JPS6074475A - 固体撮像素子 - Google Patents
固体撮像素子Info
- Publication number
- JPS6074475A JPS6074475A JP58181465A JP18146583A JPS6074475A JP S6074475 A JPS6074475 A JP S6074475A JP 58181465 A JP58181465 A JP 58181465A JP 18146583 A JP18146583 A JP 18146583A JP S6074475 A JPS6074475 A JP S6074475A
- Authority
- JP
- Japan
- Prior art keywords
- region
- conductivity type
- transfer
- type
- type semiconductor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
- H10F39/10—Integrated devices
- H10F39/12—Image sensors
- H10F39/15—Charge-coupled device [CCD] image sensors
- H10F39/158—Charge-coupled device [CCD] image sensors having arrangements for blooming suppression
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181465A JPS6074475A (ja) | 1983-09-29 | 1983-09-29 | 固体撮像素子 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58181465A JPS6074475A (ja) | 1983-09-29 | 1983-09-29 | 固体撮像素子 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS6074475A true JPS6074475A (ja) | 1985-04-26 |
| JPH0527271B2 JPH0527271B2 (enExample) | 1993-04-20 |
Family
ID=16101226
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58181465A Granted JPS6074475A (ja) | 1983-09-29 | 1983-09-29 | 固体撮像素子 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6074475A (enExample) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62156858A (ja) * | 1985-12-28 | 1987-07-11 | Matsushita Electronics Corp | 固体撮像装置 |
| JPS63110668A (ja) * | 1986-10-28 | 1988-05-16 | Toshiba Corp | 固体撮像装置 |
| JP2007173390A (ja) * | 2005-12-20 | 2007-07-05 | Fujifilm Corp | Ccd型固体撮像素子 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632776A (en) * | 1979-08-23 | 1981-04-02 | Sanyo Electric Co Ltd | Ccd image sensor |
| JPS574162A (en) * | 1980-06-10 | 1982-01-09 | Sony Corp | Manufacture of charge transfer device |
| JPS5726971A (en) * | 1980-07-24 | 1982-02-13 | Sanyo Electric Co Ltd | Solidstate image sensor |
-
1983
- 1983-09-29 JP JP58181465A patent/JPS6074475A/ja active Granted
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5632776A (en) * | 1979-08-23 | 1981-04-02 | Sanyo Electric Co Ltd | Ccd image sensor |
| JPS574162A (en) * | 1980-06-10 | 1982-01-09 | Sony Corp | Manufacture of charge transfer device |
| JPS5726971A (en) * | 1980-07-24 | 1982-02-13 | Sanyo Electric Co Ltd | Solidstate image sensor |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62156858A (ja) * | 1985-12-28 | 1987-07-11 | Matsushita Electronics Corp | 固体撮像装置 |
| JPS63110668A (ja) * | 1986-10-28 | 1988-05-16 | Toshiba Corp | 固体撮像装置 |
| JP2007173390A (ja) * | 2005-12-20 | 2007-07-05 | Fujifilm Corp | Ccd型固体撮像素子 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0527271B2 (enExample) | 1993-04-20 |
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