JPS6060654A - Photoconductive member - Google Patents

Abstract

PURPOSE:To obtain a photoconductive member which has high sensitivity particularly with long wavelength light and has excellent durability, etc. by forming a photoreceptive layer consisting of three layer regions which consist of an amorphous material contg. Si and Ge and in which C is distributed at different concentration in the layer thickness direction. CONSTITUTION:A photoreceptive layer 102 contg. Si and Ge having the concentration distribution large in the thickness direction of the base side or uniform over the entire layer is formed on a conductive base 101 in order of three layer regions 103, 106, 105 having different contents of C in the layers by making the respective concn. of C as C1, C3, C2. The region 106 is so formed that the concn. C3 thereof alone does not attain the max. concentration and that if either one of C1-C3 is zero the other two are not zero and are not equal. H or halogen is further incorporated into the layer 102. The regions 104, 105 prevent the charge injection from an outside surface 103 and the base side and the region 106 improves the transport efficiency of the generated photocarrier. The photoconductive characteristic is thus stabilized and the excellent image is obtd.

Description

Detailed Description of the Invention The present invention relates to a photoconductive member that is sensitive to electromagnetic waves such as light (herein, light in a broad sense refers to ultraviolet rays, visible rays, infrared rays, X-rays, gamma rays, etc.). As a photoconductive material for forming a photoconductive layer in a solid-state imaging device, an electrophotographic image forming member in the image forming field, or a document reading device, it has high sensitivity and a high signal-to-noise ratio [photocurrent (Ip)].
/ dark current (Kon)], has absorption spectrum characteristics that match the spectrum characteristics of the electromagnetic waves to be irradiated, has fast photoresponsiveness, has the desired dark resistance value, and is non-polluting to the human body during use. In addition, solid-state imaging devices are required to have characteristics such as being able to easily process afterimages within a predetermined time. Particularly in the case of an electrophotographic image forming member incorporated into an electrophotographic apparatus used in an office as a business machine, the above-mentioned non-polluting property during use is an important point.

Based on this point, amorphous silicon (hereinafter referred to as a-8i) is a photoconductive material that has recently attracted attention.
No. 55718 describes its application as an electrophotographic image forming member, and DE 2933411 describes its application to a photoelectric conversion/reading device.

A photoconductive member having a conventional photoconductive layer composed of A-8T has excellent electrical, optical, and photoconductive properties such as dark resistance, photosensitivity, and photoresponsivity, and moisture resistance. The reality is that there are points that can be further improved in terms of usage environment characteristics and furthermore, stability over time, which requires comprehensive improvement of characteristics.

For example, when applying it to an electrophotographic image forming member, when trying to achieve high photosensitivity and high dark resistance at the same time, in the past, it was often observed that residual potential remained during use, and this persimmon light When a conductive member is used repeatedly for a long period of time, fatigue accumulates due to repeated use, resulting in the so-called ghost phenomenon that causes afterimages, or when used repeatedly at high speeds, the response gradually decreases to -F. No'
In many cases, points on the order of 41'I occurred.

Historically, a-Si has a relatively smaller absorption coefficient in the long wavelength region than in the short wavelength region of the visible light region, making it difficult to match with semiconductor lasers currently in practical use. When using commonly used halogen lamps and fluorescent lamps as light sources, there remains room for improvement in that they do not effectively use light on the longer wavelength side.

In addition, if the irradiated source is in a light 2#-electronic table and the amount of light reaching the support increases without being absorbed sufficiently, the support itself will transmit the photoconductive J◎. If the reflectance of the incoming light is -, interference due to multiple reflections occurs within the photoconductive layer, which is one of the causes of "blurring" of the image.

This effect becomes larger as the irradiation spot is made smaller in order to increase the resolution, and becomes a major problem especially when a half-49 body laser is used as a light source.

Furthermore, when forming a photoconductive layer using an a-8il material, in order to improve its electrical and photoconductive properties, hydrogen atoms, halogen atoms such as fluorine atoms and chlorine atoms, and electrically conductive type Boron atoms, phosphorus atoms, etc. are included for control purposes, and other atoms are included as constituent atoms in the photoconductive layer for the purpose of improving other properties, but depending on how these constituent atoms are contained, However, problems may arise in the electrical or photoconductive properties of the formed layer.

That is, for example, the lifetime of photocarriers generated by light irradiation in the formed photoconductive layer may not be sufficient, or the injection of charge from the support side may not be sufficiently prevented in dark areas. There are many cases.

Historically, when the layer thickness exceeds 10-odd microns, the layer lifts or peels off from the surface of the support as time passes after it is left in the air after being removed from the vacuum deposition chamber for layer formation. This caused problems such as cracks in the layer. This phenomenon often occurs particularly when the support is a drum-shaped support commonly used in the field of electrophotography, and there are points that need to be solved in terms of stability over time.

Therefore, while efforts are being made to improve the properties of the a-Si material itself, some members are trying to solve all of the above-mentioned problems when designing photoconductive members.

The present invention has been made in view of the above points, and a-S
As a result of intensive research and study on the i from the viewpoint of its applicability as a photoconductive part used in image forming parts for electrophotography, solid-state imaging device 1 reader, etc.,
An amorphous material having a silicon atom (Si) and a germanium atom (Ge) as a matrix and containing at least either a hydrogen atom (H,) or a halogen atom (X),
Wr ifl'l Water It amorphous silicon germanium halogenated amorphous silicon germanium, or halogen-containing hydrogenated amorphous silicon germanium [hereinafter referred to as the generic notation [a-8i]
The structure of a photoconductive layer having a photoreceptive layer exhibiting photoconductivity composed of Ge(H, The photoconductive material not only exhibits extremely excellent properties in practical use, but also surpasses conventional photoconductive materials in all respects, and is particularly useful as a photoconductive material for 1π-ion photography. This is based on the discovery that it has excellent properties and absorption spectrum characteristics on the long wavelength side.

The present invention has always stable electrical, optical, and photovoltaic characteristics.
It is an all-environment type with almost no restrictions on the usage environment, has excellent photosensitivity characteristics on the long wavelength side, and is extremely resistant to light fatigue, does not cause any deterioration phenomenon even after repeated use, and has no residual rfT or position. An object of the present invention is to provide a photoconductive member in which no or almost no oxidation is observed.

Another object of the present invention is to provide a photoconductive member that has high photosensitivity in the entire i'jj optical range, has excellent compatibility with semiconductor lasers, and has fast photoresponse.

Another object of the present invention is to have excellent adhesion between a layer provided on a support and the support and between each layer of laminated layers,
It is an object of the present invention to provide a photoconductive member that is dense and stable in terms of structural arrangement and has high layer quality.

Another object of the present invention is to maintain charge retention during charging processing for electrostatic image formation to such an extent that ordinary electrophotography can be applied very effectively when applied as an image forming member for electrophotography. It is an object of the present invention to provide a photoconductive member having excellent electrophotographic properties with sufficient performance and with almost no deterioration of the properties observed even in a humid atmosphere.

