JPS6083379A - 半導体複合センサ - Google Patents

半導体複合センサ

Info

Publication number
JPS6083379A
JPS6083379A JP58191500A JP19150083A JPS6083379A JP S6083379 A JPS6083379 A JP S6083379A JP 58191500 A JP58191500 A JP 58191500A JP 19150083 A JP19150083 A JP 19150083A JP S6083379 A JPS6083379 A JP S6083379A
Authority
JP
Japan
Prior art keywords
silicon
ion
senser
region
sensor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58191500A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0584070B2 (enrdf_load_stackoverflow
Inventor
Toshihide Kuriyama
敏秀 栗山
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
NEC Corp
Original Assignee
NEC Corp
Nippon Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by NEC Corp, Nippon Electric Co Ltd filed Critical NEC Corp
Priority to JP58191500A priority Critical patent/JPS6083379A/ja
Publication of JPS6083379A publication Critical patent/JPS6083379A/ja
Publication of JPH0584070B2 publication Critical patent/JPH0584070B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/50—Devices controlled by mechanical forces, e.g. pressure

Landscapes

  • Measuring Fluid Pressure (AREA)
  • Pressure Sensors (AREA)
JP58191500A 1983-10-13 1983-10-13 半導体複合センサ Granted JPS6083379A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58191500A JPS6083379A (ja) 1983-10-13 1983-10-13 半導体複合センサ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58191500A JPS6083379A (ja) 1983-10-13 1983-10-13 半導体複合センサ

Publications (2)

Publication Number Publication Date
JPS6083379A true JPS6083379A (ja) 1985-05-11
JPH0584070B2 JPH0584070B2 (enrdf_load_stackoverflow) 1993-11-30

Family

ID=16275681

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58191500A Granted JPS6083379A (ja) 1983-10-13 1983-10-13 半導体複合センサ

Country Status (1)

Country Link
JP (1) JPS6083379A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63215929A (ja) * 1987-03-04 1988-09-08 Matsushita Electric Ind Co Ltd 半導体式圧力検知装置
US5320977A (en) * 1990-02-06 1994-06-14 United Technologies Corporation Method and apparatus for selecting the resistivity of epitaxial layers in III-V devices
US6278167B1 (en) * 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63215929A (ja) * 1987-03-04 1988-09-08 Matsushita Electric Ind Co Ltd 半導体式圧力検知装置
US5320977A (en) * 1990-02-06 1994-06-14 United Technologies Corporation Method and apparatus for selecting the resistivity of epitaxial layers in III-V devices
US6278167B1 (en) * 1998-08-14 2001-08-21 Infineon Technologies Ag Semiconductor sensor with a base element and at least one deformation element

Also Published As

Publication number Publication date
JPH0584070B2 (enrdf_load_stackoverflow) 1993-11-30

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