JPS6065580A - Semiconductor photodetector - Google Patents
Semiconductor photodetectorInfo
- Publication number
- JPS6065580A JPS6065580A JP58173474A JP17347483A JPS6065580A JP S6065580 A JPS6065580 A JP S6065580A JP 58173474 A JP58173474 A JP 58173474A JP 17347483 A JP17347483 A JP 17347483A JP S6065580 A JPS6065580 A JP S6065580A
- Authority
- JP
- Japan
- Prior art keywords
- layer
- type
- inp
- back surface
- ingaas
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 abstract description 11
- 230000001681 protective effect Effects 0.000 abstract description 3
- 230000031700 light absorption Effects 0.000 description 4
- 238000003486 chemical etching Methods 0.000 description 3
- 230000003287 optical effect Effects 0.000 description 3
- 238000000206 photolithography Methods 0.000 description 3
- 238000004891 communication Methods 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000013307 optical fiber Substances 0.000 description 2
- 230000002250 progressing effect Effects 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 241000864742 Temesa Species 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000015556 catabolic process Effects 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000006866 deterioration Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- HQWPLXHWEZZGKY-UHFFFAOYSA-N diethylzinc Chemical compound CC[Zn]CC HQWPLXHWEZZGKY-UHFFFAOYSA-N 0.000 description 1
- 150000004678 hydrides Chemical class 0.000 description 1
- 239000012535 impurity Substances 0.000 description 1
- 238000005268 plasma chemical vapour deposition Methods 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 229920003002 synthetic resin Polymers 0.000 description 1
- 239000000057 synthetic resin Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
- H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier
- H01L31/107—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes
- H01L31/1075—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier the potential barrier working in avalanche mode, e.g. avalanche photodiodes in which the active layers, e.g. absorption or multiplication layers, form an heterostructure, e.g. SAM structure
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Light Receiving Elements (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は半導体受光素子に関するものである１゜光通信
システムの実用化を月相して、低損失光ファイバーの開
発が進められているが、光源としての半導体レーザ（以
下ＬＩ）という）及び半導体発光素子（以下ＬＥＤとい
う）と半導体光検出器としてのフォトダイオード（以下
ＰＤという）及びアバランシフォトダイオード（以下Ａ
ＰＤという）の開発が精力的に行なわれている。これら
ＬＤ及びＬＥＤ の発光波長は、０．８ ａｍ 〜１．
６１ｔｍ域のもの、例えばＧａＡｓ−ＧａＡｔＡｓ 素
あるいはＩｎＦ−ＩｎＧａＡｓＦ系糸のものが主流とな
っている。この中で光ファイバーの伝送損失の低い１．
１μｍ〜１．６μｍ波長域においては光源としてはＩ
ｎＰ −ＩｎＧａＡｓＦ系のものが主流であり、この光
を検出するためにはＧｅ−ＡＰＤが用いられている。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a semiconductor light-receiving element.Along with the practical application of 1° optical communication systems, development of low-loss optical fibers is progressing. A semiconductor light emitting device (hereinafter referred to as LED), a photodiode (hereinafter referred to as PD) as a semiconductor photodetector, and an avalanche photodiode (hereinafter referred to as A
(referred to as PD) is being actively developed. The emission wavelength of these LDs and LEDs is 0.8 am to 1.5 am.
Threads in the 61 tm range, for example, GaAs-GaAtAs threads or InF-InGaAsF threads, are the mainstream. Among these, optical fiber has low transmission loss 1.
In the 1 μm to 1.6 μm wavelength range, I
The nP-InGaAsF type is the mainstream, and Ge-APD is used to detect this light.
しかし、とのＧｅ−ＡＰＤ は暗電流と過剰雑音が大き
く、また混層特性も良くないため必ずしも光通信用光信
号検出器としては最適でなく、これに代わる■−ｖ族化
合物半導体材料によるＰＤあるいはＡＰＤの研究開発が
進め−られている。However, the Ge-APD has a large dark current and excessive noise, and also has poor mixed layer characteristics, so it is not necessarily optimal as an optical signal detector for optical communications. Research and development of APD is progressing.
