JPS6055350A - Photoconductive member - Google Patents

Abstract

PURPOSE:To enhance resolution by forming a substrate for a photoconductive member and a photoreceptive layer composed of a layer region made of an amorphous substance contg. Ge and a conductivity governing substance, and a photoconductive layer region made of an amorphous material contg. Si and N. CONSTITUTION:A Ge-contg. layer region 103 made of a-Ge(SI,H,X), and a photoconductive layer region 104 made of a-Si(H,X) are laminated in this order on a substrate 101, and a photoreceptive layer 102 is composed of the layer regions 103 and 104. Said layer region 103 contains a substance for governing conductivity, such as Ge, in a distribution continuous and uniform in the film thickness direction and in the plane direction in parallel to the surface of the substrate 101. Further, the photoreceptive layer 102 contains N in an amt. properly selected in accordance with the characteristics required for the layer region itself, and the relationship between the layer region and the substrate 101.

Description

[Detailed description of the invention] The present invention is based on light (here, light in a broad sense, ultraviolet light).

The present invention relates to photoconductive members that are sensitive to electromagnetic waves such as visible light, infrared light, X-rays, gamma rays, etc.

A photoconductive layer is formed in a solid-state imaging device, an electrophotographic image forming member in the image forming field, or a document reading device.

As a photoconductive material, it has high sensitivity, low signal-to-noise ratio [photocurrent (Ip
)/81H! ! It has a high current (Id)), has absorption spectrum characteristics that match the spectrum characteristics of the electromagnetic waves to be irradiated, has fast photoresponsiveness, has a desired dark resistance value, and is harmless to the human body during use. Furthermore, solid-state imaging devices are required to have characteristics such as being able to easily process afterimages within a predetermined time. Particularly in the case of an electrophotographic image forming member that is incorporated into an electrophotographic apparatus used in an office as a photographic machine, the above-mentioned non-polluting property during use is an important point.

Based on this point, amorphous silicon (hereinafter referred to as a-8i) is a photoconductive material that has recently attracted attention.
No. 55718 describes its application as an image forming member for electrophotography, and German Publication No. 2933411 describes its application to a photoelectric conversion/reading device. However, the conventional photoconductive A photoconductive member having a layer includes:
Comprehensive improvements in electrical, optical, and photoconductive properties such as dark resistance, photosensitivity, and photoresponsiveness, usage environment properties such as moisture resistance, and stability over time. The reality is that there are points that need to be improved and that can be further improved.

For example, when applied to an electrophotographic image forming member, when trying to achieve high photosensitivity and high dark resistance at the same time, in the past, it has often been observed that residual potential remains during use, and this type of When a conductive member is repeatedly used for a long period of time, fatigue due to repeated use accumulates, and a so-called cost phenomenon occurs in which an afterimage occurs. Or,
Repeated use at high speeds often causes disadvantages such as a gradual decrease in responsiveness.

Furthermore, a-81 has a relatively smaller absorption coefficient in the long wavelength region than in the short wavelength region of the visible light region, making it suitable for matching with semiconductor lasers currently in practical use. In addition, when using commonly used halodan lamps and fluorescent lamps as light sources, there is still room for improvement in that they cannot effectively use light on the long wavelength side. There is.

In addition, if the irradiated light is not absorbed sufficiently in the photoconductive layer and the amount of light reaching the support increases, the support itself will reflect the light that has passed through the photoconductive layer. When the ratio is high, interference due to multiple reflections occurs within the photoconductive layer, which is one of the causes of "single blur" in the image.

This effect becomes more significant as the irradiation spot is made smaller in order to increase the resolution, and is particularly a serious problem when a semiconductor laser is used as the light source.

Furthermore, when forming a photoconductive layer using an a-8t material, in order to improve its electrical and photoconductive properties, hydrogen atoms, fluorine atoms, chlorine atoms, etc., and 7% rhodan atoms, as well as electrically conductive Boron atoms, phosphorus atoms, etc. are contained in the photoconductive layer as constituent atoms to control the type, or other atoms are included in order to improve other properties, but the manner in which these constituent atoms are contained is In some cases, problems may arise with the electrical or photoconductive properties of the formed layer.

That is, for example, the lifetime of photocarriers generated by light irradiation in the formed photoconductive layer may not be sufficient, or the injection of charge from the support side may not be sufficiently prevented in dark areas. There are many cases.

Furthermore, when the layer thickness exceeds 10-odd microns, the layer may lift or peel off from the support surface, or the layer may peel off or peel off as the time elapses after it is left in the air after being removed from the vacuum deposition chamber for layer formation. This resulted in problems such as cracks forming in the surface. This phenomenon often occurs especially when the support is a drum-shaped support commonly used in the field of electrophotography, and there are points that can be solved in terms of stability over time. .

Therefore, while efforts are being made to improve the properties of the a-8t material itself, it is necessary to take measures to solve all of the above-mentioned problems when designing photoconductive members.

The present invention has been made in view of the above-mentioned points, and is characterized by its applicability and applicability to a-8T as a photoconductive member used in electrophotographic image forming members, solid-state imaging devices, reading devices, etc. As a result of comprehensive research and consideration from this point of view, we have discovered an amorphous material that uses silicon atoms as its base material and contains at least either a hydrogen atom (H) or a halogen atom (X), so-called hydrogenated amorphous silicon, and halogenated amorphous material. Silicon or halodane-containing hydrogenated amorphous silicon [hereinafter referred to as r
a-8l (H, Electrically conductive materials exhibit extremely excellent properties in practical use.
It is superior in all respects to conventional photoconductive materials, and has particularly excellent properties as a photoconductive material for electrophotography, as well as absorption spectrum characteristics on the long wavelength side. It is based on the points that have been found to be superior to

The present invention has stable electrical, optical, and photoconductive properties at all times, is an all-environment type with almost no restrictions on usage environments, and has excellent photosensitivity on the long wavelength side and is resistant to light fatigue. The main object of the present invention is to provide a photoconductive member that is extremely durable, does not exhibit any deterioration phenomenon even after repeated use, and has no or almost no residual potential observed.

Another object of the present invention is to provide a photoconductive member that has high photosensitivity in the entire visible light range, has excellent matching with semiconductor lasers in particular, and has fast photoresponse.

Another object of the present invention is to have excellent adhesion between a layer provided on a support and the support and between each layer of laminated layers,
It is an object of the present invention to provide a photoconductive member that is dense and stable in terms of structural arrangement and has high layer quality.

Another object of the present invention is to maintain charge retention during charging processing for electrostatic image formation to such an extent that ordinary electrophotography can be applied very effectively when applied as an image forming member for electrophotography. It is an object of the present invention to provide a photoconductive member which has sufficient performance and excellent electrophotographic properties with almost no deterioration of the properties observed even in a humid atmosphere.

