JPS6084751A - Photoelectric conversion device - Google Patents

Photoelectric conversion device

Info

Publication number
JPS6084751A
JPS6084751A JP19278583A JP19278583A JPS6084751A JP S6084751 A JPS6084751 A JP S6084751A JP 19278583 A JP19278583 A JP 19278583A JP 19278583 A JP19278583 A JP 19278583A JP S6084751 A JPS6084751 A JP S6084751A
Authority
JP
Japan
Prior art keywords
photoelectric conversion
amplification circuit
conversion device
arithmetic
noise
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP19278583A
Other languages
Japanese (ja)
Inventor
Shuji Tamaru
修治 田丸
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Panasonic Holdings Corp
Original Assignee
Matsushita Electric Industrial Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Matsushita Electric Industrial Co Ltd filed Critical Matsushita Electric Industrial Co Ltd
Priority to JP19278583A priority Critical patent/JPS6084751A/en
Publication of JPS6084751A publication Critical patent/JPS6084751A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J40/00Photoelectric discharge tubes not involving the ionisation of a gas
    • H01J40/02Details
    • H01J40/14Circuit arrangements not adapted to a particular application of the tube and not otherwise provided for

Landscapes

  • Photometry And Measurement Of Optical Pulse Characteristics (AREA)
  • Light Receiving Elements (AREA)

Abstract

PURPOSE:To increase gain of amplification circuit and decrease effect of noise by forming a photoelectric conversion device by combining a photoelectric conversion unit and an arithmetic amplification circuit in a vacuum glass tube. CONSTITUTION:A photoelectric conversion device is formed by accommodating a photoelectric conversion unit comprising a photoelectric cathode 2 and an anode 1 and an arithmetic amplification circuit comprising an arithmetic amplification unit 3, a feedback resistance 4, and a load resistance 5 into a vacuum glass tube 10. Since the photoelectric conversion unit 1 and 2, and the arithmetic amplification circuit 3-5 are closely arranged in the vacuum tube, leak current caused by humidity and effect of noise from the outside are reduced and gain of amplification circuit are increased to obtain steady amplification. Therefore, high sensitive photoelectric conversion device can be obtained.

Description

【発明の詳細な説明】 産業上の利用分野 本発明は光の検出、計測などに使用する光電変換素子に
関するものである。
DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to a photoelectric conversion element used for light detection, measurement, etc.

従来例の構成とその問題点 光電変換素子には多くの種類があるが、微弱な光を計測
するためには光電子増倍管が多く用いられている。とこ
ろが光電子増倍管には安定な高圧電源が必要であること
、周囲の磁気、ノイズ、湿度などの影響を受けやすいこ
となどから環境の悪い場所での使用には不向きである。
Conventional Structures and Problems There are many types of photoelectric conversion elements, but photomultiplier tubes are often used to measure weak light. However, photomultiplier tubes require a stable high-voltage power source and are easily affected by surrounding magnetism, noise, humidity, etc., making them unsuitable for use in harsh environments.

光電管や半導体の光電変換素子を用いる場合には高圧電
源は不用であるが、感度が低いため、微弱な光を計測す
るにはゲインの高い増幅回路が必要である。ところがゲ
インを高くすると周囲のノイズの影響やリーク電流の影
響を受けやすくなるという問題があり、環境の悪い場所
での使用は困難である。
When using a phototube or a semiconductor photoelectric conversion element, a high-voltage power supply is not required, but since the sensitivity is low, a high-gain amplifier circuit is required to measure weak light. However, when the gain is increased, there is a problem in that it becomes more susceptible to the effects of surrounding noise and leakage current, making it difficult to use in places with poor environments.

発明の目的 本発明は前記従来の問題に留意し、環境の悪い場所でも
安定した出力の得られる高感度の光電変換素子を提供す
ることを目的としたものであるθ発明の構成 前記目的を達成するため、本発明は真空のガラス管内に
光電変換部と演算増幅回路を一体にして設けた構成とし
、光電変換部の出力電流を周囲のノイズや、リーク電流
の影響を受けずに安定して増幅し、外部に出力する光電
変換素子である0実施例の説明 以下本発明の一実施例を図面にもとづき説明する。
OBJECTS OF THE INVENTION The present invention takes into account the above-mentioned conventional problems and aims to provide a highly sensitive photoelectric conversion element that can provide stable output even in places with poor environments. Therefore, the present invention has a structure in which a photoelectric conversion section and an operational amplifier circuit are integrated in a vacuum glass tube, and the output current of the photoelectric conversion section is stabilized without being affected by surrounding noise or leakage current. DESCRIPTION OF EMBODIMENT 0 EMBODIMENT OF THE INVENTION An embodiment of the photoelectric conversion element which amplifies and outputs to the outside will be described below with reference to the drawings.

図において1は陽極光電変換部を形成している。In the figure, 1 forms an anode photoelectric conversion section.

3は演算増幅器、4は帰環抵抗、6は負荷抵抗である。3 is an operational amplifier, 4 is a return resistance, and 6 is a load resistance.

それらは真空中に置かれており、かつ光電変換部と近接
した構成となっている。
They are placed in a vacuum and are configured close to the photoelectric conversion section.

6.7.E%、9は外部との接続用のピンで、6は正の
電源供給用、7は出力用、8はグランド、9は負の電源
供線用である。10は外管(ガラス管)で、その内部は
真空に保たれている。
6.7. E%, 9 is a pin for connection with the outside, 6 is for positive power supply, 7 is for output, 8 is ground, and 9 is for negative power supply. 10 is an outer tube (glass tube), the inside of which is kept in vacuum.