現在、半導体受光素子の構造としては、プレーナ型が主
流となっている。この構造は、信頼性に優れ、量産性に
向くという利点をもっているが、不純物拡散によりＰＮ
接合を形成するため、Ａ、りＤにした場合拡散エツジで
異常増倍を生ずる等の問題も持っている。これに対して
メサ型受光素子は、素子構造が単純であり、ＰＮ界面が
平坦であること諷ら均一増倍することが容易であるが、
接合端面が蕗出していることから信頼性の面で問題があ
る。Currently, the planar type is the mainstream structure for semiconductor light-receiving elements. This structure has the advantage of being highly reliable and suitable for mass production, but due to impurity diffusion, PN
In order to form a junction, if A or D is used, there are also problems such as abnormal multiplication occurring at the diffusion edge. On the other hand, mesa-type photodetectors have a simple device structure and a flat PN interface, which makes it easy to achieve uniform multiplication.
There is a problem in terms of reliability because the joint end surface is protruding.
次にＩ ｎＰ −ＩｎＧａＡｓ系ＡＰＤを例にしテメサ
型受光素子の構造について説明する。Next, the structure of a Temesa type light receiving element will be explained using an InP-InGaAs APD as an example.
第１図はＩｎｐ −ＩｎＧａＡｓメサ型ＡＰＤの模式断
面図を示している。ｎ型Ｉｎｐ基板１１上に、ｎ−Ｉｎ
１’ バー）７７層１２、ｎ −Ｉ ｎＧａＡｓ 光吸
収層１３、ｎ−ＩｎＰｎ五層、Ｐ＋−ＩｎＰ層１５が形
成され、これをメサ形状に成形するため化学エツチング
し、この後ｐ側電極１６を形成して素子を完成している
。これらｎ −ＩｎＰｎ五層とＰ＋−ＩｎＰ層 １５と
−の界面がメサ端部で露出していること示第１図から明
らかである。FIG. 1 shows a schematic cross-sectional view of an Inp-InGaAs mesa type APD. On the n-type Inp substrate 11, n-In
1' bar) 77 layer 12, n-InGaAs light absorption layer 13, n-InPn five layers, and P+-InP layer 15 are formed, which are chemically etched to form a mesa shape, and then the p-side electrode 16 is formed. is formed to complete the device. It is clear from FIG. 1 that the interface between these five n-InPn layers and the P+-InP layers 15 and - is exposed at the mesa end.
この様にＰＮ接合が端部で蕗出していると、その露出個
所から素子の劣化を生じたり、安定動作をしなくなる欠
点がある。このため、メサを形成した後、合成樹脂で埋
め込んだり、あるいはＳｉｎ。If the PN junction protrudes at the end in this way, there are drawbacks such as deterioration of the element from the exposed portion and unstable operation. For this reason, after forming the mesa, it is filled with synthetic resin or sin.
やＳｉＮ膜で表面をコーティングする方法等が試みられ
ているが、外気などの影曽により特性に不安定さかある
欠点があった。Attempts have been made to coat the surface with SiN film or SiN film, but these methods have the drawback of unstable characteristics due to the influence of external air.
本発明の目的は、これらの問題点を解決し、メサ型受光
素子の端面保護を工夫して特性が良好で信頼性の高い半
導体受光素子を提供するものである。An object of the present invention is to solve these problems and provide a semiconductor light-receiving element with good characteristics and high reliability by devising end face protection of a mesa-type light-receiving element.
本発明の半導体受光素子の構成は、第１の導電型の半導
体層と、この第一の導電型と反対の導電型である第二の
導電型を示す半導体層からなる半導体受光部を、半絶縁
性基板中に形成された錐台形状の凹部に形成したことを
特徴とする。The structure of the semiconductor light-receiving element of the present invention is such that the semiconductor light-receiving section is made up of a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type which is an opposite conductivity type to the first conductivity type. It is characterized by being formed in a truncated cone-shaped recess formed in an insulating substrate.
本発明の半導体受光素子は、メサ形状に作られた半絶縁
性基板中にメサ型受光素子を形成することによりメサ端
部をその半絶縁性基板で覆うことを特徴とする。The semiconductor light-receiving device of the present invention is characterized in that a mesa-type light-receiving device is formed in a semi-insulating substrate formed in a mesa shape, and the mesa end portion is covered with the semi-insulating substrate.
次に本発明を図面により詳細に説明する。Next, the present invention will be explained in detail with reference to the drawings.
第２図は本発明の実施例の断面図で、ＩｎＰ −ＩｎＧ
ａＡｓ系ＡＰＤに適用した場合を示している。FIG. 2 is a cross-sectional view of an embodiment of the present invention.
