JPS6056344A - Scanning type reflecting electron diffraction microscope apparatus - Google Patents

Scanning type reflecting electron diffraction microscope apparatus

Info

Publication number
JPS6056344A
JPS6056344A JP16321983A JP16321983A JPS6056344A JP S6056344 A JPS6056344 A JP S6056344A JP 16321983 A JP16321983 A JP 16321983A JP 16321983 A JP16321983 A JP 16321983A JP S6056344 A JPS6056344 A JP S6056344A
Authority
JP
Japan
Prior art keywords
diffraction
aperture
sample
reflected
image
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
JP16321983A
Other languages
Japanese (ja)
Other versions
JPH0586022B2 (en
Inventor
Masakazu Ichikawa
昌和 市川
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Hitachi Ltd
Original Assignee
Hitachi Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Ltd filed Critical Hitachi Ltd
Priority to JP16321983A priority Critical patent/JPS6056344A/en
Publication of JPS6056344A publication Critical patent/JPS6056344A/en
Publication of JPH0586022B2 publication Critical patent/JPH0586022B2/ja
Granted legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01JELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/26Electron or ion microscopes; Electron or ion diffraction tubes
    • H01J37/295Electron or ion diffraction tubes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)

Abstract

PURPOSE:To obtain small size electron diffraction microscope apparatus with excellent operability and image processing capability by providing a deflection system and aperture between a sample and phosphorus plate or electron detector and converting an optical signal generated by electrons passing through the aperture into a brightness modulated signal of the cathode ray tube. CONSTITUTION:A part of reflected diffraction beam 8 obtained when the primary electron beam 4 is fixed to the surface of sample 7 passes a shielding plate 16 and further smaller part passes an aperture 11 to form a bright spot on a phosphorus plate 9. An optical signal depending on the bright spot is received by a photo conversion element 12 through an observation window 10 and is converted into an electrical signal and it is used as the brightness modulated signal of the cathode ray tube CRT 18 for reflected diffraction beam. In this case, a deflection coil group 17 is operated by the scanning power supply 19 for reflected diffraction beam, the reflected diffraction beam 8 passing a magnetic field shielding plate 16 is deflected and a brightness modulated image synchronized with such deflection is displayed on the CRT 18.

Description

【発明の詳細な説明】 〔発明の利用分野〕 本発明は試料表面の結晶性を分析する走査型反射電子回
折顕微装置の改良に関し、特に、反射回折像を螢光板上
でなく陰極管上((表示することを可能にすることによ
って、装置の小型化、操作性向上、画像処理能力の向上
全図る機構に関するものである。
Detailed Description of the Invention [Field of Application of the Invention] The present invention relates to an improvement in a scanning backscattered electron diffraction microscope for analyzing the crystallinity of a sample surface. (This relates to a mechanism that reduces the size of the device, improves its operability, and improves its image processing ability by making it possible to display images.)

〔発明の背景〕[Background of the invention]

従来の走査型反射′電子回折顕微装置でに、試料 □表
面上の分析点の結晶構造を知るために、螢光板上に反射
回折像を形成する。しかし、反射回折像から充分な情報
を得るためには螢光板が大きくなり結果として装置が大
型化する2反射回折像中の回折スポットを・ψ、くする
場合に機械的操作にたよらさるえなく操作性が良くない
1反射回折像金画1珍処理する場合二次元画像を画素分
割して記憶する等の特別な装置を必要とする。という欠
点が従来装置にほろり、何らかの対策が望まれていた。
With a conventional scanning reflection electron diffraction microscope, a reflection diffraction image is formed on a fluorescent plate in order to determine the crystal structure of the analysis point on the surface of the sample. However, in order to obtain sufficient information from the reflection diffraction image, it is necessary to rely on mechanical operations to reduce the diffraction spots in the reflection diffraction image. When processing one reflection diffraction image gold painting, which is not easy to operate, special equipment is required to divide the two-dimensional image into pixels and store it. Conventional devices suffer from this drawback, and some kind of countermeasure has been desired.