Still another object of the present invention is to provide a photoconductive member for electrophotography that can easily produce high-quality images with high density, clear halftones, and high resolution.

Yet another object of the present invention is high photosensitivity.

It is an object of the present invention to provide a photoconductive member having high signal-to-noise ratio characteristics and good electrical contact with a support.

The photoconductive member of the present invention includes a support for the photoconductive member, a first layer region composed of an amorphous material containing germanium atoms, and an amorphous material containing silicon atoms. A second layer region composed of a material and exhibiting photoconductivity, and a photoreceptive layer having a layered structure provided in order from the support side, and a substance controlling conductivity in the first layer region. and the photoreceptive layer contains nitrogen atoms.The photoconductive member of the present invention, which is designed to have the above-mentioned layer structure, solves the above-mentioned problems. Especially when applied as an electrophotographic image forming member, there is no influence of residual potential on image formation, its electrical characteristics are stable, it is highly sensitive, and it has a high signal-to-noise ratio. It has excellent light fatigue resistance and repeated use characteristics, and can stably and repeatedly produce high-quality images with high density, clear halftones, and high resolution.

In addition, the photoconductive member of the present invention has a photoreceptive layer formed on the support, which has a strong layer structure and excellent adhesion to the support, and can be continuously used at high speed and for a long time. Can be used repeatedly.

Further, the photoconductive member of the present invention has high photosensitivity in the entire visible light range, is particularly excellent in matching with semiconductor lasers, and has fast photoresponse.

Hereinafter, the photoconductive member of the present invention will be explained in detail with reference to the drawings.

FIG. 1 is a diagram schematically showing the layer structure of a photoconductive member according to a first embodiment of the present invention.

The photoconductive member 100 shown in FIG. 1 has a photoreceptive layer 102 on a support 101 for the photoconductive member, and the photoreceptive layer 102 has a tenth layer on a free surface 105e. Layer region (G) 103 and u-8t (
H.

A second layer region C3)1 composed of X) and having photoconductivity
It has a layered structure in which 04 and 04 are stacked in one country.

The germanium atoms contained in the first layer region (G) 103 are continuous and uniform in the thickness direction of the first layer region (G) 1030 and in the in-plane direction parallel to the surface of the support 1.01. The first layer region (G)
Contained in 103.

In the photoconductive member 100 of the present invention, at least the first
The layer region (G) 103 contains a substance (C) that controls conduction characteristics.
) is included to give the first layer region CG) 103 the desired conductive properties.

In the present invention, the substance (C) that controls the conductive properties contained in the first layer region (G) 103 is uniformly distributed over the entire layer region of the first layer region (G) 103 without any edges. It may be contained or may be contained so as to be unevenly distributed in a part of the layer region of the first layer region (G) 103.

In the present invention, a substance (C)″f that controls conduction characteristics: When contained in the first layer region (G) so as to be unevenly distributed in a part of the first layer region (G) is the substance (C)
The layer region (PN) containing is preferably provided as an end layer region of the first layer region (G).

In particular, when the layer region (PN) is provided as an end layer region on the support side of the first layer region (G), the substance (C) contained in the layer region (PN) By appropriately selecting the type and content thereof as desired, it is possible to effectively prevent charge of a specific polarity from being injected from the support into the photoreceptive layer.

In the photoconductive member of the present invention, the substance (C) capable of controlling conduction properties is added to the first layer region (G) constituting a part of the photoreceptive layer as described above. It is intended to be contained throughout the layer region (G) not on the blade side or unevenly distributed in the layer thickness direction, but furthermore, it is contained in the second layer region (S) provided on the first layer region (G). ) may also contain the substance (C).

When the substance (C) is contained in the second layer region (S), the type, content and amount of the substance (C) must be determined before it is contained in the first layer region (G). Depending on the manner of inclusion, the type and amount of the substance (C) to be included in the second layer region (S), and the manner of inclusion are determined as appropriate.

In the present invention, the substance <
C>, it is preferable that the substance be contained in at least the layer region including the contact interface with the first layer region (G).

In the present invention, the substance (C) is added to the second layer region (S
) may be contained in the entire layer area without the blade side, or,
It may be contained uniformly in a part of the layer region.

When both the tenth layer region (G) and the second layer region (S) contain a substance (C) that controls conduction characteristics, the substance (C) in the first layer region (G) It is desirable that the layer region containing the substance (C) and the layer region containing the substance (C) in the second layer region (S) are provided so as to be in contact with each other. Further, the substance * (C) contained in the first layer region (G) and the second layer region (S) is contained in the first layer region (G) and the second layer region (S). They may be of the same type or different types, and their content may be the same or different in each layer region.

However, in the present invention, if the substance (C) contained in each layer region is the same in both, it is necessary to increase the content in the first layer region (G) sufficiently. , or substances (C) t-1 having different electrical properties are preferably contained in each desired layer region.

In the present invention, at least the photoreceptive layer f and the constituting first layer region (G) contain a substance (C) that controls conduction properties.
The conductive properties of the layer region containing the substance (C) (which may be part or all of the first layer region (G)) are controlled as desired. However, as such a substance,
The so-called impurities in the semiconductor field can be mentioned, and in the present invention, a constituting the photoreceptive layer to be formed is
For −8IGe(H, Specifically, p-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as B(
(boron), AA' (aluminum) + Ga (gallium), In (indium), T/ (thallium), etc., and particularly preferably used are B +
It is Ga. Examples of n-type impurities include atoms belonging to Group ■ of the periodic table (Group ■ atoms), such as P (phosphorus) and As.
(arsenic), sb (antimony), Bl (bismuth), etc., and particularly preferably used is P+A.
It is s.

In the present invention, the content in the layer region (PN) in which the substance controlling conduction characteristics is contained is
If the layer region (PN) is provided in direct contact with the support, the conductivity properties required for the organic Depending on the relevance, it can be selected as appropriate.

In addition, the relationship with other layer regions provided in direct contact with the layer region (PN) and the characteristics at the contact interface with the other layer regions is also considered, and the material that controls the conduction characteristics is determined. The content is selected appropriately.

In the present invention, the content of the substance (C) that controls conduction properties contained in the layer region (PN) is preferably 0.01 to 5 x 10' atomic ppm.
% is preferably 0.5 to I x 10' atom
ie ppm s optimally 1-5 x 103ato
It is preferable that the amount is mic ppm.

