stishovite Inorganic materials 0.000 abstract 4
- 229910052905 tridymite Inorganic materials 0.000 abstract 4
- 238000010298 pulverizing process Methods 0.000 abstract 1
- 235000012431 wafers Nutrition 0.000 description 11
- 239000000243 solution Substances 0.000 description 6
- 239000013078 crystal Substances 0.000 description 5
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 2
- 239000002270 dispersing agent Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- 150000007513 acids Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- DIZPMCHEQGEION-UHFFFAOYSA-H aluminium sulfate (anhydrous) Chemical compound [Al+3].[Al+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O DIZPMCHEQGEION-UHFFFAOYSA-H 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 238000011109 contamination Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000002349 favourable effect Effects 0.000 description 1
- 230000003301 hydrolyzing effect Effects 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
Landscapes
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193625A JPS6086187A (ja) | 1983-10-17 | 1983-10-17 | 半導体ウエ−ハ研摩用砥粒 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58193625A JPS6086187A (ja) | 1983-10-17 | 1983-10-17 | 半導体ウエ−ハ研摩用砥粒 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6086187A true JPS6086187A (ja) | 1985-05-15 |
| JPH0238115B2 JPH0238115B2 (cs) | 1990-08-29 |
Family
ID=16311047
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58193625A Granted JPS6086187A (ja) | 1983-10-17 | 1983-10-17 | 半導体ウエ−ハ研摩用砥粒 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6086187A (cs) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767016A (en) * | 1994-07-27 | 1998-06-16 | Sony Corporation | Method of forming a wiring layer on a semiconductor by polishing with treated slurry |
| JP2017105980A (ja) * | 2015-09-25 | 2017-06-15 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | ストップ‐オンシリコンコーティング層添加剤 |
-
1983
- 1983-10-17 JP JP58193625A patent/JPS6086187A/ja active Granted
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5767016A (en) * | 1994-07-27 | 1998-06-16 | Sony Corporation | Method of forming a wiring layer on a semiconductor by polishing with treated slurry |
| KR100402931B1 (ko) * | 1994-07-27 | 2004-01-13 | 소니 가부시끼 가이샤 | 배선층표면연마용의슬러리와이슬러리를이용하는반도체장치의제조방법 |
| JP2017105980A (ja) * | 2015-09-25 | 2017-06-15 | エア プロダクツ アンド ケミカルズ インコーポレイテッドＡｉｒ Ｐｒｏｄｕｃｔｓ Ａｎｄ Ｃｈｅｍｉｃａｌｓ Ｉｎｃｏｒｐｏｒａｔｅｄ | ストップ‐オンシリコンコーティング層添加剤 |
| US10144850B2 (en) | 2015-09-25 | 2018-12-04 | Versum Materials Us, Llc | Stop-on silicon containing layer additive |
| JP2019049008A (ja) * | 2015-09-25 | 2019-03-28 | バーサム マテリアルズ ユーエス，リミティド ライアビリティ カンパニー | ストップ‐オンシリコンコーティング層添加剤 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0238115B2 (cs) | 1990-08-29 |
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