〔発明の目的〕[Purpose of the invention]

したがって、本発明の目的は、反射回折像を・螢光板上
ではなく、陰極線管上に得ることを可能にすることによ
って、小型で、操作性が良く、画像処理能力の大きい走
、f型反射邂子回折顕微装置全提供することにある。
Therefore, an object of the present invention is to provide a compact, easy-to-operate, and high-image-processing reflector and f-type reflector by making it possible to obtain a reflection diffraction image on a cathode ray tube rather than on a fluorescent plate. We provide a full range of Xuji diffraction microscope equipment.

〔発明の概要〕[Summary of the invention]

上記目的を達成するために、本発明においては、試料と
螢光板あるいは酸子検出器との間に偏向系及びアパーチ
ャを設け、偏向系Vこよりある角度幅内の反射′醒子線
を偏向し、そのときつ′パーチャ全通過する電子シーよ
る光は号あるいvi亀気侶信号禎陰極紛管の輝度変調信
号に変換することにより−(陰極線管」二に反射回折像
を得ること全月蝕してするように走査型反射電子回折顯
wX、装置(f−構成し烹こしを特徴としている。
In order to achieve the above object, in the present invention, a deflection system and an aperture are provided between the sample and the fluorescent plate or the acid detector, and the reflected radiation within a certain angular range is deflected from the deflection system V. At that time, the light emitted by the electron beam that passes through the entire lunar eclipse is converted into a luminance modulation signal of the cathode ray tube (cathode ray tube) to obtain a reflected diffraction image of the total lunar eclipse. The scanning-type backscattered electron diffraction system (wX) is configured as follows:

〔発明の実施例〕[Embodiments of the invention]

v下、本匪明を図面を用いて訂細に一説明する。 Below, this book will be explained in detail using drawings.

第1図は従来の走査型反射電子回折顕微装置の基本的り
構成を示したものである。同図において、加速電源1?
有する電子錠2から放出される一次篭子ビーム4は収束
Vンズ3により真空容器6内にある試料7の表面に収束
さノ′とる。走査電源14により一次′電子ビーム用偏
向コイル群5?動作させて一次電子ビーム4を試料7の
表面上で走査させる。そのと@に得ら九る試料7の陰極
線管(以下、CRTと略称する)13の輝度変調信号に
かえてCRT13上に試料7の吸収電流像?得る。
FIG. 1 shows the basic configuration of a conventional scanning-type backscattered electron diffraction microscope. In the same figure, acceleration power supply 1?
A primary cage beam 4 emitted from an electronic lock 2 is focused onto the surface of a sample 7 in a vacuum container 6 by a focusing V lens 3. The scanning power supply 14 causes the primary electron beam deflection coil group 5? It is operated to scan the primary electron beam 4 over the surface of the sample 7. Then, instead of the brightness modulation signal of the cathode ray tube (hereinafter abbreviated as CRT) 13 of the sample 7 obtained, an absorbed current image of the sample 7 is displayed on the CRT 13? obtain.

この吸収電流像から試料7上の分析すべき場所全選択す
る。この分析点に一次電子像4を固定照射することによ
って得られる反射回折線8tユ螢光似9上にのぞき窓1
0を通して反射回折像として観測される。この回折像を
解析することに、〔っで試料70表面上の任意の場所の
結晶状態(試料7の表面部分を溝底する元素の配列状態
)を分析することが可能となる。さらに、アパーチャ[
1を使用しである特定の回折スポット7選び、光電変換
素子(例えば、フォトマルチプライヤ)12から得られ
る電気信号音一次電子ビーム4の走査に同期させてC几
T13の輝度変調信号にかメーることによってCRT1
3上に回折顕微像が得られる。
All locations on the sample 7 to be analyzed are selected from this absorption current image. A peephole 1 is placed on the reflection diffraction line 8t and the fluorescent light 9 obtained by fixedly irradiating the primary electron image 4 on this analysis point.
0 and is observed as a reflection diffraction image. By analyzing this diffraction image, it becomes possible to analyze the crystalline state at any location on the surface of the sample 70 (the arrangement state of the elements forming the groove bottom of the surface portion of the sample 7). In addition, the aperture [
1 is used to select a specific diffraction spot 7, and in synchronization with the scanning of the primary electron beam 4, an electrical signal sound obtained from a photoelectric conversion element (for example, a photomultiplier) 12 is applied to the brightness modulation signal of the C-box T13. CRT1 by
A diffraction microscopic image is obtained on 3.