In the present invention, the content of the substance (C) that governs the conduction characteristics in the layer region (PN) containing the substance (C) is preferably 30 atomic ppm or more, more preferably 50 atomic ppm or more. Atomic ppm or higher, optimally 10
For example, when the substance to be contained is the above-mentioned p-type impurity, when the free surface of the photoreceptive layer is subjected to polar charging treatment, by The substance to be contained can effectively prevent the injection of electrons into the n
In the case of type impurities, when the free surface of the photoreceptive layer is charged to θ polarity, the injection of holes from the support side into the photoreceptor layer can be completely blocked.

In the above case, as mentioned above, the layer region (P
In the 1-region (Z) of the part excluding N), there is a layer region (PN
) may contain a substance <c>' which controls the conduction characteristics of a conduction type polarity different from the conduction type polarity of the substance (C) which governs the conduction characteristics contained in the substance (C), or may have the same polarity. A material (C) that controls conductivity and has a conductivity type of is added to a layer region (P
The actual amount υ contained in N) may also be much smaller.

In such a case, the content of the substance controlling the conductive properties contained in the layer region (Z) is
) is determined as desired depending on the polarity and content of the substance contained in the substance, but preferably 0.
001-1000 atomic ppm.

More preferably 0.05-500 atomic ppm
% is desirably 0.1 to 200 atomic ppm.

In the present invention, when the layer region (PN) and the layer region (Z) contain the same type of substance (C) that controls conductivity, the content in the layer region (Z) is preferably teeth,
It is desirable that the content be 30 ppm or less.

In the present invention, a layer region containing a substance controlling conductivity having one polar conductivity type in the photoreceptive layer;
It is also possible to provide a so-called depletion layer in the contact region by directly contacting a layer region containing a conductivity-dominant substance having a conductivity type of the other polarity. For example, the layer region containing the p-type impurity and the layer region containing the n-type impurity are provided in the photoreceptive layer so as to be in direct contact with each other to form a so-called p-n junction. Thus, a depletion layer can be provided.

In the present invention, the 20th layer region (S) provided on the first layer region (G) does not contain damanium atoms, and a photoreceptive layer is formed in such a layer structure. By doing so, it is possible to obtain a photoconductive member that has excellent photosensitivity to light of all wavelengths from relatively short wavelengths to relatively short wavelengths including the visible light region.

In addition, the distribution state of germanium atoms in the first layer region (CG) is such that germanium atoms are continuously distributed in the entire layer region, so that the distribution state of germanium atoms in the first layer region (G) and the second layer region (G) is When using a semiconductor radar, etc., which has excellent affinity with (S), the first layer region ( G) can be substantially completely absorbed and interference due to reflection from the support surface can be prevented.

Since each of the materials has a common constituent element of silicon atoms, chemical stability is sufficiently ensured at the laminated interface.

In the present invention, the content of kermanium atoms contained in the first layer region (G) may be determined as desired so as to effectively achieve the object of the present invention.
Preferably 1-10XIO atomic Plum), preferably 100-95X10 atomic ppm
.

Optimally, it is desirable to set the content to 500 to 8Xi Oatomle ppm.

In the present invention, the first J layer region (G) and the second layer region (
The layer thickness of the photoconductive member S) is one of the important factors for effectively achieving the object of the present invention. Great care must be taken during design.

In the present invention, the layer thickness TB of the first layer region (G) is preferably 301 to 50μ, more preferably 401 to 50μ.
It is desirable that the thickness be 40μ, most preferably 501 to 30μ.

Further, the layer thickness T of the second layer region (8) is preferably 0.
5 to 90μ, preferably 1 to 801t, optimally 2
It is desirable that the thickness be ~50μ.

The sum (TB + T) of the layer thickness Tn of the first layer region (G) and the layer thickness T of the second layer region (S) is based on the characteristics required for both layer regions and the characteristics required for the entire photoreceptive layer. It is suitably determined as desired when designing the layers of the photoconductive member, based on the organic relationship between the properties and the characteristics to be used.

In the photoconductive member of the present invention, the numerical range of (TR+T) is preferably 1 to 100μ, more preferably 1 to 80μ, and most preferably 2 to 50μ.

It is desirable to select an appropriate numerical value for each wolf that satisfies the following relationship.

In selecting the numerical values of the layer thickness TB and the layer thickness T in the above case, the relationship "C1" preferably satisfies TB/T≦0.9, optimally TB/T≦0.8. It is desirable that the values of layer thickness TB and layer thickness T be determined such that

In the present invention, the content of dalmanium atoms contained in the first layer region (G) is lXl0 atomicpp
m or more, it is desirable that the layer thickness TB of the first layer region (G) be as thin as possible, preferably 30 μm.
Hereinafter, the thickness is preferably 25μ or less, most preferably 20μ or less.

In the photoconductive member of the present invention, in order to increase photosensitivity and dark resistance, and further improve the 1"iHf property between the support and the photoreceptive layer, contains oxygen atoms.The oxygen atoms contained in the photoreceptive layer may be contained in the entire layer area of the photoreceptive layer without cutting edges, or may be contained in a part of the photoreceptive layer. One layer may be provided only in the layer region and may be unevenly distributed.

Further, regarding the distribution state of nitrogen atoms, the distribution concentration C(N) may be uniform or non-uniform in the layer thickness direction of the photoreceptive layer.

In the present invention, when the main purpose of the layer region (N) containing nitrogen atoms provided in the photoreceptive layer is to improve photosensitivity and dark resistance, the entire layer region of the photoreceptive layer is When the main purpose is to strengthen the adhesion between the support and the light-receiving layer, the light-receiving layer is provided so as to occupy the support-side end layer region of the light-receiving layer.

In the former case, the content of nitrogen atoms contained in the layer region (N) is kept relatively low in order to maintain high photosensitivity, while in the latter case, it ensures enhanced adhesion with the support. For the purpose of achieving both the former and the latter at the same time, it is desirable to have a relatively large number of
Either the nitrogen atoms are distributed at a relatively high concentration on the support side and the nitrogen atoms are distributed at a relatively low concentration on the free surface side of the photoreceptive layer. It is sufficient to form a distribution state of nitrogen atoms in the layer region (N) such that nitrogen atoms are not actively contained.

In the present invention, the content of nitrogen atoms contained in the layer region (N) provided in the photoreceptive layer depends on the characteristics required for the layer region (N) itself, or when the layer region (N) is attached to the support. When provided in direct contact with the support, it can be appropriately selected depending on the organic relationship, such as the relationship with the properties at the contact interface with the support.

In addition, when another layer region is provided in direct contact with the layer region (N), the relationship with the characteristics of the other layer region and the characteristics at the contact interface with the other layer region The nitrogen atom content is appropriately selected with consideration given to the following.

