JPS6057611A - 分子線源シヤツタ - Google Patents

分子線源シヤツタ

Info

Publication number
JPS6057611A
JPS6057611A JP14550783A JP14550783A JPS6057611A JP S6057611 A JPS6057611 A JP S6057611A JP 14550783 A JP14550783 A JP 14550783A JP 14550783 A JP14550783 A JP 14550783A JP S6057611 A JPS6057611 A JP S6057611A
Authority
JP
Japan
Prior art keywords
beam source
cell
shutter
molecular beam
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP14550783A
Other languages
English (en)
Japanese (ja)
Other versions
JPH0554253B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html
Inventor
Shigeru Okamura
茂 岡村
Junji Saito
淳二 斉藤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Fujitsu Ltd
Original Assignee
Fujitsu Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Fujitsu Ltd filed Critical Fujitsu Ltd
Priority to JP14550783A priority Critical patent/JPS6057611A/ja
Publication of JPS6057611A publication Critical patent/JPS6057611A/ja
Publication of JPH0554253B2 publication Critical patent/JPH0554253B2/ja
Granted legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
JP14550783A 1983-08-09 1983-08-09 分子線源シヤツタ Granted JPS6057611A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP14550783A JPS6057611A (ja) 1983-08-09 1983-08-09 分子線源シヤツタ

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14550783A JPS6057611A (ja) 1983-08-09 1983-08-09 分子線源シヤツタ

Publications (2)

Publication Number Publication Date
JPS6057611A true JPS6057611A (ja) 1985-04-03
JPH0554253B2 JPH0554253B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-12

Family

ID=15386846

Family Applications (1)

Application Number Title Priority Date Filing Date
JP14550783A Granted JPS6057611A (ja) 1983-08-09 1983-08-09 分子線源シヤツタ

Country Status (1)

Country Link
JP (1) JPS6057611A (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359318U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1986-10-07 1988-04-20

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813515U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-07-02 1973-02-15
JPS54122766U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-02-15 1979-08-28
JPS54180662U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-06-12 1979-12-20
JPS60129126U (ja) * 1984-02-06 1985-08-30 日本電気株式会社 分子線エピタキシ装置
JPS6150326A (ja) * 1984-08-20 1986-03-12 Fujitsu Ltd 半導体結晶成長装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4813515U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1971-07-02 1973-02-15
JPS54122766U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-02-15 1979-08-28
JPS54180662U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1978-06-12 1979-12-20
JPS60129126U (ja) * 1984-02-06 1985-08-30 日本電気株式会社 分子線エピタキシ装置
JPS6150326A (ja) * 1984-08-20 1986-03-12 Fujitsu Ltd 半導体結晶成長装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6359318U (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) * 1986-10-07 1988-04-20

Also Published As

Publication number Publication date
JPH0554253B2 (GUID-C5D7CC26-194C-43D0-91A1-9AE8C70A9BFF.html) 1993-08-12

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