JPS6063918A - 分子線源用セル - Google Patents

分子線源用セル

Info

Publication number
JPS6063918A
JPS6063918A JP58172799A JP17279983A JPS6063918A JP S6063918 A JPS6063918 A JP S6063918A JP 58172799 A JP58172799 A JP 58172799A JP 17279983 A JP17279983 A JP 17279983A JP S6063918 A JPS6063918 A JP S6063918A
Authority
JP
Japan
Prior art keywords
cell
molecular beam
source material
cell body
beam source
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP58172799A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0136977B2 (Direct
Inventor
Shunichi Murakami
俊一 村上
Tetsuo Ishida
哲夫 石田
Sumio Sakai
酒井　純朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Canon Anelva Corp
Original Assignee
Canon Anelva Corp
Anelva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corp, Anelva Corp filed Critical Canon Anelva Corp
Priority to JP58172799A priority Critical patent/JPS6063918A/ja
Publication of JPS6063918A publication Critical patent/JPS6063918A/ja
Publication of JPH0136977B2 publication Critical patent/JPH0136977B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H10P14/3416—
    • H10P14/22—

Landscapes

  • Crystals, And After-Treatments Of Crystals (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP58172799A 1983-09-17 1983-09-17 分子線源用セル Granted JPS6063918A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP58172799A JPS6063918A (ja) 1983-09-17 1983-09-17 分子線源用セル

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP58172799A JPS6063918A (ja) 1983-09-17 1983-09-17 分子線源用セル

Publications (2)

Publication Number Publication Date
JPS6063918A true JPS6063918A (ja) 1985-04-12
JPH0136977B2 JPH0136977B2 (Direct) 1989-08-03

Family

ID=15948578

Family Applications (1)

Application Number Title Priority Date Filing Date
JP58172799A Granted JPS6063918A (ja) 1983-09-17 1983-09-17 分子線源用セル

Country Status (1)

Country Link
JP (1) JPS6063918A (Direct)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009040615A (ja) * 2007-08-06 2009-02-26 Choshu Industry Co Ltd 分子線源セル

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752565U (Direct) * 1980-09-12 1982-03-26
JPS5795233U (Direct) * 1980-12-01 1982-06-11
JPS6018540A (ja) * 1983-06-20 1985-01-30 イ−ストマン・コダツク・カンパニ− ポリカ−ボネ−トラテツクス組成物
JPS6027118A (ja) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp 分子線膜成長装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5752565U (Direct) * 1980-09-12 1982-03-26
JPS5795233U (Direct) * 1980-12-01 1982-06-11
JPS6018540A (ja) * 1983-06-20 1985-01-30 イ−ストマン・コダツク・カンパニ− ポリカ−ボネ−トラテツクス組成物
JPS6027118A (ja) * 1983-07-25 1985-02-12 Mitsubishi Electric Corp 分子線膜成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009040615A (ja) * 2007-08-06 2009-02-26 Choshu Industry Co Ltd 分子線源セル

Also Published As

Publication number Publication date
JPH0136977B2 (Direct) 1989-08-03

Similar Documents

Publication Publication Date Title
US5932294A (en) MBE deposition method employing effusion cell having a unibody crucible
US4075055A (en) Method and apparatus for forming an elongated silicon crystalline body using a <110>{211}orientated seed crystal
JP4175665B2 (ja) 単一坩堝とかかる坩堝を利用した流出（エフュージョン）源
US7371281B2 (en) Silicon carbide single crystal and method and apparatus for producing the same
US6451112B1 (en) Method and apparatus for fabricating high quality single crystal
US4646680A (en) Crucible for use in molecular beam epitaxial processing
US4116641A (en) Apparatus for pulling crystal ribbons from a truncated wedge shaped die
US3701636A (en) Crystal growing apparatus
JPS6063918A (ja) 分子線源用セル
US5415125A (en) Method of forming a semiconductor boule
US3360405A (en) Apparatus and method of producing semiconductor rods by pulling the same from a melt
US20240052520A1 (en) System and method of producing monocrystalline layers on a substrate
US4239734A (en) Method and apparatus for forming silicon crystalline bodies
US4304623A (en) Method for forming silicon crystalline bodies
JPH0232781B2 (Direct)
JP2833164B2 (ja) ダイヤモンド膜の製造装置および製造方法
JP3788156B2 (ja) 化合物半導体単結晶の製造方法およびそれに用いられるｐｂｎ製容器
JP2546746Y2 (ja) 垂直ブリッジマン法用るつぼ
JPS63307190A (ja) 液面調節機構付分子線源
JPH0380180A (ja) 単結晶製造装置
JP2773339B2 (ja) 液相エピタキシャル成長方法
JPS62190719A (ja) 分子線エピタキシヤル成長装置
JPS5945994A (ja) 分子線エピタキシヤル成長用るつぼ
JPS63282189A (ja) 分子線エピタキシャル成長装置
JPH0614479Y2 (ja) 炭化ケイ素単結晶の液相エピタキシヤル成長装置