The amount of nitrogen atoms contained in the layer region (N) is determined as desired depending on the properties required of the photoconductive member to be formed, but is preferably OD, 01 to 50 at.
omic%, preferably 0.002” (Oat
omlc%, optimally 0.003-30 atomic
% is preferable.

In the present invention, whether the layer region (N) occupies the entire area of the photoreceptive layer or even if it does not occupy the entire area of the photoreceptor layer, the layer thickness T of the photoreceptor layer is equal to the layer thickness TO of the layer area (N). When the proportion of nitrogen atoms in the layer region (N) is sufficiently large, it is desirable that the upper limit of the content of nitrogen atoms contained in the layer region (N) is set to be sufficiently smaller than the above value.

In the case of the present invention, if the ratio of the layer thickness TO of the layer region (N) to the layer thickness T of the photoreceptive layer is 2/5 or more, The upper limit of the amount of nitrogen atoms is preferably 30 atomic% or less, more preferably 20 atomic% or less, and optimally 10 atomic% or less.
It is desirable that it be atomic% or less.

2 to 10 show typical examples of the distribution state of nitrogen atoms contained in the layer region (N) of the photoconductive member in the present invention in the layer thickness direction.

2 to 10, the horizontal axis shows the distribution concentration C of nitrogen atoms, the vertical axis shows the layer thickness of the layer region (N), and tll indicates the position of the end surface of the layer region (N) on the support side. , tT indicates the position of the end surface of the layer region (N) on the side opposite to the support side. In other words, the layer region containing nitrogen atoms is on the tl side (F)
Layer formation is performed toward the tr side.

FIG. 2 shows a first typical example of the distribution state of nitrogen atoms contained in the layer region (N) in the layer thickness direction.

In the example shown in FIG. 2, from the interface position tB where the surface of the support where the nitrogen atom-containing layer region (N) is formed and the surface of the layer region (N) contact, to the position tl, Nitrogen atoms are contained in the layer region (N) where the nitrogen atoms are formed while taking a constant value of C1, and the distribution concentration C of nitrogen atoms is at the position t1.
In other words, at the 0 interface position tT, where the concentration C2 is gradually and continuously reduced from the concentration C2 to the interface position 11, the distribution concentration C of nitrogen atoms is set to C3.

In the example shown in FIG. 3, the distribution concentration C of the contained nitrogen atoms is W%1i from position tB to position tT.
1 at position tT by gradually decreasing continuously from tCs.
A distribution state is formed such that the temperature becomes C5 once.

In the case of FIG. 4, the distribution concentration C of nitrogen atoms is kept constant at the concentration C6 from position tB to multiple positions t2; At tT, the distribution concentration C is substantially zero (
(Here, "substantially zero" means that the amount is less than the detection limit).

In the case of FIG. 5, the distribution concentration C of nitrogen atoms is continuously and gradually reduced from the concentration 08 from the position ta to the position tl, and becomes substantially zero at the position t7.

In the example shown in FIG. 6, the nitrogen atom distribution concentration C is a constant value of concentration C9 between the position ti+ and the position 13, and is the concentration C10 at the position tT.

Between the position t3 and the position tT, the distribution density C is linearly decreased from the position t3 to the multiple positions tT.

In the example shown in FIG. 7, the distribution concentration C is at position t1.
The distribution state is such that the density C11 takes a constant value from the position t4 to the multi-position t4, and decreases linearly from the density C12 to the density C13 from the position t4 to the multi-position tT.

In the example shown in FIG. 8, position 1. Further up to position 11, the distribution concentration C of nitrogen atoms decreases in a linear function so as to reach substantially zero from the concentration C14.

In FIG. 9, from position tm to position t5, the distribution concentration C of nitrogen atoms decreases linearly from concentration C15 to concentration C16, and between position t5 and position tT, the concentration An example in which C16 is set to a constant value is shown.

In the example shown in FIG. 10, the distribution concentration C of nitrogen atoms is at the concentration C17 at the position ti, and this concentration C+7 is initially decreased slowly as υ until it reaches the position Rt6, and then it decreases as υ around the position t6. In the case of
At t6, the concentration is set to Cta.

Between position t6 and position t7, the concentration is first rapidly decreased, and then it is gradually decreased until the concentration reaches 9 at position t7, and between position t7 and position t8, the concentration is extremely low. It is slowly and gradually decreased to reach the concentration C20 at position t8. Between position t8 and position tT,
The density is reduced to substantially zero from 020 according to a curve shaped as shown in the figure.

As described above in FIGS. 2 to 10, some typical examples of the distribution state of nitrogen atoms contained in the layer region (N) in the layer thickness direction, in the present invention, the support side has a portion with a high distribution concentration C of nitrogen atoms, and the interface LT
On the side, a distribution of nitrogen atoms is provided in the layer region (N) in which the distribution concentration C is considerably lower than on the support side.

In the present invention, the layer region (N) containing nitrogen atoms constituting the photoreceptive layer is the localized region (B) containing nitrogen atoms at a relatively high concentration on the support side as described above. It is desirable that the support be provided as having the following properties, and in this case, the adhesion between the support and the light-receiving layer can be further improved.

The localized region (B), explained using the symbols shown in FIGS. 2 to 10, is preferably provided within 5 μm from the interface position fftti.

In the present invention, the localized region (B) is located at the interface position t
It may be the entire layer region (LT) up to a thickness of n to 5 μm, or it may be a part of the layer region (LT).

Whether the localized region is a part or all of the layer region (LT) is determined as appropriate depending on the characteristics required of the photoreceptive layer to be formed.

The localized region (B) has the maximum distribution concentration Cma of nitrogen atoms as the distribution state of the nitrogen atoms contained therein in the layer thickness direction.
x is preferably 500 atomlc ppm or more,
Preferably 800 atomic ppm above JJ,
It is desirable that the layer be formed in such a way that a distribution state of at least 100° atomic ppm can be obtained.

That is, in the present invention, the layer region 0) containing nitrogen atoms has a layer thickness within 5 μm from the support (5 μm from 1B).
It is desirable to form the layer so that the maximum value Cmax of the distribution concentration exists in the thick layer region).

In the present invention, specific examples of the halokene atom (a) contained in the photoreceptive layer as necessary include fluorine, chlorine, bromine, and iodine, particularly in the layer region of fluorine. For example, to form a 2000 pores, it is possible to form a 100% polyurethane by a private method that utilizes a discharge phenomenon such as glow lightning, sputtering, or ion blating. ~ Shoulder 1 A raw material gas for introducing hydrogen atoms θ and/or a raw material gas for introducing halogen atoms (a) is introduced at a desired gas pressure into a deposition chamber whose interior can be reduced in pressure, and the pressure is removed from the deposition. It is sufficient to form R1. In addition, when forming by sputtering method, for example, Ar + He
A target composed of Si or a target composed of Si in an atmosphere of an inert atmosphere such as N or a mixture of gases such as If necessary, T(e
If necessary, the source gas for Ge supply diluted with a diluent gas such as Ar, hydrogen atoms ( The above-mentioned Kugut may be sputtered while introducing it into a deposition chamber and forming a plasma atmosphere of a desired gas, and controlling the gas flow rate of the raw material gas for supplying Ge according to a desired rate of change curve.

