JPS6084545A - Selenium type electrophotographic sensitive body - Google Patents

Selenium type electrophotographic sensitive body

Info

Publication number
JPS6084545A
JPS6084545A JP19368083A JP19368083A JPS6084545A JP S6084545 A JPS6084545 A JP S6084545A JP 19368083 A JP19368083 A JP 19368083A JP 19368083 A JP19368083 A JP 19368083A JP S6084545 A JPS6084545 A JP S6084545A
Authority
JP
Japan
Prior art keywords
selenium
layer
photoreceptor
potential
silver
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP19368083A
Other languages
Japanese (ja)
Other versions
JPH0217019B2 (en
Inventor
Hideki Kino
喜納 秀樹
Kiyoshi Nakato
中藤 清
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fuji Electric Co Ltd
Original Assignee
Fuji Electric Co Ltd
Fuji Electric Manufacturing Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fuji Electric Co Ltd, Fuji Electric Manufacturing Co Ltd filed Critical Fuji Electric Co Ltd
Priority to JP19368083A priority Critical patent/JPS6084545A/en
Publication of JPS6084545A publication Critical patent/JPS6084545A/en
Publication of JPH0217019B2 publication Critical patent/JPH0217019B2/ja
Granted legal-status Critical Current

Links

Classifications

    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03GELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
    • G03G5/00Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
    • G03G5/02Charge-receiving layers
    • G03G5/04Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
    • G03G5/08Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic

Landscapes

  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Photoreceptors In Electrophotography (AREA)

Abstract

PURPOSE:To improve repetition fatigue resistance characteristics by incorporating silver in a layer for participating in transfer of carriers. CONSTITUTION:A layer for participating in transfer of carriers in the photosensitive layer of a functionally separated type selenium type photosensitive body is made of selenium or an Se-Te alloy contg. 5-10<3>ppm silver. For example, a photosensitive body is prepared by vapor depositing a selenium alloy contg. 5.5wt% Te and 50ppm silver to form a carrier transfer layer, and further, vappor depositing a selenium alloy contg. 25wt% Te on this layer to form a carrier generating layer.

Description

【発明の詳細な説明】 〔発明の属する技術分野〕 本発明はセレンまたはセレン合金よりなる感光層を有す
る電子写真用感光体に関する。
DETAILED DESCRIPTION OF THE INVENTION [Field of the Invention] The present invention relates to an electrophotographic photoreceptor having a photosensitive layer made of selenium or a selenium alloy.

〔従来技術とその問題点〕[Prior art and its problems]

電子写真用セレン感光体はアルミニウム等からなる導電
性支持体上に高純度のセレンまたはセレン・テルルのよ
うなセレン合金を1×10 トル程度の真空中において
約250〜400℃の温度に加熱して蒸着することによ
って形成される。電子写真用感光体の特性としては暗時
に感光層に印加された表面電荷(帯電位)を十分に保持
し、光露光時には表面電荷が速やかに消えるのが望まし
いが、その他この帯電露光ヲくり返した時の露光後の感
光体表面電位の増加、すなわち疲労による残留電位の増
加のないことが要求される。この残留電位の高いものは
、実際の画像において地汚れ、濃度低下、ゴースト等の
現象が現われ、連続複写において画像品質の低下を来た
す。この原因として、主に光照射時に発生したキャリア
が、キャリア輸送中にトラップ単位に捕獲されることに
よる。このトラップ準位密度が高い感光体表面電位も高
く、くり返し複写を行う過程で仁の残留電位が蓄積され
、前述のような画像品質の低下を招く。
A selenium photoreceptor for electrophotography is made by heating high-purity selenium or a selenium alloy such as selenium-tellurium to a temperature of about 250 to 400°C in a vacuum of about 1 x 10 Torr on a conductive support made of aluminum or the like. It is formed by vapor deposition. As for the characteristics of an electrophotographic photoreceptor, it is desirable that the surface charge (electrostatic potential) applied to the photosensitive layer be sufficiently retained in the dark, and that the surface charge disappear quickly when exposed to light. It is required that there be no increase in the surface potential of the photoreceptor after exposure, that is, no increase in residual potential due to fatigue. If the residual potential is high, phenomena such as scumming, density reduction, and ghosting appear in actual images, and image quality deteriorates in continuous copying. This is mainly because carriers generated during light irradiation are captured in trap units during carrier transport. The surface potential of a photoreceptor with a high trap level density is also high, and in the process of repeated copying, a residual potential is accumulated on the surface of the photoreceptor, resulting in the above-mentioned deterioration of image quality.

〔発明の目的〕[Purpose of the invention]

本発明はこれに対しくり返し疲労特性の改善された電子
写真用セレン感光体を提供することを目的とする。
In view of this, it is an object of the present invention to provide a selenium photoreceptor for electrophotography with improved repeated fatigue characteristics.