この回折顕微像から試料7の表面の結晶分布がわかり、
試料7の異面の結晶解析の有力な手段となる。このよう
に上記走査型反射電子回折顕微装置は表面の結晶状態を
ミクロに調べる上で有力な装置である。しかし、広範囲
の反射回折線ヲ螢光板9上で観察する心太があるため、
螢光、&9が太きく ’h リ結果として装置が大型化
する。める特定の回折スポフト(z選択する場合、光電
変換素子12堂アパーチャ11を機械的に動かす必要が
あり操作性が艮〈lい1反射回折像* 1lfj像処理
する場合二次元II!11像を記憶する等の特別な装置
を必要とうる1等の欠点がある。
This diffraction microscopic image reveals the crystal distribution on the surface of sample 7.
This is an effective means of crystal analysis of the different surface of sample 7. As described above, the above-mentioned scanning reflection electron diffraction microscope is an effective device for microscopically examining the crystalline state of the surface. However, since there is a wide range of reflected diffraction lines to be observed on the fluorescent plate 9,
Fluorescence and &9 become thicker, resulting in larger equipment. When selecting a specific diffraction spot (z), it is necessary to mechanically move the photoelectric conversion element 12 and the aperture 11, making the operability difficult. The first disadvantage is that it may require special equipment, such as for storing .

こtLVこ対して、次に述べる本発明Vこよる装置によ
りこハらの欠点を除去することができる。本発明による
走査型反射電子回折顕微装置の基本構成ケ第2図に示す
。本発明の最も特徴とする部分に螢光恨9、のぞき窓1
0、アパーチャ11、光電変換素子12、信号切替スイ
ッチ15、磁場迦蔽&16、反射回折線用偏向コイル群
17、反射回折線用CRTL8、反射回折線用走食電源
19よりなる信号検出部にある。
In contrast, these drawbacks can be eliminated by a device according to the present invention, which will be described below. The basic configuration of the scanning backscattered electron diffraction microscope apparatus according to the present invention is shown in FIG. The most characteristic parts of the present invention include a fluorescent lamp 9 and a peephole 1.
0, an aperture 11, a photoelectric conversion element 12, a signal changeover switch 15, a magnetic field shielding & .

一次寛子ビーム4を試料7の表面に固定したときに得ら
れる反射回折線8の一部は磁場遮蔽板16を通過し、さ
らに小さな部分がアノ(−チャ11を通過して螢光板9
上に輝点を形成する。さらに、のぞき窓10を通して光
電変換素子12によってこの輝点による光信号を受けて
電気信号に変換し、反射回折線用CRT18の輝度変調
信号として使用する。このとき、反射回折線用走査電源
19ンこより反射回折線用偏向コイル群17全動作させ
、磁場遮蔽板16を通過した反射回折線8を偏向し、こ
の偏向に同期した輝度変調像を反射回折線用CItT1
8上に表示する。磁場趙蔽板16は反射回折線用コイル
群全動作させたときに生ずる磁場を遮蔽し、−次電子ビ
ーム4σ)照射点?一定に保つ役割1f::はたす。
A part of the reflected diffraction line 8 obtained when the primary Hiroko beam 4 is fixed on the surface of the sample 7 passes through the magnetic field shielding plate 16, and an even smaller part passes through the anno(-cha) 11 and passes through the fluorescent plate 9.
A bright spot forms on the top. Further, an optical signal from this bright spot is received by a photoelectric conversion element 12 through a peephole 10, converted into an electric signal, and used as a brightness modulation signal for the CRT 18 for reflected diffraction lines. At this time, the deflection coil group 17 for the reflected diffraction line is fully operated from the scanning power supply 19 for the reflected diffraction line, the reflected diffraction line 8 that has passed through the magnetic field shielding plate 16 is deflected, and a brightness modulated image synchronized with this deflection is reflected and diffracted. CITT1 for wire
Display on 8. The magnetic field shielding plate 16 shields the magnetic field generated when all of the reflection diffraction line coils are operated, and prevents the -order electron beam 4σ) irradiation point. The role of keeping it constant is 1f.