The case is shown when applied to an aAs-based APD.
この実施例は、半絶縁性基板２１に形成された錐台形状
の凹部すなわちメサ形状の凹部に、ｎ＋−ＩｎＰバッフ
ァ層２２ 、ｎ −ＩｎＧａＡｓ光吸収層２３、ｎ−Ｉ
ｎＰ層２４、ｐ＋−ＩｎＰ層２層上５成した後、基板２
１を加工して裏面にｎ側電極２８を設け、またＰ −Ｉ
ｎ２層２５上からＰ電極２７を形成し、表面保護膜２６
を形成して素子を完成している。In this embodiment, an n+-InP buffer layer 22, an n-InGaAs light absorption layer 23, an n-I
After forming the nP layer 24 and the p+-InP layer 2, the substrate 2
1 to provide an n-side electrode 28 on the back surface, and
A P electrode 27 is formed on the n2 layer 25, and a surface protective film 26 is formed.
is formed to complete the device.
次にこの実施例の素子製法についで説明する。Next, the device manufacturing method of this example will be explained.
まず半絶縁性ＩｎＰ基板２１ にフォトリングラフィと
化学エツチングで円錐台状あるいは四角錐台状の凹部を
形成する。この基板２１を用いてハイドライドＶＰＢ法
で各層２２，２３，２４，２５を連続成長する。ｎ型層
２３．２４はアンドープ、１層２５はジエチル亜鉛（Ｄ
ＥＺｒ）でＺｎを、ｎ＋層（２２）はＨ２ＳでＳをドー
ピングしている。光吸収層となるＩｎＧａＡｓ 層２３
のキャリア濃度は３ Ｘ １０”ｃｍ”、ｎ−ＩｎＰ層
２４のキャリア温度は約８Ｘ１０”ｃｍ”、Ｐ＋−Ｉｎ
Ｐ層２層上５２ｘ１０ ｃｍ ％ｎ ＩｎＰ層２２はｌ
Ｘｌ０”ｃｍ ”程度である。各層の層厚はｎ −Ｉ
ｎＧａＡｓ層２３ は３μｍ程度、ｎ −ＩｎＰ層２４
は約１ μｍ程度、Ｐ −ＩｎＰ層２層上５μｍ程度と
なっている。これら各層成長後、受光部の埋め込み層板
外の部分はフォトリングラフィと化学エツチングを用い
て除去する。また、ｐ側電極２７はＴｉ７’Ｐｔ／Ａｕ
を用いており、表面保護膜２６はプラズマＣＶＤ法によ
るＳｉＮ膜を用いている。First, a concave portion in the shape of a truncated cone or a truncated quadrangular pyramid is formed in the semi-insulating InP substrate 21 by photolithography and chemical etching. Using this substrate 21, layers 22, 23, 24, and 25 are successively grown using the hydride VPB method. The n-type layers 23 and 24 are undoped, and the first layer 25 is diethylzinc (D
The n+ layer (22) is doped with S using H2S. InGaAs layer 23 serving as a light absorption layer
The carrier concentration of the n-InP layer 24 is about 8 x 10"cm, and the carrier temperature of the n-InP layer 24 is about 8 x 10"cm.
52x10 cm on top of P layer 2 %n InP layer 22 is l
It is about Xl0"cm". The layer thickness of each layer is n − I
The nGaAs layer 23 is about 3 μm thick, and the n-InP layer 24 is about 3 μm thick.
is about 1 μm, and about 5 μm above the two P-InP layers. After each of these layers is grown, the portion of the light-receiving portion outside the buried layer plate is removed using photolithography and chemical etching. Moreover, the p-side electrode 27 is made of Ti7'Pt/Au
The surface protection film 26 is a SiN film produced by plasma CVD.
この後成長ウェハー裏面を１５０μｍ〜２００μｍの厚
さに加工し、さらにこの裏面に電極を設けるため、フォ
トリングラフィと化学エツチングとを用いて裏面をｎ＋
−ＩｎＰ層２２に達するまでエツチングし、このｎ＋−
ＩｎＰ層２２に接触してこの裏面全面にＡｕＧｅＮｉを
蒸着しｎ側電極２８を形成している。After this, the back side of the growth wafer is processed to a thickness of 150 μm to 200 μm, and in order to provide electrodes on this back side, the back side is etched using photolithography and chemical etching.
- InP layer 22 is etched until it reaches this n+-
AuGeNi is vapor-deposited on the entire back surface in contact with the InP layer 22 to form an n-side electrode 28.
