JPH0259764A - Electrophotographic sensitive body - Google Patents
Electrophotographic sensitive bodyInfo
- Publication number
- JPH0259764A JPH0259764A JP20933688A JP20933688A JPH0259764A JP H0259764 A JPH0259764 A JP H0259764A JP 20933688 A JP20933688 A JP 20933688A JP 20933688 A JP20933688 A JP 20933688A JP H0259764 A JPH0259764 A JP H0259764A
- Authority
- JP
- Japan
- Prior art keywords
- indium
- copper
- selenium
- layer
- photosensitive layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical class [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910001370 Se alloy Inorganic materials 0.000 claims abstract description 15
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims abstract description 12
- 229910052802 copper Inorganic materials 0.000 claims abstract description 12
- 239000010949 copper Substances 0.000 claims abstract description 12
- 229910052738 indium Inorganic materials 0.000 claims abstract description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 12
- 239000000758 substrate Substances 0.000 claims abstract description 12
- 239000000463 material Substances 0.000 claims abstract description 8
- 108091008695 photoreceptors Proteins 0.000 claims description 23
- 239000010410 layer Substances 0.000 abstract description 39
- 230000035945 sensitivity Effects 0.000 abstract description 9
- 239000002356 single layer Substances 0.000 abstract description 3
- 231100000053 low toxicity Toxicity 0.000 abstract description 2
- 231100000956 nontoxicity Toxicity 0.000 abstract 1
- 229910052711 selenium Inorganic materials 0.000 description 10
- 239000011669 selenium Substances 0.000 description 10
- 206010034972 Photosensitivity reaction Diseases 0.000 description 5
- UIPVMGDJUWUZEI-UHFFFAOYSA-N copper;selanylideneindium Chemical compound [Cu].[In]=[Se] UIPVMGDJUWUZEI-UHFFFAOYSA-N 0.000 description 5
- 230000036211 photosensitivity Effects 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 230000003247 decreasing effect Effects 0.000 description 3
- 238000001704 evaporation Methods 0.000 description 3
- 230000008020 evaporation Effects 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000004065 semiconductor Substances 0.000 description 3
- 229910052715 tantalum Inorganic materials 0.000 description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 3
- 238000007738 vacuum evaporation Methods 0.000 description 3
- 229910001215 Te alloy Inorganic materials 0.000 description 2
- 229910021417 amorphous silicon Inorganic materials 0.000 description 2
- 230000006866 deterioration Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910010272 inorganic material Inorganic materials 0.000 description 2
- 239000011147 inorganic material Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001771 vacuum deposition Methods 0.000 description 2
- 229910000967 As alloy Inorganic materials 0.000 description 1
- 101150064053 Rffl gene Proteins 0.000 description 1
- 235000010724 Wisteria floribunda Nutrition 0.000 description 1
- QLNFINLXAKOTJB-UHFFFAOYSA-N [As].[Se] Chemical compound [As].[Se] QLNFINLXAKOTJB-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000000428 dust Substances 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 229920003227 poly(N-vinyl carbazole) Polymers 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03G—ELECTROGRAPHY; ELECTROPHOTOGRAPHY; MAGNETOGRAPHY
- G03G5/00—Recording members for original recording by exposure, e.g. to light, to heat, to electrons; Manufacture thereof; Selection of materials therefor
- G03G5/02—Charge-receiving layers
- G03G5/04—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor
- G03G5/08—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic
- G03G5/082—Photoconductive layers; Charge-generation layers or charge-transporting layers; Additives therefor; Binders therefor characterised by the photoconductive material being inorganic and not being incorporated in a bonding material, e.g. vacuum deposited
- G03G5/08207—Selenium-based
Abstract
Description
【発明の詳細な説明】
産業上の利用分野
本発明は、赤色光に感度を有し、かつ毒性の低い無機材
料を使用した電子写真感光体に関し、レーザープリンタ
ーヤＬＥＤプリンター、あるいは可視光を光源とする複
写機又１はそのいずれにも使用可能な電子写真感光体に
関する。DETAILED DESCRIPTION OF THE INVENTION Field of Industrial Application The present invention relates to an electrophotographic photoreceptor using an inorganic material that is sensitive to red light and has low toxicity. The present invention relates to an electrophotographic photoreceptor that can be used in any of the copying machines.