このようにして得られた反射回折線用C狂′P18上の
輝度変調像は、第1図に示す従来装置で螢光板9上に得
られる反射回折像とまったく等価′fL像になる。また
、ある特定回折スポフトを信号とする回折顕微像は反射
回折線用CRT上に表示されている反射回折像中の回折
スボントの位置にCRTの陰極線を固定し、この状態で
信号切替スイッチ15tC)tT13の方に切替え、走
査電源14((より一定電子ビーム4を試料7の表面上
で走査することによってCRT13上に得ることができ
る。
The brightness modulation image on the reflected diffraction line C deviation P18 obtained in this manner becomes a completely equivalent 'fL image to the reflected diffraction image obtained on the fluorescent plate 9 with the conventional apparatus shown in FIG. In addition, to obtain a diffraction microscopic image using a specific diffraction spot as a signal, fix the cathode ray of the CRT at the position of the diffraction spot in the reflected diffraction image displayed on the CRT for reflected diffraction rays, and in this state, switch the signal changeover switch 15tC) tT13, the scanning power source 14 (a more constant electron beam 4 can be obtained on the CRT 13 by scanning it over the surface of the sample 7.

第2図に示す実施例により、反射回折像乞取得する場合
に大口径の螢光板を必要としない、すべての信号取得k
t!気的に行なえるので操作性が非常に良く、また走査
電源19の走査に同期して得ら〕する光′冠変撲素子1
2からの五気信号をメモリーに記1.はし種々の処理全
行なうことによって信号のS、/N’に増大させること
かでさる等の画像処理を容易に行1rうことができるl
 ’FT’の効果を得ることができる。
The embodiment shown in FIG. 2 allows all signal acquisition without the need for a large-diameter fluorescent plate when acquiring reflection diffraction images.
T! It is very easy to operate because it can be done automatically, and the optical crown deformation element 1 can be obtained in synchronization with the scanning of the scanning power supply 19.
Record the five energy signals from 2 in memory 1. By performing all the various processes, it is possible to easily perform image processing such as increasing the signal to S, /N'.
The effect of 'FT' can be obtained.

〔発明の効果〕〔Effect of the invention〕

以上に述べ女、如く、本発明による走査型反射電子回折
顯倣装置は反射回折線像を大口径の螢光板上でなく、陰
極線管上に得ることを可能にすることによって、小型で
、操作性が良く、画像処理が容易であるという極めて優
れた利点を持つ。
As described above, the scanning backscattered electron diffraction imprinter according to the present invention is compact and easy to operate by making it possible to obtain a reflection diffraction line image on a cathode ray tube rather than on a large diameter phosphor plate. It has the extremely excellent advantages of good performance and easy image processing.

【図面の簡単な説明】[Brief explanation of the drawing]

第1図は従来の走査型反射電子回折顕微装置の基本構成
図、第2図は本発明に」こる走査型反射Iit子回折顕
微装置の基本構成図で4りる。。 1・・・加速電源、2・・・′爾、子錠、3・・・収束
リンズ、4・・・−次電子ビーム、5・・・−次中二子
ビーム用偏向コイル群、6・・・真空容器、7・・試料
、8・・・反射回折線、9・・・螢光板、10・・・の
ぞき窓、11・・・アパーチャ、12・・・光電変換素
子、13・・・陰極線憤(C)(T)、14・・・疋食
屯源、15・・・信号切替スイッチ、16・・・磁場逼
藪似、17・・・反射回折線用偏向コイル群、18・・
・反射回折線像(“RT、19・・・及第 1 図 1 第 Z 図 /1
FIG. 1 is a basic configuration diagram of a conventional scanning type reflection electron diffraction microscope, and FIG. 2 is a basic configuration diagram of a scanning type reflection electron diffraction microscope according to the present invention. . DESCRIPTION OF SYMBOLS 1... Accelerating power supply, 2...'er, child lock, 3... Convergence ring, 4... -order electron beam, 5... -order middle electron beam deflection coil group, 6... - Vacuum container, 7... Sample, 8... Reflected diffraction ray, 9... Fluorescent plate, 10... Peephole, 11... Aperture, 12... Photoelectric conversion element, 13... Cathode ray Anger (C) (T), 14... 疋食屯源, 15... Signal changeover switch, 16... Magnetic field interference, 17... Deflection coil group for reflected diffraction lines, 18...
・Reflection diffraction line image ("RT, 19... and 1st Figure 1 Figure Z/1

