JPH10275585A - Scanning electron microscope for vacuum stm - Google Patents

Scanning electron microscope for vacuum stm

Info

Publication number
JPH10275585A
JPH10275585A JP9078247A JP7824797A JPH10275585A JP H10275585 A JPH10275585 A JP H10275585A JP 9078247 A JP9078247 A JP 9078247A JP 7824797 A JP7824797 A JP 7824797A JP H10275585 A JPH10275585 A JP H10275585A
Authority
JP
Japan
Prior art keywords
electron
sample
electron beam
scanning
electron microscope
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
JP9078247A
Other languages
Japanese (ja)
Inventor
Hiroshi Uchiumi
博 内海
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Jeol Ltd
Original Assignee
Jeol Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Jeol Ltd filed Critical Jeol Ltd
Priority to JP9078247A priority Critical patent/JPH10275585A/en
Publication of JPH10275585A publication Critical patent/JPH10275585A/en
Withdrawn legal-status Critical Current

Links

Landscapes

  • Analysing Materials By The Use Of Radiation (AREA)

Abstract

PROBLEM TO BE SOLVED: To provide a scanning electron microscope for STM, which can observe SEM(scanning electron microscope) image and RHEED(reflected high speed electron beam diffraction) image with one electron gun. SOLUTION: A device, in which a scanning tunnel microscope and a scanning electron microscope are arranged in a vacuum container, is provided with a deflecting unit 30 for radiating electron beam at a low angle to a sample 2 and a detecting unit 21 for detecting the electron reflected from the sample 2. An electron beam from an electron gun 20 of the scanning electron microscope is made to enter the deflecting unit 30 so as to apply the beam to the sample 2, and the electron reflected from the sample 2 is detected by the detecting unit 21 so as to observe the reflected electron beam diffraction image.

Description

【発明の詳細な説明】DETAILED DESCRIPTION OF THE INVENTION

【0001】[0001]

【発明の属する技術分野】本発明は走査型トンネル顕微
鏡(STM)と走査型電子顕微鏡(SEM)が組み込ま
れ、STM像、SEM像を観察可能にした真空STM用
SEMに関するものである。
BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to an SEM for a vacuum STM in which a scanning tunneling microscope (STM) and a scanning electron microscope (SEM) are incorporated so that an STM image and an SEM image can be observed.

【0002】[0002]

【従来の技術】超高真空中で使用されるSTMでは、同
時にSEMにより試料および探針の状態を見たい、ある
いは反射型高速電子線回折(RHEED)で試料表面の
構造を見たいという要請があった。ところが、SEMで
は試料面に一次電子を照射し、そのとき放出される二次
電子を検出するのに対して、RHEEDでは試料に浅い
角度で電子線を照射し、そのとき反射される電子線と試
料面との相互作用による回折像を見ているため、SEM
とRHEEDでは互いに試料を見込む角が大きく異な
り、これらを同時に観測する場合は2個の電子銃を必要
としていた。
2. Description of the Related Art In an STM used in an ultra-high vacuum, there is a demand to simultaneously observe the state of a sample and a probe by SEM or to observe the structure of the sample surface by reflection type high-energy electron diffraction (RHEED). there were. However, while the SEM irradiates the sample surface with primary electrons and detects secondary electrons emitted at that time, the RHEED irradiates the sample with an electron beam at a small angle, and the electron beam reflected at that time Since the diffraction image due to the interaction with the sample surface is viewed, the SEM
And RHEED differ greatly from each other in the angle of view of the sample, and when observing them simultaneously, two electron guns were required.

【0003】[0003]

【発明が解決しようとする課題】このように従来の装置
では、STM像、SEM像、RHEED像をそれぞれ観
察しようとすると、SEM像、RHEED像を得るため
の電子銃をそれぞれ必要とし、極めて高価となり、スペ
ースも必要としていた。
As described above, the conventional apparatus requires an electron gun for obtaining the SEM image and the RHEED image when observing the STM image, the SEM image, and the RHEED image, and is extremely expensive. And needed space.

【0004】本発明は上記課題を解決するためのもの
で、1つの電子銃によりSEM像、RHEED像も観察
することができる真空STM用装置型電子顕微鏡を提供
することを目的とする。
An object of the present invention is to solve the above-mentioned problems, and an object of the present invention is to provide a device electron microscope for a vacuum STM which can observe a SEM image and a RHEED image with one electron gun.

