JPS6079716A - 半導体デバイスの製造方法 - Google Patents

半導体デバイスの製造方法

Info

Publication number
JPS6079716A
JPS6079716A JP59116746A JP11674684A JPS6079716A JP S6079716 A JPS6079716 A JP S6079716A JP 59116746 A JP59116746 A JP 59116746A JP 11674684 A JP11674684 A JP 11674684A JP S6079716 A JPS6079716 A JP S6079716A
Authority
JP
Japan
Prior art keywords
silicon
boron
layer
substrate
diffusion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP59116746A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0263291B2 (cg-RX-API-DMAC10.html
Inventor
デニス・パトリツク・ボールデイン
デール・ポール・ハロツク
スタンレー・ロバーツ
ジエームズ・ガードナー・ライアン
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of JPS6079716A publication Critical patent/JPS6079716A/ja
Publication of JPH0263291B2 publication Critical patent/JPH0263291B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P32/171—
    • H10D64/0111—
    • H10P32/1408—
    • H10P95/00—
    • H10W20/064—

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
JP59116746A 1983-09-29 1984-06-08 半導体デバイスの製造方法 Granted JPS6079716A (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US537124 1983-09-29
US06/537,124 US4481046A (en) 1983-09-29 1983-09-29 Method for making diffusions into a substrate and electrical connections thereto using silicon containing rare earth hexaboride materials

Publications (2)

Publication Number Publication Date
JPS6079716A true JPS6079716A (ja) 1985-05-07
JPH0263291B2 JPH0263291B2 (cg-RX-API-DMAC10.html) 1990-12-27

Family

ID=24141313

Family Applications (1)

Application Number Title Priority Date Filing Date
JP59116746A Granted JPS6079716A (ja) 1983-09-29 1984-06-08 半導体デバイスの製造方法

Country Status (4)

Country Link
US (1) US4481046A (cg-RX-API-DMAC10.html)
EP (1) EP0162950B1 (cg-RX-API-DMAC10.html)
JP (1) JPS6079716A (cg-RX-API-DMAC10.html)
DE (1) DE3469108D1 (cg-RX-API-DMAC10.html)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4490193A (en) * 1983-09-29 1984-12-25 International Business Machines Corporation Method for making diffusions into a substrate and electrical connections thereto using rare earth boride materials
US5086016A (en) * 1990-10-31 1992-02-04 International Business Machines Corporation Method of making semiconductor device contact including transition metal-compound dopant source
US20040016401A1 (en) * 2002-07-26 2004-01-29 Metal Oxide Technologies, Inc. Method and apparatus for forming superconductor material on a tape substrate
US20040023810A1 (en) * 2002-07-26 2004-02-05 Alex Ignatiev Superconductor material on a tape substrate
US20040020430A1 (en) * 2002-07-26 2004-02-05 Metal Oxide Technologies, Inc. Method and apparatus for forming a thin film on a tape substrate
AU2010239265B2 (en) 2009-04-21 2014-06-05 Tetrasun, Inc. High-efficiency solar cell structures and methods of manufacture
EP2553735B1 (en) * 2010-03-26 2017-11-15 Tetrasun, Inc. Shielded electrical contact and doping through a passivating dielectric layer in a high-efficiency crystalline solar cell, including structure and methods of manufacture
US10068981B2 (en) 2016-03-02 2018-09-04 Lam Research Corporation Rare earth metal surface-activated plasma doping on semiconductor substrates
EP3579284A1 (en) * 2018-06-08 2019-12-11 Total SA Method to obtain a photovoltaic device

Family Cites Families (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3340108A (en) * 1963-07-09 1967-09-05 Semi Elements Inc Laser materials
US3601888A (en) * 1969-04-25 1971-08-31 Gen Electric Semiconductor fabrication technique and devices formed thereby utilizing a doped metal conductor
JPS567304B2 (cg-RX-API-DMAC10.html) * 1972-08-28 1981-02-17
US4180596A (en) * 1977-06-30 1979-12-25 International Business Machines Corporation Method for providing a metal silicide layer on a substrate
US4329706A (en) * 1979-03-01 1982-05-11 International Business Machines Corporation Doped polysilicon silicide semiconductor integrated circuit interconnections
US4364166A (en) * 1979-03-01 1982-12-21 International Business Machines Corporation Semiconductor integrated circuit interconnections
US4227944A (en) * 1979-06-11 1980-10-14 General Electric Company Methods of making composite conductive structures in integrated circuits
US4245796A (en) * 1979-06-15 1981-01-20 Chromalloy American Corporation System for handling flexible sheet rolls
US4389255A (en) * 1980-01-14 1983-06-21 Burroughs Corporation Method of forming buried collector for bipolar transistor in a semiconductor by selective implantation of poly-si followed by oxidation and etch-off
US4285761A (en) * 1980-06-30 1981-08-25 International Business Machines Corporation Process for selectively forming refractory metal silicide layers on semiconductor devices
US4378628A (en) * 1981-08-27 1983-04-05 Bell Telephone Laboratories, Incorporated Cobalt silicide metallization for semiconductor integrated circuits

Also Published As

Publication number Publication date
US4481046A (en) 1984-11-06
DE3469108D1 (en) 1988-03-03
EP0162950A1 (en) 1985-12-04
EP0162950B1 (en) 1988-01-27
JPH0263291B2 (cg-RX-API-DMAC10.html) 1990-12-27

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