〔発明の要点〕[Key points of the invention]

含有するセレンまたはセレン・テルル合金よシ成ること
によって上記の目的を達成する。ギヤリア輸送にあずか
る層とは機能分離型の感光体ではキヤリア輸送層を意味
し、単一層感光体の場合は感光層そのものを意味する。
The above object is achieved by forming a selenium containing selenium or a selenium-tellurium alloy. The layer participating in gear transport means the carrier transport layer in the case of a functionally separated type photoreceptor, and means the photosensitive layer itself in the case of a single layer photoreceptor.

〔発明の実施例〕[Embodiments of the invention]

本発明の実施例ではアルミニウム円筒を用いる支持体上
に機能分離型感光体のキャリア輸送1@ (CTL )
としであるいは単一感光層として銀i50ppm添加し
た5、5重量−のテルルを含むセレン合金層を蒸着した
。このような蒸着は第1図に示すように図示しない真空
蒸着槽中に回転可能に配置された導電性支持体1の下方
に二つの蒸発源2および3を収容し、一方の蒸発源2に
は感光層の主成分であるBe −Te合金を、他方の蒸
発源3には紹を充てんする。蒸着槽の真空度全10トル
以上に設定し、蒸発源2.3iそれぞれ250〜450
℃および900〜1100℃の温度に同時に加熱して同
時に蒸発させることにより蒸着層中にAgを均一に分布
させる。機能分離型感光体としては上記のように形成さ
れた60μmの厚さのCTLO上にキャリア発生層(C
GL )として25重量−のTeを含むBe合金からな
る6μmの厚さの蒸着層を形成した。
In the embodiment of the present invention, carrier transport of a functionally separated photoreceptor on a support using an aluminum cylinder 1@(CTL)
A selenium alloy layer containing 5.5 wt. tellurium with 50 ppm silver i added was deposited as a single photosensitive layer. As shown in FIG. 1, two evaporation sources 2 and 3 are housed below a conductive support 1 rotatably arranged in a vacuum evaporation tank (not shown), and one evaporation source 2 is connected to the other evaporation source 2. The evaporation source 3 is filled with Be--Te alloy, which is the main component of the photosensitive layer, and the other evaporation source 3 is filled with Be--Te alloy. Set the total vacuum level of the evaporation tank to 10 torr or more, and set the evaporation source 2.3i to 250 to 450 for each.
Ag is uniformly distributed in the deposited layer by simultaneous heating to temperatures of 900 to 1100°C and simultaneous evaporation. As a function-separated photoreceptor, a carrier generation layer (C
A 6 μm thick vapor deposition layer was formed from a Be alloy containing 25% by weight of Te as GL).

第2図は連続くり返し複写における帯電位および残留電
位の変化を示す。鎖、[7121,23はそれぞれ上記
のように製作した機能分離型感光体の表面電位および残
留電位を示し、実線22.24はAgがl ppm以下
の場合の表面電位および残留電位を示す。この図より本
発明による感光体はAgを添加しない感光体とくらべ露
光前帯電位にほとんど変動がなく、画像品質上問題とな
る残留電位は1/2以下のレベルに抑えられたことが分
かる。従ってCTL中にAgを50ppmの濃度で均一
に有する感光体は、低疲労で地かぶり、濃度低下、ゴー
スト等の少ない良好な画像を得る事ができる。
FIG. 2 shows changes in charged potential and residual potential during continuous repeated copying. Chains [7121 and 23 respectively indicate the surface potential and residual potential of the functionally separated photoreceptor produced as described above, and the solid line 22.24 indicates the surface potential and residual potential when Ag is 1 ppm or less. From this figure, it can be seen that the photoreceptor according to the present invention has almost no fluctuation in pre-exposure charge potential than the photoreceptor to which no Ag is added, and the residual potential, which is a problem in image quality, is suppressed to a level of 1/2 or less. Therefore, a photoreceptor having a uniform concentration of Ag at a concentration of 50 ppm in the CTL can provide good images with low fatigue and less background fog, lower density, ghost, etc.

第3図に複写実施積項の温度を種々変えた時の露光前帯
電位、螢電後1秒間の電位保持率(暗中)および光除電
後の残留電位の変化を示し、鎖線31゜33.35がそ
れぞれ本発明によりCTL lcAgを50 ppmの
濃度で含有する感光体の温度特性を、実線32゜抛、3
6がそれぞれAgの言有童1 ppm以下の感光体の温
度特性を示す。た望し露光前帯電位曲線あ。
FIG. 3 shows the changes in the pre-exposure potential, the potential retention rate for 1 second after flashlighting (in the dark), and the residual potential after optical neutralization when the temperature of the copying product term was varied. 35 represents the temperature characteristics of a photoreceptor containing CTL lcAg at a concentration of 50 ppm according to the present invention, respectively;
6 shows the temperature characteristics of a photoreceptor with an Ag content of 1 ppm or less. The desired pre-exposure potential curve.