従来の技術
従来、電子写真感光体において、感光層にはセレン、セ
レン・テルル合金、セレン・ひ素合金等のセレン系材料
や、アモルファスシリコン或いは有機感光材料を使用し
たものが使用されている。BACKGROUND ART Conventionally, in electrophotographic photoreceptors, photosensitive layers have been made of selenium-based materials such as selenium, selenium-tellurium alloys, selenium-arsenic alloys, amorphous silicon, or organic photosensitive materials.
発明が解決しようとする課題
しかしながら、セレンやセレン・テルル合金等よりなる
感光層を有するものは、赤色光に対する感度が低いため
色再現性が不充分である。また半導体レーザーなどの低
価格のレーザーを用いてレーザー書き込みをする場合、
これらの光源に対する感度が低いため使用不可能である
。Problems to be Solved by the Invention However, those having a photosensitive layer made of selenium or a selenium-tellurium alloy have low sensitivity to red light and therefore have insufficient color reproducibility. Also, when writing with a low-cost laser such as a semiconductor laser,
It is unusable due to low sensitivity to these light sources.
また、ｓｅにＡＳを高濃度に添加した５ｅＡＳ合金（特
開昭４４−３００７５号公報）を用いることが提案され
ているが、赤色光に対する感度が充分でなく、また、毒
性の強いＡＳを含むという問題点もある。Furthermore, it has been proposed to use a 5eAS alloy (Japanese Unexamined Patent Publication No. 44-30075) in which a high concentration of AS is added to se, but the sensitivity to red light is insufficient and it also contains highly toxic AS. There is also a problem.
一方、アモルファスシリコンは、プラズマＣＶＤ法によ
って製造するため生産性が低く、また、有機感光材料を
用いた感光体は、表面硬度が低いため、耐刷性が低く、
寿命が短いという問題点を有している。On the other hand, amorphous silicon has low productivity because it is manufactured by plasma CVD, and photoreceptors using organic photosensitive materials have low surface hardness, so printing durability is low.
The problem is that it has a short lifespan.
したがって、本発明の目的は、毒性を有しなく、赤色光
に対して感度を有する新規な無機材料を使用した電子写
真感光体を提供することにある。Therefore, an object of the present invention is to provide an electrophotographic photoreceptor using a novel inorganic material that is non-toxic and sensitive to red light.
本発明の他の目的は、ＨｅＮｅレーザー、ＬＥＤアレイ
、又は半導体レーザーを光源として使用することのでき
る電子写真感光体を得ることにおる。Another object of the present invention is to obtain an electrophotographic photoreceptor that can use a HeNe laser, an LED array, or a semiconductor laser as a light source.
本発明のさらに他の目的は、感光体表面に傷がつき難く
、多数枚の画像形成に対して劣化の少ない電子写真感光
体を得ることにおる。Still another object of the present invention is to obtain an electrophotographic photoreceptor whose surface is less likely to be scratched and whose surface is less susceptible to deterioration when a large number of images are formed.
課題を解決するための手段及び作用
本発明の電子写真感光体は、基板上に、銅とインジウム
を含むセレン合金を電荷発生材料とする光導電層を有す
ることを特徴とする。Means for Solving the Problems and Effects The electrophotographic photoreceptor of the present invention is characterized in that it has a photoconductive layer on a substrate, the photoconductive layer containing a selenium alloy containing copper and indium as a charge-generating material.
第２図乃至第４図は、本発明の電子写真感光体の層構成
を示したもので、第２図は、導電性支持体１上に単層構
造の感光層２を有するものを示し、第３図は、導電性支
持体１上に電荷移動層３が設けられ、その上に電荷発生
層４が設けられたものを示し、第４図は、導電性支持体
１上に電荷発生層４が設けられ、その上に透明な電荷移
動層３が設けられたものを示す。2 to 4 show the layer structure of the electrophotographic photoreceptor of the present invention, and FIG. 2 shows one having a single-layer photosensitive layer 2 on a conductive support 1, 3 shows a charge transfer layer 3 provided on a conductive support 1 and a charge generation layer 4 provided thereon, and FIG. 4 shows a charge transfer layer 3 provided on a conductive support 1. 4 and a transparent charge transfer layer 3 is provided thereon.