Still another object of the present invention is to provide a photoconductive member for electrophotography which can easily obtain high-quality images with high density and clear no-feet tones, without affecting the resolution. be.

Yet another object of the present invention is high BuC sensitivity.

It is also an object to provide a photoconductive member having high 8N ratio properties and good electrical contact with the support.

The photoconductive member of the present invention has a support for an optically exclusive member, a photoreceptive layer showing photoconductivity and made of an amorphous material containing silicon atoms and germanium atoms, and the photoconductive member has a photoconductivity. The receptor layer contains carbon atoms, and the distribution concentration in the layer thickness is C(1).

C(31, C(2+ first layer region, third layer region,
It is characterized by having second layer regions in this order from the support side (however, C(3) alone does not reach the maximum, and any one of C(ll, (121, C(31)
If one becomes 0, the other two are not 0 and are not equal).

The photoconductive member of the present invention, which is provided with the above-mentioned layer structure, solves all of the above-mentioned problems and has extremely excellent electrical and optical properties.

Shows the light guide weight t1\ characteristics, electrical pressure resistance, and usage environment characteristics.

In particular, when it is applied as an electrophotographic image forming method, there is no influence of residual potential on the formation of two-dimensional images. Those with a high N ratio have good optical fatigue resistance, long repeated use characteristics, and a high concentration. images can be obtained stably and repeatedly.

In the optical transfer of the present invention, one photoreceptor formed on a support has a strong layer itself, and has excellent adhesion to the support, so it can be transferred continuously at high speed for a long time. Can be used repeatedly.

Further, the photoconductive member of the present invention has high photosensitivity in the entire visible light range, is particularly excellent in matching with semiconductor lasers, and has fast photoresponse.

Hereinafter, the electrically conductive member of the present invention will be explained in detail with reference to the drawings.

FIG. 1 is a schematic configuration diagram schematically shown to explain the layer configuration of a photoconductive member according to a first embodiment of the present invention.

A photoconductive member 100 shown in FIG. 1 has a photoreceptive layer 10 made of a-8iGe (H,
2.

The germanium atoms contained in the light-receiving layer 102 may be contained so as to be evenly distributed in the light-receiving layer 102, or may be contained evenly in the layer Jl (the germanium atoms are evenly distributed in the + direction). However, in any case, in the in-plane direction parallel to the surface of the support, the content should be uniform and evenly distributed. This is also necessary from the point of view of making the characteristics uniform in the inward direction.

In particular, it is contained without fail in the layer thickness direction of the light-receiving layer 102, and on the side opposite to the side where the support 101 is provided (the free surface 103 side of the light-receiving layer 102). 1111 (light-receiving layer 102
It is contained in the light-receiving layer 102 in such a way that it is distributed in a larger amount on the side of the interface between the substrate 101 and the support 101, or vice versa.

In the photoconductive separation of the present invention, as described above) Y:
The distribution state of germanium atoms contained in the receptor layer is
In the layer thickness direction, the distribution state is as described above, and in the in-plane direction parallel to the surface of the support, there is a uniform distribution state.
It is desirable to

A photoreceptive layer 10 of a photoconductive part shrine 100 with 7Je shown in FIG.
2 is a layer region (11I) in which carbon atoms are contained and the distribution concentration U Cfcl in the layer thickness direction is C(11). The third layer region (3) has a value of region (21105, C(3)
1106.

In the present invention, the above-mentioned 1. Second. Each third layer region does not necessarily need to contain carbon atoms in any of the three layer regions, but any one of the three layer regions does not necessarily have to contain carbon atoms.
If one layer region does not contain carbon atoms, the other two layer regions must contain carbon atoms, and the distribution of carbon atoms in those layer regions in the layer thickness direction. Concentration C (C1 must be different. Clogging, distribution concentration C (1), C (21, CC31 must be 0)
In this case, it is necessary to form each layer region so that the other two are not 0 and are not equal. By doing so, it is possible to effectively prevent charges from being injected into the photoreceptive layer 102 from the free surface 103 side or the support 101 side when subjected to charging treatment, and at the same time, it is possible to It is possible to improve the dark resistance of the layer 102 itself and the adhesion between the support 101 and the light-receiving layer 102.

The photoreceptive layer 102 has practically sufficient photosensitivity and dark resistance, can sufficiently prevent charge injection into the photoreceptor layer 102, and can suppress photocarriers generated in the photoreceptor layer 102. In order to ensure that transportation is carried out effectively, the third
It is necessary to set the photoreceptive layer 102 so that the distribution concentration of carbon atoms in the layer region C (31li) does not reach the maximum value alone. In this case, preferably, the layer thickness of the third layer region is smaller than that of the other It is desirable to design the photoreceptive layer 102 so that it is sufficiently thicker than the layer thickness of the two layer regions, and more preferably, the layer thickness of the third layer region is one-fifth of the layer thickness of the photoreceptor layer 102. It is desirable to generalize the photoreceptive layer 102 so that it occupies the above amount.

In the present invention, the layer thickness of the first layer region (1) and the second layer region (2) is preferably 0.003 to 30μ.
, more preferably 0.004 to 20 μ, optimally 0.00
It is desirable that the thickness be 5 to 10μ.

Further, the layer thickness of the layer region (3) of εFG 3 is preferably 1 to 100 μm, more preferably 1 to 80 μm, and most preferably 2 to 50 μm.

The photoreceptive layer is designed so that the first layer region (11) and the second layer region (2) mainly function as a so-called charge injection blocking layer that prevents charge injection into the photoreceptive layer. In this case, it is desirable that the layer thicknesses of the first layer region (1) and the second layer region (2) are each a maximum of lOμ.

When cutting the photoreceptive layer so that the third layer region (3) mainly functions as a charge generation layer, the third layer region (3)
The layer thickness of 3) is determined as desired depending on the light absorption coefficient of the light source used. In this case, if a light source normally used in the electrophotographic field is used,
The layer thickness of the third layer region (3) may be approximately 10 μm at most.

In order for the third layer region (3) to primarily have a 4!1 function as a charge transport layer, it is desirable that the layer thickness be at least 5 μm.

In the present invention, the carbon atom content distribution concentration C(1),
The maximum value of C(21 and C(3)) is the sum of silicon atoms, germanium atoms, and carbon atoms (hereinafter 1-
T (8iGeC) J) is preferably 6
7 atomic%, more preferably (ri 50 a
It is desirable that the atomic ratio is optimally set to 40 atomic%. Moreover, the distribution concentration C(1), C(
21, C (31 The minimum value when there are no Of is T (
SiGeC) preferably 1 atomic p
pm, more feminine 50 atonic ppm
, optimally 100 atomic ppm.

2 to 10 show typical examples in which the distribution state of germanium atoms contained in the photoreceptive layer in the layer thickness direction is non-uniform.

2 to 10, the horizontal axis shows the distribution concentration C of germanium atoms, the vertical axis q111 shows the layer thickness of the photoreceptive layer showing the photoconductive layer, and tB shows the surface of the layer of the support I11]. tT indicates the position of the surface of the photoreceptive layer opposite to the support side. That is, the photoreceptive layer containing germanium atoms is formed from the tB side toward the tT side.