36および帯電位保持率曲線33.34は室温を23℃
の時の測定値を100とした時の相対値で示す。第3図
から本発明によシムgを50 ppmの濃度に添加した
感光体は従来の感光体と温度特性に関してほとんど差が
なく、室温から50℃程度の高温まで従来の感光体と同
様に使用することが可能なことが明らかである。なおA
gの添加は10 1)I)mを超えない範囲で同様の効
果を示す。
36 and charge potential retention curves 33.34 are at room temperature of 23°C.
It is expressed as a relative value when the measured value at the time of is set as 100. Figure 3 shows that the photoreceptor according to the present invention to which Shim G is added at a concentration of 50 ppm has almost no difference in temperature characteristics from conventional photoreceptors, and can be used in the same way as conventional photoreceptors from room temperature to high temperatures of about 50°C. It is clear that it is possible to do so. Furthermore, A
The addition of 1)g shows the same effect as long as it does not exceed 10 1)I)m.

以上の結果はBe −Te合金でなく純SθにAiを添
加した場合、あるいは単一層感光体においても同様に得
られる。またCTL以外の層の構成元素の成分を問わな
い。
The above results can be similarly obtained when Ai is added to pure Sθ instead of the Be-Te alloy, or when a single layer photoreceptor is used. Furthermore, the composition of the constituent elements of the layers other than the CTL does not matter.

〔発明の効果〕〔Effect of the invention〕

本発明は機能分離型感光体のCTLあるいは単一アを捕
獲するトラップ単位を減少させ、連続くり返し使用にお
ける疲労特性の曳好な電子写真用セレン感光体を得るこ
とができ、 xno複写機用感光体への適用のほかにプ
リンタ、インテリジェントコピア用感光体への適用も可
能で得られる効果は極めて大きい。
The present invention reduces the number of CTLs or trap units that capture single a in a functionally separated photoreceptor, and provides a selenium photoreceptor for electrophotography with good fatigue characteristics during continuous repeated use. In addition to being applied to the body, it can also be applied to photoreceptors for printers and intelligent copiers, and the effects obtained are extremely large.

【図面の簡単な説明】[Brief explanation of drawings]

第1図は本発明の一実施例の感光体の蒸発方法を概念的
に示す断面図、第2図は本発明の一実施例および比較例
の感光体のくり返し使用疲労特性を示す線図、第3図は
同じく温度特性を示す線図である。 1・・・導電性支持体、2・・・Be −Te合金蒸発
源、3・・・Ag蒸発源。  6−
FIG. 1 is a cross-sectional view conceptually showing an evaporation method for a photoreceptor according to an embodiment of the present invention, and FIG. 2 is a diagram showing fatigue characteristics of the photoreceptors according to an embodiment of the present invention and a comparative example due to repeated use. FIG. 3 is a diagram similarly showing temperature characteristics. 1... Conductive support, 2... Be-Te alloy evaporation source, 3... Ag evaporation source. 6-

Claims (1)

【特許請求の範囲】[Claims] 1)感光層のキャリア輸送にあずかる層が銀を5〜10
3ppm含有するセレンまたはセレン・テルル合金より
成ることを特徴とする電子写真用セレン感光体。
1) The layer that participates in carrier transport in the photosensitive layer contains 5 to 10 silver.
A selenium photoreceptor for electrophotography, characterized in that it is made of selenium or a selenium-tellurium alloy containing 3 ppm of selenium.
JP19368083A 1983-10-17 1983-10-17 Selenium type electrophotographic sensitive body Granted JPS6084545A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP19368083A JPS6084545A (en) 1983-10-17 1983-10-17 Selenium type electrophotographic sensitive body

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP19368083A JPS6084545A (en) 1983-10-17 1983-10-17 Selenium type electrophotographic sensitive body

Publications (2)

Publication Number Publication Date
JPS6084545A true JPS6084545A (en) 1985-05-13
JPH0217019B2 JPH0217019B2 (en) 1990-04-19

Family

ID=16311997

Family Applications (1)

Application Number Title Priority Date Filing Date
JP19368083A Granted JPS6084545A (en) 1983-10-17 1983-10-17 Selenium type electrophotographic sensitive body

Country Status (1)

Country Link
JP (1) JPS6084545A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085959A (en) * 1988-08-11 1992-02-04 Fuji Electric Co., Ltd. Se or se alloy electrophotographic photoreceptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5085959A (en) * 1988-08-11 1992-02-04 Fuji Electric Co., Ltd. Se or se alloy electrophotographic photoreceptor

Also Published As

Publication number Publication date
JPH0217019B2 (en) 1990-04-19

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