【0005】[0005]

【課題を解決するための手段】本発明は、真空容器内に
走査トンネル顕微鏡および走査電子顕微鏡が配置された
装置において、試料に低い角度で電子ビームを照射させ
る偏向器と、試料からの反射電子を検出する検出器とを
備え、前記走査電子顕微鏡の電子銃からの電子ビームを
前記偏向器に入射させて試料に照射し、試料からの反射
電子を前記検出器で検出して反射電子線回折像を観察可
能にしたことを特徴とする。
SUMMARY OF THE INVENTION The present invention relates to a deflector for irradiating a sample with an electron beam at a low angle, and a reflected electron from the sample in an apparatus having a scanning tunnel microscope and a scanning electron microscope arranged in a vacuum vessel. And an electron beam from the electron gun of the scanning electron microscope is incident on the deflector to irradiate the sample, and reflected electrons from the sample are detected by the detector and reflected electron beam diffraction is performed. The image is made observable.

【0006】[0006]

【発明の実施の形態】以下、本発明の実施の形態につい
て説明する。図1は本発明の実施の形態を示す図であ
る。図1において、真空容器1は超高真空に保持され、
この中に試料2に対向してSTMスキャナ10、STM
探針11が配置され、また、STMスキャナ10の両側
にはSEM用の電子銃20とSEM用の検出器21がそ
れぞれ配置されている。電子銃20はレンズや偏向系を
含んでおり、真空容器1にベローズ22によって試料2
に対して接近あるいは後退できるように取り付けられて
いる。また、試料2に対して浅い角度で電子ビームを照
射させるための偏向器30と電子ビームを曲げることに
よる歪みを補正するための非点補正器31、また試料か
らの反射電子を検出するためのRHEED検出器32が
配置されている。
Embodiments of the present invention will be described below. FIG. 1 is a diagram showing an embodiment of the present invention. In FIG. 1, a vacuum vessel 1 is maintained in an ultra-high vacuum,
In this, the STM scanner 10 facing the sample 2 and the STM
A probe 11 is arranged, and an electron gun 20 for SEM and a detector 21 for SEM are arranged on both sides of the STM scanner 10, respectively. The electron gun 20 includes a lens and a deflection system.
It is attached so that it can approach or retreat from. Further, a deflector 30 for irradiating the sample 2 with an electron beam at a shallow angle, an astigmatism corrector 31 for correcting distortion caused by bending the electron beam, and a detector for detecting reflected electrons from the sample. An RHEED detector 32 is provided.

【0007】このような構成において、STMスキャナ
10によりSTM探針11を駆動して試料面のSTM像
が観察される。SEM像を観察する場合には電子銃20
を照射位置23まで移動させ、SEM用電子ビーム経路
25を通して電子ビームを試料2に照射し、その時試料
から放出される二次電子をSEM検出器21で検出す
る。
In such a configuration, the STM probe 11 is driven by the STM scanner 10 to observe the STM image on the sample surface. When observing the SEM image, the electron gun 20 is used.
Is moved to the irradiation position 23, and the sample 2 is irradiated with an electron beam through the SEM electron beam path 25. Secondary electrons emitted from the sample at that time are detected by the SEM detector 21.

【0008】次に電子銃20を試料から引き離し、図の
照射位置24まで後退させる。この時の移動可能距離L
はベローズ22によって確保される。この位置で電子銃
20に設けられている走査コイル(図示せず)で電子ビ
ームを偏向し、電子銃外部に設けた別の偏向器30に入
射させ、ここで偏向させて非点補正器31を介して試料
に極めて浅い角度で電子ビームを照射すると、対向面に
配置した蛍光スクリーン等からなるRHEED検出器3
2でRHEED像が得られる。
Next, the electron gun 20 is separated from the sample, and is retracted to the irradiation position 24 in the figure. The movable distance L at this time
Is secured by the bellows 22. At this position, the electron beam is deflected by a scanning coil (not shown) provided on the electron gun 20 and made incident on another deflector 30 provided outside the electron gun. When the sample is irradiated with an electron beam at an extremely shallow angle through the RHEED detector, a RHEED detector 3 composed of a fluorescent screen and the like arranged on the opposite surface
2, an RHEED image is obtained.

【0009】このように大きな電子銃を2個使わなくて
も1個だけでSEM像とRHEED像の両方の観察が可
能である。なお、試料を傾斜させれば同じことが容易に
できるが、STMが配置されている場合、振動をできる
限り減らす必要があるので、試料またはSTMステージ
に傾斜機構は付けにくい。従って、試料あるいはSTM
はそのままとし電子銃20を移動可能としてその走査コ
イルを用いて電子ビームを偏向することによりSEM像
とRHEED像の観察する方が有利である。
As described above, it is possible to observe both the SEM image and the RHEED image with only one electron gun without using two large electron guns. Note that the same can be easily performed by inclining the sample, but when the STM is arranged, it is necessary to reduce the vibration as much as possible, so that it is difficult to attach an inclining mechanism to the sample or the STM stage. Therefore, the sample or STM
It is more advantageous to observe the SEM image and the RHEED image by deflecting the electron beam using the scanning coil while keeping the electron gun 20 movable while keeping the electron gun 20 as it is.

