JPS6071593A - Growing method of crystal - Google Patents
Growing method of crystalInfo
- Publication number
- JPS6071593A JPS6071593A JP17725583A JP17725583A JPS6071593A JP S6071593 A JPS6071593 A JP S6071593A JP 17725583 A JP17725583 A JP 17725583A JP 17725583 A JP17725583 A JP 17725583A JP S6071593 A JPS6071593 A JP S6071593A
- Authority
- JP
- Japan
- Prior art keywords
- crystal
- shaft
- melt
- seed
- laser beam
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B15/00—Single-crystal growth by pulling from a melt, e.g. Czochralski method
- C30B15/20—Controlling or regulating
- C30B15/22—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal
- C30B15/26—Stabilisation or shape controlling of the molten zone near the pulled crystal; Controlling the section of the crystal using television detectors; using photo or X-ray detectors
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
Description
【発明の詳細な説明】 （ａ）発明の技術分野 本発明は結晶成長方法に関する。[Detailed description of the invention] (a) Technical field of the invention The present invention relates to a crystal growth method.
（ｂ）技術の背景
本発明は結晶成長中の結晶インゴットに目印を付す方法
に係る。(b) Background of the Technology The present invention relates to a method of marking a crystal ingot during crystal growth.
（Ｃ）従来技術の問題点
例えばシリコン等の単結晶成長を行う所謂、チョクラル
スキー法と呼ばれる結晶引上法に於いて。(C) Problems with the Prior Art For example, in the so-called Czochralski method, a crystal pulling method for growing a single crystal of silicon or the like.
例えばシード軸の引上げ速度、或いは坩堝の回転速度環
、結晶育成に係るパラメータを変化させた時、該変化点
を結晶インゴット完成後正確に知ることが必要となるこ
とがある。For example, when changing the pulling speed of the seed shaft, the rotation speed ring of the crucible, or parameters related to crystal growth, it may be necessary to accurately know the point of change after the crystal ingot is completed.
係る際、従来、結晶成長中の種結晶装着のシード軸の重
さく引上げ重さ）或いは、シード軸の引上げ距離から換
算して、インゴ・ノド位置を推定していた。然し、結晶
インゴ・ノド完成後、成長条件の変化点を高い信頼性で
めるのは至難である。In this case, conventionally, the ingo/nod position has been estimated by converting from the weight of the seed shaft attached to the seed crystal during crystal growth (pulling weight) or the pulling distance of the seed shaft. However, it is extremely difficult to reliably determine the point at which the growth conditions change after the crystal ingot is completed.
（ｄ）発明の目的 本発明の目的は前記の難点を解決する事、即ち。(d) Purpose of the invention The object of the present invention is to solve the above-mentioned difficulties, namely.
成長中の結晶インゴットに目印（マーク）を付与する方
法を提示するものである。A method for adding marks to a growing crystal ingot is presented.
（ｅ）発明の構成
前記目的は、結晶成長中の結晶インゴ・ノドにレーザビ
ームを照射して該結晶インゴットに印を付けることによ
り達成される。(e) Structure of the Invention The above object is achieved by irradiating a laser beam onto the nodule of the crystal ingot during crystal growth to mark the crystal ingot.
（「）発明の実施例
以下９本発明の結晶成長方法実施例を図面に従って詳細
に説明する。(') Embodiments of the Invention Nine embodiments of the crystal growth method of the present invention will be described in detail below with reference to the drawings.
添付図面はチョクラルスキー法による抵抗加熱型引上げ
炉の構造を示す断側面図である。The attached drawing is a cross-sectional side view showing the structure of a resistance heating type pulling furnace using the Czochralski method.
図に於いて、１は炉心部にある石英坩堝、２は前記石英
坩堝１中の多結晶とドープ材とを熔解した結晶メルト
３は前記メルト２の６部に種結晶４を浸漬して引上げる
シード軸、５は坩堝１を取り囲む抵抗体内蔵の円筒形黒
鉛発熱体、６はステンレスからなる前記発熱体５外周の
熱遮蔽体（炉筺体）、７と８は炉筺体６に設けられた結
晶成長の状態を監視する覗き窓、９は結晶メルトの温度
計測等をなす輻射温度針、及び１０は本発明の要部手段
に係る例えばＮｄ”： ＹＡＧレーザまたはＣＯｚレー
ザ光源、該光源１０は図示の様に成長結晶体１１と結晶
メルト２との境界面１２に向は照射される様に配置され
る。In the figure, 1 is a quartz crucible in the reactor core, and 2 is a crystal melt in which the polycrystal and dope in the quartz crucible 1 are melted.
3 is a seed shaft for dipping and pulling up the seed crystal 4 into 6 parts of the melt 2; 5 is a cylindrical graphite heating element with a built-in resistor that surrounds the crucible 1; 6 is a heat shield around the outer periphery of the heating element 5 made of stainless steel. 7 and 8 are viewing windows provided in the furnace casing 6 to monitor the state of crystal growth; 9 is a radiation temperature needle for measuring the temperature of the crystal melt; and 10 is a main means of the present invention. For example, a Nd'':YAG laser or a COz laser light source, the light source 10 is arranged so as to irradiate the interface 12 between the growing crystal 11 and the crystal melt 2 as shown in the figure.
