JPS60736A - P型SiCの電極形成方法 - Google Patents

P型SiCの電極形成方法

Info

Publication number
JPS60736A
JPS60736A JP10858383A JP10858383A JPS60736A JP S60736 A JPS60736 A JP S60736A JP 10858383 A JP10858383 A JP 10858383A JP 10858383 A JP10858383 A JP 10858383A JP S60736 A JPS60736 A JP S60736A
Authority
JP
Japan
Prior art keywords
heat treatment
electrode
temperature
alloy layer
type sic
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP10858383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0519808B2 (enrdf_load_stackoverflow
Inventor
Toshitake Nakada
中田 俊武
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Original Assignee
Sanyo Electric Co Ltd
Sanyo Denki Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co Ltd, Sanyo Denki Co Ltd filed Critical Sanyo Electric Co Ltd
Priority to JP10858383A priority Critical patent/JPS60736A/ja
Publication of JPS60736A publication Critical patent/JPS60736A/ja
Publication of JPH0519808B2 publication Critical patent/JPH0519808B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
JP10858383A 1983-06-16 1983-06-16 P型SiCの電極形成方法 Granted JPS60736A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP10858383A JPS60736A (ja) 1983-06-16 1983-06-16 P型SiCの電極形成方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP10858383A JPS60736A (ja) 1983-06-16 1983-06-16 P型SiCの電極形成方法

Publications (2)

Publication Number Publication Date
JPS60736A true JPS60736A (ja) 1985-01-05
JPH0519808B2 JPH0519808B2 (enrdf_load_stackoverflow) 1993-03-17

Family

ID=14488484

Family Applications (1)

Application Number Title Priority Date Filing Date
JP10858383A Granted JPS60736A (ja) 1983-06-16 1983-06-16 P型SiCの電極形成方法

Country Status (1)

Country Link
JP (1) JPS60736A (enrdf_load_stackoverflow)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62192525U (enrdf_load_stackoverflow) * 1986-05-29 1987-12-07

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841070A (enrdf_load_stackoverflow) * 1971-09-27 1973-06-16

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4841070A (enrdf_load_stackoverflow) * 1971-09-27 1973-06-16

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62192525U (enrdf_load_stackoverflow) * 1986-05-29 1987-12-07

Also Published As

Publication number Publication date
JPH0519808B2 (enrdf_load_stackoverflow) 1993-03-17

Similar Documents

Publication Publication Date Title
US3323956A (en) Method of manufacturing semiconductor devices
JP3502724B2 (ja) 熱電材料
JPS63133650A (ja) 多結晶シリコン層上にシリサイドの接着層を形成する方法
JPH0328178A (ja) セラミック部品の接合方法及び接合セラミック構造物
US3209450A (en) Method of fabricating semiconductor contacts
US3959522A (en) Method for forming an ohmic contact
JPS6120132B2 (enrdf_load_stackoverflow)
JPS60736A (ja) P型SiCの電極形成方法
US2874453A (en) Applying metal coatings to molybdenum
US2124306A (en) Electrical device
JPS59214224A (ja) SiCの電極形成方法
US3240571A (en) Semiconductor device and method of producing it
JPS63112095A (ja) 黒鉛と金属材料との接合材及び接合方法
US3663321A (en) Alloy diode characteristics control method
US3171763A (en) Method for making silicon semiconductor devices
US3047437A (en) Method of making a rectifier
JPS6227518A (ja) 低膨張合金材の製法
JPS5873136A (ja) 半導体デバイスの製造方法
JPH0245976A (ja) 炭化ケイ素の電極形成方法
JPS5830145A (ja) 半導体装置の製造方法
JPS6220338A (ja) 半導体装置の製造方法
JP3698528B2 (ja) 炭化ケイ素−金属複合体とその製造方法
US3214653A (en) Gold bonded, boron containing semiconductor devices
JPS6054774B2 (ja) 半導体素子の製法
JPS6273648A (ja) 気密ガラス端子