【0010】図2は本発明の他の実施の形態の例を示す
図である。この例も基本的構造は図1の場合と同じであ
るが、電子銃20がベローズ22により試料に対して接
近、後退可能であると共に、傾斜可能に構成されている
点が異なっている。このように電子銃の移動、傾斜機構
を設けることにより、電子銃の持つ走査コイルの偏向に
因らず、電子銃自体の角度を変えることにより、SEM
の偏向系は使わずに、偏向器30に電子ビームを入射さ
せることができるので、同様にRHEED像の観察を行
うことが可能である。
FIG. 2 is a diagram showing an example of another embodiment of the present invention. This example also has the same basic structure as that of FIG. 1, except that the electron gun 20 is configured to be able to approach and retreat to the sample by the bellows 22 and to be tiltable. By providing the mechanism for moving and tilting the electron gun in this manner, the SEM can be changed by changing the angle of the electron gun itself irrespective of the deflection of the scanning coil of the electron gun.
Since the electron beam can be incident on the deflector 30 without using the deflection system described above, it is possible to observe the RHEED image in the same manner.

【0011】[0011]

【発明の効果】以上のように本発明によれば、SEMの
電子銃に移動または移動傾斜機構を設け、SEM像観察
時には試料に接近させ、RHEED像観察時には引き離
し、SEM走査コイルまたは電子銃の傾斜により別に配
置した偏向器に電子ビームを入射させて試料に浅い角度
で電子ビームを照射し、その反射電子を蛍光スクリーン
等で検出することができ、1つのSEMの電子銃により
RHEED像を観察することも可能になる。
As described above, according to the present invention, the electron gun of the SEM is provided with a moving or moving and tilting mechanism so that the electron gun approaches the sample when observing the SEM image and separates it when observing the RHEED image. The sample is irradiated with the electron beam at a shallow angle by irradiating the electron beam to a deflector separately arranged due to the inclination, and the reflected electrons can be detected with a fluorescent screen or the like. The RHEED image can be observed with one SEM electron gun It is also possible to do.

【図面の簡単な説明】[Brief description of the drawings]

【図1】 本発明の実施の形態を示す図である。FIG. 1 is a diagram showing an embodiment of the present invention.

【図2】 本発明の他の実施の形態の例を示す図であ
る。
FIG. 2 is a diagram showing an example of another embodiment of the present invention.

【符号の説明】[Explanation of symbols]

1…真空容器、2…試料、10…STMスキャナ、11
…STM探針、20…電子銃、21…検出器、22…ベ
ローズ、23…SEM照射位置、24…RHEED照射
位置、25…SEM用電子ビーム経路、30…偏向器、
31…非点補正器、32…RHEED検出器、33…R
HEED電子ビーム経路。
DESCRIPTION OF SYMBOLS 1 ... Vacuum container, 2 ... Sample, 10 ... STM scanner, 11
... STM probe, 20 ... electron gun, 21 ... detector, 22 ... bellows, 23 ... SEM irradiation position, 24 ... RHEED irradiation position, 25 ... SEM electron beam path, 30 ... deflector,
31: astigmatism corrector, 32: RHEED detector, 33: R
HEED electron beam path.

───────────────────────────────────────────────────── フロントページの続き (51)Int.Cl.6 識別記号 FI H01J 37/28 H01J 37/28 B ──────────────────────────────────────────────────続 き Continued on the front page (51) Int.Cl. 6 Identification code FI H01J 37/28 H01J 37/28 B

Claims (3)