In the case of the ion blating method, for example, polycrystalline silicon or crystalline silicon and polycrystalline germanium or solid-crystalline rumanium are housed in a deposition boat as evaporation sources, and these evaporation sources are used by the combined anti-heating method or This can be carried out in the same manner as in the case of the stumbling method, except that the evaporated material is heated and evaporated by the electron beam method (FB method) or the like, and the flying evaporated material is passed through the desired gas plasma.

The substances that become the raw material gas for supplying S1 used in the present invention include S1■■4. Si2■■6.513
H8S14)T. Silicon hydride (silanes) in a gaseous state or in the form of a gas is recommended for effective use, especially for its ease of handling during layer-forming operations and good Si supply efficiency. In this respect, SiF4,812■■6 is considered to be preferable.

GeH
41Ge2H6h Gey, HB * G114H10
1Ge5H121Ge6Ht4. Ge, H161Ge6
Germanium hydride in a gaseous state or capable of being gasified, such as H1+3 + GepT (28), is mentioned as one that can be effectively used, especially for ease of handling during layer forming operations, Ge
GeH4, Ge 2H6, G
e 3HB is preferred.

Month 1 for introducing halogen atoms used in the present invention,
Many halogen compounds are effective as stinging gases, such as halogen gases, halogenated 119η, halogenated inter9ine compounds, halogenated silane-conductors, and other halogenated compounds in a gaseous state or that can be gasified. is preferred.

In addition, [, +1] can also be effectively used in the present invention as a silicon hydride compound containing a halogen gas, which is in a gaseous state or can be gasified and has a silicon atom and a halogen gas as constituent elements. .

Specifically, halogen compounds that can be suitably used in the present invention include fluorine, chlorine, bromine, iodine,
y r: y is S, RrF, C1F, C1F,
.

BrF5. RrF3. IF3. IF, #IC
1, intergenic compounds such as IBr, etc. can be mentioned.

Examples of silicon compounds containing halogen atoms, so-called silane conductors containing halogen atoms, include, for example, S
iF4.5t2F6.5ict4. Silicon halides such as SiBr4 are preferred.

When forming the characteristic Y7 layer rod member of the present invention by the glow discharge method using such a silicon compound containing a halogen atom, the raw material for supplying Ge is 5it-
Even if silicon hydride gas is used as a raw material gas that can be supplied, a-8i containing halogen atoms can be formed on a desired support.
A book is produced in which the first layer region (@) consisting of Ge is formed.

When creating the first layer (G) containing halogen gas according to the glow discharge method, basically, for example, silicon halide is used as a raw material gas for supplying St, and hydrogen is used as a raw material gas for supplying Ge. Germanium chloride and Ar*H2*T
A gas such as Ie is introduced into the deposition chamber for forming the first layer region at a predetermined mixing ratio and gas flow rate, and a glow discharge is generated to form a plasma atmosphere of these gases. A first layer region (G) is deposited on the desired support by
However, in order to make it easier to control the introduction ratio of hydrogen atoms, a desired amount of hydrogen gas or a silicon compound gas containing hydrogen atoms may be further mixed with these gases to form a layer. It may be formed.

In addition, each gas can be multi-flyed at a predetermined mixing ratio with just a single cylinder.
Nt? There is no problem even if it is used in conjunction with Fj.

In order to introduce rhodan atoms into the layer formed in any of the cases of snow, tuttering, and ion blating methods, a gas of a silicon compound containing the above-mentioned rhodan compound or a halide of Le is used. It is very effective to introduce hydrogen atoms into the deposition chamber to form a plasma atmosphere of the gas.Also, when introducing hydrogen atoms, the raw material for introducing hydrogen atoms is, for example, ■I2, Alternatively, gases such as the above-mentioned silanes and/or germanium hydride may be introduced into the deposition chamber for sintering to form a plasma π atmosphere of the gases.

In the present invention, the above-mentioned nitrogen compounds or silicon compounds containing nitrogen are effectively used as raw materials for introducing nitrogen atoms. , JTF, HCI, HBr
.

Hao such as HI1) f Hydrogen heptaide, 5iiT2F2 #
5III2I2.

5jH2C42,5IHCt, , SiHBr,
Halo2 gen # substituted silicon hydride such as 5iHBr3, and GeHF3*GeT(2
F2.

GeH3F, GeHCl5, Ge112C12
, Ge3H1-, GeHBr5°GeHBr5. GeH
Halides containing hydrogen atoms as one of their constituent elements, such as hydrogenated germanium halide of Br5, GeF41GeC14
1GeBr4. Gel4r Ge1i”2+GeCt2
1 Germanium halides such as GeBr2゜G6I2, etc., or substances that can be converted into gases are also effective.
: 1 layer region) is formed).

The hydrogen atoms in these substances are as follows:
When forming the first layer region (G), hydrogen atoms, which are extremely effective in controlling electrical or photoelectric properties, are also introduced into the layer at the same time as the introduction of rodan atoms into the layer. Used as raw material for introduction.

In order to structurally introduce hydrogen atoms into the first layer region), in addition to the upper P, H2, 5IH4, Si2H6°SI
H, 5t4H, o and other silicon hydrides with germanium or rumanium compounds for supplying Go, or with G
eH4, Ge2H6, Ge3H81Ge4H4゜, G
e5I(12°Ge6H,4,Ge7H16*Ge3
41 can also be carried out in which H81 germanium and silicon or a silicon compound for supplying Sl coexist in the deposition chamber to generate a discharge.

In a preferred example of the present invention, hydrogen atoms (QT) contained in the layer region (G) of T1 of the photoconductive phase to be formed
(D m or...the sum of 11 of the hydrogen atom and the halogen atom (H x '') is preferably 0, 01 to 40 atomic 'Ir, more preferably It is desirable that the content be 0.05 to 30 atomic %, and 0.1 to 25 atomic % for 9 Ji.

In order to control the hydrogen atom distribution/and the location atom (3) contained in the support, for example, the support vorticity distribution/and the hydrogen atom concentration or the rodan atom (3) can be controlled. The amount of the starting material used for inclusion into the deposition apparatus system, the electric power per discharge, etc. may be controlled by fljj.