A first typical example of the distribution state of germanium atoms contained in the photoreceptive layer in the layer thickness direction is shown in the second south.

In the example shown in FIG. 2, 1. Up to the position tf, germanium atoms are contained in the formed photoreceptive layer while the distribution concentration C of germanium atoms takes a constant value C1.
From ffit1, the distribution concentration C2 up to the interface position tT
It has been gradually and continuously reduced. At the interface position 1T, the distribution concentration C of germanium atoms is C8.

In the example shown in FIG. 3, the distribution concentration C of the contained germanium atoms gradually and continuously extends from the concentration C6 from the position in tB to the position #tT, and then reaches the concentration C5 at the position ftT. It forms a distribution state.

In the case of FIG. 4, the distribution concentration C of germanium atoms is kept constant at the concentration C6 from position t8 to position t2, and gradually and continuously decreases between position t2 and position tT. , r, the distribution concentration C is substantially zero (substantially zero here means less than the detection limit amount).

In the case of FIG. 5, the distribution concentration of germanium atoms If C
From the position tII to the position tT, the concentration is gradually decreased from the concentration C3, and becomes substantially zero at the position tT.

In the example shown in FIG. 6, the distribution concentration C of germanium atoms is C9 between the position trl and the position t3.
is a constant value, and the concentration is C7° at position tT. Between the position t3 and the position tT, the distribution density C is linearly decreased until it reaches the position t and then reaches the position tT.

In the example shown in FIG. 7, the distribution concentration C is at the position tB.
The concentration CIJ takes a constant value up to position t4.
From 4 to position tT, from concentration CI2 to concentration C1, -
A distribution pattern that decreases in number! It is said to be the original.

In the example shown in FIG. 8, 1? °(1
Up to T, the germanium atom distribution g>degrees C decreases in a sub-order function from the concentration C04 to substantially zero.

In FIG. 9, the distribution concentration C of germanium atoms from the position ff1ttn to the position t5 is the concentration cog
An example is shown in which the density is linearly reduced to CI6, and between positions t and t, the density is set to one brim value of CI6.

trr In the example shown in Fig. 10, the distribution concentration C of germanium atoms is the concentration CI7 at the position tB, and it decreases slowly from this concentration CI7 until reaching the position t6, and then suddenly decreases near the position t6. Mt is reduced to a concentration CI8 at a position t6.

(i'Li1ji': Between ja and position t, the concentration is rapidly decreased at first, and then slowly and gradually decreased until the concentration CI0 is reached at °C position L7, and between position t7 and position t.

is gradually decreased very slowly to the position t
, the odor reaches a concentration C7o. Position t, point 1ift
Between 7 and 7, C2o for J is reduced to substantially zero according to a curve shaped as shown in the figure.

In FIG. 9, the distribution of germanium atoms from position tB to position t is 3 degrees C, which means lff! Degree C15
The density decreases linearly to 0.6 from i[, position 1.
An example is shown in which the IHL of the position LT is set to a constant value of # degree C16.

In the example shown in FIG. 10, the distribution concentration C of germanium atoms is at the position tBVc and degree CI7,
These 11 degrees until reaching position t6 (hi, L at the beginning from 7)
9) It is gradually decreased, and at position t6, when it is near +J, it is rapidly decreased, and at position 16, the concentration is set to CI8.

Between position t6 and position t7, VC is first rapidly decreased, and then warmly and gradually decreased to position t,
1m W C+o, position t7 and position ij' tg
is gradually decreased very slowly to the position t
8, the concentration C20 is reached. Between position ht8 and position tT, the concentration is reduced by .degree. C. according to a curve vFl shaped as shown in the figure so that the concentration becomes substantially zero.

As described above, according to Fig. 2 and Fig. 10, the light-receiving layer contains
As described above, some typical examples of the distribution state of germanium atoms in the layer thickness direction are explained, in the present invention, there is a part with a high distribution concentration C of germanium atoms on one support side, and the interface t1. (For li, j, if the photoreceptive layer is provided with a distribution state of germanium atoms having a portion where the distribution concentration C is lower than that on the support side, this is cited as one of the preferable examples. You can get rid of it.

Light guide 1πpl in the present invention! Preferably, the photoreceptive layer constituting the material contains germanium atoms at a relatively high concentration on the side of the support tM body or, conversely, on the side of the free G plane, as described above. The localized area (N is preferably 41), for example, the localized area (N is shown in FIGS. 2 to 10).
It is desirable that tl, which will be explained using the symbol -', be provided within 5 μm from the interface position tB.

The above localized region (N may be the entire J・S region (LT) up to 5μ thick from the interface position*?tn, or may be a part of the layer region (LT) .

Whether the localized region (A) is to be a part or all of the layer region (LT) is determined as appropriate according to the characteristics required for the photoreceptive layer to be formed.

In the localized region (A), the distribution state of the germanium atoms contained therein in the layer thickness direction is the same, and the maximum value Cmax of the distribution degree of germanium atoms is silicon 1. (For the sum with + child, the emissive is 1000 atomic 1lllfi
Above, more preferably N 5000 atomic 1%
As mentioned above, it is desirable to form a layer in such a way that it can be divided into 1j forms such that the iV mN is I x 10' atomic or more.

That is, in the present invention, the content of germanium atoms i
The light-receiving layer has a layer thickness of 5μ or less (from support color 11).
The maximum value Cma of the distribution concentration in the layer top region of 5μ thickness from tl3
It is preferable that x be present.

In the present invention, the content of germanium atoms contained in the photoreceptive layer is appropriately determined according to the requirements of 7Jr so as to effectively achieve the purpose of the present invention, but the content of germanium atoms contained in the photoreceptive layer is , preferably 1-9.5X1♂aj
omlc pInS more preferably 100 to 8 x 10-
1OmiCp10-1O optimally 500-7xlOa
It is desirable that it be a tomic screen.

Distribution of germanium atoms in the photoreceptive layer
, germanium atoms in all frII atoms? The distribution of germanium atoms in the outward direction of the layer, C, is from '6J to the free surface of the light absorbing layer, with a slight change from hk to I't. When this inverse improvement is given, the required cow 1 property can be obtained by arbitrarily changing the rate of change set of the molecule J4':C as desired. It is possible to realize a photoreceptive layer with 84 different types.

For example, distribution of germanium in d1 photoreceptor aay
At support I4-x, make it sufficiently high, and on the free surface side of the photoreceptive layer, make it as low as possible.Force distribution 1&J
The change in degree C is given to the distribution concentration curve of urmanium atoms by λ
Z) By doing so, it is possible to achieve high optical efficiency for light in the entire ￥-1 range from relatively short wavelengths to relatively long wavelengths, including the visible light region, and also to use laser light, etc. LB will come to talk about the effectiveness of preventing interference with interference light.

