JPS6066893A - 半導体レ−ザ装置及びその製造方法 - Google Patents

半導体レ−ザ装置及びその製造方法

Info

Publication number
JPS6066893A
JPS6066893A JP17537383A JP17537383A JPS6066893A JP S6066893 A JPS6066893 A JP S6066893A JP 17537383 A JP17537383 A JP 17537383A JP 17537383 A JP17537383 A JP 17537383A JP S6066893 A JPS6066893 A JP S6066893A
Authority
JP
Japan
Prior art keywords
layer
type
cladding layer
type cladding
grown
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17537383A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0449792B2 (cs
Inventor
Naoto Mogi
茂木　直人
Yukio Watanabe
幸雄 渡辺
Naohiro Shimada
島田　直弘
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Toshiba Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Corp filed Critical Toshiba Corp
Priority to JP17537383A priority Critical patent/JPS6066893A/ja
Publication of JPS6066893A publication Critical patent/JPS6066893A/ja
Publication of JPH0449792B2 publication Critical patent/JPH0449792B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/2054—Methods of obtaining the confinement
    • H01S5/2059—Methods of obtaining the confinement by means of particular conductivity zones, e.g. obtained by particle bombardment or diffusion
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2231—Buried stripe structure with inner confining structure only between the active layer and the upper electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/223—Buried stripe structure
    • H01S5/2232—Buried stripe structure with inner confining structure between the active layer and the lower electrode

Landscapes

  • Semiconductor Lasers (AREA)
JP17537383A 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法 Granted JPS6066893A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17537383A JPS6066893A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17537383A JPS6066893A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法

Publications (2)

Publication Number Publication Date
JPS6066893A true JPS6066893A (ja) 1985-04-17
JPH0449792B2 JPH0449792B2 (cs) 1992-08-12

Family

ID=15994961

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17537383A Granted JPS6066893A (ja) 1983-09-22 1983-09-22 半導体レ−ザ装置及びその製造方法

Country Status (1)

Country Link
JP (1) JPS6066893A (cs)

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690586A (en) * 1979-12-21 1981-07-22 Seiji Yasu Semiconductor laser and manufacture thereof

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5690586A (en) * 1979-12-21 1981-07-22 Seiji Yasu Semiconductor laser and manufacture thereof

Also Published As

Publication number Publication date
JPH0449792B2 (cs) 1992-08-12

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