JPS6071667U - Target for sputtering - Google Patents

Target for sputtering

Info

Publication number
JPS6071667U
JPS6071667U JP16376083U JP16376083U JPS6071667U JP S6071667 U JPS6071667 U JP S6071667U JP 16376083 U JP16376083 U JP 16376083U JP 16376083 U JP16376083 U JP 16376083U JP S6071667 U JPS6071667 U JP S6071667U
Authority
JP
Japan
Prior art keywords
sputtering
sputtering target
target
heat treatment
rapid cooling
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
JP16376083U
Other languages
Japanese (ja)
Inventor
西山　東洋雄
淳 金平
Original Assignee
オリンパス光学工業株式会社
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by オリンパス光学工業株式会社 filed Critical オリンパス光学工業株式会社
Priority to JP16376083U priority Critical patent/JPS6071667U/en
Publication of JPS6071667U publication Critical patent/JPS6071667U/en
Pending legal-status Critical Current

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Abstract

(57)【要約】本公報は電子出願前の出願データであるた
め要約のデータは記録されません。(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

【図面の簡単な説明】[Brief explanation of drawings]

第１図及び第２図は従来例に係り、第１図は非磁性ター
ゲットを用いてハイレートのスザツタリングを可能、と
するマグネトロンスパッタ装置を示す概略側面図、第２
図は従来の磁性ターゲットを用いた場合におけるマグネ
トロンスパッタ装置を示す概略側面図、第３図及び第４
図は本考案の第１実施例に係り、第３図は第１実施例の
磁性ターゲットを用いた場合における磁束を示す概略側
面図、第４図は第３図の動作説明用の等価回路図である
。 ２・・・・・・磁石、４・・・・・・基板、１１・・・
・・・磁性ターゲット、Φ□、Φ２・・・・・・磁束、
Ｒ１９Ｒ２・・・・・・磁気抵抗、１ｍ・・・・・・起
磁力、μ・・・・・・透磁率。1 and 2 relate to a conventional example, and FIG. 1 is a schematic side view showing a magnetron sputtering apparatus that enables high-rate splattering using a non-magnetic target;
The figure is a schematic side view showing a magnetron sputtering apparatus when using a conventional magnetic target, Figures 3 and 4.
The figure relates to the first embodiment of the present invention, FIG. 3 is a schematic side view showing the magnetic flux when the magnetic target of the first embodiment is used, and FIG. 4 is an equivalent circuit diagram for explaining the operation of FIG. 3. It is. 2...Magnet, 4...Substrate, 11...
...Magnetic target, Φ□, Φ2...Magnetic flux,
R19R2...Magnetic resistance, 1m...Magnetomotive force, μ...Magnetic permeability.

Claims (3)

【実用新案登録請求の範囲】[Scope of utility model registration request] （１）　　マグネットの一方の面にターゲットを配置し
たマグネトロンスパッタ装置にてハイレートスパッタリ
ングするためのスパッタリング用ターゲットにおいて、
熱処理又は機械加工処理の少（とも一方の処理手段にて
スパッタリング用ターゲットの透磁率又は飽和磁束密度
の少（とも一方を低下させたことを特徴とするスパッタ
リング用ターゲット。(1) In a sputtering target for high-rate sputtering with a magnetron sputtering device in which a target is placed on one side of a magnet,
A sputtering target characterized in that either heat treatment or mechanical processing is performed to reduce the magnetic permeability or saturation magnetic flux density of the sputtering target. （２）前記処理手段は、加熱後の徐冷又は急冷又は急冷
・焼戻し等の熱処理手段としたことを特徴とする実用新
案登録請求の範囲第１項記載のスパッタリング用ターゲ
ット。(2) The sputtering target according to claim 1, wherein the treatment means is a heat treatment means such as slow cooling or rapid cooling after heating, or rapid cooling and tempering. （３）　　前記処理手段は、鍛造又は圧延加工等の機械
加工処理手段としたことを特徴とする実用新案登録請求
の範囲第１項記載のスパッタリング用ターゲット。(3) The sputtering target according to claim 1, wherein the processing means is a machining processing means such as forging or rolling.
JP16376083U 1983-10-21 1983-10-21 Target for sputtering Pending JPS6071667U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16376083U JPS6071667U (en) 1983-10-21 1983-10-21 Target for sputtering

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16376083U JPS6071667U (en) 1983-10-21 1983-10-21 Target for sputtering

Publications (1)

Publication Number Publication Date
JPS6071667U true JPS6071667U (en) 1985-05-21

Family

ID=30359218

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16376083U Pending JPS6071667U (en) 1983-10-21 1983-10-21 Target for sputtering

Country Status (1)

Country Link
JP (1) JPS6071667U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011214039A (en) * 2010-03-31 2011-10-27 Sanyo Special Steel Co Ltd Method for producing sputtering target material

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5250938A (en) * 1975-10-22 1977-04-23 Nippon Electric Co Spattering device
JPS5424231A (en) * 1977-07-25 1979-02-23 Motorola Inc Method and apparatus for magnetronnsputtering ferro magnetic materials
JPS58110672A (en) * 1981-12-24 1983-07-01 Fujitsu Ltd Magnetron sputtering method

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5250938A (en) * 1975-10-22 1977-04-23 Nippon Electric Co Spattering device
JPS5424231A (en) * 1977-07-25 1979-02-23 Motorola Inc Method and apparatus for magnetronnsputtering ferro magnetic materials
JPS58110672A (en) * 1981-12-24 1983-07-01 Fujitsu Ltd Magnetron sputtering method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011214039A (en) * 2010-03-31 2011-10-27 Sanyo Special Steel Co Ltd Method for producing sputtering target material

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