本発明の電子写真感光体は、感光層が単層構造の場合に
は、感光層が銅及びインジウムを含むセレン合金よりな
り、また、第３図又は第４図に記載の様に感光層が積層
構造の場合には、電荷発生層が銅及びインジウムを含む
セレン合金よりなる。In the electrophotographic photoreceptor of the present invention, when the photosensitive layer has a single layer structure, the photosensitive layer is made of a selenium alloy containing copper and indium; In the case of a laminated structure, the charge generation layer is made of a selenium alloy containing copper and indium.
これ等の感光層において、銅の含有量は、１〜１５重量
％であることが好ましく、インジウムの含有量は、２〜
３０重量％でおることが好ましい。銅及びインジウムの
含有量が上記の範囲よりも低くなると、電子写真感光体
の感度が充分でなくなり、また、上記範囲よりも高くな
ると、暗抵抗が小さくなるため帯電しなくなる。In these photosensitive layers, the copper content is preferably 1 to 15% by weight, and the indium content is 2 to 15% by weight.
The content is preferably 30% by weight. If the content of copper and indium is lower than the above range, the sensitivity of the electrophotographic photoreceptor will not be sufficient, and if the content is higher than the above range, the dark resistance will become small and the electrophotographic photoreceptor will not be charged.
本発明において、これ等感光層は、真空蒸着法の他に、
スパッタリング法、鍍金法、スプレー法等によって形成
することができる。本発明において、感光層は、膜厚０
．１〜Ｂｏｔ１ｍの範囲に設定するのが好ましい。In the present invention, these photosensitive layers can be formed by a vacuum deposition method or by
It can be formed by a sputtering method, a plating method, a spray method, or the like. In the present invention, the photosensitive layer has a film thickness of 0
．． It is preferable to set it in the range of 1 to Bot1m.
第５図は、真空蒸着装置の概略構成図でおる。FIG. 5 is a schematic diagram of the vacuum evaporation apparatus.
真空蒸着装置の真空槽５内にに載置されたボート６に、
銅・インジウム・セレン合金粉末をフラッシュ蒸着用の
供給装置７によって供給し、ボード内の蒸着原料８を蒸
発させて導電性支持体１上に銅・インジウム・セレン合
金よりなる蒸着層を形成する。In a boat 6 placed in a vacuum chamber 5 of a vacuum evaporation device,
Copper-indium-selenium alloy powder is supplied by a supply device 7 for flash evaporation, and the evaporation raw material 8 in the board is evaporated to form a vapor-deposited layer of copper-indium-selenium alloy on the conductive support 1.
第３図及び第４図に示される様に、感光層が積層構造を
有する場合において、電荷移動層としては、例えばセレ
ンや少最のひ素やテルルを含むセレン合金、またポリビ
ニルカルバゾール等の有機光導電材料などより構成され
る層があげられる。As shown in FIGS. 3 and 4, when the photosensitive layer has a laminated structure, the charge transfer layer may be made of, for example, selenium, a selenium alloy containing a small amount of arsenic or tellurium, or an organic photosensitive layer such as polyvinylcarbazole. Examples include layers made of conductive materials.
実施例 次に、本発明を実施例によって説明する。Example Next, the present invention will be explained by examples.
実施例１
真空蒸着機を用い、アルミニウム基板上に電荷輸送層と
してセレンを膜厚１０ｐｍになるように蒸着した。基板
温度を５０℃に設定し、蒸発源にはタンタル製ボートを
用い、ボート温度を３００℃に設定した。Example 1 Using a vacuum deposition machine, selenium was deposited as a charge transport layer on an aluminum substrate to a thickness of 10 pm. The substrate temperature was set at 50°C, a tantalum boat was used as the evaporation source, and the boat temperature was set at 300°C.
更に、形成された電荷輸送層の上に、１０００℃で、銅
１９重量％及びインジウム３４重量％を含むセレン合金
を、タンタル製ボートを用いて蒸着し、膜厚１即の電荷
発生層を形成した。この際の基板温度は５０℃であった
。Further, on the formed charge transport layer, a selenium alloy containing 19% by weight of copper and 34% by weight of indium was deposited at 1000° C. using a tantalum boat to form a charge generation layer with a thickness of 1. did. The substrate temperature at this time was 50°C.
