JPS58204454A - Reflected electron diffraction microscopic device of scanning type - Google Patents
Reflected electron diffraction microscopic device of scanning typeInfo
- Publication number
- JPS58204454A JPS58204454A JP8478382A JP8478382A JPS58204454A JP S58204454 A JPS58204454 A JP S58204454A JP 8478382 A JP8478382 A JP 8478382A JP 8478382 A JP8478382 A JP 8478382A JP S58204454 A JPS58204454 A JP S58204454A
- Authority
- JP
- Japan
- Prior art keywords
- sample
- phosphor plate
- mirror
- reflected
- electron diffraction
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000002003 electron diffraction Methods 0.000 title claims description 12
- 238000001000 micrograph Methods 0.000 claims abstract description 8
- 238000010894 electron beam technology Methods 0.000 claims 1
- 239000000284 extract Substances 0.000 claims 1
- 230000003287 optical effect Effects 0.000 abstract description 9
- 238000004458 analytical method Methods 0.000 abstract description 7
- 238000006243 chemical reaction Methods 0.000 abstract description 4
- 239000013078 crystal Substances 0.000 abstract description 3
- 238000001514 detection method Methods 0.000 abstract description 3
- 238000010438 heat treatment Methods 0.000 abstract description 2
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 5
- NLYAJNPCOHFWQQ-UHFFFAOYSA-N kaolin Chemical compound O.O.O=[Al]O[Si](=O)O[Si](=O)O[Al]=O NLYAJNPCOHFWQQ-UHFFFAOYSA-N 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 description 6
- 238000010586 diagram Methods 0.000 description 2
- 238000000386 microscopy Methods 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/26—Electron or ion microscopes; Electron or ion diffraction tubes
- H01J37/28—Electron or ion microscopes; Electron or ion diffraction tubes with scanning beams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/02—Details
- H01J37/22—Optical, image processing or photographic arrangements associated with the tube
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
Abstract
Description
【発明の詳細な説明】
本発明は試料表面の結晶性を分析する走査型反射電子回
折顕微装置に関する。DETAILED DESCRIPTION OF THE INVENTION The present invention relates to a scanning electron reflection diffraction microscope apparatus for analyzing the crystallinity of a sample surface.
従来の走査型反射電子回折顕微装置では、試料表面の形
態を観察して分析場所を選択するには、試料中に吸収さ
れる電流信号、あるいは試料表面から放出される二次′
電子の信号による走査電子顕微鏡像を使用していた。し
かし、■試料吸収電流信号を取得するのは、試料の加熱
やイオン照射している場合等では難しい。また■入射電
子は試料表面すれすれに入射するので、試料から放出さ
れる遊子数は、入射方向に圧倒的に多く、従来の二次電
子検出方法では有効に二次電子を検出できない、という
欠点があった。Conventional scanning backscattered electron diffraction microscopy uses current signals absorbed in the sample or secondary
They used scanning electron microscopy images based on electron signals. However, it is difficult to obtain the sample absorption current signal when the sample is being heated or irradiated with ions. In addition, since the incident electrons are incident very close to the sample surface, the number of playions emitted from the sample is overwhelmingly large in the direction of incidence, and conventional secondary electron detection methods have the disadvantage of not being able to effectively detect secondary electrons. there were.
本発明の目的は、試料を加熱、イオン照射等をしている
状態でも、効率的に反射電子信号を取得して、容易に試
料表面の形態観察できる走査型反射電子回折顕微装置を
提供することにある。An object of the present invention is to provide a scanning type backscattered electron diffraction microscope that can efficiently acquire backscattered electron signals and easily observe the morphology of the sample surface even when the sample is being heated, ion irradiated, etc. It is in.
上記目的を達成するために１本発明による走査型反射電
子回折顕微装置は、反射電子による螢光板上のすべての
発光をハーフミラ−及びレンズによって集光し、この光
信号を光電変換素子によシミ気信号に換え走査電子顕微
鏡像を得ることを特徴とする。In order to achieve the above objects, 1 the scanning type backscattered electron diffraction microscope device according to the present invention focuses all the light emitted by backscattered electrons on a fluorescent plate using a half mirror and a lens, and transmits this optical signal to a photoelectric conversion element. It is characterized by obtaining a scanning electron microscope image instead of an air signal.
以下、本発明を図面を用いて詳細に説明する。Hereinafter, the present invention will be explained in detail using the drawings.