以上の様に製作された素子の特性は、ブレイクダウン電
圧が約１００■、０９ｖＢにおける暗電流は数１０ ｎ
Ａ程度であった。また、最大増倍率約５０倍程度が得ら
れ、受光面全面に渡って均一な増倍率を得ている。また
本発明の構造は半絶縁性基板の結晶中に受光部が埋込ま
れるので、メサ型に見られる様な特性の不安定さが見ら
れず、良好な素子特性を示した。The characteristics of the device manufactured as described above are that the breakdown voltage is approximately 100μ, and the dark current at 09vB is several tens of nanometers.
It was grade A. Further, a maximum multiplication factor of approximately 50 times is obtained, and a uniform multiplication factor is obtained over the entire light-receiving surface. Furthermore, in the structure of the present invention, since the light-receiving portion is embedded in the crystal of the semi-insulating substrate, instability of characteristics as seen in the mesa type was not observed, and good device characteristics were exhibited.
以上、この実施例はＩｎＰ −ＩｎＧａＡｓ系ＡＰＤに
ついて詳述したが、本発明は他の化合物半導体にも適用
できることは明らかである。Although this embodiment has been described in detail with respect to an InP-InGaAs-based APD, it is clear that the present invention can also be applied to other compound semiconductors.
第１図は従来のメサ型ＩｎＰ−ＩｎＧａＡｓ系ＡＰＤの
模式的断面図、第２図は本発明の実施例のＩｎＰ−Ｉｎ
ＧａＡｓ系ＡＰＤの模式的断面図である。図において、
１１・・・・・・ｎ−ＩｎＰ基板、１２・・・・・・ｎ
−ＩｎＰバッファ層、１３ 、 ２３ ・・＝＝ ｎ
−Ｉ ｎＧａＡｓ光吸収層、１４． ２４−− ｎ −
ＩｎＰ層、１５．２５−・・＝ Ｐ＋−ＩｎＰ層、１６
． ２７−＝−ｐ側電極、１７゜２８・・・・・・ｎ側
電極、２１・−・・・・半絶縁性ＩｎＰ基板、２２・・
・・・・ｎ”−ＩｎＰ層、２６・・・・・・表面保護膜
である。FIG. 1 is a schematic cross-sectional view of a conventional mesa-type InP-InGaAs APD, and FIG. 2 is a schematic cross-sectional view of a conventional mesa-type InP-InGaAs APD.
FIG. 2 is a schematic cross-sectional view of a GaAs-based APD. In the figure, 11...n-InP substrate, 12...n
-InP buffer layer, 13, 23...==n
-InGaAs light absorption layer, 14. 24--n-
InP layer, 15.25-...=P+-InP layer, 16
．． 27-=-p-side electrode, 17°28...n-side electrode, 21...semi-insulating InP substrate, 22...
. . . n”-InP layer, 26 . . . surface protective film.
Claims (1)
の導電型である第二の導電型の半導体層とからなる半導
体受光部を、半絶縁性基板中に形成された錐台形状の凹
部に形成したことを特徴とする半導体受光素子。A semiconductor light-receiving section consisting of a semiconductor layer of a first conductivity type and a semiconductor layer of a second conductivity type, which is a conductivity type opposite to the first conductivity type, is connected to a cone formed in a semi-insulating substrate. A semiconductor light-receiving element characterized by being formed in a trapezoidal recess.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58173474A JPS6065580A (en) | 1983-09-20 | 1983-09-20 | Semiconductor photodetector |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP58173474A JPS6065580A (en) | 1983-09-20 | 1983-09-20 | Semiconductor photodetector |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS6065580A true JPS6065580A (en) | 1985-04-15 |
Family
ID=15961151
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP58173474A Pending JPS6065580A (en) | 1983-09-20 | 1983-09-20 | Semiconductor photodetector |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS6065580A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289872A (en) * | 2020-10-29 | 2021-01-29 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Impurity-blocking band detector with inverted trapezoidal groove surface structure and preparation method thereof |
-
1983
- 1983-09-20 JP JP58173474A patent/JPS6065580A/en active Pending
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112289872A (en) * | 2020-10-29 | 2021-01-29 | 上海微波技术研究所（中国电子科技集团公司第五十研究所） | Impurity-blocking band detector with inverted trapezoidal groove surface structure and preparation method thereof |
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