Claims (1)

【特許請求の範囲】[Claims] 1、具債中で′成子源から一次′電子ビームーr取出し
、上記−次′酸子ビームを収束レンズ及び偏向系によっ
て試料表面上の所定領域に所定角度で照射し、それによ
って上記試料の表面で反射される反射回折線による回折
像を螢光板上に形成し、上記螢光板上の回折像の中の特
定回折スボントからの発光のみをアパーチャによって選
択的に取出し、光電変換素子により電気信号に変換して
走査電子顕微像?得る走査型反射電子回折顕微装置にお
いて、上記試料と上記螢光板との間に偏向系及びアパー
チャを設け、上記偏向系によりある角度幅内の上記反射
回折線を偏向し、上記アパーチャを通過する電子による
電気信号を陰極線管の輝度変調信号に変換することによ
って、上記陰極線管上に反射回折1#を得るようにして
なることを特徴とする走査型反射電子回折顕微装置。
1. A primary electron beam is taken out from a source, and the -order electron beam is irradiated onto a predetermined area on the sample surface at a predetermined angle using a converging lens and a deflection system, whereby the surface of the sample is A diffraction image is formed on a fluorescent plate by the reflected diffraction rays reflected by the fluorescent plate, and only the light emitted from a specific diffraction band in the diffraction image on the fluorescent plate is selectively extracted by an aperture, and converted into an electrical signal by a photoelectric conversion element. Convert to scanning electron microscopy image? In the scanning-type backscattered electron diffraction microscope apparatus, a deflection system and an aperture are provided between the sample and the phosphor plate, and the deflection system deflects the reflected diffraction rays within a certain angular width, and the electrons passing through the aperture are deflected by the deflection system. 1. A scanning-type reflection electron diffraction microscope apparatus, characterized in that a reflection diffraction 1# is obtained on the cathode ray tube by converting an electric signal obtained by the above into a brightness modulation signal of the cathode ray tube.
JP16321983A 1983-09-07 1983-09-07 Scanning type reflecting electron diffraction microscope apparatus Granted JPS6056344A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP16321983A JPS6056344A (en) 1983-09-07 1983-09-07 Scanning type reflecting electron diffraction microscope apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP16321983A JPS6056344A (en) 1983-09-07 1983-09-07 Scanning type reflecting electron diffraction microscope apparatus

Publications (2)

Publication Number Publication Date
JPS6056344A true JPS6056344A (en) 1985-04-01
JPH0586022B2 JPH0586022B2 (en) 1993-12-09

Family

ID=15769568

Family Applications (1)

Application Number Title Priority Date Filing Date
JP16321983A Granted JPS6056344A (en) 1983-09-07 1983-09-07 Scanning type reflecting electron diffraction microscope apparatus

Country Status (1)

Country Link
JP (1) JPS6056344A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0295538U (en) * 1989-01-11 1990-07-30
EP0499490A2 (en) * 1991-02-15 1992-08-19 Shimadzu Corporation Scanning reflection electron diffraction microscope

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363860A (en) * 1976-11-12 1978-06-07 Siemens Ag Method of displaying diffraction picture of transmissive scan particleeray microscope
JPS5510212U (en) * 1978-07-06 1980-01-23

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5363860A (en) * 1976-11-12 1978-06-07 Siemens Ag Method of displaying diffraction picture of transmissive scan particleeray microscope
JPS5510212U (en) * 1978-07-06 1980-01-23

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0295538U (en) * 1989-01-11 1990-07-30
JPH0515943Y2 (en) * 1989-01-11 1993-04-27
EP0499490A2 (en) * 1991-02-15 1992-08-19 Shimadzu Corporation Scanning reflection electron diffraction microscope

Also Published As

Publication number Publication date
JPH0586022B2 (en) 1993-12-09

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