In the present invention, the second
In order to form the layer region 0), the starting material (I) for forming the first layer region 0), excluding the starting material that will become the raw material gas for supplying Ge, is mixed into the starting material (I) for forming the first layer region 0). 2 layer area (
S) Using the starting materials for formation (■)], the first layer side v? It can be performed according to the same method and moxibustion conditions as in the case of forming 0).

That is, in the present invention, in order to form (the second layer side area formed by &) with a-810T, Vacuum J11 using discharge phenomenon: fi'ti
done by law. For example, by the glow discharge method,
A-8i()J,X) The second layer side branch (S)
To form , basically the silicon atoms described above (,
In addition to the raw material gas for supplying St that can supply Sl), if necessary, the raw material gas for introducing hydrogen atoms)/and... the raw material gas for introducing location atoms (3) can be fed into a sedimentation chamber whose internal pressure can be reduced. is introduced into the chamber to create a glow discharge within the deposit, and onto a predetermined support surface that has been previously placed in place.
It is sufficient to form a layer consisting of −8t(T(,
Ar + T (hydrogen atoms θ■) or/and halogen atoms (3 ) A substance that controls the gas to be introduced (C), for example, an open region containing the substance (C) by structurally introducing atoms of group M or group V (
PN) i To form a photoreceptive layer, during layer formation, a starting material for introducing Group I atoms or a starting material for introducing Group V atoms is placed in a gaseous state in a deposition chamber to form a photoreceptive layer. It may be introduced together with other starting materials. It is desirable to use a starting material for the introduction of the ladder group (I) atoms that is gaseous at room temperature and pressure, or that can at least be easily gasified under layer-forming conditions. Examples of starting materials for introducing Group I atoms, such as B 2 K6, B 4 H, etc., include B 2 K6, B 4 H, etc. * B5H7
+Bs)(+,.

86H,. , B6Tl, 2. Examples include boron hydrides such as H6N, 4, etc., and boron hydrides such as BF'3°BCl2, BBr3, etc.).

In addition, AtC1,I GaCt31 Ga(Cl13
), , InCl3°TtC15, etc. can also be mentioned.

In the present invention, effective starting materials for the introduction of Group Ⅰ atoms include FT (3
, P2IT4, etc., next to the water bed north, PT (4I, PF,
.

PF5. PCl5, PCj5, PBr3.
PBr3. PI3 and other halogenated phosphorus are attached to the north. In addition, A8H, r AsF.

AlIC1, AgBr3, AsF5, 5bH5
r SbF5.5bCL3゜5bC15, Bib3.
BiCl3. BfBr3 and the like can also be mentioned as effective starting materials for introducing Group V atoms.

In the present invention, in order to provide a layer side region containing 9 element atoms in the photoreceptive layer, the starting material for introducing 9 element atoms is added to the above-mentioned photoreceptor layer forming material during the formation of the photoreceptor layer. It may be used together with the starting materials and contained in the layer to be formed while controlling its amount.

When the glow discharge method is used to form the layer side branch, the starting material η for introducing nitrogen atoms is added to the starting materials for forming the photoreceptive layer that have been reversely refracted as desired. . As a starting material for such nitrogen atom introduction,
Although at least nitrogen atoms are used as atoms, most of the gaseous substances or gasified substances 1717 that can be gasified can be used.

For example, a source gas containing silicon atoms (si), an atomic gas containing nitrogen atoms (eJ)'e, and water p4 atoms (J) or halocarne atoms (3) as necessary. B is used by mixing with the raw material gas as the constituent atoms at a desired mixing ratio, or silicon atoms (Sl)
1f7'+ raw material gas and nitrogen atom (to)
It is also possible to mix and use hydrogen atoms συ with It゛ and raw materials with R atoms at a mixing ratio of 7 points ρJ.

In addition, a silicon atom (sl), a hydrogen atom (I), and a nitrogen atom (
You may use a mixture of raw material gases having constituent atoms of (f)).

The starting material that can be effectively used as a raw material gas for introducing nitrogen atoms used in forming the open region (to) is a starting material containing N as a constituent atom or containing N and H. For example, nitrogen (N2), a7-E-=7 (N
H3), HiP? Shin (H2NNII, ),
7 Hydrogen silicide ()TN, ), ammonium azide (
9 gaseous or gasifiable elements such as Ni14N3),
Nitrogen compounds such as vacancies and azides can be praised. In addition to this, nitrogen trifluoride (F3N) can be used because in addition to the introduction of 9 elemental atoms, it is also possible to introduce heloquine atoms).

Non-halogenated compounds such as nitrogen tetrafluoride (F4N2) 1
can be left behind.

In this case, in order to further enhance the effect obtained by nitrogen atoms, oxygen atoms can be contained in the layer region in addition to nitrogen atoms. For example, oxygen (02), ozone (0
, ), -re nitrogen (No), nitrogen dioxide (No2)
, -nitrogen dioxide (N20), nitrogen sesquioxide (N20.
), trinitrogen tetraoxide (N204), pentoxide (N20
5), nitrogen dioxide (No3), silicon atom (Si)
and oxygen atom 1)) and hydrogen atom θJ) $j! Heptad atoms, for example, disiloxane (n3S+osuI3)
, trisiloxane (H3S 1O8iH20S 1
Examples include lower siloxanes such as H3).

To form the layer region ()I) containing nitrogen atoms by sputtering, a monocrystalline or polycrystalline Sl wafer or a SI3N4 wafer or a Sl and 5ISN4
A wafer containing a mixture of .

For example, if a Sl wafer is used as a target, the raw material gas for introducing nitrogen atoms, hydrogen atoms if necessary, and halogen atoms can be diluted with a diluent gas as necessary, and the - The old wafer may be introduced into a deposition chamber to form a gas plasma of a sludge or the like to cause the old wafer to splatter.

Alternatively, SI and S i 3N4 can be used as separate targets, or by using a mixed target of 513N4 and 513N4 in an atmosphere of diluent gas or at least hydrogen as a gas for snow kitters. atom(
6) or/and by stumbling in a gas atmosphere containing halogen atoms (3) as constituent atoms. As the raw material gas for introducing nitrogen atoms, the raw material gas for introducing grapheme atoms in the raw material gas shown in the glow discharge example mentioned above is S! It can also be used as an effective gas in the case of vine ringing.

In the present invention, when forming a layer region 1) containing nitrogen atoms when forming a light-receiving layer, the distribution concentration CI) of nitrogen atoms contained in the side region of the layer is adjusted in the layer thickness direction. By changing the distribution state in the desired layer thickness direction (depth profile
In order to form a layer region (to) having a concentration of C (e), in the case of a glow discharge, the gas of the starting material for the introduction of nitrogen atoms whose distribution concentration C (good) is to be varied is adjusted to the desired gas flow rate. This is accomplished by introducing the material into the deposition chamber while changing it appropriately according to the rate of change curve.