Furthermore, as will be described later, by extremely increasing the distribution concentration C of germanium atoms at the end of the photoreceptive layer on the side of the support, the photoreceptive layer can be improved when a semiconductor laser is used. The light on the long wavelength side that cannot be fully absorbed in the laser irradiation drrμs1r is supported by the photoreceptive layer f41flail.
In the end layer area Jfi, 4, the suction 117 is substantially completely
Therefore, interference due to reflection from the surface of support I'1 can be effectively reduced by 1υJJ.

In the 117th part i14 of the misfired 19th light, ρ1 light sensitivity and Takaaki resistance, history? J. Between the support and the photoreceptive layer σ) For the purpose of improving the lip and eyebrow properties, 1 dl of carbon is added to the photoreceptor layer. To light? The carbon atoms contained in the photoreceptive layer may be included in the entire Jt:i region of the photoreceptive layer by satisfying the conditions in the RSU, or they may be included in the photoreceptive layer. It may be contained only in some layer buttons; 17I9 and may be distributed ubiquitously.

In the present invention, the distribution state of carbon atoms is as follows for photoreception:
As a whole, there is no uniformity in the layer thickness direction in the scale marked n. Second. In each third layer region, l'7
It is uniform in the 71g direction.

Figure 11 haki Figure 15 it, first reception? A typical example of the distribution of carbon atoms throughout one layer is shown. It should be noted that symbols used throughout the explanation of these figures have the same meanings as used in FIGS. 2 to 10.

In the example shown in No. 111b, the position t is lower than the position tB.

The distribution concentration C (q) of carbon atoms is assumed to be a constant value of C21, and the distribution concentration C (q) of carbon atoms is assumed to be a constant value of C21 from the positions at, to and 1.tTt.

In the example shown in FIG. 12, position 110 from blood tB at tj1.
-, the carbon atom distribution concentration C (shi) is taken as a one-step value with Czs, and from the position too to the time W jH, the carbon atom distribution layer jELC ((-) is 024, and from the position tII to the position tT'!L Then, the degree C (c') of the carbon atom is Cu
In addition, in three steps, the carbon j atom's fraction I side C (Q) is decreased.

In the example of FIG. 13, the carbon atom distribution layer ff1c (C?) at position tszt from position 1υtB is C26, and position til
The distribution concentration C of carbon atoms from tt+2 to position tT (q is assumed to be C27).

For example, from position tB to position tea, the distribution concentration of carbon atoms C (q is C211, from position 1tn to position 't, 4) is the distribution layer of carbon atoms &C (Q is Cxo, The distribution concentration of carbon atoms C(
Q is lower than C. In this way, the distribution concentration C (c'l) of carbon atoms is increased in three stages.

In the example in Fig. 15, the distribution of carbon atoms from position tB to position f45 is ea'C (QfdC3+tL position vt3.kara position 1'rFt, and the distribution concentration of carbon atoms up to 6 is C(ql is C32 and L, position From tl11 to position 7tT, the distribution concentration of carbon atoms C(C) is C33.The distribution concentration of carbon atoms C(((
,, should be high.

In the IC of the present invention, the photoreceptor 1', j'7 contains a sulfur atom that is extinguished by d.], and the layer 9'J71''2
(C) (formed by at least two layer regions of the above-mentioned first, second and third layer regions), light axis, degree and dark resistance b
1. When the main purpose is to improve
! : The main purpose is to strengthen the adhesion between the support layer and the photoreceptive layer [in the case of N, the photoreceptor 1
The support c4 (@) is provided so as to occupy the territory of the end layer.

In the first case above, the content of carbon atoms contained in the layer region 1 (q) is made relatively low to maintain high photosensitivity, and in the second case the charge from the free surface of the photoreceptor layer is In the third case, it is preferable to use a relatively large amount to prevent the injection of VC, and in the third case, to ensure VC to strengthen the adhesion to the support.

In addition, for the purpose of achieving the above-mentioned Tamana at the same time, support 14
- A relatively high concentration of carbon atoms is distributed in the photoreceptor layer, a relatively low concentration is distributed in the center of the photoreceptive layer, and more carbon atoms are distributed in the surface layer region on the free surface side of the photoreceptor layer. It is difficult for the distribution of carbon atoms to form in the layer region (Q).

In the main decision J, the content of nitrogen atoms in the region IQ, which is n〆V in the photoreceptive layer, is the layer region (
The characteristics required for the Q itself, or the characteristics in the layer area (the area of contact with the support in the case where the Q is placed in direct contact with the support), etc. Appropriate choices can be made depending on the relationship.

In addition, if another layer region is provided in direct contact with the recording layer 111 (1°C), the characteristics of the other layer region and the glue interface with the other layer region may be The relationship with properties is also taken into consideration, and the carbon atom content is selected as appropriate.

The amount of carbon atoms contained in the layer region (C) may be adjusted as desired depending on the properties required of the photoconductive member to be formed, or preferably 0.000 to T(SiGeC). 001-50 atomic%, more preferably 0.00; 9-40 atonlic%, optimally 0
．． It is desirable that the content be 0.003 to 30 atomic%.

In the present invention, if the layer area (() occupies the entire area of the photoreceptive layer, or even if the entire area of the photoreceptive layer is not aged, the layer area (()) of the photoreceptive layer with the layer thickness T. When the proportion of carbon atoms in the thickness T is sufficiently large, it is desirable that the upper limit t of the content of carbon atoms that can be contained in the layer region (X) is sufficiently smaller than the value of nIJ.

In the case of the present invention, when the layer area (Q) accounts for two-fifths or more of the layer thickness T of the photoreceptive layer, the layer area (Q) The upper limit of the number of carbon atoms contained is preferably 30 atomic% or less, more preferably 30 atomic% or less, based on 'I' (8iGeC).
20 atomic% or less, R suitable for 1 Oato+ni
It is desirable that the content be less than c%.

In the present invention, the layer region (U) containing carbon atoms constituting the photoreceptive layer contains carbon atoms at a relatively high concentration on the support side and near the free surface, as described above. It is preferable to use a ribbon having a localized region (H), and in the former case, it is possible to further improve the adhesion between the support and the photoreceptive layer and to improve the acceptance potential. I can even measure it.

The above-mentioned localized layer region (IJI, which is explained using an indicative symbol in FIGS. 11 to 15), is desirably provided within 5 μm from the free surface tT by the interface position ini.

In the present invention, the localized region (11) may be the entire layer region (Ll.) up to 5 μ thick from the interface position tB or free surface t.1. (LT)
Sometimes it is considered a part of.

Whether the localized region (B) is a part or all of the layer region (1) is determined according to the characteristics required of the photoreceptive layer to be formed. J region (Bo is the N contained in it, !Distribution concentration C of carbon atoms as the distribution state of P1η thickness direction of surface atoms
(C) maximum (icmax is preferably 500 atn
+nicppm or more, better a VCke800 ato
rniclqa or more, optimal Ni is 1000 atomic
It is desirable that the layer J be formed so that a distributed IG with a length of 91 m or more can be obtained.

That is, in the present invention, the layer region containing carbon atoms (Q is 5
It is desirable that a green color be formed within μυ (layer region 5μ thick from t13 or tT) where the maximum density Cmax of the distribution concentration C (C') is small.

