JPS6065541A - Manufacture of semiconductor component part - Google Patents

Manufacture of semiconductor component part

Info

Publication number
JPS6065541A
JPS6065541A JP58175107A JP17510783A JPS6065541A JP S6065541 A JPS6065541 A JP S6065541A JP 58175107 A JP58175107 A JP 58175107A JP 17510783 A JP17510783 A JP 17510783A JP S6065541 A JPS6065541 A JP S6065541A
Authority
JP
Japan
Prior art keywords
lead frame
drying
bonded
die
paste
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58175107A
Other languages
Japanese (ja)
Other versions
JPH0638433B2 (en
Inventor
Hisao Kobayashi
一三男 小林
Kazuhiko Kumaki
熊木　和彦
Nobuhito Yamazaki
山崎　信人
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Shinkawa Ltd
Original Assignee
Shinkawa Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinkawa Ltd filed Critical Shinkawa Ltd
Priority to JP58175107A priority Critical patent/JPH0638433B2/en
Publication of JPS6065541A publication Critical patent/JPS6065541A/en
Publication of JPH0638433B2 publication Critical patent/JPH0638433B2/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147—Copper (Cu) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85065—Composition of the atmosphere being reducing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H01L2224/85053—Bonding environment
    • H01L2224/85054—Composition of the atmosphere
    • H01L2224/85075—Composition of the atmosphere being inert
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01006—Carbon [C]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01007—Nitrogen [N]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01029—Copper [Cu]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01047—Silver [Ag]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/01—Chemical elements
    • H01L2924/01082—Lead [Pb]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/14—Integrated circuits

Abstract

PURPOSE:To improve the bondability to a lead frame made of copper by drying the die bonded lead frame in a reduced atmosphere. CONSTITUTION:A lead frame bonded with a diode through Ag paste in the die bonding step is, for example, performed in the drying step 12 of the drying by allowing the lead frame to stand in an inert gas reduced atmosphere furnace made of 5-20% of H2 and the residue of N2 for 2-5min at 150-300 deg.C. Thus, since the ultrafinely oxidized film of the lead frame and impurities are reduced, the bonding strength of the wire in the step 3 can be improved.

Description

【発明の詳細な説明】 （発明の利用分野） 本発明はＩＣ，ＬＳＩ等の半導体部品の製造方法に係り
、特に鋸を素材とするリードフレームのボンディング工
程の改良に関する。DETAILED DESCRIPTION OF THE INVENTION (Field of Application of the Invention) The present invention relates to a method for manufacturing semiconductor components such as ICs and LSIs, and particularly to improvements in the bonding process of lead frames made of saws.

（発明の背景） 一般に、ボンディング工程は、第１図に示すように、リ
ードフレームにＡｇペーストを介してダイをボンディン
グするダイボンディング工程１が行われ、次Ｏこオーブ
ンによって前記Ａｇペーストを乾燥する乾燥工程２が行
われた後、前記リードフレートと前記ダイとにワイヤを
ボンディングすｚｎ　ノ　−＋ｙ　Ｊ’−ノ≦ゴノ　１
ツ力ゝ下号【に１□９Ｊ１（ダ；も釣　２前記リードフ
レームは、一般に４２アロイ材が用いられているが、最
近、原価低減を図るために、リードフレームとして安い
鉄入り銅や錫入り銅の材料を使用する傾向にある。とこ
ろで、前記鋼材は温度を上げると酸化し易い。そこで従
来は、前記ワイヤボンディング工程３は還元算量気中で
作業が行われている。し力１しながら、前記乾燥工程２
はオーブンによる乾燥であるので、この乾燥工程２でリ
ードフレートが酸化すると同時に、Ａｇペースト中に含
まれている不純物がリードフレームに付着し、次のワイ
ヤボンディング工程３でのボンダビリティが低下すると
いう欠点があった。(Background of the Invention) Generally, as shown in FIG. 1, the bonding process includes a die bonding process 1 in which a die is bonded to a lead frame via an Ag paste, and then the Ag paste is dried in an oven. After drying step 2 is performed, wires are bonded to the lead plate and the die.
2. The lead frame mentioned above is generally made of 42 alloy material, but recently, in order to reduce the cost, cheap iron-filled copper and tin are being used as the lead frame. There is a tendency to use copper-containing materials.By the way, the steel material is easily oxidized when the temperature is raised.Therefore, conventionally, the wire bonding process 3 is performed in reducing air. While the drying step 2
Since drying is done in an oven, the lead plate is oxidized in drying process 2, and at the same time impurities contained in the Ag paste adhere to the lead frame, reducing bondability in the next wire bonding process 3. There were drawbacks.

特に銅メッキ、銅素材のリード７］−ムは、この傾向が
顕著に表われる。This tendency is particularly noticeable in copper-plated leads 7]-me made of copper material.

また銅素材で、ニッケルメッキ、銀メッキ、金メッキの
リードフ／−ムにおいても、メッキ工程での洗滌工程の
不足や、洗滌液の劣化等により、リードフレーム表面の
汚れがあると、ワイヤボンディング工程３でワイヤが付
かなくなったり、断お１〜／！ｌ−１１７ね、への不碧
数は０数係で僚小である力（−今後ますますワイヤ接続
数が多くなってくると、ＩＣ当りの不良率は数チに上が
り、問題となってくる。Also, when using lead frames made of copper and nickel-plated, silver-plated, or gold-plated, if the surface of the lead frame becomes dirty due to insufficient cleaning during the plating process or deterioration of the cleaning solution, it may occur during the wire bonding process. If the wire doesn't stick, then it's definitely 1~/! l-117, the number is 0 and the power is small (-As the number of wire connections increases in the future, the defective rate per IC will rise to several chips, which will become a problem. come.