作製された電子写真感光体に、０．３ｃ／ｃｍに帯電さ
せたところ、表面電位は２５０ Ｖであった。また、波
長７００ｎｍの光感度を測定したところ、１エルグ／ｃ
ｒｉの光量につき１、表面電位が５Ｖ低下した。When the produced electrophotographic photoreceptor was charged to 0.3 c/cm, the surface potential was 250 V. In addition, when the photosensitivity at a wavelength of 700 nm was measured, it was found to be 1 erg/c.
The surface potential decreased by 1 V and 5 V for each ri light amount.
実施例２
真空蒸着機を用い、アルミニウム基板上に電荷輸送層と
してセレンを膜厚６０１Ｉ７Ｉ！となるように蒸着した
。更に実施例１と同一組成の銅・インジウム・セレン合
金を、セレン層の上に蒸着して、膜厚１μｓの電荷発生
層を形成した。この際の基板温度及びボート温度は、実
施例１におけると同一に設定した。Example 2 Using a vacuum evaporator, selenium was deposited as a charge transport layer on an aluminum substrate to a thickness of 601I7I! It was deposited so that Further, a copper-indium-selenium alloy having the same composition as in Example 1 was deposited on the selenium layer to form a charge generation layer with a thickness of 1 μs. The substrate temperature and boat temperature at this time were set to be the same as in Example 1.
作製された電子写真感光体を０．１ｃ／ａ７ｔに帯電さ
せたところ、表面電位は６００ Ｖであった。また、波
長７００ｎｍの光感度を測定したところ、１エルグ／ｃ
ｒｉの光量につき、表面電位が３０Ｖ低下した。When the produced electrophotographic photoreceptor was charged to 0.1c/a7t, the surface potential was 600V. In addition, when the photosensitivity at a wavelength of 700 nm was measured, it was found to be 1 erg/c.
The surface potential decreased by 30V per ri light intensity.
実施例３
実施例２と同様にして膜厚６０即のセレン膜を形成し、
その上に実施例１と同一組成の銅・インジウム・セレン
合金をフラッシュ蒸着によって蒸着した。この際の基板
温度は５０’Ｃであり、ボートはタンタル製のものを用
い、ボート温度は１２００℃に設定した。また、銅・イ
ンジウム・セレン合金よりなる蒸着膜の膜厚は、１μｓ
であった。Example 3 A selenium film with a film thickness of 60 mm was formed in the same manner as in Example 2,
A copper-indium-selenium alloy having the same composition as in Example 1 was deposited thereon by flash deposition. The substrate temperature at this time was 50'C, the boat made of tantalum was used, and the boat temperature was set at 1200C. The thickness of the vapor deposited film made of copper-indium-selenium alloy is 1 μs.
Met.
作製された電子写真感光体を０．１ｃ／ｒｆｆｌに帯電
させたところ、表面電位は３００ Ｖであった。また、
波長７００ｎｍの光感度を測定したところ、１エルグ／
ｃｒｉの光量につき、表面電位が２５０ Ｖ低下した。When the produced electrophotographic photoreceptor was charged to 0.1c/rffl, the surface potential was 300V. Also,
When the photosensitivity at a wavelength of 700 nm was measured, it was 1 erg/
The surface potential decreased by 250 V per cr light intensity.
比較例１
実施例１と同様な方法で、アルミニウム基板上にセレン
を膜厚１０即になるように蒸着した。Comparative Example 1 In the same manner as in Example 1, selenium was deposited on an aluminum substrate to a thickness of 10 mm.
得られた電子写真感光体を０１３Ｃ／ｃＩＡに帯電させ
たところ、表面電位は２５０ Ｖであった。また、波長
７００ｎｍの光感度を測定したところ、全く電位が変化
せず、感度がないことが認められた。When the obtained electrophotographic photoreceptor was charged to 013C/cIA, the surface potential was 250V. Furthermore, when the photosensitivity at a wavelength of 700 nm was measured, it was found that the potential did not change at all and there was no sensitivity.