第１図は本発明による走査型反射電子回折顕微装置の一
実施例の構成を示す図である。同図において２０ｋＶ程
度の力ｌＡ源１を有する電子銃２から放出された一次市
子ビーム３は収束レンズ４により真空容２；６内にある
試料７の表面に収束される。走査″を隙１７により偏向
コイル群５を動作させて一次醒子？ｓ３を試料７の表面
上で走査する。FIG. 1 is a diagram showing the configuration of an embodiment of a scanning type backscattered electron diffraction microscope according to the present invention. In the figure, a primary Ichiko beam 3 emitted from an electron gun 2 having a power source 1 of approximately 20 kV is focused by a converging lens 4 onto the surface of a sample 7 located within a vacuum volume 2;6. During scanning, the deflection coil group 5 is operated through the gap 17, and the primary beam s3 is scanned over the surface of the sample 7.
そのとき得られる試料７の吸収電流信号を陰極線管（以
丁、ＣＲ，Ｔと略称する）１６の輝度変調信号にかえて
ＣＲＴ１４上に試料７の吸収電流像を得る。この吸収電
流（象から試料７上の分析すべき場所を選択する。この
分析点に一次一子ビーム３を固定して１（＠射すること
によって得られる反射電子回折線８は螢光板９上にのぞ
き窓１０を通して反射電子回折像として観測される。こ
の回折像を解析することによって試料７の表面上の任意
の場所の結晶状態（つまり、試Ｎ７の表面部分を構成□
する元素の配列状態）を分析することが可能とな□
る。The absorbed current signal of the sample 7 obtained at this time is converted into a brightness modulation signal of a cathode ray tube (abbreviated as CR, T) 16 to obtain an absorbed current image of the sample 7 on the CRT 14. The location to be analyzed on the sample 7 is selected based on this absorbed current. is observed as a backscattered electron diffraction image through the peephole 10. By analyzing this diffraction image, the crystal state at any location on the surface of sample 7 (that is, the arrangement state of the elements constituting the surface portion of sample N7) ) can be analyzed.
本発明においては、かかる走査型反射電子回折顕微装置
における反射電子による螢光板９上の発光すべてを集光
するだめの集光手段を具える。集光手段としては例えば
ハーフミラ−１２及び光学レンズ１３を用いる。In the present invention, a condensing means is provided to condense all the light emitted from the backscattered electrons on the fluorescent plate 9 in such a scanning-type reflected electron diffraction microscope. For example, a half mirror 12 and an optical lens 13 are used as the condensing means.
而して従来まで、試料７の表面上の分析点を選ぶ場合試
料７に吸収される電流信号を使用した走査電子顕微鏡像
を使用していた。しかし、これでは、試料７に電流を流
し加熱した状態あるいはイオン照射した状態で分析点を
選択することは、信号電流と加熱電流あるいはイオン電
流と分離することが難しいため、困難である。本発明は
この欠点を除去すべく、反射電子による螢光板９上の全
発光１１をハーフミラ−１２により光学レンズ１３に導
＜。ハーフミラ−１２は半透明であるため螢光板９上の
反射回折像は容易に観察でき結晶性の分析のさまたげに
はならない。光学レンズ１３とハーフミラ−１２の距離
を適当に選べば螢光板９上の発光領域は充分縮少され光
電変換素子１５の検出口径内に入シ、螢光板９上の全発
光１１を電気信号に変換することができる。この電気信
号をＣＲ，Ｔ１６の輝度変調信号にかえてＣＲＴ１６上
に試料７の走査電子顕微鏡像を得て、試料７上の分析点
を選択する。これにより、信号が光信上に変換され、試
料７と信号系が絶縁されてるので、試料に電流を流し加
熱したり、イオン照射した場合でも容易に試料７上の分
析点を選択できる効果を奏する。また、光学レンズ１３
とノ・−フミラー１２の距離を適当に選べば、光学レン
ズ１３と光電変換素子１５の間に螢光板９上の発光領域
と同程度の大きさの実像を作ることができる。この実像
面上でアパーチャ１４を使用することによりある特定の
反射回折線による光信号のみを選択し、これを信号とし
た走査電子顕微鏡像、すなわち回折顕微像を得ることも
できる。この回折顕微像から試料７の表面の結晶分布が
分かる。Conventionally, when selecting an analysis point on the surface of the sample 7, a scanning electron microscope image using a current signal absorbed by the sample 7 has been used. However, in this case, it is difficult to select an analysis point in a state where the sample 7 is heated by passing an electric current or irradiated with ions because it is difficult to separate the signal current from the heating current or the ion current. In order to eliminate this drawback, the present invention guides all the light emitted from the backscattered electrons 11 on the fluorescent plate 9 to the optical lens 13 by means of a half mirror 12. Since the half mirror 12 is semitransparent, the reflection diffraction image on the fluorescent plate 9 can be easily observed and does not interfere with the analysis of crystallinity. If the distance between the optical lens 13 and the half mirror 12 is appropriately selected, the light emitting area on the fluorescent plate 9 can be sufficiently reduced to enter the detection aperture of the photoelectric conversion element 15, and the entire light emitted 11 on the fluorescent plate 9 can be converted into an electrical signal. can be converted. This electric signal is converted into a brightness modulation signal of CR, T16 to obtain a scanning electron microscope image of the sample 7 on the CRT 16, and an analysis point on the sample 7 is selected. As a result, the signal is converted onto the optical fiber, and the sample 7 and the signal system are insulated, so the analysis point on the sample 7 can be easily selected even when the sample is heated by passing a current or irradiated with ions. . In addition, the optical lens 13