In the present invention, the halogen atom (3) contained in the photophile is specifically fluorine,
Chlorine, bromine, and iodine are mentioned, and chlorine is particularly preferred.

In the photoconductive member of the present invention, the conductive properties of the photoreceptive layer can be controlled as desired by containing a substance (C'l) that controls the conductive properties in the photoreceptor layer. can be controlled.

Examples of such impurities include so-called impurities in the semiconductor field, and in the present invention, for a-8iGe (H, Examples include an n-type impurity that provides n-type conduction characteristics and an n-type impurity that provides n-type conduction characteristics. in particular,
As n-type impurities, atoms belonging to Group 1II of the periodic table (
m group atoms), for example B (boron) 2M (aluminum).

Ga (Gariu A) l in (I/dium), Tl
(thallium).

etc., and B and Ga are particularly preferred to be used once a month.

As n-type impurities, atoms belonging to Vc of Group V of the periodic table (
Group V atoms), such as P (phosphorus), As (rl), Sb
(antimony), Bi (bismuth), etc., and plAs is particularly preferably used.

In the present invention, the content of the substance (q) that controls the conduction properties contained in the photoreceptive layer depends on the conduction properties required for the photoreceptor layer, or the content of the substance that controls the conduction properties of the photoreceptor layer. It is possible to make a choice as to the relevance V of this machine, such as the relationship with compassion in the contact field r1iJ with the supporting body.

In addition, when the substance for controlling the conduction properties is incorporated locally in the layer region of the photoreceptive layer, it is particularly important to Support side end hL
The layer region (if it is included in the scent, the characteristics of other PrJ regions that lie in direct contact with the layer region), and the relationship with the characteristics that may harm the contact interface with the other layer region. being considered,
Conduction properties′? ! - The content k of the substance to be controlled is selected as appropriate.

In the present invention, the substance controlling the conduction properties of tbU contained in the original light receiving and receiving light receiving material (q) is preferably 0.01 to 5X 10 atomic ppm, more preferably Xi!11vc is 0 .5~lXl0 atomic
ppn, preferably 1 to 5XIO atomic ppm.

In the vclJA of the present invention, the substance (C) that controls the conduction properties
The substance (the content of Q in the layer region containing is preferably 30 atomic pp+n or more, more preferably 50 atomic pp or more, optimally 100 atomic pp+n)
In the case of cppn+ or higher, it is desirable to locally contain the substance (q) in some layer regions of the light-receiving layer, especially in the end layer region of the light-receiving layer on the side of the support (unevenly distributed in odor). It is desirable to do so.

Among the above, the support side end layer region of the photoreceptive layer
For example, by containing the substance (shi) that completely controls the conduction characteristics described in 01j so that the content is a navy blue with a value higher than the value indicated above, j (If (-') is the n-type impurity mentioned above, the free surface of the photoreceptor layer is completely polarized by the transfer of electrons injected from the support side into the photoreceptor layer. In addition, in the case where the substance to be impurities is an n-type impurity as shown in W, when the free surface of the photoreceptor is subjected to charging treatment to e#1. In addition, it is possible to effectively prevent the movement of holes injected from the support side into the photoreceptive layer.

In this way, the end layer region (or the remaining layer region of the photoreceptive layer, when the scent contains a substance that controls the conductivity of one polarity, i.e., 01) and the end layer region #k ( The layer region excluding 8 (4) may contain a substance that controls the conduction characteristics of the other polarity, or a material that controls the conduction characteristics of the same polarity may be added to the end layer region (4). It may be contained in a much smaller amount than the actual amount contained in the scent.

In such a case, the substance controlling the conductive properties ((,) contained in the layer region (4) may be It is determined as desired depending on the amount, but preferably 0.001-1000a tOm I CI'p
h O, 05-500 atomic
plKm+ Optimally 0.1 to 20 Oatomic concavity is desired In the present invention, when the end layer region (E) and the layer region (Z) contain the same kind of substance governing conductivity, is the content in the layer region (Z),
Preferably, it is desirably 30 atomic ppm or less. In addition to the above-mentioned cases, in the present invention, the photoreceptive layer contains a layer region containing a substance controlling conductivity having one polarity, and a substance controlling conductivity having the other polarity. It is also possible to provide a so-called depletion layer in the contact region by directly contacting a layer region containing .

For example, the layer region containing the n-type impurity and the layer region containing the n-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other to form a so-called p-n junction. , a depletion layer can be provided.0 In the present invention, the photoreceptive layer composed of a-8i Ge (H, This is accomplished by a vacuum deposition method that utilizes a discharge phenomenon. For example, to form a photoreceptive layer composed of a-8iGe(H,X) by a glow discharge method, silicon atoms (Si) can basically be supplied. A raw material gas for supplying 8i, a raw material gas for Ge supply that can supply germanium atoms (Ge), and a raw material gas for introducing hydrogen atoms (H) or/and a raw material for introducing halogen atoms (X) as necessary. gas,
A gas is introduced at a desired pressure into a deposition chamber, the interior of which can be reduced in pressure, to generate a glow discharge within the deposition chamber, and a-8i
A layer consisting of Ge (H,X) may be formed. Further, in order to contain germanium atoms in a non-uniform distribution state, a layer consisting of a -8i Ge (H,X) may be formed while controlling the distribution concentration of germanium atoms according to a desired rate of change curve. In addition, when forming by sputtering method, for example, a target made of Si, or a target made of Si and Ge in an atmosphere of an inert gas such as Ar or He, or a mixed gas based on these gases. Using two targets, Si and G
If desired, using a mixed target of e.
A raw material gas for supplying Ge diluted with a diluent gas such as He or Ar is introduced into a deposition chamber for sputtering with a gas for introducing hydrogen atoms (H) or/and halogen atoms (X) as necessary. , by creating a plasma atmosphere of the desired gas. In order to make the distribution of germanium atoms non-uniform, the target may be sputtered while controlling the gas flow rate of the raw material gas for supplying Ge according to a desired variation curve.

In the case of the ion blating method, for example, polycrystalline silicon or single crystal silicon and polycrystalline germanium or single crystal germanium are housed in a deposition boat as evaporation sources, and the evaporation sources are heated using a resistance heating method or an electron beam. It can be carried out in the same manner as in the sputtering method, except that it is heated and evaporated by a method such as the IflB method, and the flying evaporated material is passed through a desired gas plasma atmosphere.

Substances that can be used as the raw material gas for supplying St used in the present invention include 5il-(,, Si, H6,8il
Silicon hydride (silanes) in a gaseous state or that can be gasified, such as 1I (8゜5i4H,o), can be used effectively, especially for ease of handling during layer creation work and Si supply efficiency. Preferred examples include SiH4, Si, and 116 in terms of good properties.

As a material that can be a source gas for supplying Ge, GeH
,,Ge,H6,Ge,H8,Ge4H,. , Ge,
H,,,Ge6H,,,Ge,H,,.

Ge, hLs l GCOH2°, and other gaseous or gasifiable germanium hydrides are effectively used, especially for ease of handling during layer formation work,
In terms of e supply efficiency g, etc., GeH4, Ge, f-1,
.