For example, the opening of a predetermined needle/lube provided in the middle of the gas flow path system may be gradually changed by a commonly used method such as manual operation or an external drive motor. . At this time, the rate of change in flow stitching does not need to be linear; for example, a microcomputer or the like can be used to control the flow stitch according to a change rate curve drawn in advance to obtain a desired content rate curve.

When forming the Nitrogen atoms by the sintering method (Procedure JI IIIVJ), the distribution concentration cH of nitrogen atoms in the layer thickness direction is changed in the layer thickness direction to obtain a desired distribution state (depth profile) of nitrogen atoms in the layer thickness direction. To form this, first, as in the glow discharge method, a starting material for introducing nitrogen atoms is used in a gaseous state, and the gas flow fi>- when introducing the gas into the deposition chamber is This can be done by appropriately changing as desired.

Secondly, the target for sputtering is, for example, St
If a target mixed with 513N4 and Si3N4 is used, this can be done by changing the mixing ratio of SI and 513N4 in advance in the layer thickness direction of the target.

In the present invention, the amount of hydrogen atoms θ■) or halogen atoms Qc) contained in the second layer region (S) constituting the FM of the photoreceptor 1- to be formed, or the amount of hydrogen atoms and・The sum of the amounts of Rodan atoms (H+X) is preferably 1 to 40ato
mic% + more preferably 5 to 30 atomic%
, it is optimally desirable to set it to 5 to 25 atomic ratios.

The support used in the present invention may be electrically conductive or electrically insulating. As a lightning conductor and sexual support,
For example, N N i Cr + stainless steel, At.

Cr, Mo, Au, Nb+ Ta, V, T'
1, Pt+Pd, or alloys thereof.

As an electrically insulating support: 1. ]? Ripolitel, 19
Liethylene, polycarzenate, cellulose, acetate, polypropylene, polyvinyl chloride, polyvinylidene chloride 1.4? Films or sheets of synthetic 4JJ resins such as listyrene, mortaramide, glass ceramics, paper, etc. are commonly used. Preferably, at least one surface of these electrically insulating supports is subjected to electrostatic treatment, and another layer is preferably provided on the electroconductively treated surface side.

For example, if it is glass, N I Cr is applied to the surface of the glass.
+Atr Cr, No, Au+ Ir, Nb,
Ta, v, 'rt, Ptt Pd *In2O,
, SnO2, ITO (In, 0. + 5nO2), etc. to provide conductivity.
Or if it is a synthetic resin film such as polyester film, NiCr+ Atl Ago Pbn Zn+
Ni, Au+Cr, Mo.

Ir, N13. Thin films of Ta, V, TI, and Pt@ metals are deposited by vacuum evaporation, electron beam evaporation, and S-? Conductivity is imparted to the surface by providing the surface with vine ring or the like, or by laminating the surface with pre-HC metal.

The shape of the support may be any shape such as a circular shape, a belt shape, a plate shape, etc.↓1.The shape is determined depending on the need, but for example, the photoconductive part 1oo in FIG. Since it is used as an image forming member for continuous high-speed copying.
,・For the first case, it is desirable to have an endless belt shape or a cylindrical shape. The length of the support is determined according to the pressure required to form the desired light guide member, but if burnability is required as a photoconductor, the support may be枦f
within the range where il is fully exhibited.1. It is thinned as much as possible. However, in such a case, from the viewpoint of the construction and handling of the support, it is preferable to
It is assumed to be on a 10μ plate.

Next, an outline of an example of a method for manufacturing a photoconductive part of the present invention will be explained.

FIG. 11 shows an example of a manufacturing apparatus for the photoconductive part H.

1102-1106 in the diagram I? The original gas for forming the photoconductive member of the present invention is sealed in the chamber. For example, 1102 is Sl, F (4 gas (purity: 99.999) diluted with Ire.

Rejected 5IR4/TI (abbreviated as l) cylinder, 11 (1
3 is GoTI4 diluted with Ile (purity 99.9).
99%, abbreviated as IM Ge114Ale. ) den 4
．． 1104 is diluted with He and becomes 9B2ll6 gas (purity 9
9.99%, Lj lower B2) (abbreviated as 67ft) cylinder, 1105 is NH3 gas (purity 99.999%) s
e pump, 11o6 is H2 scum (99.999 purity)
) It is Palumpe.

In order to cause these gases to flow into the reaction chamber 11o1, the gas y
T? 102-110617) Valve 1122
~112 (i, make sure the leak pulp 1135 is closed, and also check the inflow valves 1112 ~ 1116, the outflow valves 1117 ~ 1121. Auxiliary pulp 1132.1
After confirming that the main pulp 1133 is opened, the main pulp 1134 is first opened to exhaust the inside of the reaction chamber 1101 and each gas pipe. Next, the reading on the vacuum gauge 1136 is approximately 5 x 10
-'torr, auxiliary pulp 1132,11
33. Close the outflow valves 1117-1121.

Next, an example of forming a light-receiving layer on the cylindrical substrate 1137 is as follows: gas H? S from Npe 11o2
1114/I [e gas, gas g7pe 11o3') G
eH4/) (e gas, gas Hr pump 11o4 B 2
H6, “TIeI2 gas pump 1105! 7 NH
, open the pulps 1122-1125, adjust the pressure of the outlet pressure gauges 1127-113° to 1 kg/cm'', gradually open the inlet valves 1J12-1115,
4 Flow Co. y) A-51107 to 1110 respectively. Subsequently, outflow valves 1117-1120. The auxiliary pump/l/7'' 1132 is gradually opened to allow each gas to flow into the reaction chamber 11o1.
, /rTe fS flow and Ge H4//)Te gas flow rate and B2H6/)Ie and N)I3 Outflow valves 1117 to 1120 so that the ratio of gas flow to a desired value is achieved.
Also, vacuum so that the pressure inside the reaction chamber 11o1 reaches the desired value! +' 113 Adjust the opening of the main valve 1134 while checking the fi reading. and the base 11
The temperature of 37 is set by heating heater 1138 to 50 to 400.
After confirming that the temperature is set within the range of °C, the power supply 1140 is set to the desired power to generate glow discharge in the reaction chamber 11o1 and maintain the glow discharge for a desired time,
A layer region (B, N) containing a-8IGe (H,

1 - At the stage where the regions (B, N) are formed to the desired WJ thickness, the outflow valves 1118.1119. Completely closing each of the H2O and changing the discharge conditions as necessary A -8i (H,
A layer region (S) composed of X) is formed, and the formation of the photoreceptive layer is completed.