尚１図中の１３は前記メルト２の攪拌と温度を一定とす
る坩堝回転用モータ、及び１５は前記シード軸３の回転
並びに引上げ駆動用モータである。Reference numeral 13 in FIG. 1 is a crucible rotation motor for stirring the melt 2 and keeping the temperature constant, and 15 is a motor for driving the rotation and pulling up of the seed shaft 3.
結晶成長時は２例えばＡｒガス約１０）−ル程度の炉内
雰囲気となし、温度１４ｏｏ℃強（シリコン）の結晶メ
ルト６部に目的方位の種結晶４を接触させ熱平衡状態と
なした後、前記シード軸モータ１５によりシード軸３を
徐回転させ、この場合、結晶メルト自由面の温度を徐冷
しながらシード軸を引上げる。During crystal growth, the atmosphere in the furnace is about 2, for example, Ar gas (about 10) -L, and after bringing the seed crystal 4 in the desired orientation into contact with 6 parts of the crystal melt (silicon) at a temperature of just over 140° C., a state of thermal equilibrium is established. The seed shaft 3 is slowly rotated by the seed shaft motor 15, and in this case, the seed shaft is pulled up while slowly cooling the temperature of the free surface of the crystal melt.
本発明の結晶成長方法は、前記引上げ中に於いて、引上
げ結晶のパラメータとして例えばシード軸の引上げ速度
１回転速度を変えた時、あるいは坩堝の回転速度を変え
た時５．同時に固液境面１２に向はレーザ光源１０から
のビーム１４を照射する。該照射ビームを当てることに
よりその部分での結晶が溶融し、スジが形成され、直接
、結晶体（成長中結晶インゴット）１１に対して前記生
成のパラメータ変化の目印が刻入される。In the crystal growth method of the present invention, during the above-mentioned pulling, when a parameter of the pulled crystal is changed, for example, the pulling speed of the seed shaft per revolution, or the rotation speed of the crucible is changed.5. At the same time, the solid-liquid interface 12 is irradiated with a beam 14 from the laser light source 10. By applying the irradiation beam, the crystal in that part is melted, a streak is formed, and a mark of the parameter change of the generation is directly engraved on the crystal body (growing crystal ingot) 11.
レーザビームは位相が揃い良好な指向性を有するので局
部的に鮮明な目印を付すことが出来る。Since the laser beam is in phase and has good directivity, it is possible to make a clear mark locally.
然もそのビームはエネルギ強度、断面形状、更に指向位
置等の制御が精度高く且つ容易になされる。However, the energy intensity, cross-sectional shape, pointing position, etc. of the beam can be controlled with high accuracy and ease.
（ｇ）発明の効果
前記実施例により詳細に説明した本発明の結晶成長方法
によれば、引上げの結晶成長インゴット１１に直接、マ
ーキングを正確な位置に付与することが可能となる。係
る観点から本発明の実用的価値が大きい。(g) Effects of the Invention According to the crystal growth method of the present invention, which has been explained in detail in the above embodiments, markings can be directly applied to the pulled crystal growth ingot 11 at accurate positions. From this point of view, the present invention has great practical value.
ＫＷ図は１本発明の結晶成長装置構成実施例を示す断側
面図である。The KW diagram is a cross-sectional side view showing an embodiment of the structure of a crystal growth apparatus according to the present invention.
Claims (1)
該結晶インゴットに印を付けることを特徴とする結晶成
長方法。A crystal growth method characterized by irradiating a crystal ingot during crystal growth with a laser beam to mark the crystal ingot.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17725583A JPS6071593A (en) | 1983-09-26 | 1983-09-26 | Growing method of crystal |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP17725583A JPS6071593A (en) | 1983-09-26 | 1983-09-26 | Growing method of crystal |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6071593A true JPS6071593A (en) | 1985-04-23 |
Family
ID=16027873
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP17725583A Pending JPS6071593A (en) | 1983-09-26 | 1983-09-26 | Growing method of crystal |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6071593A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992019797A1 (en) * | 1991-04-26 | 1992-11-12 | Mitsubishi Materials Corporation | Process for pulling up single crystal |
| CN1314080C (en) * | 1993-01-18 | 2007-05-02 | 株式会社半导体能源研究所 | MIS semiconductor device manufacture method |
| KR101287275B1 (en) * | 2005-06-10 | 2013-07-17 | 제너럴 일렉트릭 캄파니 | Free-formed quartz glass ingots and method for making the same |
-
1983
- 1983-09-26 JP JP17725583A patent/JPS6071593A/en active Pending
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1992019797A1 (en) * | 1991-04-26 | 1992-11-12 | Mitsubishi Materials Corporation | Process for pulling up single crystal |
| US5408952A (en) * | 1991-04-26 | 1995-04-25 | Mitsubishi Materials Corporation | Single crystal growth method |
| CN1314080C (en) * | 1993-01-18 | 2007-05-02 | 株式会社半导体能源研究所 | MIS semiconductor device manufacture method |
| KR101287275B1 (en) * | 2005-06-10 | 2013-07-17 | 제너럴 일렉트릭 캄파니 | Free-formed quartz glass ingots and method for making the same |
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