By appropriately selecting the distance between the mirror 12 and the nozzle mirror 12, a real image having the same size as the light emitting area on the fluorescent plate 9 can be created between the optical lens 13 and the photoelectric conversion element 15. By using the aperture 14 on this real image plane, it is also possible to select only the optical signal due to a specific reflection diffraction line and obtain a scanning electron microscope image, that is, a diffraction microscope image using this as a signal. The crystal distribution on the surface of sample 7 can be seen from this diffraction microscopic image.
以上に述べた如く、本発明による走査型反射電子回折顕
微装置は、試料７を種々の物理状態、例えば加熱状態、
イオン照射状態等、においても容易にかつ効率的に試料
７表面の走査電子顕微鏡像が得られ分析点を容易に選ぶ
ことができるという極めてすぐれた利点を持つ。As described above, the scanning backscattered electron diffraction microscopy apparatus according to the present invention allows the sample 7 to be placed in various physical states, such as heated states,
This method has extremely excellent advantages in that a scanning electron microscope image of the surface of the sample 7 can be easily and efficiently obtained even under ion irradiation conditions, and analysis points can be easily selected.
第１図は本発明の一実施例の構成を示す図である。 FIG. 1 is a diagram showing the configuration of an embodiment of the present invention.
Claims (1)
の所定領域に所定角度で照射し、上記試料表面から反射
される電子の反射電子回折像を螢光板上に形成し、上記
螢光板上の反射電子回折像の特定位置からの発光のみを
選択的に取り出して電気信号に変換する走査型反射電子
回折顕微装置において、上記螢光板上のすべての発光を
集光する集光手段を具えこの集光を電気信号に変換し、
この信号を使用して走査電子顕微鏡像を取得することを
特徴とする走査型反射電子回折顕微装置、A primary electron beam is extracted from an electron source in a vacuum and irradiated onto a predetermined area on the sample surface at a predetermined angle, and a backscattered electron diffraction image of the electrons reflected from the sample surface is formed on a fluorescent plate. In a scanning type backscattered electron diffraction microscope device that selectively extracts only light emitted from a specific position of a backscattered electron diffraction image on a light plate and converts it into an electrical signal, a condensing means for focusing all the light emitted on the fluorescent plate is provided. Converts the focused light into electrical signals,
A scanning electron diffraction microscope device that uses this signal to obtain a scanning electron microscope image;
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8478382A JPS58204454A (en) | 1982-05-21 | 1982-05-21 | Reflected electron diffraction microscopic device of scanning type |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8478382A JPS58204454A (en) | 1982-05-21 | 1982-05-21 | Reflected electron diffraction microscopic device of scanning type |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPS58204454A true JPS58204454A (en) | 1983-11-29 |
Family
ID=13840290
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8478382A Pending JPS58204454A (en) | 1982-05-21 | 1982-05-21 | Reflected electron diffraction microscopic device of scanning type |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPS58204454A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0499490A2 (en) * | 1991-02-15 | 1992-08-19 | Shimadzu Corporation | Scanning reflection electron diffraction microscope |
| US5639731A (en) * | 1987-05-22 | 1997-06-17 | Pripps Bryggerier Ab | Amino acids for the preparation of a beverage |
-
1982
- 1982-05-21 JP JP8478382A patent/JPS58204454A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5639731A (en) * | 1987-05-22 | 1997-06-17 | Pripps Bryggerier Ab | Amino acids for the preparation of a beverage |
| EP0499490A2 (en) * | 1991-02-15 | 1992-08-19 | Shimadzu Corporation | Scanning reflection electron diffraction microscope |
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