SU417961A3 - - Google Patents

Description

METHOD OF OBTAINING A PHOTO-SENSITIVE MATERIAL

one

This invention relates to a method for making photosensitive electrographic material.

A known method of making a photosensitive electrophotographic material involves forming a photoconductor layer (eg, from amorphous selenium), a photosensitive, charge-retarding layer with a stable internal polarization, and an insulating layer on one side of the photosensitive material on the substrate.

However, in this way, it is difficult to manufacture a material capable of effective charge retention and improved photosensitivity, since materials with a large number of charge retention levels used to form the photoconductor layer have low photosensitivity.

The aim of the present invention is to produce a photosensitive electrophotographic material having a high degree of charge retention and high photosensitivity.

According to the invention, a photosensitive material having a high sensitivity is made by forming a photoconductor layer on the substrate by vapor deposition of a selenium-tellurium alloy containing 40 mol.% Tellurium, forming a photosensitive charge inhibiting layer having a stable internal disposition property between the photoconductor and insulating layer. by simultaneous deposition of vapors of the selenium – tellurium alloy containing 16 mol.% tellurium and the selep – tellurium alloy containing 40 mol.% tellurium, and the subsequent formation aniem layer with high insulating .mi svo11stvamp on one side fotochuvstvitelpogo layer.

FIG. Figure 1 shows the structure of the photosensitive material of the present invention; in fig. Figure 2 shows a graph of the intensity of the latent image as a function of the magnitude.

As shown in FIG. 1, the photosensitive material contains a substrate 1, which can be metallic or dielectric, a photosensitive layer 2, which can be obtained from known highly sensitive photoconductor materials, layer 3, obtained by depositing a mixture of material vapors with a high degree of charge retention, and an insulating layer 4 which are arranged in the order indicated in the figure and are connected in a single structure.

Example i. For vapor deposition, a tank with many split and heated boats is used. An alloy of selenium p tellurium (powder) containing 40 mol.% Tellurium and used as a highly sensitive material is placed in many identical boats, and an alloy of selep and tellurium containing 16 mol.% Tellurium and used as a material with a high degree of charge retention. placed in the same boat. In the evaporator, an aluminum sheet substrate is placed; after removing air, all boats containing an selenium-tellurium alloy with 40 mol.% Tellurium, except for one, are used successively with a defined time interval to form a uniform layer containing some tellurium regardless of the vapor pressure difference selenium and tellurium. Get a layer pz alloy mudflow - tellurium with a thickness of 30 microns with a tellurium content of 40 mol.%. After that, the remaining two boats (a boat with an alloy containing 16 mol.% Tellurium and a boat with an alloy containing 40 mol.% Tellurium) are used simultaneously to form a 1 micron layer 3 containing a material with high photosensitivity and a high degree of charge delay, on the deposited selenium – tellurium alloy layer. Then the substrate is taken out of the apparatus and an insulating layer of polycarbonate 10 microns thick is formed on the surface of layer 3. Deposition of the vapors of the selenium-tellurium alloys is carried out at a vacuum value above mm Hg. Art. At the same time, the temperature in the boats is regulated in such a way that the sediment does not pass at a speed of less than 0.1 micron / min. With an increase in the tellurium content in the alloy, it is necessary to increase the temperature of the boat.

To charge the surface of the insulating layer 4 (the charge is 2000 c), a corona discharge is used. The charging of the surface of the insulating layer by charging the opposite polarity is carried out simultaneously with the exposure of the image for 0.2 sec (illumination 2 lux on illuminated areas) in order to form a latent image on the surface of the insulating layer corresponding to the exposed image and having a potential of -100 in pa of areas corresponding to the tempo areas of the exposed image, and corresponding to the illuminated areas of the exposed image. The latent image is developed as a charged nucleus powder and then printed by transfer. After the transfer, the surface of the photosensitive material is cleaned, the remaining latent image is removed in a known manner.

FIG. Figure 2 shows the relationship between the magnitude of the exposure of a photosensitive material and the inspiration of a latent image. The curve a shows that interpresi15 (the image of the latent image reaches a maximum when the illuminance of the exposed image is displayed; about 3 lux, and that a further increase in illumination does not lead to an increase in the intensity of the hidden

images.

If layer 3 contains only 16 mol.% Tellurium, then it is impossible to get a latent image of comparable intensity without increasing the illuminance of the exposed image several times. On the other hand, when a photosensitive material contains a photosensitive layer, sucking only from a selep-tellurium alloy with a tellurium content of 40 mol.%, It does not contain a photosensitive layer from an alloy with a tellurium content of 16 mol.%, The difference in soft and dark The areas of the exposed image are small and cannot be practically used. Photosensitive layer

1 micron thick, containing the first layer of selenium-tellurium alloy containing 16 mol.% tellurium and the second layer containing 40 mol. % tellurium, obtained by vapor deposition on the surface of the nerve layer, and

photosensitive layer containing the first layer from the snlav selenium - tellurium containing 40. mol.% tellurium and the second layer containing 16 mol.% tellurium deposited on one surface of the nerve layer to the thickness

a layer of 1 micron forms latent images with a lower and 1 intensity than the layers described above. Moreover, the sensitivity of the photosensitive material is low and such material cannot be used practically. A blunt precipitated layer of the mixture, having a thickness of about 1 micron, shows good characteristics, because such a photosensitive material, such as selenium-tellurium, has a very high ability to absorb light. Almost all the light rays are absorbed in the surface layer, so that free charge carriers excited by the absorbed light move easily over a longer distance. Therefore, the thickness of the mixture layer 3 needs to be set depending on the degree of absorption of light.

In addition, an increase in the intensity of the resulting latent image can be achieved

facilitating transfer of charge carriers between particles of two different photosensitive materials in a mixture. This can be achieved by heat treatment.

Example 2. Photosensitive material

manufactured according to example 1, is subjected to heat treatment in air at 65 ° C for 3 hours. The latent image is obtained as in Example 1. As curve B (see FIG. 2) shows, the sensitivity of the latent image increases 1.7 times and it becomes possible to improve the reproduction of day tones.

Thermal treatment lowers the barrier effect that exists between particles.

various photosensitive materials.

thus contributing to more light carrier transfer. Therefore, the particle characteristics of two different materials are effective. It is established that the effect of heat treatment is more effective with increasing differences in the characteristics of the two photosensitive materials.

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1. A method for producing a photosensitive material by depositing a photoconductor layer on the substrate, a photosensitive, charge-retarding layer having

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Claims (2)

I Ij d Ш5 j ti four and 2U о о, g 1 l i 5, // - internally polarized, and an insulating layer with high insulating properties, characterized in that, in order to increase the photosensitivity of the material, deposition of a photoconductor layer on the substrate is deposited from the selenium-tellurium alloy vapor, 1 its 40 mol% of the latter, and delayed charges - by simultaneous deposition of selenium – tellurium alloy vapor vapors on the material obtained, containing 16 mol.% of the latter, and selenium – tellurium alloy vapor containing 40,; ol.% tellurium. 2. The method according to p. 1, I distinguish it with the fact that the material obtained in the nron, ese, the material is heated at a temperature of 65 ° C, 3 hours , but.