JPS6077196A - 単結晶の引上方法 - Google Patents

単結晶の引上方法

Info

Publication number
JPS6077196A
JPS6077196A JP18577283A JP18577283A JPS6077196A JP S6077196 A JPS6077196 A JP S6077196A JP 18577283 A JP18577283 A JP 18577283A JP 18577283 A JP18577283 A JP 18577283A JP S6077196 A JPS6077196 A JP S6077196A
Authority
JP
Japan
Prior art keywords
cap
melt
pressure
single crystal
pulling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP18577283A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0329755B2 (cg-RX-API-DMAC7.html
Inventor
Riyuusuke Nakai
龍資 中井
Koji Tada
多田　紘二
Hajime Yamazaki
肇 山崎
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sumitomo Electric Industries Ltd
NTT Inc
Original Assignee
Nippon Telegraph and Telephone Corp
Sumitomo Electric Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nippon Telegraph and Telephone Corp, Sumitomo Electric Industries Ltd filed Critical Nippon Telegraph and Telephone Corp
Priority to JP18577283A priority Critical patent/JPS6077196A/ja
Publication of JPS6077196A publication Critical patent/JPS6077196A/ja
Publication of JPH0329755B2 publication Critical patent/JPH0329755B2/ja
Granted legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
    • C30B15/10—Crucibles or containers for supporting the melt

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
JP18577283A 1983-10-03 1983-10-03 単結晶の引上方法 Granted JPS6077196A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP18577283A JPS6077196A (ja) 1983-10-03 1983-10-03 単結晶の引上方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP18577283A JPS6077196A (ja) 1983-10-03 1983-10-03 単結晶の引上方法

Publications (2)

Publication Number Publication Date
JPS6077196A true JPS6077196A (ja) 1985-05-01
JPH0329755B2 JPH0329755B2 (cg-RX-API-DMAC7.html) 1991-04-25

Family

ID=16176614

Family Applications (1)

Application Number Title Priority Date Filing Date
JP18577283A Granted JPS6077196A (ja) 1983-10-03 1983-10-03 単結晶の引上方法

Country Status (1)

Country Link
JP (1) JPS6077196A (cg-RX-API-DMAC7.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275186A (ja) * 1985-05-29 1986-12-05 Hitachi Cable Ltd 単結晶引上装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS61275186A (ja) * 1985-05-29 1986-12-05 Hitachi Cable Ltd 単結晶引上装置

Also Published As

Publication number Publication date
JPH0329755B2 (cg-RX-API-DMAC7.html) 1991-04-25

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