JPS60736A - P型SiCの電極形成方法 - Google Patents
P型SiCの電極形成方法Info
- Publication number
- JPS60736A JPS60736A JP10858383A JP10858383A JPS60736A JP S60736 A JPS60736 A JP S60736A JP 10858383 A JP10858383 A JP 10858383A JP 10858383 A JP10858383 A JP 10858383A JP S60736 A JPS60736 A JP S60736A
- Authority
- JP
- Japan
- Prior art keywords
- heat treatment
- electrode
- temperature
- alloy layer
- type sic
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 230000015572 biosynthetic process Effects 0.000 title claims abstract 3
- 238000010438 heat treatment Methods 0.000 claims abstract description 24
- 229910045601 alloy Inorganic materials 0.000 claims abstract description 20
- 239000000956 alloy Substances 0.000 claims abstract description 19
- 230000005496 eutectics Effects 0.000 claims abstract description 11
- 238000000034 method Methods 0.000 claims abstract description 8
- 229910052710 silicon Inorganic materials 0.000 abstract description 2
- 229910021364 Al-Si alloy Inorganic materials 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 229910003925 SiC 1 Inorganic materials 0.000 abstract 1
- 239000000203 mixture Substances 0.000 description 6
- 229910018170 Al—Au Inorganic materials 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 229910001385 heavy metal Inorganic materials 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electrodes Of Semiconductors (AREA)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10858383A JPS60736A (ja) | 1983-06-16 | 1983-06-16 | P型SiCの電極形成方法 |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP10858383A JPS60736A (ja) | 1983-06-16 | 1983-06-16 | P型SiCの電極形成方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| JPS60736A true JPS60736A (ja) | 1985-01-05 |
| JPH0519808B2 JPH0519808B2 (enrdf_load_stackoverflow) | 1993-03-17 |
Family
ID=14488484
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP10858383A Granted JPS60736A (ja) | 1983-06-16 | 1983-06-16 | P型SiCの電極形成方法 |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS60736A (enrdf_load_stackoverflow) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62192525U (enrdf_load_stackoverflow) * | 1986-05-29 | 1987-12-07 |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4841070A (enrdf_load_stackoverflow) * | 1971-09-27 | 1973-06-16 |
-
1983
- 1983-06-16 JP JP10858383A patent/JPS60736A/ja active Granted
Patent Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS4841070A (enrdf_load_stackoverflow) * | 1971-09-27 | 1973-06-16 |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62192525U (enrdf_load_stackoverflow) * | 1986-05-29 | 1987-12-07 |
Also Published As
| Publication number | Publication date |
|---|---|
| JPH0519808B2 (enrdf_load_stackoverflow) | 1993-03-17 |
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