Ge and H8 are preferred.

Many halogen compounds are effective as the raw material gas for introducing halogen atoms used in the present invention, such as halogen gas, halides, interhalogen compounds, halogen-substituted silane conductors, etc. Preferred examples include halogen compounds that can be gasified.

Further, silicon hydride compounds containing halogen atoms, which are in a gaseous state or can be gasified and have silicon atoms and halogen atoms as constituent elements, can also be mentioned as effective in the present invention. Suitable in the present invention. Specifically, halogen compounds that can be used include fluorine, chlorine, bromine, and iodine (7).
Hatff Gengas, BrF, cJF', CIF
, .

BrF, e BrF, 19 IFs + IFy *
■C1* IBr etc. (D halogen compounds can be mentioned.

As a silicon compound containing a halogen atom, so-called a silane conductor substituted with a halogen atom, specifically, for example, S
Preferred examples include silicon halides such as iF4.5i2F, 8iCz4.5iBr, and the like.

When forming the characteristic photoconductive member of the present invention by a glow discharge method using such a silicon compound containing a halogen atom, hydrogen is used as a raw material gas capable of supplying 8+ together with a raw material gas for supplying Ge. A light-receiving layer made of a-8iGe containing halogen atoms can be formed on a desired support without using silicon oxide gas.

When producing a light-receiving layer containing halogen atoms according to the glow discharge method, basically e, silicon halide, which serves as a raw material gas for supplying Si, germanium hydride, which serves as a raw material gas for supplying Ge, and Ar; Gases such as H, He, etc. are introduced into a deposition chamber in which a photoreceptive layer is formed in a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases. A photoreceptive layer can be formed on a desired support by using these gases, but in order to more easily control the ratio of hydrogen atoms introduced, these gases may further contain hydrogen gas or hydrogen atoms. A desired amount of silicon compound gas may also be mixed to form a layer.

Moreover, each gas may be used not only as a single species but also as a mixture of multiple species at a predetermined mixing ratio.

In order to introduce halogen atoms into the layer formed by either the sputtering method or the ion blating method,
What is necessary is to introduce a gas of the above-mentioned halogen compound or a silicon compound containing the above-mentioned halogen atoms into the deposition chamber to form a plasma atmosphere of the gas.

In addition, when introducing hydrogen atoms, the raw material gas for introducing hydrogen atoms, such as H, or the above-mentioned silanes or/
Gases such as germanium hydride and the like may be introduced into a deposition chamber for sputtering to form a plasma atmosphere of the gases.

In the present invention, the above-mentioned halogen compounds or halogen-containing silicon compounds are effectively used as raw material gases for introducing halogen atoms, but HF, He/.

HBr, 1-II, etc. (D Hao Hydrogen saponide, S
1H2F, , SiH,I2゜SiH,C7? ,
, 5it(Cz3.SiH,Br2.5iHBr
, isohalogen-substituted silicon hydride, and GeHF, ,
GeH2F', , GcH,F.

GeHC#s, GeH,C/, , GeH,CI
! , Ge1-IBr, , GeH2Br, .

GeH,Br, GeHI, , GeHtI, ,
Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium such as GeH and I,
()eF4 e GeCZ410eB '49GeI4
．． GeF, , GeC1! , , GeBr, ,
Gaseous or gasifiable substances such as germanium 1 halides such as GeI2 can also be mentioned as effective starting materials for forming the photoreceptive layer.

Among these substances, halides containing hydrogen atoms introduce hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, at the same time as halogen atoms are introduced into the layer when forming the photoreceptive layer. , is used as a suitable raw material for introducing halogen in the present invention.

In order to structurally introduce hydrogen atoms into the photoreceptive layer, in addition to the above, H, or S in, , S i, H,, S
i, H8゜5i4f(,o etc.) with germanium or germanium compound for supplying Ge, or Ge1(4,Ge,H,,I Ge,H,,Ge,
H,,,Ge,H+,I Ge6fI, 4°Ge7H,
,,Ge,H,,,Ge,H,. This can also be carried out by causing germanium hydride such as the like and silicon or a silicon compound for supplying Si to coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, the amount of hydrogen atoms (H') or the amount of halogen atoms (X) contained in the photoreceptive layer of the photoconductive member to be formed, or the sum of the pupils of hydrogen atoms and halogen atoms. (H+X) is preferably 0.01 to 40 a
tomic%, preferably 0.05 to 30 ato+
nic%, preferably 0.1 to 25 atomic%.

To control the amount of hydrogen atoms (H) and/or halogen atoms (X) contained in the photoreceptive layer, for example, the temperature of the support and/or the amount of hydrogen atoms (H) or halogen atoms (X
) may be controlled by controlling the amount of the starting material introduced into the deposition system, the discharge force, etc.

In the present invention, in order to provide the nine-layer region (N) containing nitrogen atoms in the photoreceptive layer, when forming the photoreceptive layer, the starting material for introducing nitrogen atoms is added to the above-described starting material for forming the photoreceptive layer. It may be used together with the starting material and contained in the formed layer while controlling its amount.

When the glow discharge method is used to form the layer region (N), a starting material for introducing nitrogen atoms is added to one selected as desired from among the starting materials for forming the photoreceptive layer described above. As the starting material for introducing nitrogen atoms, most of the gaseous substances containing at least nitrogen atoms or gasified substances that can be gasified can be used.

Effective raw material gases for introducing carbon atoms include:
For example, the constituent atoms are C and H, for example, the number of carbon atoms is 1 to 5.
saturated hydrocarbons, ethylene hydrocarbons having 2 to 5 carbon atoms,
Examples include acetylene hydrocarbons having 2 to 4 carbon atoms.

Specifically, as a saturated hydrocarbon, methane (CH4)
, -1-tough (CtHa) + propy (C,H,
), n-buta'' (n-C4HIO) e-pentane (Cal'L), ethylene hydrocarbons include ethylene (CtL), propylene (C-Ha)-butene-1(C4H8)-buty-2( CtHa)-isobutylene (04H8)-pentene (CtHt o )-acetylene hydrocarbons include acetylene (CtHt )
, methylacetylene (C5H4), butyne (CJI)
a) etc.

In addition to these, Si(CHII)4-bt(CtH
-) 4 and the like can be mentioned.

In the present invention, the layer region (C) may further contain oxygen atoms or Fi/nitrogen atoms in addition to carbon atoms in order to enhance the fK effect obtained by carbon atoms. Examples of raw material gases for introducing oxygen atoms to introduce oxygen atoms into the layer region CC) include oxygen (0,), ozone (0,), -nitrogen oxide (NO), and nitrogen dioxide (NO).
), -nitrogen dioxide (N20), sesquioxide (N20
．． ), trinitric oxide (NtOt), nitrogen pentoxide (N, 0.), nitrogen trioxide (NO,).

Silicon atom (Si), oxygen atom (0) and hydrogen atom (
1-1) as constituent atoms, for example, disiloxane (
HsSiO8iH*) -F disiloxane (H,5i
Examples include lower siloxanes such as O8il-1,08iH,).