（発明の目的） 本発明の目的は、銅を素材とするり−ド７ｖ−ムへのボ
ンダビリティを向上させることができる半導体の製造方
法を提供することにある。(Objective of the Invention) An object of the present invention is to provide a method for manufacturing a semiconductor that can improve bondability to a semiconductor made of copper.

（発明の実施例） 以下、本発明の一実施例を第２図により説明する。ダイ
ボンディング工程１でＡｇペーストを介してダイかボン
ディングされたリードフレームを、■２５〜２０チ、残
りＮ２よりなる不活性ガスの還元雰囲気炉中で１５０〜
３００℃の温度で２〜５分間放置して乾燥させる乾燥工
程１２を行う。これｌこより、リードフレームの微少酸
化膜や不純物が還元されるので、次のボンディング工程
３におけるワイヤの接着強度が向−ヒする。(Embodiment of the Invention) An embodiment of the present invention will be described below with reference to FIG. The lead frame to which the die was bonded via Ag paste in the die bonding step 1 was heated in a reducing atmosphere furnace with an inert gas consisting of 25 to 20 chips and the remainder N2.
A drying step 12 is performed in which the product is left to dry for 2 to 5 minutes at a temperature of 300°C. This reduces the minute oxide film and impurities on the lead frame, thereby improving the bonding strength of the wire in the next bonding step 3.

例えば、ワイヤボンディング工程３における接着率は、
還元雰囲気炉に２分放置した時は約８４チで、３分放亘
した時は９６Ｉに向上し、４分放置した時はほぼ１００
チに達した。For example, the adhesion rate in wire bonding step 3 is
When it was left in a reducing atmosphere furnace for 2 minutes, it was about 84I, and when it was left in a reducing atmosphere furnace for 3 minutes, it improved to 96I, and when it was left in a reducing atmosphere furnace for 4 minutes, it was almost 100I.
I reached chi.

なお、還元雰囲気炉はワイヤボンディングを施すワイヤ
ボンディング装置と別個に設けても、又はワイヤボンデ
ィング装置に一体に組込んでもよい。Note that the reducing atmosphere furnace may be provided separately from the wire bonding apparatus that performs wire bonding, or may be integrated into the wire bonding apparatus.

（発明の効果） 以上の説明から明らかな如く、本発明によれば、ペース
トを介してダイかボンディングされたリードフレームを
還元雰囲気炉で乾燥させ、その後ワイヤボンディングを
行うので、前記還元雰囲気炉での乾燥によって微少な酸
化や不純物による汚染等が完全ζこ還元され、ワイヤボ
ンディングの接着強度が著しく向上する。(Effects of the Invention) As is clear from the above description, according to the present invention, a lead frame to which a die is bonded through a paste is dried in a reducing atmosphere furnace, and then wire bonding is performed. By drying, minute oxidation and contamination caused by impurities are completely reduced, and the adhesive strength of wire bonding is significantly improved.

【図面の簡単な説明】[Brief explanation of the drawing]

図はボンディング工程を示し、第１図は従来例の説明図
、第２図は本発明の一実施例を示す説明図である。 １・・・ダ・ｆボンデイング工程、　１２・・・還元雰
囲気炉での乾燥工程、　３・・・ワイヤボンディング工
程。 第１図 ２ １　１２The figures show a bonding process, FIG. 1 is an explanatory diagram of a conventional example, and FIG. 2 is an explanatory diagram showing an embodiment of the present invention. 1... Da-f bonding process, 12... Drying process in a reducing atmosphere furnace, 3... Wire bonding process. Figure 1 2 1 12

Claims (1)

【特許請求の範囲】[Claims] ペーストを介してダイかボンディングされたリードフレ
ームを還元雰囲気炉で乾燥させ、その後ワイヤボンディ
ングを行うことを特徴とする半導体部品の製造方法。A method for manufacturing a semiconductor component, which comprises drying a lead frame die-bonded using a paste in a reducing atmosphere furnace, and then performing wire bonding.
JP58175107A 1983-09-20 1983-09-20 Semiconductor component manufacturing method Expired - Lifetime JPH0638433B2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58175107A JPH0638433B2 (en) 1983-09-20 1983-09-20 Semiconductor component manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58175107A JPH0638433B2 (en) 1983-09-20 1983-09-20 Semiconductor component manufacturing method

Publications (2)

Publication Number Publication Date
JPS6065541A true JPS6065541A (en) 1985-04-15
JPH0638433B2 JPH0638433B2 (en) 1994-05-18

Family

ID=15990379

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58175107A Expired - Lifetime JPH0638433B2 (en) 1983-09-20 1983-09-20 Semiconductor component manufacturing method

Country Status (1)

Country Link
JP (1) JPH0638433B2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116842A (en) * 1989-09-29 1991-05-17 Hitachi Ltd Bonding and device therefor

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742175U (en) * 1980-08-14 1982-03-08
JPS5754337A (en) * 1980-09-19 1982-03-31 Toshiba Corp Assembling apparatus for semiconductor device
JPS59229825A (en) * 1983-05-27 1984-12-24 Rohm Co Ltd Die bonding apparatus for semiconductor pellet

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5742175U (en) * 1980-08-14 1982-03-08
JPS5754337A (en) * 1980-09-19 1982-03-31 Toshiba Corp Assembling apparatus for semiconductor device
JPS59229825A (en) * 1983-05-27 1984-12-24 Rohm Co Ltd Die bonding apparatus for semiconductor pellet

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH03116842A (en) * 1989-09-29 1991-05-17 Hitachi Ltd Bonding and device therefor

Also Published As

Publication number Publication date
JPH0638433B2 (en) 1994-05-18

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