比較例２
実施例２と同様な方法でアルミニウム基板上にセレンを
膜厚６０ｐｍになるように蒸着した。Comparative Example 2 Selenium was deposited on an aluminum substrate in the same manner as in Example 2 to a thickness of 60 pm.
得られた電子写真感光体を０．１Ｃ／ｃ屑に帯電させた
ところ、表面電位は１００ＯＶでおった。また、波長７
００ｎｍの光感度を測定したところ、全く電位が変化せ
ず、感度がないことが認められた。When the obtained electrophotographic photoreceptor was charged with 0.1 C/c dust, the surface potential was 100 OV. Also, wavelength 7
When the photosensitivity at 00 nm was measured, it was found that the potential did not change at all and there was no sensitivity.
なお、実施例１〜３及び比較例１及び２の電子写真感光
体の表面電位と光量との関係を第１図に示す。Incidentally, the relationship between the surface potential and the light amount of the electrophotographic photoreceptors of Examples 1 to 3 and Comparative Examples 1 and 2 is shown in FIG.
発明の効果
本発明の電子写真感光体は、前記のとおりの新規な電荷
発生材料よりなる感光層を有するから、赤色の光に対す
る感度が高く、したがって、半導体レーザーを光源とし
たものに使用することができる。また、感光体表面に傷
がつき難く、多数枚の画像形成に対して劣化が少ない。Effects of the Invention Since the electrophotographic photoreceptor of the present invention has a photosensitive layer made of the novel charge-generating material as described above, it has high sensitivity to red light, and therefore can be used in applications using a semiconductor laser as a light source. Can be done. In addition, the surface of the photoreceptor is less likely to be scratched, and there is less deterioration when images are formed on a large number of sheets.
したがって、本発明の電子写真感光体は、レーザープリ
ンターＬＥＤプリンターあるいは可視光を光源とする複
写機などに用いた場合、安定した画質を維持して多数枚
の画像を得ることができる。Therefore, when the electrophotographic photoreceptor of the present invention is used in a laser printer, an LED printer, a copying machine using visible light as a light source, etc., it is possible to maintain stable image quality and obtain a large number of images.
第１図は、本発明の実施例及び比較例の電子写真感光体
の表面電位と光量との関係を示すグラフ、第２図ないし
第４図は、それぞれ本発明の実施例の層構成を説明する
ための模式的断面図、第５図は真空蒸着装置の概略の構
成を説明する説明図でおる。
１・・・導電性支持体、２・・・感光層、３・・・電荷
移動層、４・・・電荷発生層、５・・・真空槽、６・・
・ボート、７・・・供給装置、８・・・蒸着原料。
出願人 富士ゼロックス株式会社FIG. 1 is a graph showing the relationship between surface potential and light amount of electrophotographic photoreceptors of Examples and Comparative Examples of the present invention, and FIGS. 2 to 4 each illustrate the layer structure of Examples of the present invention. FIG. 5 is a schematic cross-sectional view for explaining the general structure of the vacuum evaporation apparatus. DESCRIPTION OF SYMBOLS 1... Conductive support, 2... Photosensitive layer, 3... Charge transfer layer, 4... Charge generation layer, 5... Vacuum chamber, 6...
- Boat, 7... Supply device, 8... Vapor deposition raw material. Applicant Fuji Xerox Co., Ltd.
Claims (1)
荷発生材料とする感光層を有することを特徴とする電子
写真感光体。(1) An electrophotographic photoreceptor comprising, on a substrate, a photosensitive layer using a selenium alloy containing copper and indium as a charge-generating material.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20933688A JPH0259764A (en) | 1988-08-25 | 1988-08-25 | Electrophotographic sensitive body |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP20933688A JPH0259764A (en) | 1988-08-25 | 1988-08-25 | Electrophotographic sensitive body |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH0259764A true JPH0259764A (en) | 1990-02-28 |
Family
ID=16571263
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP20933688A Pending JPH0259764A (en) | 1988-08-25 | 1988-08-25 | Electrophotographic sensitive body |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH0259764A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5068566A (en) * | 1990-06-04 | 1991-11-26 | Rockwell International Corporation | Electric traction motor |
-
1988
- 1988-08-25 JP JP20933688A patent/JPH0259764A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5068566A (en) * | 1990-06-04 | 1991-11-26 | Rockwell International Corporation | Electric traction motor |
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