Nitrogen atoms (N) used when forming layer region (C)
Starting materials that can be effectively used as raw material gases for introduction include nitrogen (Nt), ammonia (NH
*), hydrazine (H, NNH,), hydrogen azide ()
Nitrogen compounds such as gaseous or gasifiable nitrogen, nitrides, and azides, such as iN, ammonium azide (NH4N, ), etc. can be mentioned.In addition, introduction of nitrogen atoms (N) In addition to this, halogen atoms (X) can also be introduced, so that nitrogen halides such as nitrogen trifluoride (FIN) v nitrogen tetrafluoride (F4N2) can be used.

To form the layer region (N) by the sputtering method, a single crystal or polycrystalline Si wafer or C wafer, or a wafer containing a mixture of Si and C is targeted when forming the photoreceptive layer. These may be performed by sputtering in various gas atmospheres.

For example, if a Si wafer is used as a target, the raw material gas for introducing carbon atoms and optionally hydrogen atoms and/or halogen atoms is diluted with a diluent gas as necessary, and the material gas is used in a sputtering deposition chamber. into the Si wafer 2, - to form a gas plasma of these gases.
All you have to do is sputter.

Alternatively, if Si and C are used as separate targets, or if a single target containing Si and C is used, it is possible to use hydrogen atoms in an atmosphere of dilution gas as a sputtering gas or at least hydrogen atoms. This is accomplished by sputtering in a gas atmosphere containing (H) or/and halogen atoms (X) as constituent atoms. As the raw material gas for carbon atom introduction, the raw material gas for carbon atom introduction among the raw material gases shown in the glow discharge example described above can be used as an effective gas also in the case of sputtering.

In the present invention, when a layer region (C) containing carbon atoms is provided when forming a photoreceptive layer, the layer region (C)
By changing the distribution concentration C (C) of carbon atoms contained in K stepwise in the layer thickness direction, a desired distribution shape u(de) in the layer thickness direction is obtained.
In order to form a layer region (C) having a pth profile), in the case of a four-discharge, the starting material gas for introducing carbon atoms whose distribution concentration C (C) is to be changed is changed by adjusting the gas flow rate. This is accomplished by introducing the compound into the deposition chamber while changing the name appropriately according to the desired variation curve.

For example, it may be done by any commonly used method, such as manually or by an external drive motor, or by appropriately changing the opening of a predetermined needle pulp provided in the middle of the gas flow path system.

When forming the layer region (C) by a sputtering method, the distribution concentration C (C) of carbon atoms in the layer thickness direction is changed stepwise in the layer thickness direction to obtain a desired distribution state (C) of carbon atoms in the layer thickness direction. In order to form the depth prof 1le), firstly, as in the case of the glow discharge method, the starting material for introducing carbon atoms is used in a gaseous state, and the gas when introducing the gas into the deposition chamber is This is accomplished by appropriately changing the flow rate as desired.

Secondly, a sputtering target, for example 8
If a target containing a mixture of i and C is used, this can be achieved by changing the mixing ratio of Si and C in advance in the layer thickness direction of the target.

In the photoreceptive layer, there is a substance that controls the conduction properties, e.g.
To structurally introduce group atoms or group V atoms, during layer formation, a starting material for introducing group (I) atoms or a starting material for introducing group V atoms is introduced in a gaseous state into a deposition chamber. It may be introduced together with other starting materials for forming the photoreceptive layer.

As a starting material for introducing such group m atoms, it is desirable to employ a material that is gaseous at room temperature and pressure, or that can be easily gasified at least under layer-forming conditions. Specifically, as a starting material for introducing such a group Ⅰ atom, for introducing a boron atom, Tokigo, B4H, is used. ,
B, H@, B, H,,.

H6H,. , B, H□, l(, H,4, etc., boron halides such as BFs, BC1*-BB r, etc.).In addition, AlCl5 t Ga
CZ, l*Ga(CHs)s, InCl! , ,
Tz(:4°, etc.) can also be mentioned.

In the present invention, the starting materials for introducing group (IV) atoms that are effectively used for introducing phosphorus atoms are PH,
Hydrogen north neighbors of P, H, etc., PH, I, PF, .

PF, , Pct, , PO2,, PBr, , P
Examples include nonorogenated phosphorus such as Br, PI, and the like. In addition, AsH,, AsF, , ASCI! , .

AsBr3. AsF, , SbH,, SbF, ,
8bF, , 8bCI! , , 5bC1! , .

BiH,, B1C1! , , BiBrR, etc. can also be mentioned as effective starting materials for introducing Group V atoms.

In the present invention, the layer thickness of the layer region constituting the light-receiving layer and containing a substance that controls conduction properties and provided unevenly on the support side is defined as the thickness of the layer region formed on the layer region and the layer region formed on the layer region. The lower limit is preferably 30 λ or more, more preferably 40
It is desirable that the thickness be λ or more, optimally 50 Å or more.

In addition, when the content of the substance (C) that controls conduction properties contained in the layer region is 30 atomic pP or more, the upper limit of the layer thickness of the layer region is preferably 10 μm or less, preferably It is desirable that the thickness be 8μ or less, and optimally 5μ or less.

The support used in the present invention may be electrically conductive or electrically insulating. Examples of the conductive support include NiCr and stainless steel.

A/? , Cr, Mo, Au, Nb,
Examples include metals such as Ta, V, Ti, Pt, and Pd, and alloys thereof.

Polyester is used as the electrically insulating support.

Polyethylene, polycarbonate, cellulose acetate, polypropylene, polyvinyl chloride.

Films or sheets of synthetic resins such as polyvinylidene chloride, polystyrene, polyamide, etc., and glass.

Ceramic, paper, etc. are commonly used. Preferably, at least one surface of these electrically insulating supports is conductively treated, and another layer is preferably provided on the conductively treated surface side.

For example, if it is glass, □ has NiCr on its surface.

Ae, Cr, Mo, Au, Ir, Nb, 'I'a, V,
Ti, Pt, Pd.

In, O,, SnO,, ITO (In, 0, -1-5n
02), etc., or if it is a synthetic resin film such as a polyester film, N'Cr*klsAg*
Pd * Zne N ' * Au * Cr, M
A thin film of metal such as O, Ir, Nb, Ta, V, Ti, Pt, etc. is provided on the surface by vacuum evaporation, electron beam evaporation, sputtering, etc., or the surface is laminated with the above metal to make the surface conductive. gender is given. The shape of the support is cylindrical.

The photoconductive member 1 shown in FIG.
If 00 is used as an electrophotographic image forming member, it is desirable to use an endless belt or cylindrical shape for continuous high-speed copying. The thickness of the support is determined as appropriate so that the desired photoconductive member is formed, but if flexibility is required as a photoconductive member, the thickness of the support may be determined appropriately so that the photoconductive member has sufficient flexibility. It is made as thin as possible within the range.

In such cases, the thickness is preferably 10μ or more in view of manufacturing and handling of the support, mechanical strength, etc.

Next, an outline of an example of a method for manufacturing the light guide 11 of the present invention will be described.