上記構成において、光が入射すると充電陰極2より光電
子を放出し陽極1との間に光電流を生じる。すなわち光
電変換を行う。前記陽極1と光電陰極2で構成される光
電変換部に対し、演算増幅器3、帰環抵抗4、負荷抵抗
5は近接し、かつ真空中におかれているから、湿度など
−が原因で発生しやすいリーク電流や、外部からのノイ
ズの影響も少なく、安定した増幅が可能である。
In the above configuration, when light is incident, photoelectrons are emitted from the charging cathode 2 and a photocurrent is generated between the charging cathode 2 and the anode 1. In other words, it performs photoelectric conversion. Since the operational amplifier 3, the return resistor 4, and the load resistor 5 are placed in close proximity to the photoelectric conversion section composed of the anode 1 and the photocathode 2, and are placed in a vacuum, this may occur due to humidity, etc. It has less leakage current and less influence from external noise, allowing stable amplification.

なお光電変換部は陽極1、光電陰極2のほかにも半導体
光電変換素子を用いても同様の効果が得られる。
Note that the same effect can be obtained by using a semiconductor photoelectric conversion element in addition to the anode 1 and the photocathode 2 in the photoelectric conversion section.

発明の効果 前記実施例の説明より明らかなように本発明では、光電
変換部と増幅回路を一体にして真空中に置かれているた
め、増幅回路のゲインを大きく設定することが可能で、
周囲のノイズや湿度にも強い高感度の光電変換素子が得
られる。
Effects of the Invention As is clear from the description of the above embodiments, in the present invention, since the photoelectric conversion section and the amplifier circuit are integrated and placed in a vacuum, it is possible to set the gain of the amplifier circuit to a large value.
A highly sensitive photoelectric conversion element that is resistant to ambient noise and humidity can be obtained.

また外部から供給する電源は低電圧であり、定電圧回路
を用シ・れば電池駆動も十分可能となる。さらに光電子
増倍管のように高電圧や、高い安定性は必要でなく、そ
の価値は大きい。
In addition, the power supply supplied from the outside is low voltage, and if a constant voltage circuit is used, battery operation is also possible. Furthermore, unlike photomultiplier tubes, high voltage and high stability are not required, making them highly valuable.

【図面の簡単な説明】[Brief explanation of drawings]

図は本発明の実施例の光電変換素子の構成図である。 1・・・・・・陽極、2・・・・・・光電陰極、3・・
・・・・演算増幅器0
The figure is a configuration diagram of a photoelectric conversion element according to an embodiment of the present invention. 1...Anode, 2...Photocathode, 3...
...Operation amplifier 0

Claims (1)

【特許請求の範囲】[Claims] 光電変換部と、前記光電変換部の出力電流を増幅する演
算増幅回路とを真空の管内に具備したことを特徴とする
光電変換素子。
1. A photoelectric conversion element comprising a photoelectric conversion section and an operational amplifier circuit for amplifying the output current of the photoelectric conversion section within a vacuum tube.
JP19278583A 1983-10-14 1983-10-14 Photoelectric conversion device Pending JPS6084751A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19278583A JPS6084751A (en) 1983-10-14 1983-10-14 Photoelectric conversion device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19278583A JPS6084751A (en) 1983-10-14 1983-10-14 Photoelectric conversion device

Publications (1)

Publication Number Publication Date
JPS6084751A true JPS6084751A (en) 1985-05-14

Family

ID=16296954

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19278583A Pending JPS6084751A (en) 1983-10-14 1983-10-14 Photoelectric conversion device

Country Status (1)

Country Link
JP (1) JPS6084751A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652425A (en) * 1994-11-08 1997-07-29 Sumitomo Electric Industries, Ltd. Photoelectric conversion module with noise compensation

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5652425A (en) * 1994-11-08 1997-07-29 Sumitomo Electric Industries, Ltd. Photoelectric conversion module with noise compensation

Similar Documents

Publication Publication Date Title
US7554073B2 (en) High linearity CMOS ambient light sensor
US5644385A (en) Distance measuring device using position sensitive light detector
US3424908A (en) Amplifier for photocell
US11761817B2 (en) Optical sensor arrangement including a dummy photodiode with a well that surrounds a well of a photodiode
Fonck et al. Low‐noise photodiode detector for optical fluctuation diagnostics
JPS6084751A (en) Photoelectric conversion device
TW201939013A (en) Multi-channel detecting system
US4053847A (en) Self-feedback type low-noise charge sensitive amplifier
CN111511068B (en) Chip type photoelectric sensor and gesture recognition device
JPS59133439A (en) Semiconductor integrated photometric circuit
US6316930B1 (en) Direct current meter with passive input and galvanic insulation, particularly for high voltage
CN107064093B (en) Fluorescence spectrum measurement integrated circuit for cancer cell screening
CN216559338U (en) Photoelectric detection circuit and photoelectric detection device
JPH0330097A (en) Photoelectric smoke sensor
US5561286A (en) Scintillation probe with photomultiplier tube saturation indicator
US3351764A (en) Circuit for balancing out noise current in a photodiode using a d-c zero average waveform
JPH04184181A (en) Remaining power display device for battery
JPH0533846B2 (en)
JPH03216523A (en) Photometry circuit
JP2604132Y2 (en) Signal strength detection circuit
ATE431645T1 (en) DETECTION OF RF POWER OF AN AMPLIFIER DEVICE
JPH04269637A (en) Photoelectric conversion apparatus
SU1349671A1 (en) Photodetector device
JPS63278382A (en) Optical receiver circuit
RU2020644C1 (en) Multistage electron-flow converting device