【特許請求の範囲】[Claims] 【請求項1】 真空容器内に走査トンネル顕微鏡および
走査電子顕微鏡が配置された装置において、試料に低い
角度で電子ビームを照射させる偏向器と、試料からの反
射電子を検出する検出器とを備え、前記走査電子顕微鏡
の電子銃からの電子ビームを前記偏向器に入射させて試
料に照射し、試料からの反射電子を前記検出器で検出し
て反射電子線回折像を観察可能にしたことを特徴とする
真空STM用走査型電子顕微鏡。
1. An apparatus in which a scanning tunnel microscope and a scanning electron microscope are arranged in a vacuum vessel, comprising a deflector for irradiating a sample with an electron beam at a low angle, and a detector for detecting reflected electrons from the sample. That the electron beam from the electron gun of the scanning electron microscope is incident on the deflector to irradiate the sample, the reflected electrons from the sample are detected by the detector, and the reflected electron beam diffraction image can be observed. Characteristic scanning electron microscope for vacuum STM.
【請求項2】 請求項1記載の電子顕微鏡において、走
査型電子顕微鏡の電子銃を試料に対して接近、後退させ
る移動機構を備え、反射電子線回折像を観察時には前記
電子銃を後退させ、電子銃内で偏向させた電子ビームを
前記偏向器に入射させるようにしたことを特徴とする真
空STM用走査型電子顕微鏡。
2. The electron microscope according to claim 1, further comprising a moving mechanism for moving the electron gun of the scanning electron microscope toward and away from the sample, and moving the electron gun backward when observing a reflected electron beam diffraction image. A scanning electron microscope for vacuum STM, wherein an electron beam deflected in an electron gun is incident on the deflector.
【請求項3】 請求項1記載の電子顕微鏡において、前
記電子銃を試料に対して接近、後退させると共に、傾斜
させる機構を備え、反射電子線回折像を観察時には前記
電子銃を後退かつ傾斜させ、電子銃からの電子ビームを
前記偏向器に入射させるようにしたことを特徴とする真
空STM用走査型電子顕微鏡。
3. The electron microscope according to claim 1, further comprising a mechanism for moving the electron gun toward and away from the sample, and tilting the electron gun when observing a reflected electron beam diffraction image. A scanning electron microscope for vacuum STM, wherein an electron beam from an electron gun is incident on the deflector.
JP9078247A 1997-03-28 1997-03-28 Scanning electron microscope for vacuum stm Withdrawn JPH10275585A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP9078247A JPH10275585A (en) 1997-03-28 1997-03-28 Scanning electron microscope for vacuum stm

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP9078247A JPH10275585A (en) 1997-03-28 1997-03-28 Scanning electron microscope for vacuum stm

Publications (1)

Publication Number Publication Date
JPH10275585A true JPH10275585A (en) 1998-10-13

Family

ID=13656686

Family Applications (1)

Application Number Title Priority Date Filing Date
JP9078247A Withdrawn JPH10275585A (en) 1997-03-28 1997-03-28 Scanning electron microscope for vacuum stm

Country Status (1)

Country Link
JP (1) JPH10275585A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210171A (en) * 2005-01-28 2006-08-10 Jeol Ltd Scanning width calibration method of charged particle beam, microscopic device using charged particle beam, and sample for charged particle beam calibration
JP2008047523A (en) * 2006-07-24 2008-02-28 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh Charged particle beam device and method for inspecting specimen

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006210171A (en) * 2005-01-28 2006-08-10 Jeol Ltd Scanning width calibration method of charged particle beam, microscopic device using charged particle beam, and sample for charged particle beam calibration
JP4594116B2 (en) * 2005-01-28 2010-12-08 日本電子株式会社 Charged beam scanning width calibration method, microscope using charged particle beam, and charged particle beam calibration sample
JP2008047523A (en) * 2006-07-24 2008-02-28 Ict Integrated Circuit Testing Ges Fuer Halbleiterprueftechnik Mbh Charged particle beam device and method for inspecting specimen
US8008629B2 (en) 2006-07-24 2011-08-30 ICT Integrated Circuit Testing Gesellschaft für Halbleiterprüftechnik mbH Charged particle beam device and method for inspecting specimen

Similar Documents

Publication Publication Date Title
US4983832A (en) Scanning electron microscope
JPH09171791A (en) Scanning type electron microscope
US6979821B2 (en) Scanning electron microscope
US4460827A (en) Scanning electron microscope or similar equipment with tiltable microscope column
JP2001110351A5 (en)
JP2006093161A (en) Electron scanning microscope
JP2000500265A (en) Ion thinning method and apparatus in high resolution transmission electron microscope
JP3101130B2 (en) Complex charged particle beam device
US5668372A (en) Scanning electron microscope and its analogous device
JPH10275585A (en) Scanning electron microscope for vacuum stm
JPH0729539A (en) Focused ion beam device
JP4179390B2 (en) Scanning electron microscope
JP3494152B2 (en) Scanning electron microscope
JP4179369B2 (en) Scanning electron microscope
JPH0843600A (en) X-ray observing device
JP2000123774A (en) Scanning tunneling electron microscope
JPH11135052A (en) Scanning electron microscope
JP3992021B2 (en) Scanning electron microscope
USRE29500E (en) Scanning charged beam particle beam microscope
JP2001006605A (en) Focusing ion beam processing device and processing method for specimen using focusing ion beam
JP2000057987A (en) Detection device for shape observation and shape observation method
WO2000016372A1 (en) High energy electron diffraction apparatus
JP2559434B2 (en) Electron beam exposure apparatus and exposure method
JPH09190793A (en) Scanning electron microscope
JPH0431728Y2 (en)

Legal Events

Date Code Title Description
A300 Application deemed to be withdrawn because no request for examination was validly filed

Free format text: JAPANESE INTERMEDIATE CODE: A300

Effective date: 20040601