Fig. 16 shows an example of a photoconductive member manufacturing apparatus. The gas cylinders 1102 to 1106 in the figure are sealed with raw material gas for forming the photoconductive member of the present invention. For example, 1102 is 5i114 gas diluted with He (99.999% purity).

Hereinafter, it will be abbreviated as S iH,/He. ) cylinder, 1103 is H
Ge1 (4 gas (pure Iji99.999
%, hereinafter abbreviated as GeH,, /He. ) cylinder, 1104
is S I F4 gas diluted with He (purity 99.99
%, hereafter S i L! It is abbreviated as '4/l-1e. ) cylinder, 1105 is a C, H4 gas (purity 99.999X) cylinder, and 1106 is a H2 gas (purity 99.999%) cylinder.

In order to flow these gases into the reaction chamber 1101, valves 1122 to 1126 of gas cylinders 1102 to 1106 are used.
, confirm that the leak pulp 1135 is closed, and also check that the inflow pulps 1112 to 1116 and the outflow pulp 11
After confirming that 17 to 1121, auxiliary valves 1132 and 1133 are open, first open the main valve 1134 to exhaust the reaction chamber 1101 and each gas pipe. Next, the reading on the vacuum gauge 1136 is approximately 5 x 10'tor.
When the time reaches r, the auxiliary valves 1132 and 1133 and the outflow pulps 1117 to 1121 are closed.

Next, to give an example of forming a light-receiving layer on the cylindrical substrate 1137, Si
H,/He gas, gas cylinder l 103 p GeI
-I, /He gas, gas cylinder 1105! I) C2
) (4 gases by opening valves 1122, 1123.1124 and adjusting the pressure of outlet pressure gauge 1127.1128.1129 to 1~/crl, and inlet valve 1112.111
3. Gradually open 1114 and install mass flow controller 1.
107°, 1108, and 1109, respectively. Subsequently, the outflow valves 1117, 11.18, 1119 and the auxiliary valve 1132 are gradually opened to supply each gas to the reaction chamber 1.
101. At this time, the outflow valve 1117.11
18.

1119 and also adjust the opening of the main pulp 1134 while checking the reading on the vacuum gauge 1136 so that the pressure inside the reaction chamber 1101 reaches the desired value.

After confirming that the temperature of the substrate 1137 is set to a temperature in the range of approximately 50 to 400°C by the heater 1138, the power source 1140 is set to the desired power and a glow discharge is caused in the reaction chamber 1101. At the same time, according to a pre-designed rate of change curve, the flow rate of C, H4 gas is changed manually or by using an external drive motor, etc. to appropriately change the opening of the pulp 1]18. Control the outer concentration of carbon atoms contained.

Further, during layer formation, it is desirable that the base 1137 be rotated at a constant speed by a motor 1139 in order to ensure uniform layer formation.

Examples will be described below.

Example 1! Using the manufacturing apparatus shown in FIG. 16, samples (sample A 1l-1-13-6) as electrophotographic image forming members were prepared on a cylindrical M substrate under the conditions shown in Table 1. table).

The content distribution concentration of germanium atoms in each sample is the first
7, and the distribution concentration of carbon atoms is shown in FIG. 18.

Place each sample obtained in this way in a charging exposure experiment device.■5. Corona charging was performed for 0.3360 minutes using OKV, and a light image was immediately irradiated. A light image is generated using a tungsten lamp light source, 21. A light amount of <ux-s> was irradiated through a transmission type test chart.

Immediately thereafter, a good toner image was obtained on the imaging member surface by cascading ml of e-loaded developer (including toner and carrier) through the imaging member coating. The toner image on the image forming member is processed by 5. When transferred onto transfer paper using OKV's corona charging, the resolution was poor in all samples, and the i+1L had a clear bacterial concentration with good gradation reproducibility.
A ji image was obtained.

In the above, the light source is replaced by a tungsten lamp81
The image quality of the toner transfer image was evaluated for each sample under the same toner image forming conditions except that the electrostatic image was formed using a 0 nm GaAs semiconductor laser (1 OmW). In all cases, the resolution is excellent, and the gradation reproducibility is clear and high quality! Ii image was obtained.

Example 2 Using the manufacturing apparatus shown in FIG. 16, samples (samples //a211 to 23-6) as electrophotographic image forming members were prepared on a cylindrical base under the conditions shown in Table 3. (Table 4).

Germanium atom content distribution r'i in each sample
iI'i, Fig. 17 also shows the carbon atom content distribution mI)
i is shown in FIG.

When each of these samples was subjected to the same image evaluation test as in Example 1, all of the samples provided high quality toner transfer images. Father, each sample at 38℃, 80%1
'When repeated use tests were conducted 200,000 times in the LH environment, no deterioration in image quality was observed for any of the samples. Common layer creation conditions are shown below.

Substrate temperature: germanium atom (Ge) containing layer...
・About 200℃ discharge frequency: 13.56 MH! Reaction chamber pressure during reaction: 0.3 Torr

[Brief explanation of drawings]

FIG. 1 is a schematic layer structure diagram for explaining the layer structure of the photoconductive member of the present invention, and FIGS. 2 to 1O are explanatory diagrams for explaining the distribution of germanium atoms in the photoreceptive layer, respectively. , 11th
Figures 15 to 15 are explanatory views for explaining the distribution state of carbon atoms in the photoreceptive layer, Figure 16 is a schematic explanatory view of the apparatus used in the present invention, Figures 17 and 8 are Each figure is a distribution state diagram showing the state of the distributed concentration of each atom in the implementation rows of the present invention. 100... Photoconductive member 101... Support body 102.
...Photoreceptive layer OC (:Z'/C(c) □C(C) -C(c)

Claims (1)

[Scope of Claims] (1) Comprising a support for a photoconductive member and a photoreceptive layer showing photoconductivity and made of an amorphous material containing silicon atoms and germanium atoms; The receptor layer contains carbon atoms, and the distribution concentration in the layer thickness direction is C(1).
, C(3!, C(21) A photoconductive member characterized by having a first layer region, a third layer region, and a second layer region in this order from the support side (however, C(3) cannot be the maximum by itself, and ''')C(11,C(21,C
(If any one of 31 is 0, the other two are 0.
(2) The photoconductive member according to claim 1, wherein the photoreceptive layer contains hydrogen atoms. (3) The photoconductive member according to claims 1 and 2, wherein the photoreceptor J@ contains a halogen atom. +41 The photoconductive part I according to claim 1, wherein the distribution state of germanium atoms in the photoreceptive layer is non-uniform in the layer thickness direction. (5) The photoconductive member according to claim 1, wherein the distribution state of germanium atoms in the photoreceptive layer is uniform in the layer thickness direction. (6) The photoconductive member according to claim 1, wherein the photoreceptive layer contains a substance that controls conductivity. (The photoconductive member according to claim 6, wherein the substance governing force conductivity is an atom belonging to Group 111 of the periodic table. (8) The substance governing conductivity is an atom belonging to Group V of the periodic table. The optical member according to claim 6, which is an atom that exhibits a chemical reaction.