JPS6066827A - シリコンウエハ−中への結晶欠陥導入制御法 - Google Patents

シリコンウエハ−中への結晶欠陥導入制御法

Info

Publication number
JPS6066827A
JPS6066827A JP17678183A JP17678183A JPS6066827A JP S6066827 A JPS6066827 A JP S6066827A JP 17678183 A JP17678183 A JP 17678183A JP 17678183 A JP17678183 A JP 17678183A JP S6066827 A JPS6066827 A JP S6066827A
Authority
JP
Japan
Prior art keywords
heat treatment
temperature
defect
wafer
defects
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP17678183A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0469422B2 (enrdf_load_stackoverflow
Inventor
Yasushi Shimanuki
島貫　康
Hisaaki Suga
須賀　久明
Mitsuhiro Kainuma
貝沼　光浩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsubishi Metal Corp
Original Assignee
Mitsubishi Metal Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsubishi Metal Corp filed Critical Mitsubishi Metal Corp
Priority to JP17678183A priority Critical patent/JPS6066827A/ja
Publication of JPS6066827A publication Critical patent/JPS6066827A/ja
Publication of JPH0469422B2 publication Critical patent/JPH0469422B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/322—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections
    • H01L21/3221—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to modify their internal properties, e.g. to produce internal imperfections of silicon bodies, e.g. for gettering

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
JP17678183A 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法 Granted JPS6066827A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP17678183A JPS6066827A (ja) 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP17678183A JPS6066827A (ja) 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法

Publications (2)

Publication Number Publication Date
JPS6066827A true JPS6066827A (ja) 1985-04-17
JPH0469422B2 JPH0469422B2 (enrdf_load_stackoverflow) 1992-11-06

Family

ID=16019724

Family Applications (1)

Application Number Title Priority Date Filing Date
JP17678183A Granted JPS6066827A (ja) 1983-09-24 1983-09-24 シリコンウエハ−中への結晶欠陥導入制御法

Country Status (1)

Country Link
JP (1) JPS6066827A (enrdf_load_stackoverflow)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293621A (ja) * 1986-06-12 1987-12-21 Nec Corp 半導体集積回路素子
JPH04130732A (ja) * 1990-09-21 1992-05-01 Komatsu Electron Metals Co Ltd 半導体ウェーハの熱処理方法
WO2006008915A1 (ja) * 2004-07-20 2006-01-26 Shin-Etsu Handotai Co., Ltd. シリコンエピタキシャルウェーハおよびその製造方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538098A (en) * 1978-09-08 1980-03-17 Ibm Method of increasing gettering effect existing in semiconductor substrate bulk

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5538098A (en) * 1978-09-08 1980-03-17 Ibm Method of increasing gettering effect existing in semiconductor substrate bulk

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS62293621A (ja) * 1986-06-12 1987-12-21 Nec Corp 半導体集積回路素子
JPH04130732A (ja) * 1990-09-21 1992-05-01 Komatsu Electron Metals Co Ltd 半導体ウェーハの熱処理方法
WO2006008915A1 (ja) * 2004-07-20 2006-01-26 Shin-Etsu Handotai Co., Ltd. シリコンエピタキシャルウェーハおよびその製造方法

Also Published As

Publication number Publication date
JPH0469422B2 (enrdf_load_stackoverflow) 1992-11-06

Similar Documents

Publication Publication Date Title
US20080102287A1 (en) Silicon wafer for igbt and method for producing same
EP0971055A2 (en) "Method for heat treatment of silicon substrate, substrate treated by the method, and epitaxial wafer utilizing the substrate
JP2005033217A (ja) シリコン半導体ウエハの製造方法
US5505157A (en) Low hydrogen-content silicon crystal with few micro-defects caused from annealing, and its manufacturing methods
US6337219B1 (en) Method of producing silicon single and single crystal silicon wafer
JP3279527B2 (ja) 半導体シリコン基板におけるｉｇ能の評価方法、及び半導体シリコン基板の製造方法
JPS6066827A (ja) シリコンウエハ−中への結晶欠陥導入制御法
JP2936916B2 (ja) シリコン単結晶の品質評価方法
Sparks et al. The use of rapid thermal annealing for studying transition metals in silicon
Higgs et al. Photoluminescence characterization of defects in Si and SiGestructures
Wu et al. Microstructural evolution of mechanically deformed polycrystalline silicon for kerfless photovoltaics
JP6716344B2 (ja) シリコンウェーハの熱処理方法
JP4346628B2 (ja) シリコン結晶内窒素濃度算出用の換算係数の決定方法、窒素濃度測定方法、シリコンウエハの製造方法、及び半導体装置の製造方法
JP2002334886A (ja) シリコンウェーハの酸素析出物密度の評価方法及びその評価方法に基づいて製造されたシリコンウェーハ
JPH1012689A (ja) 半導体基板の検査方法とモニター用半導体基板
JPH11297704A (ja) 酸素析出物密度の評価方法
JP4346629B2 (ja) シリコン結晶中の窒素濃度測定方法、シリコン結晶内窒素濃度算出用の換算係数の決定方法、シリコンウエハの製造方法、及び半導体装置の製造方法
Suezawa Formation energy of interstitial Si in Au-doped Si determined by optical absorption measurements of H bound to interstitial Si
Hara Diffusion coefficient of hydrogen in silicon at an intermediate temperature
JPH05275436A (ja) シリコンウエーハの熱処理方法
JP4952871B2 (ja) シリコンウェーハの評価方法
JP2903520B2 (ja) シリコン単結晶の評価方法
Godbey et al. Single‐crystal germanium grown on (11̄02) sapphire by molecular beam epitaxy
JPH1059800A (ja) ＺｎＳｅ結晶の熱処理方法
JP2003152043A (ja) シリコン結晶の評価方法及び半導体装置の製造方法