During the formation of the above-mentioned photoreceptive layer, the boron atoms contained in the layer are stopped by stopping the flow of B2H6/He gas or NH3 gas into the deposition chamber after a desired period of time has elapsed after the start of layer formation. The thickness of each layer of the layer region (B) containing nitrogen atoms and the layer gradient V eave containing nitrogen atoms can be arbitrarily controlled.

Also, according to the desired rate of change curve, N to the deposition chamber 1101 is
By controlling the gas flow rate of H3, layer region Po1
Seven distribution states of nitrogen atoms contained therein can be formed as desired.

During layer formation, it is desirable that the base 1137 be rotated at a constant speed by a motor 1139 in order to ensure uniform layer formation.

Examples will be described below.

Example 1 A cylindrical At
Layers were formed on the substrate under the conditions shown in Table 1 to obtain an electrophotographic image forming member.

The image forming section obtained in this way is installed in a charging exposure experiment apparatus; 5. Corona charging is performed between Q and 3 IIce at QkV, and the optical image is immediately illuminated. A light image was created by using a tungsten lamp light source and projecting a light amount of 2 Lux-sec along a transmission type test chart.

Immediately thereafter, a good toner image was obtained on the surface of the imaging member by cascading a θ-charged developer (including toner and carrier) over the surface of the imaging member. When the toner image on the image forming member was transferred onto transfer paper by corona charging at 5.0 kV, a clear high 54 degree image with excellent image certainty and good gradation reproducibility was obtained.

Example 2 An electrophotographic image forming member was obtained by forming layers using the manufacturing apparatus shown in FIG. 11 and using the same conditions as in Example 1 except for conditions not shown in Table 2.

The image shape obtained in this way was printed on transfer paper under the same conditions and procedures as in Example 1, except that the charge polarity and the charge polarity of the developer were opposite to those in Example 1. When the image was formed, the image quality was extremely clear.

Example 3 Using the manufacturing apparatus shown in Figures 2p and z, layers were formed in the same manner as in Example 1 except for the JV under the conditions shown in Table 1, to obtain an electrophotographic image forming member.

An image was formed on a transfer paper using the image forming member thus prepared under the same conditions and procedures as in Example 1, and an extremely clear image quality was obtained.

Fruit (Example 4) In Example 1, GeJT/rIa gas and 5IT (
By changing the ratio of 4/He gas to
An electrophotographic image forming member was prepared in the same manner as in Example 1 except for the changes shown in the table.

Regarding the image forming member thus obtained, an image was formed on a transfer paper under the same conditions and procedures as in Example 1.
The results shown in the table were obtained.

Example 5 Electrophotographic imaging members were prepared in the same manner as in Example 1, except that the first layer thickness was changed as shown in Table 5.

For each image forming member thus obtained, an image was formed on a transfer paper under the same conditions and procedures as in Example 1, and the results shown in Table 5 were obtained.

Example 6 A cylinder-shaped At
Layers were formed on the substrate under the conditions shown in Tables 6 to 8 to form electrophotographic image forming members (sample editions 6o1 and 60).
2,603) was obtained.

Each of the image-forming particles thus obtained was placed in a charged RT light experimental device.05. Corona charging was performed at OkV for 0.3 see, and a light image was immediately irradiated. A light image was obtained using a tungsten lamp light source, and the last month of 2 b1x*gec was irradiated through a transmission type test chart.

Immediately thereafter, (1) a chargeable developer (containing toner and carrier) was cascaded over the surface of each image forming member to obtain a good one-plane toner image on the upper surface of each image forming member. The toner image on each imaging member is set to 05.05. When transferred onto transfer paper using OkV corona charging, a clear, high-density image with excellent resolution and good gradation reproducibility was obtained.

Example 7 Layer formation was carried out using the manufacturing apparatus shown in FIG. 11 under the conditions shown in Tables 9 and 10, and in the same manner as in Example 1, to form an electrophotographic image forming member. h (trying on I5.7
01,702) were obtained.

For each image forming section side obtained in this way, Example 1
When an image was formed on transfer paper under the same conditions and procedures as described above, an extremely clear image quality was obtained.

Example 8! According to the manufacturing equipment shown in Figure W11, Tables 11 to 1
Layer formation was carried out in the same manner as in Example 1 except that the conditions shown in Table 5 were used to form each electrophotographic image forming member (K material A30).
1-805) were obtained.

Using the thus obtained image forming area, a double-sided image was formed on a transfer paper under the same conditions and procedures as in Example 1, and an extremely clear image quality was obtained.

Example 9 Toner image formation was carried out in the same manner as in Example 1, except that an 810 nm GaAs semiconductor laser (10 mW) was used instead of the tungsden lamp as the light source to form an electrostatic image. Image 5 of a toner transfer image for an electrophotographic image forming member prepared under the same conditions as in Example 1! When evaluated, it was found that clear, high-quality images with excellent resolution and good gradation reproducibility were obtained.

Common layer creation conditions in the above embodiments of the present invention are shown below.

Substrate temperature: Germanium atom (Ge) containing layer: approx. 200°C Dalmanium atom (Ge) non-containing layer: approx. 2
50℃ discharge frequency: i 3.56 MHz Reaction chamber pressure during reaction: 0.3 Torr

[Brief explanation of the drawing]

FIG. 1 is a schematic layer structure diagram for explaining the layer structure of the photoconductive part of the present invention, and FIGS. 2 to 10 are layer area diagrams.)
Explanatory diagram for explaining the distribution state of nitrogen atoms in the 11th
The figure is a schematic explanatory diagram of an apparatus used to produce the photoconductive member of the present invention in a dormitory example. 100... Photoconductive member 101... Support body 102.
・・Photoreceptive layer 111→-C -11111ka-C -111→-C

Claims (5)

[Claims] (1) a support for a photoconductive member; a first layer region disposed on the support and composed of an amorphous material also containing rumanium atoms; and a first layer region comprising silicon atoms; A second layer region made of an amorphous material and exhibiting photoconductivity, and a light-receiving layer having a layered structure provided in order from the support side, and controlling conductivity to the first layer region. 1. A photoconductive member, characterized in that the photoreceptive layer contains a nitrogen atom. (2) The photoconductive member according to claim 1, wherein at least one of the first layer region and the second layer region contains hydrogen atoms. (3) The photoconductive member according to claim 1 or 2, wherein at least one of the first layer region and the second layer region contains halodan atoms. (4) The photoconductive member according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group Ⅰ of the periodic table. (5) The photoconductive member according to claim 1, wherein the substance that controls conductivity is an atom belonging to Group Ⅰ of the periodic table.