JPS6064394A - Semiconductor display unit - Google Patents

Abstract

(57) [Summary] This bulletin contains application data before electronic filing, so abstract data is not recorded.

Description

[Detailed description of the invention] The present invention relates to a semiconductor display device.

In recent years, semiconductor display devices in which a large number of display elements are arranged in a matrix and these display elements are selectively driven to display characters, figures, etc. have been widely put into practical use. This semiconductor display device includes driving transistors corresponding to each display element, and these transistors are also arranged in a matrix. The gate electrodes of these transistors are commonly connected to each horizontal column by a large number of X-side drive lines, while the source electrodes are commonly connected to each vertical column by a large number of X-side drive lines. and is connected. Drive signals are selectively applied to these X-side drive lines and X-side drive lines by an X-side driver and an X-side driver provided in correspondence with each other. will be displayed on the screen.

However, this semiconductor display device has problems in that the circuit scale is significantly large, resulting in poor yield and difficulty in reducing costs.

SUMMARY OF THE INVENTION Therefore, in view of the above-mentioned drawbacks of conventional semiconductor display devices, it is an object of the present invention to provide an improved semiconductor display device that can significantly improve yield.

A feature of the present invention is that in a semiconductor display device equipped with an X-side driver and an X-side driver that selectively drive an X-side drive line and a Y-side drive cliff, a plurality of sets of X-side drivers and X-side drivers are provided, and The driver on each side is divided into two or more parts in the same manner, and each divided part can be used to construct one complete driver on each side.

According to such a configuration, even if a part of one driver has a defect, the part containing the defect can be replaced with a corresponding part of a separately provided driver, thereby significantly increasing the yield. This can greatly contribute to cost reduction.

Hereinafter, the present invention will be explained in detail with reference to illustrated embodiments.

Part 1 (8) shows a configuration diagram of an embodiment of a semiconductor display device according to the present invention. This semiconductor display device 1 has
It consists of a display section 2, an xlllI drive section 3, and an X-side drive section 4. In order to drive display elements (not shown), the display section 2 includes a large number of driving transistors Tm formed in a matrix shape on a semiconductor substrate 5, and a plurality of driving transistors Tm arranged in a predetermined manner so as to be aligned with the array of these transistors. Gate electrode drive lines x1 to Xn arranged in parallel with the problem of
Source electrode drive lines Y1 to Yn are formed in the same manner in a direction perpendicular to these gate electrode drive lines X1 to Xn. Each gate electrode set 11m1 Xi to Xn is commonly connected to the gate of the transistor provided correspondingly, while each source electrode drive line Y1 to Yn is
It is commonly connected to the source electrodes of correspondingly provided transistors.

An X-side drive section 3 is formed on the substrate 5 for the purpose of selectively applying a predetermined drive signal to the gate electrode drive lines X1 to Xn. The three X-side drive sections are composed of two identical sets of X-side drive circuits 3a and 3b, and each drive circuit 3a and 3b is configured as a shift register. Therefore, each drive circuit 3a, 3b receives a series of bit-serial drive data inputted from the input terminal 6, and based on this n-bit drive data, each gate electrode drive line X1 to In
The potential of is determined according to this data.

- 10,000 drive circuits 3a can be divided into three parts indicated by symbols 3a+, 3al, and 3as, and the other drive circuit 3b can also be divided into 3bl by the same division method as that of the drive circuit 3a. , 3k)! , 5bB.

This X-side drive section 311-j: As described later, each of these parts can be arbitrarily combined to form one complete X-side drive circuit, and this switching control is performed by the first control circuit 7.

FIG. 2 shows a detailed circuit diagram of the first control circuit 7 and the X-side drive section 3. Each part 3a+, 3az, 341, 3b' which constitutes each drive circuit 3a, 3b! , 5b2.
3bl has corresponding parts connected in parallel as shown in the figure, and the enable signal E from the shift register supplied to each of these parts is sent to the switching circuits 71, 72, . . . 72 in the control circuit 7.
73 is applied. The switching circuit 71 is connected to either each part 3a+ or 3bl, the switching circuit 72 is connected to each part 3a+ or 3bz, and the switching circuit 73 is connected to each part 3as.
or 3bx, and by applying either an H or L level signal to each terminal 71a, 5-72a, 73a, only the desired circuit part can be operated. can.

The switching circuit 71 consists of AND gates 71b, 71c, and an inverter 71a, and when a voltage of rHJ level is applied to the terminal 71a, the AND gate 71b is opened, and only 3BL of the portions 3A+ and 3BL are operated. . On the other hand, when a voltage of rLJ level is applied to terminal 7a,
Only part 3a+ will be activated.

The other switching circuits 72 and 73 have similar configurations, and operate in a similar manner to activate one of the circuit portions connected in parallel.

Therefore, for example, if it is found that the circuit portions 5a+, 3bz are defective, a pair of X side drives that operate normally by any combination of the circuit portions 3bt, 3at, 3ai or the circuit portions 3bl, 3a2.31. A circuit can be constructed. Therefore, even if a defect occurs in the wafer, this defect can be repaired as described above, and the yield of the device can substantially be significantly increased.

6- In FIG. 2, only the X side has been described, but the Y side has exactly the same configuration, and the control circuit 8 can perform similar switching control.

In the illustrated embodiment, two sets of drive circuits are provided on each side, but any number of drive circuits greater than or equal to two may be provided on each side. The number of divisions is not limited to three, but may be any number of minutes as long as it is two or more.

According to the present invention, as described above, the yield is substantially improved and the manufacturing cost can be expected to be drastically reduced.

[Brief explanation of drawings]

FIG. 1 is a plan view showing an embodiment of the semiconductor display device of the present invention, and FIG. 2 is a circuit diagram showing the configuration of the X-side drive section and control circuit shown in FIG. 1. 1...Semiconductor display device 2...Display section 3...X side drive section 3a, 3b...X
Side drive circuit 4...X side drive section 4a, 4b...
...Y-side drive circuit 5...Semiconductor substrate 7.
8... Control circuits X1 to Xn... Gate electrode drive lines Y1 to Yn... Source electrode drive lines. Applicant Daini Seikosha Co., Ltd. Agent Patent attorney amount

Claims (1)

[Claims] In a semiconductor display device equipped with an X-side driver and an X-side driver that selectively drive an X-side drive line, a plurality of sets of X-side drivers and an 1. A semiconductor display device characterized in that it is divided into two or more parts according to the aspect, and each divided part is used to construct one complete driver on each side.